SHARP DIP4 Search Results

microprocessor coffee vending machine

Abstract: DVD optical pick-up assembly coffee vending machine circuit OPTO switch SHARP sharp cmos IR sensor cmos SENSOR "global shutter" HD sme IGBT optical pickup unit sharp CD DVD 4413 smd triac gate control circuits
Contextual Info: SF/OPTO/1108 Contacts Where to find out more about Sharp’s OPTO-electronic technology? Just contact us and our specialist consultants will be glad to help in any way. Liaison Offices Sharp Microelectronics Europe* SME Paris Office 1 Rue Raoul Follereau Bussy Saint Georges

Contextual Info: L H 5 3 B 8 V 8M Mask ROM Model No.: LHMB8Vxx Spec No.: EL099187 Issue Date: November 6, 1997 D SHARP LH53B8V00D •Handle this docuaent carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited

Contextual Info: SHARP CORP biE ]> LH534P00 • aiao?« ooGiaao ost « s r p j CM O S 4M 512K x 8 / 256K x 16 Mask-Programmable ROM PIN CONNECTIONS FEATURES • • 524,288 x 8 bit organization (Byte mode) 262,144 x 16 bit organization (Word mode) 40-PIN DIP TOP VIEW

4kx8 static ram ttl

Abstract: QQ042 lh5921
Contextual Info: SHARP ELEK/ MELEC »IV 2bE D • 61607=18 000423b b « S R P J PRELIMINARY LH5921/LH5922/LH5924 CMOS 32K 4KX8 Dual Port RAM LH5921/LH5922/LH5924 CMOS 32K (4KX8) Dual Port RAM ■ ■ Description The LH5921, LH5922/U and LH5924/U are dual port static RAMs organized as 4KX8 bits that have

cey marking code

Abstract: 816P
Contextual Info: SHARP L H 5 3 1 6 P 0 ODD C O N T E N T S 1. General Description P2 2. Features P2 3. Block Diagraa P3 4. Pin Connections P4 5. Pin Description P4 6. Absolute ïaiinna Ratings PS 7. Opwatine Sanges P5 S. B.C. Electrical Characteristics P5 9. À.C. Electrical Characteristics

jwu17

Contextual Info: I P. 24 88. 08. 29. * 17 î17 SHLARP SPEC Ko. E L Q 8 6 1 Q 2 I S S g I: Jwu 17 1396 To - , S P E C I F I CAT I ONS Product Type 16M MAS K ROM LH537NXX Kode I Wo. (L H 5 3 1 6 P Q 0 DP ) ^ Hi is spécifications contains 12 pagfrg including; the cover and appendix.

Lemo

Contextual Info: I P. 24 88. 08. 29. * 17 î17 SHLARP SPEC Ko. E L Q 8 6 1 Q 2 I S S g I: Jwu 17 1396 To - , S P E C I F I CAT I ONS Product Type 16M MAS K ROM LH537NXX Kode I Wo. (L H 5 3 1 6 P Q 0 DP ) ^ Hi is spécifications contains 12 pagfrg including; the cover and appendix.

42-PIN

Contextual Info: CMOS 2 4 M 3 M x 8 MROM FEATURES PIN CONNECTIONS • 3,145,728 x 8 bit organization 42-PIN DIP TOP VIEW • Access time: 150 ns (MAX.) • Supply current: -O p e ra tin g : 65 mA (MAX.) -S ta n d b y : 100[iA(M AX.) • TTL compatible I/O • Three-state output

Contextual Info: PRELIMINARY LH532000B-S FEATURES • Low-power supply: 2.6 to 5.5 V CMOS 2M 256K x 8/128K x 16 3 V-Prive Mask-Program m able ROM • Packages: 40-pin, 600-mil DIP 40-pin, 525-mil SOP 44-pin, 1 0 x 1 0 mm2 QFP 44-pin, 14 x 14 mm2 QFP 48-pin, 1 2 x 1 8 mm2 TSOP (Type I)

code C3J

Abstract: marking code C3J marking c3j marking code 8hs
Contextual Info: LH53B8600D 8M Mask ROM Model No.: LHMB86xx Spec No.: EL099183 Issue Date: November 6, 1997 LH53B8600D •Handle this docuaent carefully for it contains Material protected by international copyright la». Any reproduction, full or in part, of this material is prohibited

sharp lh531

Abstract: sharp mask rom 40-pin sharp mask rom
Contextual Info: PRELIMINARY L H 5 3 H 1 CMOS 1M 64K x 16 Mask-Programmable ROM FEATURES DESCRIPTION • 65,5 3 6 x 16 bit organization • Access time: 55 ns (M AX.) The LH53H1000 is a high speed mask-programma­ ble ROM organized as 65,536 x 16 bits (1,048,576 bits). It is fabricated using silicon-gate CMOS process tech­

dl321

Contextual Info: LH534600 FEATURES • CMOS 4M 512K x 8 / 256K x 16 Mask-Programmable ROM DESCRIPTION 524,288 x 8 bit organization (Byte mode) 262,144 x 16 bit organization (Word mode) • BYTE input pin selects bit configuration • Access time: 100 ns (MAX.) • Low-power consumption:

