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    SGU02N60 Search Results

    SGU02N60 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SGU02N60 Infineon Technologies Original PDF

    SGU02N60 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary data SIEMENS SGP02N60, SGB02N60, SGD02N60, SGU02N60 Fast S-IGBT in NPT-Technology • 75 % lower E0ff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 is • Designed for moderate and high frequency applications:


    OCR Scan
    SGP02N60, SGB02N60, SGD02N60, SGU02N60 SGP02N60 O-220AB Q67041-A4707-A2 SGB02N60 O-263AB Q67041-A4707-A4 PDF

    SGU02N60

    Abstract: ic 0941 SGB02N60 P-TO252 SGD02N60 SGP02N60
    Text: SGP02N60, SGB02N60 SGD02N60, SGU02N60 Fast S-IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original
    SGP02N60, SGB02N60 SGD02N60, SGU02N60 O-220AB Q67041-A4707-A2 O-263AB Q67041-A4707-A4 SGD02N60 SGU02N60 ic 0941 SGB02N60 P-TO252 SGD02N60 SGP02N60 PDF

    SGP02N60

    Abstract: SGU02N60 SGB02N60 SGD02N60 BUP410D
    Text: Preliminary data SGP02N60, SGB02N60, SGD02N60, SGU02N60 Fast S-IGBT in NPT-Technology • 75 % lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 µs • Designed for moderate and high frequency applications:


    Original
    SGP02N60, SGB02N60, SGD02N60, SGU02N60 SGP02N60 O-220AB Q67041-A4707-A2 SGB02N60 O-263AB Q67041-A4707-A4 SGP02N60 SGU02N60 SGB02N60 SGD02N60 BUP410D PDF

    BUZ MOSFET

    Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
    Text: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8


    OCR Scan
    615NV BSP318S BUZ MOSFET mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S PDF

    BUZ MOSFET

    Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D
    Text: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package


    Original
    615NV OT-223 20iemens B152-H6493-G5-X-7600 BUZ MOSFET mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D PDF

    SIPC69N60C3

    Abstract: SPW20N60S5 equivalent sipc01n80c2 P-Channel Depletion Mosfets SKP15N60 BUZ78 equivalent SPNA2N80C2 BUP314 SIPC26N80C3 TDA16822
    Text: File name Products Silicon Carbide Diodes thinQ 300V / 600V SDP06S60 SDP04S60 SDB10S30 SiC_Pspice.zip Smart High Side Switches High-Current PROFET BTS555 BTS550P BTS650P PROFET_Pspice.exe Smart Low Side Switches TEMPFET / Speed TEMPFET HITFET BTS114A BSP78


    Original
    SDP06S60 SDP04S60 SDB10S30 BTS555 BTS550P BTS650P BTS114A BSP78 BTS115A BTS134D SIPC69N60C3 SPW20N60S5 equivalent sipc01n80c2 P-Channel Depletion Mosfets SKP15N60 BUZ78 equivalent SPNA2N80C2 BUP314 SIPC26N80C3 TDA16822 PDF