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Vishay Siliconix SI2300DS-T1-GE3 MOSFET N-CH 30V 3.6A SOT23-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI2300DS-T1-GE3	Reel	21,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.15228	Buy Now
RS	SI2300DS-T1-GE3	Bulk			3,000	1 - 10 - 100 - 1000 - 10000 $0.34	Get Quote
Vishay Siliconix SI2306BDS-T1-GE3 MOSFET N-CH 30V 3.16A SOT23-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI2306BDS-T1-GE3	Digi-Reel	11,944		1	1 $0.86 10 $0.535 100 $0.86 1000 $0.23934 10000 $0.23934	Buy Now
	SI2306BDS-T1-GE3	Cut Tape	11,944		1	1 $0.86 10 $0.535 100 $0.86 1000 $0.23934 10000 $0.23934	Buy Now
	SI2306BDS-T1-GE3	Reel	9,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.2061	Buy Now
Vishay Siliconix SI2300DS-T1-BE3 N-CHANNEL 30-V (D-S) MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI2300DS-T1-BE3	Cut Tape	7,727		1	1 $0.59 10 $0.366 100 $0.59 1000 $0.1577 10000 $0.1577	Buy Now
	SI2300DS-T1-BE3	Digi-Reel	7,727		1	1 $0.59 10 $0.366 100 $0.59 1000 $0.1577 10000 $0.1577	Buy Now
	SI2300DS-T1-BE3	Reel	6,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.13422	Buy Now
Micro Commercial Components SI2303-TP MOSFET P-CH 30V 3A SOT23
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI2303-TP	Cut Tape	7,373		1	1 $0.42 10 $0.259 100 $0.42 1000 $0.10868 10000 $0.10868	Buy Now
	SI2303-TP	Digi-Reel	7,373		1	1 $0.42 10 $0.259 100 $0.42 1000 $0.10868 10000 $0.10868	Buy Now
	SI2303-TP	Reel	3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.09156	Buy Now
Vishay Siliconix SI2301BDS-T1-BE3 P-CHANNEL 2.5-V (G-S) MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI2301BDS-T1-BE3	Reel	6,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.13295	Buy Now

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SI230 Datasheets (181)

Part	Manufacturer	Description	Datasheet Type	PDF
SI2300	Kexin	N-Channel Enhancement Mode MOSFET	Original	PDF
SI2300	TY Semiconductor	TY Equivalent - N-Channel Enhancement Mode MOSFET - SOT-23	Original	PDF
SI2300A	UMW	20V 6A 25MR@4.5V,6A 1V@50A N CHA	Original	PDF
SI2300DS-T1-BE3	Vishay Siliconix	N-CHANNEL 30-V (D-S) MOSFET	Original	PDF
SI2300DS-T1-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 3.6A SOT-23	Original	PDF
SI2300-TP	Micro Commercial	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - N-CHANNEL,MOSFETS,SOT-23 PACKAGE	Original	PDF
SI2301-3A	Unknown	MOSFET SOT-23 P Channel 20V	Original	PDF
SI2301A	UMW	20V 2.8A 400MW 142MR@2.5V,2A 1V@	Original	PDF
Si2301ADS	Vishay Intertechnology	P-Channel 2.5-V (G-S) MOSFET	Original	PDF
SI2301ADS	Vishay Telefunken	V(ds): -20V V(gs): ±8V P-channel 2.5-V (G-S) MOSFET	Original	PDF
Si2301ADS-E3	Vishay	Transistor Mosfet P-CH 20V 1.75A 3TO-236	Original	PDF
Si2301ADS-T1	Vishay	Transistor Mosfet P-CH 20V 1.75A 3TO-236 REEL	Original	PDF
Si2301ADS-T1-E3	Vishay	Transistor Mosfet P-CH 20V 1.75A 3TO-236 REEL	Original	PDF
SI2301AHE3-TP	Micro Commercial	Interface	Original	PDF