40-pin EPROM pinout

Contextual Info: LH53H1000 PRELIMINARY CMOS 1M 64K x 16 Mask Programmable ROM FEATURES • 65,536 x 16 bit organization • Access time: 55 ns (MAX.) • Power consumption: Operating: 660 mW (MAX.) Standby: 440 mW (MAX.) DESCRIPTION The LH53H1000 is a high speed mask programma­

Contextual Info: LH5316500C FEATURES CMOS 16M 2M x 8/1M x 16 Mask-Programmable ROM PIN CONNECTIONS • 2,097,152 x 8 bit organization (Byte mode) 1,048,576 x 16 bit organization (Word mode) • Access time: 150 ns (MAX.) • Power consumption: Operating: 275 mW (MAX.) Standby: 550 nW (MAX.)

iz14d

Contextual Info: C M O S 2 4 M 1 .5 M x 1 6 M R O M FEATURES PIN CONNECTIONS • 1,572,864 x 16 bit organization IO P VIEW 42-PIN DIP - S ta n d b y : 1 0 0 |iA (M A X .) • TTL com patible I/O • Three-state output • Single +5 V Power supply • Static operation • When the address input at both A i 9 and

sharp mask rom 44-pin

Abstract: I321D
Contextual Info: LH538500A FEATURES • DESCRIPTION 1,0 48,5 76 x 8 bit organization Byte mode 524 ,288 x 16 bit organization (Word mode) • CMOS 8M (1M x 8 / 512K x 16) Mask-Programmable ROM B YTE input pin selects bit configuration The LH538500A is a mask-programmable ROM

sharp mask rom 44-pin

Abstract: 6 pin Dt3
Contextual Info: LH538500A / FEATURES • 1,048,576 x 8 bit organization (Byte mode 524,288 x 16 bit organization (Word mode) • BYTE input pin selects bit configuration CMOS 8M (1M x 8 / 512K x 16) Mask Programmable ROM DESCRIPTION The LH538500A is a mask programmable ROM

sharp mask rom 44-pin

Abstract: sharp mask rom AE-C17
Contextual Info: LH534000B FEATURES • Memory organization selection: 524,288 x 8 bit byte mode 262,144 x 16 bit (word mode) • BYTE input pin selects bit configuration • Access time: 200 ns (MAX.) • Low-power consumption: Operating: 275 mW (MAX.) Standby: 550 |aW (MAX.)

Contextual Info: PRELIMINARY LH534000B-S FEATURES • Low-power supply: 2.6 to 5.5 V • 524,288 x 8 bit organization Byte mode 262,144 x 16 bit organization (Word mode) CMOS 4M (512K x 8/256K x 16) 3V-Drive Mask-Program m able ROM PIN CONNECTIONS TOP VIEW 40-PIN DIP 40-PIN SOP

Contextual Info: CMOS 24 M 3M 8 MROM PIN CONNECTIONS FEATURES • 3,145,728 x x 8 bit organization 4 2 -P IN D IP T O P • Access time: 150 ns (MAX.) • Supply current: - Operating: 65 mA (MAX.) -S ta n d b y : 10 0 |iA (M A X .) • TTL compatible I/O • Three-state output

Contextual Info: LH538500A FEATURES • 1,048,576 x 8 bit organization Byte mode 524,288 x 16 bit organization (Word mode) • BYTE input pin selects bit configuration • Access time: 150 ns (MAX.) CM O S 8M (1M x 8 / 512K x 16) Mask-Programmable ROM DESCRIPTION The LH538500A is a mask-programmable ROM

A-1435

Abstract: 538P00-1 8 bit dip switch 538P00-6 iB33AA
Contextual Info: LH538P00 • PIN CONNECTIONS 1,048,576 x 8 bit organization Byte mode 5 2 4 ,2 8 8 x 16 bit organization (Word mode) • • Access time: 120 ns (M AX.) Pow er consumption: Operating: 3 3 0 mW (M AX.) Standby: 550 (M AX.) 42-PIN DIP f a ,8C a Static operation

LH534500A

Abstract: LH534500
Contextual Info: LH534500A PIN CONNECTIONS FEATURES • • • • CMOS 4M 512K x 8 / 256K x 16 Mask-Programmable ROM Memory organization selection: 524,288 x 8 bit (byte mode) 262,144 x 16 bit (word mode) TOP VIEW 40-PIN DIP 40-PIN SOP 1• i 40 □ A , a 7C 2 39 □ A9

Contextual Info: PRELIMINARY LH5316501 C M O S 16M 2M x 8 / 1M x 16 M a s k -P ro g ra m m a b le ROM FEATURES • 2,097,152 x 8 bit organization (Byte mode) 1,048,576 x 16 bit organization • TTL compatible I/O • Three-state outputs • Single +5 V power supply • Packages: