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    SI2302 Price and Stock

    Vishay Siliconix SI2302CDS-T1-E3

    MOSFET N-CH 20V 2.6A SOT23-3
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    DigiKey SI2302CDS-T1-E3 Cut Tape 134,242 1
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    SI2302CDS-T1-E3 Digi-Reel 134,242 1
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    SI2302CDS-T1-E3 Reel 134,242 3,000
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    RS SI2302CDS-T1-E3 Bulk 3,000
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    New Advantage Corporation SI2302CDS-T1-E3 24,000 1
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    Vishay Siliconix SI2302CDS-T1-GE3

    MOSFET N-CH 20V 2.6A SOT23-3
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    DigiKey SI2302CDS-T1-GE3 Cut Tape 29,060 1
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    SI2302CDS-T1-GE3 Digi-Reel 29,060 1
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    SI2302CDS-T1-GE3 Reel 27,000 3,000
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    RS SI2302CDS-T1-GE3 Bulk 3,000
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    Quest Components SI2302CDS-T1-GE3 4,761
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    New Advantage Corporation SI2302CDS-T1-GE3 93,000 1
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    Vishay Siliconix SI2302DDS-T1-GE3

    MOSFET N-CH 20V 2.9A SOT23-3
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    DigiKey SI2302DDS-T1-GE3 Cut Tape 24,125 1
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    SI2302DDS-T1-GE3 Digi-Reel 24,125 1
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    SI2302DDS-T1-GE3 Reel 21,000 3,000
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    RS SI2302DDS-T1-GE3 Bulk 3,000
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    New Advantage Corporation SI2302DDS-T1-GE3 39,000 1
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    Vishay Siliconix SI2302CDS-T1-BE3

    N-CHANNEL 20-V (D-S) MOSFET
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    DigiKey SI2302CDS-T1-BE3 Cut Tape 14,722 1
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    SI2302CDS-T1-BE3 Digi-Reel 14,722 1
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    SI2302CDS-T1-BE3 Reel 12,000 3,000
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    Vishay Siliconix SI2302DDS-T1-BE3

    N-CHANNEL 20-V (D-S) MOSFET
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    DigiKey SI2302DDS-T1-BE3 Digi-Reel 7,786 1
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    SI2302DDS-T1-BE3 Cut Tape 7,786 1
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    SI2302DDS-T1-BE3 Reel 3,000 3,000
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    SI2302 Datasheets (30)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI2302A UMW 20V 2.8A 1.25W 115MR@2.5V,3.1A 1 Original PDF
    Si2302ADS Vishay Intertechnology N-Channel 1.25-W, 2.5-V MOSFET Original PDF
    SI2302ADS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET Original PDF
    SI2302ADS Vishay Telefunken N-Channel 2.5-V (G-S) MOSFET Original PDF
    Si2302ADS-E3 Vishay Transistor Mosfet N-CH 20V 2.1A 3TO-236 Original PDF
    Si2302ADS SPICE Device Model Vishay N-Channel 1.25-W, 2.5-V MOSFET Original PDF
    SI2302ADST1 Vishay TRANSISTER, MOSFET N-CHANNEL 0.115OHMS@2.5V 2A SOT-23 Original PDF
    SI2302ADST1 Vishay Siliconix TRANSISTER, MOSFET N-CHANNEL 0.115OHMS@2.5V 2A SOT-23 Original PDF
    Si2302ADS-T1 Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET Original PDF
    SI2302ADS-T1 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 2.1A SOT23-3 Original PDF
    Si2302ADS-T1-E3 Vishay Transistor Mosfet N-CH 20V 2.1A 3TO-236 REEL Original PDF
    SI2302ADS-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 2.1A SOT23-3 Original PDF
    SI2302ADS-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 2.1A SOT23-3 Original PDF
    SI2302A-TP Micro Commercial Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - N-CHANNEL,MOSFETS,SOT-23 PACKAGE Original PDF
    SI2302A-TP-HF Micro Commercial Interface Original PDF
    SI2302CDS-T1-BE3 Vishay Siliconix N-CHANNEL 20-V (D-S) MOSFET Original PDF
    SI2302CDS-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 2.6A SOT-23 Original PDF
    SI2302CDS-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 2.6A SOT23-3 Original PDF
    SI2302DDS-T1-BE3 Vishay Siliconix N-CHANNEL 20-V (D-S) MOSFET Original PDF
    SI2302DDS-T1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHAN 20V SOT23 Original PDF

    SI2302 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Si2302ADS

    Abstract: Si2302ADS-T1-E3 Si2302ADS-T1-GE3 2A MARKING CODE
    Text: Si2302ADS Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.060 at VGS = 4.5 V 2.4 0.115 at VGS = 2.5 V 2.0 • Halogen-free According to IEC 61249-2-21 Definition • Compliant to RoHS Directive 2002/95/EC