SI2301A-TP	Micro Commercial	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - P-CHANNEL,MOSFETS,SOT-23 PACKAGE	Original	PDF
Si2301BD	Vishay Siliconix	P-Channel 2.5-V (G-S) MOSFET	Original	PDF
SI2301BDS	Vishay Siliconix	P-Channel 2.5-V (G-S) MOSFET	Original	PDF
Si2301BDS-E3	Vishay	Transistor Mosfet P-CH 20V 2.2A 3TO-236	Original	PDF
Si2301BDS SPICE Device Model	Vishay	P-Channel 2.5-V (G-S) MOSFET	Original	PDF
SI2301BDST1	Vishay	MOSFET,P CHAN,2.5V,SOT23	Original	PDF

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SI230 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
marking L4 mosfet sot23 Abstract: SI2304 Text: Si2304BDS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.070 at VGS = 10 V 3.2 0.105 at VGS = 4.5 V 2.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested	Original	PDF	Si2304BDS 2002/95/EC O-236 OT-23) Si2304BDS-T1-E3 Si2304BDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC marking L4 mosfet sot23 SI2304
si2301 Abstract: No abstract text available Text: Si2301BDS Vishay Siliconix P-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)b 0.100 at VGS = - 4.5 V - 2.4 0.150 at VGS = - 2.5 V - 2.0 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	PDF	Si2301BDS 2002/95/EC O-236 OT-23) Si2301 Si2301BDS-T1-E3 Si2301BDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC
Si2303CDS Abstract: No abstract text available Text: Si2303CDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.190 at VGS = - 10 V - 2.7 0.330 at VGS = - 4.5 V - 2.1 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET	Original	PDF	Si2303CDS O-236 OT-23) Si2303CDS-T1-E3 Si2303CDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.
si2301cds-t1-ge3 Abstract: No abstract text available Text: Specification Comparison www.vishay.com Vishay Siliconix Si2301CDS vs. Si2301BDS Description: Package: Pin Out: P-Channel, 20-V D-S MOSFET SOT-23 Identical Part Number Replacements: Si2301CDS-T1-GE3 replaces Si2301BDS-T1-GE3 Si2301CDS-T1-E3 replaces Si2301BDS-T1-E3	Original	PDF	Si2301CDS Si2301BDS OT-23 Si2301CDS-T1-GE3 Si2301BDS-T1-GE3 Si2301CDS-T1-E3 Si2301BDS-T1-E3 Si2301BDS-T1
si2300 sot-23 Abstract: No abstract text available Text: Product specification KI2300 SI2300 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features VDS=20V,RDS(ON)=75m @VGS=1.8V,ID=1.0A 1 0.55 @VGS=2.5V,ID=4.0A +0.1 1.3-0.1 VDS=20V,RDS(ON)=60m +0.1 2.4-0.1 @VGS=4.5V,ID=5.0A 0.4 3 VDS=20V,RDS(ON)=40m 2 +0.1 0.95-0.1	Original	PDF	KI2300 SI2300) OT-23 si2300 sot-23
SI2301 Abstract: No abstract text available Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# SI2301 Features • • • • • • • • P-Channel Enhancement Mode -20V,-2.8A, RDS ON =120mΩ@VGS=-4.5V	Original	PDF	SI2301 OT-23 OT-23 SI2301
Si2303CDS Abstract: No abstract text available Text: Si2303CDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.190 at VGS = - 10 V - 2.7 0.330 at VGS = - 4.5 V - 2.1 VDS (V) - 30 • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)	Original	PDF	Si2303CDS O-236 OT-23) Si2303CDS-T1-E3 08-Apr-05
Si2304BDS Abstract: Si2304BDS-T1-E3 Text: Si2304BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.070 at VGS = 10 V 3.2 0.105 at VGS = 4.5 V 2.6 • Halogen-free Option Available Qg (Typ.) RoHS 2.6 COMPLIANT TO-236 (SOT-23) G 1 3 S D 2 Top View	Original	PDF	Si2304BDS O-236 OT-23) Si2304BDS-T1-E3 Si2304BDS-T1-GE3 11-Mar-11
Si2309DS Abstract: Si2309DS-T1 Text: Si2309DS Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.340 at VGS = - 10 V - 1.25 0.550 at VGS = - 4.5 V -1 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET TO-236	Original	PDF	Si2309DS O-236 OT-23) Si2309DS-T1 Si2309DS-T1-E3 Si2309DS-T1-GE3 11-Mar-11
Si2302ADS Abstract: Si2302ADS-T1-E3 Si2302ADS-T1-GE3 2A MARKING CODE Text: Si2302ADS Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.060 at VGS = 4.5 V 2.4 0.115 at VGS = 2.5 V 2.0 • Halogen-free According to IEC 61249-2-21 Definition • Compliant to RoHS Directive 2002/95/EC	Original	PDF	Si2302ADS 2002/95/EC O-236 OT-23) Si2302ADS-T1-E3 Si2302ADS-T1-GE3 11-Mar-11 2A MARKING CODE
Si2301 Abstract: Si2301BDS Si2301BDS-T1 Si2301BDS-T1-E3 Text: Si2301BDS Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.100 at VGS = - 4.5 V - 2.4 0.150 at VGS = - 2.5 V - 2.0 VDS (V) - 20 • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23)	Original	PDF	Si2301BDS O-236 OT-23) Si2301 Si2301BDS-T1 Si2301BDS-T1-E3 Si2301BDS-T1-GE3 08-Apr-05
Si2307CDS Abstract: No abstract text available Text: New Product Si2307CDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, b 0.088 at VGS = - 10 V - 2.7 0.138 at VGS = - 4.5 V - 2.2 VDS (V) - 30 Qg (Typ.) APPLICATIONS COMPLIANT • Load Switch for Portable Devices	Original	PDF	Si2307CDS O-236 OT-23) Si2307CDS-T1-E3 Si2307CDS-T1-GE3 11-Mar-11
Untitled Abstract: No abstract text available Text: Si2302DDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) Max. ID (A) 0.057 at VGS = 4.5 V 2.9 0.075 at VGS = 2.5 V 2.6 Qg (Typ.) 3.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	PDF	Si2302DDS 2002/95/EC O-236 OT-23) Si2302DDS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A
4614 mosfet Abstract: Si2304DDS A 0412 MOSFET MOSFET 4614 AN609 Text: Si2304DDS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	PDF	Si2304DDS AN609, 29-Jul-09 4614 mosfet A 0412 MOSFET MOSFET 4614 AN609

