LH534000B Search Results

48-PIN

Abstract: LH534
Contextual Info: LH534000B-S FEATURES • 524,288 words x 8 bit organization Byte mode 262,144 words × 16 bit organization (Word mode) • Access times: 500 ns (2.6 V ≤ VCC < 4.5 V) 200 ns (4.5 V ≤ VCC ≤ 5.5 V) • Wide range power supply: 2.6 to 5.5 V • Static operation

Contextual Info: LH534000B-S CMOS 4M 512K x 8/256K x 16 3V-Drive MROM PIN CONNECTIONS FEATURES • 524,288 words x 8 bit organization x 16 bit organization 40-PIN DIP 40-PIN SOP (Byte mode) 262,144 words TOP VIEW r A17 C (Word mode) • Access times: 500 ns (2.6 V < Vcc < 4.5 V)

sharp mask rom 44-pin

Abstract: sharp mask rom AE-C17
Contextual Info: LH534000B FEATURES • Memory organization selection: 524,288 x 8 bit byte mode 262,144 x 16 bit (word mode) • BYTE input pin selects bit configuration • Access time: 200 ns (MAX.) • Low-power consumption: Operating: 275 mW (MAX.) Standby: 550 |aW (MAX.)

Contextual Info: PRELIMINARY LH534000B-S FEATURES • Low-power supply: 2.6 to 5.5 V • 524,288 x 8 bit organization Byte mode 262,144 x 16 bit organization (Word mode) CMOS 4M (512K x 8/256K x 16) 3V-Drive Mask-Program m able ROM PIN CONNECTIONS TOP VIEW 40-PIN DIP 40-PIN SOP

Contextual Info: LH534000B FEATURES • Memory organization selection: 524,288 x 8 bit byte mode 262,144 x 16 bit (word mode) • BYTE input pin selects bit configuration • Access time: 200 ns (MAX.) • Low-power consumption: Operating: 275 mW (MAX.) Standby: 550 (MAX.)

48-PIN

Contextual Info: LH534000B-S FEATURES CMOS 4M 512K x 8/256K x 16 3V-Drive M ask-Program m able ROM PIN CONNECTIONS • 524,288 words x 8 bit organization (Byte mode) 262,144 words x 16 bit organization (Word mode) 40-PIN DIP 40-PIN SOP TOP VIEW 1« \ 40 □ Ay C 2 39 I] Ag

Contextual Info: LH534000B FEATURES • CMOS 4M 512K x 8 / 256K x 16 Mask-Programmable ROM PIN CONNECTIONS Memory organization selection: 524 ,2 8 8 x 8 bit (byte mode) 2 6 2 ,1 4 4 x 16 bit (word mode) • B YTE input pin selects bit configuration • Access time: 200 ns (M AX.)

Contextual Info: LH534000B-S FEATURES • 524,288 words x 8 bit organization Byte mode 262,144 words x 16 bit organization (Word mode) CMOS 4M (512K x 8/256K x 16) 3V-Drive MROM PIN CONNECTIONS 40-PIN DIP 40-PIN SOP TOP VIEW / 1* 40 □ 2 39 □ Ag A6 □ 3 38 □ A 10 5 c

Contextual Info: LH534000B-S FEATURES • 524,288 words x 8 bit organization Byte mode 262,144 words x 16 bit organization (Word mode) CMOS 4M (512K x 8/256K x 16) 3V-Drive Mask-Programmable ROM PIN CONNECTIONS 40-P IN D IP 40-PIN S O P T O P V IEW f a 17 C 1» N 40 I ] Ag

Contextual Info: PRELIMINARY LH534000B-S CM OS 4M 512K x 8 / 256K x 16 3V-Drive M ask-P rogram m able ROM PIN CONNECTIONS FEATURES • Low-power supply: 2.6 to 5.5 V • 524,288 x 8 bit organization (Byte mode) 262,144 x 16 bit organization (Word mode) 4 0 -P IN D IP 4 0 -P IN S O P

lh5s4

Abstract: lh5348 LH5s lh5s47xx 48-TSOP LH53H4100D LH53H4100N lh534y00d 48TSOP sharp mask rom
Contextual Info: NEW PRODUCT INFORMATION SHARP LH53 H4100 • Description High-speed 4M-bit Mask-Programmable ROM ■ Pin Connections The LH53H4100D/N User's No. ! LH5H41XX is a CMOS 4M-bit mask-programmable ROM organized as 524 288 X 8 bits. It is fabricated using sillicon-gate CMOS process technology.

536G

Abstract: LH534600
Contextual Info: MEMORIES • Mask ROMs Process Capacity * Configuration words X bits Pinout Access time Model No. (ns) MIN. Supply current (mA) MAX. Supply voltage (V) (ns) MAX. User's No. Cycle tima Package 256k 32k X 8 J LH53259D/N/T L H 5359X X 150 25 5 ± 10% 28DIP/28SOP/28TSOP(I)

lh57257

Abstract: IR2E31 IR2E01 IR2C07 IR2E27 IR2E24 IR2E19 IR2E31A IR3n06 IR2E02
Contextual Info: Index Model No. ARM7D CPU Core Bi-CMOS 1 27 40,42 _ _ CMOS CMOS CMOS CMOS CMOS 4A 5A 8 A AH D ID1 Series ID2 Series 40,42 40.42 40,42 40,42 40 B ü.’1*"! 14,15 14 m IR2339 IR2403 IR2406 IR2406G IR2410 IR2411 IR2415 IR2419 IR2420 IR2422 IR2425 IR2429

LH231G

Abstract: lh5348 LH538b LH2326 lh5s4 LHMN5 lh5359 lh5348xx lh537 LH235
Contextual Info: MEMORIES ★Under development • M ask ROMs SlpÉHRfi Bonflgmllan jvorai x d m i NMOS <"^g|g|ï|ïi£- User1* No. sssysr Sllpjiijp 1 currant mA MAX. ■ Paefcagfe ft- • 64k 8k x 8 LH2389D LH2369XX 200 60 5 ± 10% 28DIP 128k 16k x 8 LH23128D LH2326XX 200

flash 64m

Contextual Info: MEMORIES Mask ROMs C a p a c ity Access time C o nfig u ra tio n 120ns 100ns 80ns 150ns 256kj I 32k x 8 ] LH53259 12k I 64k x 8 LH53517 128k x 8 LH530800A LH531V00 1M LH531024 64k x 16 i LH532100B-1 256k x 8 ! LH532100B 2M JEDEC standard EPROM pinout 128k x 161

lh5348

Abstract: lh5s4 48TSO
Contextual Info: ü fi LH53V4R00 LH53V4R00-2 • Description ■ Pin Connect for T h e L H 5 3 V 4 R 0 0 N /T , L H 5 3 V 4 R 0 0 N /T -2 U ser's N o . : L H 5V 4R X X is a CM OS 4 M -b it m ask-program m able ROM 32-pin SOP organized as 524 288 X 8 bits. It provides a high-speed access time o f 120/150 ns with low

lh5348

Abstract: TSOP032-P-0820 lh5s4 flash memory sop 32-pin lh5348xx lh5s47xx
Contextual Info: NEW PRODUCT INFORMATION LH53V4R00 LH53V4R00-2 • Low-Voltage • High-Speed 4M-bit Mask-Programmable ROM Description Pin Connection T he L H 5 3 V 4 R 0 0 N /T , L H 5 3 V 4 R 0 0 N /T -2 U s e r's N o. : LH5V4RXX is a CM O S 4M -bit m ask-program m able ROM

lh5s4

Abstract: lh5348 sharp lh53 lh5s47xx LH5S47 60446 sharp mask rom LH53V4R00N LH5H41XX TSOP032-P-0820
Contextual Info: NEW PRODUCT INFORMATION LH53V4R00 LH53V4R00-2 • Description Low-Voltage • High-Speed 4M-bit Mask-Programmable ROM Pin Connection The L H 53V 4R 00N /T , L H 53V 4 R 0 0 N /T -2 U ser’s N o. : LH5V4RXX is a CMOS 4M -bit mask-programmable ROM 32-pin SOP

41C1000

Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
Contextual Info: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258

48 tsop flash pinout

Abstract: LH23512
Contextual Info: MEMORIES Mask ROMs ^Under development Capacity Pinout Model No. Configuration Access time ns 55 1 64k !- 1 8k x 8 128k 16k x ! 256k 32k x 8 |- -) [ 512k 64k x 8 b — I 80 100 120 150 200 Package 250 500 □ LH2369 28 LH23255 28 □ LH53259 28 28 38(1)

41C464

Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Contextual Info: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page

K93C46

Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257

TC55B8128

Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6

TC55B4257

Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264