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    SHF0186K Search Results

    SHF0186K Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SHF-0186K Sirenza Microdevices DC-3 GHz, 0.5 Watt AlGaAs/GaAs HFET Original PDF
    SHF-0186K-TR1 Sirenza Microdevices DC-4 GHz, 0.5 Watt AIGaAs/GaAs HFET Original PDF
    SHF-0186K-TR2 Sirenza Microdevices DC-4 GHz, 0.5 Watt AIGaAs/GaAs HFET Original PDF
    SHF-0186K-TR3 Sirenza Microdevices DC-4 GHz, 0.5 Watt AIGaAs/GaAs HFET Original PDF

    SHF0186K Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    AN-020

    Abstract: sirenza fet
    Text: Product Description Sirenza Microdevices’ SHF-0186K is a high performance AlGaAs/GaAs Heterostructure FET HFET housed in a lowcost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity.


    Original
    SHF-0186K 100mA. SHF-0186K TypiSHF-0186K EDS-101577 AN-020 sirenza fet PDF

    SHF-0186K

    Abstract: Sirenza Microdevices, Inc sirenza fet
    Text: Product Description Sirenza Microdevices’ SHF-0186K is a high performance AlGaAs/GaAs Heterostructure FET HFET housed in a lowcost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity.


    Original
    SHF-0186K 100mA. 100mA) SHF-0186K EDS-101577 Sirenza Microdevices, Inc sirenza fet PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Description SHF-0186K Stanford Microdevices’ SHF-0186K is a AIGaAs/GaAs Heterostructure FET housed in a low cost surface mount plastic package. HFET technology improves breakdown voltage for high drain voltage operation. Its low Schottky leakage current improves power added efficiency.


    Original
    SHF-0186K SHF-0186K SHF-0186K-TR1 SHF-0186K-TR2 SHF-0186K-TR3 PDF

    SHF-0186K

    Abstract: AN020 shf0186k
    Text: Preliminary Preliminary Product Description Stanford Microdevices’ SHF-0186K is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added


    Original
    SHF-0186K 100mA. SHF-0186K EDS-101577 AN020 shf0186k PDF

    shf0186k

    Abstract: SHF-0186K Sirenza Microdevices, Inc
    Text: Product Description Sirenza Microdevices’ SHF-0186K is a high performance AlGaAs/GaAs Heterostructure FET HFET housed in a lowcost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity.


    Original
    SHF-0186K 100mA. 100mA) SHF-0186K EDS-101577 shf0186k Sirenza Microdevices, Inc PDF

    HFET

    Abstract: SHF-0186K-TR2 SHF-0186K-TR3 SHF-0186K SHF-0186K-TR1
    Text: Product Description SHF-0186K Stanford Microdevices’ SHF-0186K is a AIGaAs/GaAs Heterostructure FET housed in a low cost surface mount plastic package. HFET technology improves breakdown voltage for high drain voltage operation. Its low Schottky leakage current improves power added efficiency.


    Original
    SHF-0186K SHF-0186K SHF-0186K-TR1 SHF-0186K-TR2 SHF-0186K-TR3 HFET SHF-0186K-TR2 SHF-0186K-TR3 SHF-0186K-TR1 PDF

    2.5 GHz RF power transistors with s-parameters

    Abstract: No abstract text available
    Text: 1Stanford Microdevices SHF-0186K Product Description Stanford M icrodevices’ SHF-0186K is a AIG aAs/G aAs Heterostructure FET housed in a low cost surface mount plastic package. HFET technology im proves breakdown voltage for high drain voltage operation. Its low Schottky


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    SHF-0186K SHF-0186K SHF-0186K-TR1 SHF-0186K-TR2 SHF-0186K-TR3 2.5 GHz RF power transistors with s-parameters PDF

    Untitled

    Abstract: No abstract text available
    Text: SHF-0186, -0186K DC-12 GHz, 0.5 Watt AIGaAs/GaAs HFET October, 1995 Features - AIGaAs/GaAs H e te ro stru ctu re FET T ech n o lo g y - High Pow er Added E fficie n cy: Up to 40% - High A sso cia te d G ain: 16dB T ypical at 2GHz - A vailable in P lastic o r Flanged Ceram ic Package


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    SHF-0186, -0186K DC-12 Id-150mA) 50mAj 150mA, PDF

    Untitled

    Abstract: No abstract text available
    Text: 1Stanford Microdevices Product Description SHF-0186K Stanford M icrodevices’ SHF-0186K is a AIG aAs/G aAs Heterostructure FET housed in a low cost surface mount plastic package. HFET technology im proves breakdown voltage for high drain voltage operation. Its low Schottky


    OCR Scan
    SHF-0186K SHF-0186K PDF

    SNA-486

    Abstract: SPF-1576 SPF-2076 Z27D SPF-1676 sna-186 SPDT FETs
    Text: Table of Contents Model Description SPF-284 SPF-484 SPF-684 SPF-884 SPF-1576 SPF-1676 Low-Noise GaAs FETs 1-2GHz 0.8dB NF r 2GHz 1-2GHz 0.5dB NF ® 2G H z 2-!2G H z0.7dB NF ¡34G H z 2-12GHz 0.5dB NF {n}4GHz 2-26GHz 0.6dB NF ® 12GHz 2-26G H z0.5dB N F ® 12G H z


    OCR Scan
    SPF-284 SPF-484 SPF-684 SPF-884 SPF-1576 SPF-1676 SPF-2076 SPF-2098 SPF-2298 SPF-2086 SNA-486 Z27D sna-186 SPDT FETs PDF

    Untitled

    Abstract: No abstract text available
    Text: SHF-0186K Product Description Stanford M icrodevices’ SHF-0186K is a AIG aAs/G aAs Heterostructure FET housed in a low cost surface mount plastic package. HFET technology im proves breakdown voltage for high drain voltage operation. Its low Schottky leakage current im proves power added efficiency.


    OCR Scan
    SHF-0186K SHF-0186K PDF