Si2305DS-T1-E3 Abstract: SI2305DS-T1 / A5 Si2305DS Si2305DS-T1 Text: Si2305DS Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 • TrenchFET Power MOSFETs: 1.8 V Rated rDS(on) (Ω) ID (A) 0.052 at VGS = - 4.5 V ± 3.5 0.071 at VGS = - 2.5 V ±3 RoHS* 0.108 at VGS = - 1.8 V ±2 COMPLIANT	Original	PDF	Si2305DS O-236 OT-23) Si2305DS-T1 Si2305DS-T1-E3 08-Apr-05 SI2305DS-T1 / A5
SI2302 Abstract: No abstract text available Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# SI2302 Features • Halogen free available upon request by adding suffix "-HF" • 20V,3.0A, RDS ON =55m¡@VGS=4.5V	Original	PDF	SI2302 OT-23 OT-23 SI2302
Si2308BDS-T1-GE3 Abstract: si2308bds Text: New Product Si2308BDS Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.156 at VGS = 10 V 2.3 0.192 at VGS = 4.5 V 2.1 VDS (V) 60 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET	Original	PDF	Si2308BDS O-236 SSOT23) Si2308BDS-T1-E3 Si2308BDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.
Si2306BDS Abstract: Si2306BDS-T1-E3 Si2306BDS-T1-GE3 Text: Si2306BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.047 at VGS = 10 V 4.0 0.065 at VGS = 4.5 V 3.5 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ.) 3.0	Original	PDF	Si2306BDS O-236 OT-23) Si2306BDS-T1-E3 Si2306BDS-T1-GE3 11-Mar-11
SI2306BDS-T1-E3 Abstract: Si2306BDS SI2306DS SI2306DS-T1-E3 120r Si2306DS-T1 Text: Specification Comparison Vishay Siliconix Si2306BDS vs. Si2306DS Description: N-Channel, 30 V D-S MOSFET Package: SOT-23 Pin Out: Identical Part Number Replacements: Si2306BDS-T1-E3 Replaces Si2306DS-T1-E3 Si2306BDS-T1-E3 Replaces Si2306DS-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted	Original	PDF	Si2306BDS Si2306DS OT-23 Si2306BDS-T1-E3 Si2306DS-T1-E3 Si2306DS-T1 06-Nov-06 120r
Untitled Abstract: No abstract text available Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# SI2304 Features • • • • • • • • • N-Channel Enhancement Mode Lead Free Finish/RoHS Compliant "P" Suffix designates	Original	PDF	SI2304 OT-23 OT-23
Si2301 Abstract: Si2301BDS Si2301BDS-T1 Si2301BDS SPICE Device Model Text: Si2301BDS Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.100 @ VGS = −4.5 V −2.4 0.150 @ VGS = −2.5 V −2.0 VDS (V) −20 20 D RoH Lead (Pb)-Free Version is RoHS Compliant Available TO-236 (SOT-23) G 1 3	Original	PDF	Si2301BDS O-236 OT-23) Si2301BDS-T1 Si2301BDS-T1--E3 Si2301 S-50694--Rev. 18-Apr-05 Si2301BDS SPICE Device Model
si2301 Abstract: "MARKING CODE S1" si2301 sot-23 Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# SI2301 Features • • • • • • • P-Channel Enhancement Mode -20V,-2.8A, RDS ON =120mΩ@VGS=-4.5V	Original	PDF	SI2301 OT-23 si2301 "MARKING CODE S1" si2301 sot-23
Si2303DS Abstract: No abstract text available Text: SPICE Device Model Si2303DS P-Channel Enhancement Mode MOSFETs Characteristics • • • • • Applicable Over a -55 to 125 o C Temperature Range • Models Gate Charge, Transient and Diode Reverse P-Channel Vertical DMOS Macro-Model Subcircuit Level 3 MOS	Original	PDF	Si2303DS SI2303DS
SI2304DS marking code SOT-23 Abstract: A4* marking code A4 MARKING CODE Text: SÌ2304DS VISHAY Siliconix ▼ N-Channel 30-V D-S MOSFET PRODUCT SUM M ARY V ds (V) r DS(ON) (-2) I d (A) 0.117 @ VGS = 10 V 2.5 0.190 @ VGS = 4.5 V 2.0 30 TO-236 (SOT-23) Top View Si2304DS (A4)* *Marking Code A B S O L U T E M A X IM U M R A T IN G S (TA = 2 5 ° C U N L E S S O T H E R W IS E N O T E D )	OCR Scan	PDF	2304DS O-236 OT-23) Si2304DS S-56945-- 23-Nov-98 SI2304DS marking code SOT-23 A4* marking code A4 MARKING CODE

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Vishay Siliconix SI2300DS-T1-GE3

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Vishay Siliconix SI2301BDS-T1-BE3

SI230 Datasheets (181)

SI230 Datasheets Context Search

marking L4 mosfet sot23

si2301

Si2303CDS

si2301cds-t1-ge3

si2300 sot-23

SI2301

Si2303CDS

Si2304BDS

Si2309DS

Si2302ADS

Si2301

Si2307CDS

Untitled

4614 mosfet

Si2305DS-T1-E3

SI2302

Si2308BDS-T1-GE3

Si2306BDS

SI2306BDS-T1-E3

Untitled

Si2301

si2301

Si2303DS

SI2304DS marking code SOT-23