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    SI1034 Price and Stock

    Vishay Siliconix SI1034CX-T1-GE3

    MOSFET 2N-CH 20V 0.61A SC89
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    DigiKey SI1034CX-T1-GE3 Digi-Reel 35,699 1
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    SI1034CX-T1-GE3 Cut Tape 35,699 1
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    SI1034CX-T1-GE3 Reel 30,000 3,000
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    Flip Electronics SI1034-B-GM3

    IC RF TXRX+MCU ISM<1GHZ 85LGA
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    DigiKey SI1034-B-GM3 Tray 40
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    Silicon Laboratories Inc SI1034-B-GM3

    IC RF TXRX+MCU ISM<1GHZ 85LGA
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    Flip Electronics SI1034-B-GM3 1,986
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    Vishay Siliconix SI1034X-T1-E3

    MOSFET 2N-CH 20V 0.18A SC89
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    DigiKey SI1034X-T1-E3 Digi-Reel 1
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    SI1034X-T1-E3 Cut Tape 1
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    SI1034X-T1-E3 Reel 3,000
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    Quest Components SI1034X-T1-E3 20
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    Silicon Laboratories Inc SI1034-B-GM3R

    IC RF TXRX+MCU ISM<1GHZ 85LGA
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    Find more SI1034 price and stock on Findchips.com

    SI1034 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI1034-A-GM Silicon Laboratories RF Transceivers, RF/IF and RFID, IC MCU 128KB 8KB RAM 85LGA Original PDF
    SI1034-A-GMR Silicon Laboratories RF Transceivers, RF/IF and RFID, IC MCU 128KB 8KB RAM 85LGA Original PDF
    SI1034-B-GM3 Silicon Labs RF/IF and RFID - RF Transceiver ICs - IC RF TXRX+MCU ISM<1GHZ 85-VFLGA Original PDF
    SI1034-B-GM3R Silicon Labs RF/IF and RFID - RF Transceiver ICs - IC RF TXRX+MCU ISM<1GHZ 85-VFLGA Original PDF
    SI1034CX-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 20V SC89-6 Original PDF
    Si1034X Vishay Intertechnology N-Channel 20-V (D-S) MOSFET Original PDF
    SI1034X Vishay Siliconix MOSFETs Original PDF
    Si1034X SPICE Device Model Vishay N-Channel 20-V (D-S) MOSFET Original PDF
    Si1034X-T1 Vishay Intertechnology N-Channel 20-V (D-S) MOSFET Original PDF
    SI1034X-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 20V 180MA SOT563F Original PDF
    SI1034X-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 20V 180MA SC89-6 Original PDF

    SI1034 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si1034X Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (mA) 5 at VGS = 4.5 V 200 7 at VGS = 2.5 V 175 9 at VGS = 1.8 V 150 10 at VGS = 1.5 V 50 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 1.5 V Rated


    Original     		PDF Si1034X 2002/95/EC SC-89 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si1034X Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (mA) 5 at VGS = 4.5 V 200 7 at VGS = 2.5 V 175 9 at VGS = 1.8 V 150 10 at VGS = 1.5 V 50 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 1.5 V Rated


    Original     		PDF Si1034X 2002/95/EC SC-89 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    AN609

    Abstract: Si1034X 70455 70.455
    Text: Si1034X_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si1034X AN609 27-Apr-07 70455 70.455

    Si1034X

    Abstract: No abstract text available
    Text: SPICE Device Model Si1034X Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si1034X 18-Jul-08

    Si1034X

    Abstract: No abstract text available
    Text: SPICE Device Model Si1034X Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si1034X 150mA 200mA, 28-Jan-02

    Si1034CX-T1-GE3

    Abstract: SC-89-6
    Text: Specification Comparison Vishay Siliconix Si1034CX vs. Si1034X Description: Package: Pin Out: Dual N-Channel, 20 V D-S MOSFET SC89-6 Identical Part Number Replacements: Si1034CX-T1-GE3 replaces Si1034X-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)


    Original     		PDF Si1034CX Si1034X SC89-6 Si1034CX-T1-GE3 Si1034X-T1-GE3 23-Mar-11 SC-89-6

    Untitled

    Abstract: No abstract text available
    Text: Si1034X New Product Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (mA) 5 @ VGS = 4.5 V 200 7 @ VGS = 2.5 V 175 9 @ VGS = 1.8 V 150 10 @ VGS = 1.5 V 50 1.5ĆV Rated FEATURES BENEFITS APPLICATIONS D D D D D D D D D D


    Original     		PDF Si1034X S-03201--Rev. 12-Mar-01

    Untitled

    Abstract: No abstract text available
    Text: Si1034X Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (mA) 5 at VGS = 4.5 V 200 7 at VGS = 2.5 V 175 9 at VGS = 1.8 V 150 10 at VGS = 1.5 V 50 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 1.5 V Rated


    Original     		PDF Si1034X 2002/95/EC SC-89 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si1034CX Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 0.760 at VGS = 1.5 V 0.05 Qg (Typ.) 0.75 • • • • TrenchFET Power MOSFET


    Original     		PDF Si1034CX SC-89 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si1034CX Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 0.760 at VGS = 1.5 V 0.05 Qg (Typ.) 0.75 • • • • TrenchFET Power MOSFET


    Original     		PDF Si1034CX SC-89 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si1034X-T1-E3

    Abstract: SC-89 Si1034X
    Text: Si1034X Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free Option Available RDS(on) (Ω) ID (mA) 5 at VGS = 4.5 V 200 • TrenchFET Power MOSFET: 1.5 V Rated 7 at VGS = 2.5 V 175 • Low-Side Switching 9 at VGS = 1.8 V


    Original     		PDF Si1034X SC-89 08-Apr-05 Si1034X-T1-E3 SC-89

    SC-89

    Abstract: Si1034X
    Text: Si1034X Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (mA) 5 at VGS = 4.5 V 200 7 at VGS = 2.5 V 175 9 at VGS = 1.8 V 150 10 at VGS = 1.5 V 50 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 1.5 V Rated


    Original     		PDF Si1034X 2002/95/EC SC-89 11-Mar-11 SC-89

    Untitled

    Abstract: No abstract text available
    Text: Si1034X Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (mA) 5 at VGS = 4.5 V 200 7 at VGS = 2.5 V 175 9 at VGS = 1.8 V 150 10 at VGS = 1.5 V 50 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 1.5 V Rated


    Original     		PDF Si1034X 2002/95/EC SC-89 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si1034CX Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 0.760 at VGS = 1.5 V 0.05 Qg (Typ.) 0.75 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si1034CX 2002/95/EC SC-89 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si1034CX_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si1034CX AN609, 10-Feb-11 1338u 4578u 1935m 4590m

    SI1034CX

    Abstract: No abstract text available
    Text: Si1034CX Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 0.760 at VGS = 1.5 V 0.05 Qg (Typ.) 0.75 • • • • TrenchFET Power MOSFET


    Original     		PDF Si1034CX SC-89 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SOT563F

    Abstract: Si1034CX-T1-GE3
    Text: Si1034CX Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 0.760 at VGS = 1.5 V 0.05 Qg (Typ.) 0.75 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si1034CX 2002/95/EC SC-89 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SOT563F Si1034CX-T1-GE3

    Untitled

    Abstract: No abstract text available
    Text: Si1034X Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (mA) 5 at VGS = 4.5 V 200 7 at VGS = 2.5 V 175 9 at VGS = 1.8 V 150 10 at VGS = 1.5 V 50 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 1.5 V Rated


    Original     		PDF Si1034X 2002/95/EC SC-89 18-Jul-08

    60408

    Abstract: Si1034X
    Text: SPICE Device Model Si1034X Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si1034X S-60408Rev. 20-Mar-06 60408

    Si1034X-T1-E3

    Abstract: SC-89 Si1034X
    Text: Si1034X Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free Option Available RDS(on) (Ω) ID (mA) 5 at VGS = 4.5 V 200 • TrenchFET Power MOSFET: 1.5 V Rated 7 at VGS = 2.5 V 175 • Low-Side Switching 9 at VGS = 1.8 V


    Original     		PDF Si1034X SC-89 Si1034X-T1-E3 SC-89

    SC-89

    Abstract: Si1034X
    Text: Si1034X New Product Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (mA) 5 @ VGS = 4.5 V 200 7 @ VGS = 2.5 V 175 9 @ VGS = 1.8 V 150 10 @ VGS = 1.5 V 50 1.5ĆV Rated FEATURES BENEFITS APPLICATIONS D D D D D D D D D D


    Original     		PDF Si1034X 08-Apr-05 SC-89

    OPA2333-HT

    Abstract: SBOS483C OPA2333 OPA2333SJD Amplifier k thermocouple texas
    Text: OPA2333-HT www.ti.com SBOS483C – JULY 2009 – REVISED DECEMBER 2010 1.8-V MICROPOWER CMOS OPERATIONAL AMPLIFIER ZERO-DRIFT SERIES Check for Samples: OPA2333-HT FEATURES 1 • • • • • • Low Offset Voltage: 26 mV Max 0.01-Hz to 10-Hz Noise: 1.5 mVPP


    Original     		PDF OPA2333-HT SBOS483C 01-Hz 10-Hz C/210 OPA2333-HT SBOS483C OPA2333 OPA2333SJD Amplifier k thermocouple texas

    Untitled

    Abstract: No abstract text available
    Text: BurrĆBrown Products from Texas Instruments OPA333 OPA2333 SBOS351C – MARCH 2006 – REVISED MAY 2007 1.8V, microPOWER CMOS OPERATIONAL AMPLIFIERS Zerø-Drift Series FEATURES • • • • • • • • DESCRIPTION LOW OFFSET VOLTAGE: 10 V max ZERO DRIFT: 0.05μV/°C (max)


    Original     		PDF OPA333 OPA2333 SBOS351C OPA333

    Untitled

    Abstract: No abstract text available
    Text: OPA369 OPA2369 BurrĆBrown Products from Texas Instruments SBOS414A – AUGUST 2007 – REVISED SEPTEMBER 2007 1.8V, 1 A max, Zerø-Crossover RAIL-TO-RAIL I/O OPERATIONAL AMPLIFIER FEATURES DESCRIPTION 1 • • • • • • 2 ZERØ-CROSSOVER LOW POWER: 1μA max


    Original     		PDF OPA369 OPA2369 SBOS414A SC70-5, OT23-8, OPA369 OPA2369 OPAx369