Marking 7133-1
Abstract: Si3424BDV-T1-E3 7133-1
Text: New Product Si3424BDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.028 at VGS = 10 V 8a 0.038 at VGS = 4.5 V 7 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ) 6.2 RoHS APPLICATIONS COMPLIANT
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Si3424BDV
Si3424BDV-T1-E3
08-Apr-05
Marking 7133-1
7133-1
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Si3424BDV-T1-E3
Abstract: No abstract text available
Text: New Product Si3424BDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.028 at VGS = 10 V 8a 0.038 at VGS = 4.5 V 7 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ) 6.2 RoHS APPLICATIONS COMPLIANT
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Si3424BDV
Si3424BDV-T1-E3
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Specification Comparison Vishay Siliconix Si3424CDV vs. Si3424BDV Description: Package: Pin Out: N-Channel, 30 V D-S MOSFET TSOP-6 Identical Part Number Replacements: Si3424CDV-T1-GE3 Replaces Si3424BDV-T1-E3 Si3424CDV-T1-GE3 Replaces Si3424BDV-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
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Si3424CDV
Si3424BDV
Si3424CDV-T1-GE3
Si3424BDV-T1-E3
Si3424BDV-T1-GE3
30-May-11
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Untitled
Abstract: No abstract text available
Text: Si3424BDV Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.028 at VGS = 10 V 8a 0.038 at VGS = 4.5 V 7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
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Si3424BDV
2002/95/EC
Si3424BDV-T1-E3
Si3424BDV-T1-GE3
18-Jul-08
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Si3424DV
Abstract: Si3424BDV Si3424BDV-T1-E3 Si3424DV-T1 Si3424DV-T1-E3
Text: Specification Comparison Vishay Siliconix Si3424BDV vs. Si3424DV Description: Package: Pin Out: N-Channel 30-V D-S MOSFET TSOP-6 Identical Part Number Replacements Si3424BDV-T1-E3 Replaces Si3424DV-T1-E3 Si3424BDV-T1-E3 Replaces Si3424DV-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
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Si3424BDV
Si3424DV
Si3424BDV-T1-E3
Si3424DV-T1-E3
Si3424DV-T1
06-Sep-07
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Si3424BDV-T1-E3
Abstract: Si3424BDV-T1-GE3
Text: Si3424BDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.028 at VGS = 10 V 8a 0.038 at VGS = 4.5 V 7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
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Si3424BDV
2002/95/EC
Si3424BDV-T1-E3
Si3424BDV-T1-GE3
18-Jul-08
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PDF
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Si3424BDV-T1-E3
Abstract: Si3424BDV-T1-GE3
Text: Si3424BDV Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.028 at VGS = 10 V 8a 0.038 at VGS = 4.5 V 7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
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Si3424BDV
2002/95/EC
Si3424BDV-T1-E3
Si3424BDV-T1-GE3
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: Si3424BDV Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.028 at VGS = 10 V 8 0.038 at VGS = 4.5 V 7 • TrenchFET Power MOSFET • 100 % Rg Tested • Material categorization: For definitions of compliance please see
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Si3424BDV
Si3424BDV-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si3424BDV Vishay Siliconix N-Channel 30V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si3424BDV
S-71494Rev.
23-Jul-07
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Si3424BDV-T1-E3
Abstract: No abstract text available
Text: New Product Si3424BDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.028 at VGS = 10 V 8a 0.038 at VGS = 4.5 V 7 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ) 6.2 RoHS APPLICATIONS COMPLIANT
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Si3424BDV
Si3424BDV-T1-E3
18-Jul-08
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PDF
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Untitled
Abstract: No abstract text available
Text: Si3424BDV Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.028 at VGS = 10 V 8a 0.038 at VGS = 4.5 V 7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
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Si3424BDV
2002/95/EC
Si3424BDV-T1-E3
Si3424BDV-T1-GE3
11-Mar-11
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spice datasheet 7806
Abstract: AN609 68301
Text: Si3424BDV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si3424BDV
AN609
19-Dec-07
spice datasheet 7806
68301
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S101
Abstract: SI3424B tsop-6 marking ag 74623
Text: Si3424BDV Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.028 at VGS = 10 V 8a 0.038 at VGS = 4.5 V 7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
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Si3424BDV
2002/95/EC
Si3424BDV-T1-E3
Si3424BDV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
S101
SI3424B
tsop-6 marking ag
74623
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S-71494
Abstract: No abstract text available
Text: SPICE Device Model Si3424BDV Vishay Siliconix N-Channel 30V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si3424BDV
18-Jul-08
S-71494
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ALC889DSD
Abstract: WPCE775L SL28648BLC transistor c4544 NS682403P wpce775 c2097 transistor transistor C4770 UPEK transistor C4046
Text: 5 4 3 2 1 Schematics Page Index Title / Revision / Change Date D C B Page 01 02 03 04 05 06 07 08 09 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 Rev. Title of Schematics Page Index page BLOCK DIAGRAM CLOCK GEN (SL28648BLC)
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SL28648BLC)
R5250
PR181
ALC889DSD
WPCE775L
SL28648BLC
transistor c4544
NS682403P
wpce775
c2097 transistor
transistor C4770
UPEK
transistor C4046
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BSS138 NXP
Abstract: FDC642P 2n7002 nxp AO3401 BSS123 NXP BSH103 IRLL014N PMV65XP BSH108 BSP250
Text: NXP small-signal N- and P-channel MOSFETs Small-signal MOSFETs optimized for a broad range of applications Our advanced MOSFET solutions deliver the flexibility and performance that today’s market demands. Choose from a wide range of general-purpose MOSFET solutions, available in a variety
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OT223
OT883
PHT8N06LT
BSP030
PMN50XP
PMN55LN
PMN34LN
BSH103
BSS138 NXP
FDC642P
2n7002 nxp
AO3401
BSS123 NXP
BSH103
IRLL014N
PMV65XP
BSH108
BSP250
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Data ADP1829 Reference Design FCDC 00062 FEATURES Five Output Voltages: 1.0V, 1.8V, 3.3V x 2, 5V Output Current: 0.7A to 2.8A Input voltage: 9-12V Ripple 2% ppk of Output Voltage Transient step ±5%, 50% max load ADP1829 REFERENCE DESIGN DESCRIPTION
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ADP1829
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Diode SOT-23 marking 15d
Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs
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Diod92
VMN-SG2127-0911
Diode SOT-23 marking 15d
SI4210
si4812b
SI-4102
SI7149DP
SiM400
si4932
si7135
SiB914
SI4477
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gs 069
Abstract: PowerPACK 1212-8 Si4946BEY Si2314EDS SI4430BDY tsop6 marking 345 TN2404K 1206-8 chipfet layout Si4630DY SUM110N04-04
Text: N-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no
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SC-75
SC-75A
SC-89
gs 069
PowerPACK 1212-8
Si4946BEY
Si2314EDS
SI4430BDY
tsop6 marking 345
TN2404K
1206-8 chipfet layout
Si4630DY
SUM110N04-04
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