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    Vishay Siliconix SI1016CX-T1-GE3

    MOSFET N/P-CH 20V SC89
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    DigiKey SI1016CX-T1-GE3 Digi-Reel 29,282 1
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    SI1016CX-T1-GE3 Reel 29,040 3,000
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    Vishay Siliconix SI1016X-T1-GE3

    MOSFET N/P-CH 20V 0.485A SC89
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    DigiKey SI1016X-T1-GE3 Cut Tape 883 1
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    SI1016X-T1-GE3 Digi-Reel 883 1
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    New Advantage Corporation SI1016X-T1-GE3 6,000 1
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    Vishay Siliconix SI1016X-T1-E3

    MOSFET N/P-CH 20V 0.485A SC89
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    Bristol Electronics SI1016X-T1-E3 10 8
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    Quest Components SI1016X-T1-E3 8
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    Lattice Semiconductor Corporation ISPLSI-1016-110LJ

    IC CPLD 64MC 10NS 44PLCC
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    Lattice Semiconductor Corporation ISPLSI-1016-80LT44

    IC CPLD 64MC 15NS 44TQFP
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    SI1016 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI1016CX-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V SC89-6 Original PDF
    Si1016X Vishay Intertechnology Complementary N-and P-Channel 20-V (D-S) MOSFET Original PDF
    SI1016X Vishay Siliconix Complementary N and P-Channel 20-V (D-S) MOSFET Original PDF
    Si1016X-E3 Vishay Transistor Mosfet N-CH P-CH 20V 0.485A 0.37A 6SOT-563 Original PDF
    Si1016X-T1 Vishay Transistor Mosfet N-CH/P-CH 20V 0.485A/0.37A 6SOT-563 REEL Original PDF
    Si1016X-T1-E3 Vishay Transistor Mosfet N-CH/P-CH 20V 0.485A/0.37A 6SOT-563 REEL Original PDF
    SI1016X-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 485MA SOT563F Original PDF
    SI1016X-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 485MA SC89-6 Original PDF

    SI1016 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1016CX www.vishay.com Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 -20 RDS(on) (Ω) ID (A) 0.396 at VGS = 4.5 V 0.50 Qg (TYP.) • High-side switching • Ease in driving switches


    Original     		Si1016CX 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1016X Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 1.2 at VGS = - 4.5 V - 400


    Original     		Si1016X 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    si1016x-t1-ge3

    Abstract: No abstract text available
    Text: Si1016X Vishay Siliconix Complementary N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) (Ω) ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 1.2 at VGS = - 4.5 V - 400 1.6 at VGS = - 2.5 V


    Original     		Si1016X OT-563 SC-89 18-Jul-08 si1016x-t1-ge3 PDF

    SC-89

    Abstract: Si1016X
    Text: Si1016X Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 1.2 at VGS = - 4.5 V - 400


    Original     		Si1016X 2002/95/EC OT-563 SC-89 11-Mar-11 SC-89 PDF

    SI1016X

    Abstract: transistor 2432
    Text: Si1016X Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 1.2 at VGS = - 4.5 V - 400


    Original     		Si1016X 2002/95/EC OT-563 SC-89 18-Jul-08 transistor 2432 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1016CX_GE3_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		Si1016CX AN609, 1333u 4747u 1949m 1247m 28-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si1016CX www.vishay.com Vishay Siliconix N- and P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n- and p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		Si1016CX 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si1016CX Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 0.760 at VGS = 1.5 V


    Original     		Si1016CX 2002/95/EC 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1016X Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 1.2 at VGS = - 4.5 V - 400


    Original     		Si1016X 2002/95/EC OT-563 SC-89 11-Mar-11 PDF

    SC-89

    Abstract: Si1016X Si1016X-T1 Si1016X-T1-E3
    Text: Si1016X Vishay Siliconix Complementary N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 rDS(on) (Ω) ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 1.2 at VGS = - 4.5 V - 400 1.6 at VGS = - 2.5 V


    Original     		Si1016X OT-563 SC-89 08-Apr-05 SC-89 Si1016X-T1 Si1016X-T1-E3 PDF

    AN609

    Abstract: Si1016X
    Text: Si1016X_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si1016X AN609 02-Apr-07 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si1016CX Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 0.760 at VGS = 1.5 V


    Original     		Si1016CX 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si1016CX Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 0.760 at VGS = 1.5 V


    Original     		Si1016CX 2002/95/EC 11-Mar-11 PDF

    SC-89

    Abstract: Si1016X Si1016X-T1-E3
    Text: Si1016X Vishay Siliconix Complementary N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) (Ω) ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 1.2 at VGS = - 4.5 V - 400 1.6 at VGS = - 2.5 V


    Original     		Si1016X OT-563 SC-89 08-Apr-05 SC-89 Si1016X-T1-E3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1016CX www.vishay.com Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 -20 RDS(on) (Ω) ID (A) 0.396 at VGS = 4.5 V 0.50 Qg (TYP.) • High-side switching • Ease in driving switches


    Original     		Si1016CX 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Si1016CX

    Abstract: si1016x-t1-ge3 SI1016X
    Text: Specification Comparison Vishay Siliconix Si1016CX vs. Si1016X Description: Package: Pin Out: N- and P-Channel 20 V D-S MOSFETs SC-89 Identical Part Number Replacements: Si1016CX-T1-GE3 replaces Si1016X-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)


    Original     		Si1016CX Si1016X SC-89 Si1016CX-T1-GE3 Si1016X-T1-GE3 21-Apr-11 PDF

    SI1016CX

    Abstract: sot-563 MOSFET D1 SI-101
    Text: New Product Si1016CX Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 0.760 at VGS = 1.5 V


    Original     		Si1016CX 2002/95/EC 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 sot-563 MOSFET D1 SI-101 PDF

    SC-89

    Abstract: Si1016X
    Text: Si1016X New Product Vishay Siliconix Complementary N- and P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (mA) 0.70 @ VGS = 4.5 V 600 0.85 @ VGS = 2.5 V 500 1.25 @ VGS = 1.8 V 350 1.2 @ VGS = –4.5 V –400


    Original     		Si1016X 08-Apr-05 SC-89 PDF

    si1016x-t1-ge3

    Abstract: SC-89 Si1016X Si1016X-T1-E3
    Text: Si1016X Vishay Siliconix Complementary N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) (Ω) ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 1.2 at VGS = - 4.5 V - 400 1.6 at VGS = - 2.5 V


    Original     		Si1016X OT-563 SC-89 18-Jul-08 si1016x-t1-ge3 SC-89 Si1016X-T1-E3 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si1016CX Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 0.760 at VGS = 1.5 V


    Original     		Si1016CX 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1016X Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 1.2 at VGS = - 4.5 V - 400


    Original     		Si1016X 2002/95/EC OT-563 SC-89 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    SC-89

    Abstract: Si1016X
    Text: Si1016X New Product Vishay Siliconix Complementary N- and P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (mA) 0.70 @ VGS = 4.5 V 600 0.85 @ VGS = 2.5 V 500 1.25 @ VGS = 1.8 V 350 1.2 @ VGS = –4.5 V –400


    Original     		Si1016X S-03104--Rev. 08-Feb-01 SC-89 PDF

    Untitled

    Abstract: No abstract text available
    Text: TPS65120, TPS65121, TPS65123, TPS65124 www.ti.com SLVS531A – JUNE 2004 – REVISED MARCH 2005 SINGLE-INDUCTOR QUADRUPLE-OUTPUT TFT LCD POWER SUPPLY • FEATURES • • • • Main Output, VMAIN – Adjustable Voltage, 3.0 V to 5.6 V/25 mA – Post-Regulated for Low Ripple 5mVPP


    Original     		TPS65120, TPS65121, TPS65123, TPS65124 SLVS531A PDF

    QFN-16

    Abstract: TPS65120 TPS65120RGT TPS65121 TPS65121RGT TPS65123 TPS65123RGT TPS65124 LQ LB1608
    Text: TPS65120, TPS65121, TPS65123, TPS65124 www.ti.com SLVS531A – JUNE 2004 – REVISED MARCH 2005 SINGLE-INDUCTOR QUADRUPLE-OUTPUT TFT LCD POWER SUPPLY • FEATURES • • • • Main Output, VMAIN – Adjustable Voltage, 3.0 V to 5.6 V/25 mA – Post-Regulated for Low Ripple 5mVPP


    Original     		TPS65120, TPS65121, TPS65123, TPS65124 SLVS531A 16-Pin QFN-16 TPS65120 TPS65120RGT TPS65121 TPS65121RGT TPS65123 TPS65123RGT TPS65124 LQ LB1608 PDF