    Original     		Si2302ADS 2002/95/EC O-236 OT-23) Si2302ADS-T1-E3 Si2302ADS-T1-GE3 11-Mar-11 2A MARKING CODE PDF

    Untitled

    Abstract: No abstract text available
    Text: Si2302DDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) Max. ID (A) 0.057 at VGS = 4.5 V 2.9 0.075 at VGS = 2.5 V 2.6 Qg (Typ.) 3.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si2302DDS 2002/95/EC O-236 OT-23) Si2302DDS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    SI2302

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# SI2302 Features • Halogen free available upon request by adding suffix "-HF" • 20V,3.0A, RDS ON =55m¡@VGS=4.5V


    Original     		SI2302 OT-23 OT-23 SI2302 PDF

    sot-23 Marking N2

    Abstract: sot-236 Marking N2 Si2302CDS
    Text: Si2302CDS Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.057 at VGS = 4.5 V 2.9 0.075 at VGS = 2.5 V 2.6 Qg (Typ.) 3.5 • Halogen-free Option Available • TrenchFET Power MOSFET RoHS APPLICATIONS


    Original     		Si2302CDS O-236 OT-23) Si2302CDS-T1-E3 Si2302CDS-T1-GE3 11-Mar-11 sot-23 Marking N2 sot-236 Marking N2 PDF

    SI2302ADS-T1-GE3

    Abstract: Si2302ADS Si2302ADS-T1 Si2302ADS-T1-E3
    Text: Si2302ADS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET FEATURES PRODUCT SUMMARY VDS V 20 RDS(on) (Ω) ID (A) 0.060 at VGS = 4.5 V 2.4 0.115 at VGS = 2.5 V 2.0 • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23) G 1 3 S


    Original     		Si2302ADS O-236 OT-23) Si2302ADS-T1 Si2302ADS-T1-E3 Si2302ADS-T1-GE3 18-Jul-08 PDF

    AN609

    Abstract: Si2302CDS
    Text: Si2302CDS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		Si2302CDS AN609, 14-May-08 AN609 PDF

    C-207

    Abstract: LCD12 LCD20 C208 J504-1
    Text: 1 2 3 4 5 6 7 VCC3 8 +12V VCC3 R196 4.7K 0603B A LCD PANEL TRANSLATION BD CONNECTOR Q24 Q23 SI2302DS SOT23_FET D S G 3 3 A R181 1M 0603B Q27 9 C34 2 FPVCC C55 10P 0603B C41 10P 0603B GND 1 2 3 4 GND CA6 9 33 R37 R46 SCLK LP 9 9 9 9 9 LCD5 LCD4 LCD3 LCD2 LCD13


    Original     		0603B 0603B 33P/8P4C LCD13 LCD12 LCD11 LCD10 LCD17 LCD16 C-207 LCD20 C208 J504-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si2302DDS_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		Si2302DDS AN609, 3004u 7423m 2575m 0840m 8155m 4711m 15-Apr-15 PDF

    Si2302ADS

    Abstract: Si2302ADS-T1-E3 Si2302ADS-T1-GE3
    Text: Si2302ADS Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.060 at VGS = 4.5 V 2.4 0.115 at VGS = 2.5 V 2.0 • Halogen-free According to IEC 61249-2-21 Definition • Compliant to RoHS Directive 2002/95/EC


    Original     		Si2302ADS 2002/95/EC O-236 OT-23) Si2302ADS-T1-E3 Si2302ADS-T1-GE3 18-Jul-08 PDF

    Si2302DS 2A

    Abstract: No abstract text available
    Text: Si2302ADS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (W) ID (A) 0.085 @ VGS = 4.5 V 2.4 0.115 @ VGS = 2.5 V 2.0 TO-236 (SOT-23) G 1 S 2 3 D Ordering Information: Si2302ADS-T1 Top View Si2302DS (2A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		Si2302ADS O-236 OT-23) Si2302ADS-T1 Si2302DS S-32044--Rev. 13-Oct-03 Si2302DS 2A PDF

    Untitled

    Abstract: No abstract text available
    Text: Si2302ADS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (W) ID (A) 0.060 at VGS = 4.5 V 2.4 0.115 at VGS = 2.5 V 2.0 * TO-236 (SOT-23) G 1 S 2 3 D Ordering Information: Si2302ADS-T1 Si2302ADS-T1–E3 (Lead (Pb)–free)


    Original     		Si2302ADS O-236 OT-23) Si2302ADS-T1 Si2302DS 08-Apr-05 PDF

    si2302ds

    Abstract: Si2302ADS Si2302DS 2A
    Text: Si2302ADS New Product Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (W) ID (A) 0.085 @ VGS = 4.5 V 2.4 0.115 @ VGS = 2.5 V 2.0 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2302DS (2A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		Si2302ADS O-236 OT-23) Si2302DS S-20617--Rev. 29-Apr-02 Si2302DS 2A PDF

