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    SI3127DV Search Results

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    SI3127DV Price and Stock

    Vishay Intertechnologies SI3127DV-T1-GE3

    P-CHANNEL 60-V (D-S) MOSFET - Product that comes on tape, but is not reeled (Alt: 75AH9200)
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    Avnet Americas SI3127DV-T1-GE3 Ammo Pack 16 Weeks, 4 Days 1
    • 1 $0.53
    • 10 $0.356
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    SI3127DV-T1-GE3 Ammo Pack 10 Weeks, 3 Days 1
    • 1 $0.53
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    • 100 $0.243
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    SI3127DV-T1-GE3 Reel 13 Weeks 3,000
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    Newark SI3127DV-T1-GE3 Cut Tape 23,199 1
    • 1 $0.188
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    SI3127DV-T1-GE3 Cut Tape 1,734 1
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    SI3127DV-T1-GE3 Reel 1
    • 1 $0.183
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    TTI SI3127DV-T1-GE3 Reel 24,000 3,000
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    TME SI3127DV-T1-GE3 1
    • 1 $0.407
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    Chip 1 Exchange SI3127DV-T1-GE3 483,600
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    Avnet Asia SI3127DV-T1-GE3 15 Weeks 6,000
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    EBV Elektronik SI3127DV-T1-GE3 14 Weeks 3,000
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    Vyrian SI3127DV-T1-GE3 65,677
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    Wuhan P&S SI3127DV-T1-GE3 402,000 1
    • 1 $0.75
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    • 100 $0.3
    • 1000 $0.27
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    Vishay Siliconix SI3127DV-T1-GE3

    Si3127DV Series 60 V 3.5 A Surface Mount P-Channel Mosfet - TSOP-6
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    New Advantage Corporation SI3127DV-T1-GE3 12,000 1
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    Vishay Huntington SI3127DV-T1-GE3

    MOSFET P-CHAN 60V TSOP6S
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    Win Source Electronics SI3127DV-T1-GE3 28,779
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    • 1000 $0.1608
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    SI3127DV Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI3127DV-T1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CHAN 60V TSOP6S Original PDF

    SI3127DV Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si3127DV www.vishay.com Vishay Siliconix P-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the


    Original     		Si3127DV 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si3127DV www.vishay.com Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -60 RDS(on) (Ω) MAX. ID (A) d 0.089 at VGS = -10 V -5.1 0.146 at VGS = -4.5 V -4 • TrenchFET power MOSFET Qg (TYP.) • 100 % Rg and UIS tested 10.1 nC


    Original     		Si3127DV Si3127DV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF