Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SI4370DY Search Results

    SI4370DY Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4370DY Vishay Siliconix MOSFETs Original PDF
    Si4370DY SPICE Device Model Vishay Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode Original PDF

    SI4370DY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si4370DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 rDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 7.5 0.030 at VGS = 4.5 V 6.5 0.022 at VGS = 10 V 7.5 0.028 at VGS = 4.5 V 6.5 •


    Original
    PDF Si4370DY Si4830DY Si4370DY-T1-E3 08-Apr-05

    Si4370DY

    Abstract: Si4830DY
    Text: Si4370DY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.5 0.030 @ VGS = 4.5 V 6.5 0.022 @ VGS = 10 V 7.5 0.028 @ VGS = 4.5 V 6.5 FEATURES


    Original
    PDF Si4370DY Si4830DY S-21783--Rev. 07-Oct-02

    Si4370DY

    Abstract: Si4830DY
    Text: Si4370DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.5 0.030 @ VGS = 4.5 V 6.5 0.022 @ VGS = 10 V 7.5 0.028 @ VGS = 4.5 V 6.5


    Original
    PDF Si4370DY Si4830DY S-32621--Rev. 29-Dec-03

    394559

    Abstract: AN609 Si4370DY
    Text: Si4370DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    PDF Si4370DY AN609 27-Apr-07 394559

    Si4370DY

    Abstract: Si4830DY
    Text: Si4370DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 rDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 7.5 0.030 at VGS = 4.5 V 6.5 0.022 at VGS = 10 V 7.5 0.028 at VGS = 4.5 V 6.5 •


    Original
    PDF Si4370DY Si4830DY 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si4370DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.5 0.030 @ VGS = 4.5 V 6.5 0.022 @ VGS = 10 V 7.5 0.028 @ VGS = 4.5 V 6.5


    Original
    PDF Si4370DY Si4830DY Si4370DY--E3 Si4370DY-T1--E3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si4370DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.5 0.030 @ VGS = 4.5 V 6.5 0.022 @ VGS = 10 V 7.5 0.028 @ VGS = 4.5 V 6.5


    Original
    PDF Si4370DY Si4830DY Si4370DY-T1 S-31726--Rev. 18-Aug-03

    Si4370DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4370DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si4370DY 0-to-10V 02-Nov-02

    Untitled

    Abstract: No abstract text available
    Text: Si4370DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.5 0.030 @ VGS = 4.5 V 6.5 0.022 @ VGS = 10 V 7.5 0.028 @ VGS = 4.5 V 6.5


    Original
    PDF Si4370DY Si4830DY Si4370DY-T1 S-31726--Rev. 18-Aug-03

    q406 transistor

    Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
    Text: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


    Original
    PDF SiP41109 SiP41110 SiP41111 75/2A q406 transistor SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS

    sud*50n025-06p

    Abstract: SUD70N03-04P SI9120 sum45n25 SI9119 Si7810DN sud*50n025-09p SI2301ADS SI4732CY si9110
    Text: SELECTOR GUIDE V I S H A Y I N T E R T E C H N O L O G Y, I N C . Power MOSFETs for DC/DC Applications Siliconix LITTLE FOOT LITTLE FOOT® Plus Tr e n c h F E T ® WFET ChipFET® P ow e r PA K ® Application-Specific MOSFETs w w w. v i s h a y. c o m


    Original
    PDF VSA-SG0019-0310 sud*50n025-06p SUD70N03-04P SI9120 sum45n25 SI9119 Si7810DN sud*50n025-09p SI2301ADS SI4732CY si9110