    Si2302CDS

    Abstract: No abstract text available
    Text: Si2302CDS Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.057 at VGS = 4.5 V 2.9 0.075 at VGS = 2.5 V 2.6 Qg (Typ.) 3.5 • Halogen-free Option Available • TrenchFET Power MOSFET RoHS APPLICATIONS


    Original     		Si2302CDS O-236 OT-23) Si2302CDS-T1-E3 Si2302CDS-T1-GE3 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si2302ADS Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.060 at VGS = 4.5 V 2.4 0.115 at VGS = 2.5 V 2.0 • Halogen-free According to IEC 61249-2-21 Definition • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC


    Original     		Si2302ADS 2002/95/EC O-236 OT-23) Si2302ADS-T1-E3 Si2302ADS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC PDF

    Si2302ADS

    Abstract: Si2302ADS-T1-E3 2A marking Si2302ADS-T1 Si2302ADS-T1-GE3 2A marking code Code T5S 36A8
    Text: Si2302ADS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET FEATURES PRODUCT SUMMARY VDS V 20 RDS(on) (Ω) ID (A) 0.060 at VGS = 4.5 V 2.4 0.115 at VGS = 2.5 V 2.0 • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23) G 1 3 S


    Original     		Si2302ADS O-236 OT-23) Si2302ADS-T1 Si2302ADS-T1-E3 Si2302ADS-T1-GE3 2A marking 2A marking code Code T5S 36A8 PDF

    sot-23 Marking N2

    Abstract: No abstract text available
    Text: Si2302CDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.057 at VGS = 4.5 V 2.9 0.075 at VGS = 2.5 V 2.6 Qg (Typ.) 3.5 • TrenchFET Power MOSFET • Material categorization: For definitions of compliance please see


    Original     		Si2302CDS O-236 OT-23) Si2302CDS-T1-E3 Si2302CDS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A sot-23 Marking N2 PDF

    VNLR02

    Abstract: A1 marking code Si2302DS na4a S-51353
    Text: Si2302DS N-Channel 1.25-W, 2.5-V Rated MOSFET Product Summary VDS V 20 rDS(on) (W) ID (A) 0.085 @ VGS = 4.5 V 2.8 0.115 @ VGS = 2.5 V 2.4 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2302DS (A1)* *Marking Code Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		Si2302DS O-236 OT-23) S-51353--Rev. 11-Dec-96 VNLR02 A1 marking code na4a S-51353 PDF

    Si2302ADS-T1-E3

    Abstract: Si2302ADS Si2302ADS-T1
    Text: Si2302ADS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (Ω) ID (A) 0.060 at VGS = 4.5 V 2.4 0.115 at VGS = 2.5 V 2.0 Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23) G 1 S 2 3 D Ordering Information: Si2302ADS-T1 Si2302ADS-T1-E3 (Lead (Pb)-free)


    Original     		Si2302ADS O-236 OT-23) Si2302ADS-T1 Si2302ADS-T1-E3 08-Apr-05 PDF

    Si2302ADS

    Abstract: No abstract text available
    Text: \\\ SPICE Device Model Si2302ADS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si2302ADS 05-Sep-03 PDF

    marking code vishay SILICONIX sot-23

    Abstract: No abstract text available
    Text: Si2302ADS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (Ω) ID (A) 0.060 @ VGS = 4.5 V 2.4 0.115 @ VGS = 2.5 V 2.0 TO-236 (SOT-23) G 1 S 2 3 D Ordering Information: Si2302ADS-T1 Top View Si2302DS (2A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		Si2302ADS O-236 OT-23) Si2302ADS-T1 Si2302DS 08-Apr-05 marking code vishay SILICONIX sot-23 PDF

    Si2302CDS

    Abstract: No abstract text available
    Text: SPICE Device Model Si2302CDS Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si2302CDS 18-Jul-08 PDF

    Si2302ADS

    Abstract: No abstract text available
    Text: SPICE Device Model Si2302ADS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si2302ADS -50232Rev. 28-Feb-05 PDF

    Si2302CDS

    Abstract: No abstract text available
    Text: SPICE Device Model Si2302CDS Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si2302CDS 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si2302ADS Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.060 at VGS = 4.5 V 2.4 0.115 at VGS = 2.5 V 2.0 • Halogen-free According to IEC 61249-2-21 Definition • Compliant to RoHS Directive 2002/95/EC


    Original     		Si2302ADS 2002/95/EC O-236 OT-23) Si2302ADS-T1-E3 Si2302ADS-T1-GE3 11-Mar-11 PDF