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    SGSP479

    Abstract: sgsp478 P479 p479 to218 SGSP579 75637 DM 7449 SGSP478/P578
    Text: S G S-THOtlSôN ^ m m ^ ^ * J 73C _ 07 E D | 7^5^637 iH ^ t3 ° - 7 ^ 3 ^ V 3 - G D Î 7 6i 4 b |t 1 f 1/SGSP478/P479j I« a 3 ;SGSP578/P579 ' N_CHANNEL poWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate


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    PDF 1/SGSP478/P479j SGSP578/P579 OT-93 SGSP478 SGSP578 SGSP479 SGSP579 C-171 SCSP478/P479 P479 p479 to218 75637 DM 7449 SGSP478/P578

    IRF722P

    Abstract: IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10
    Text: CROSS REFERENCE SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI 2SK312 2SK313


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    PDF 2SK295 2SK296 2SK308 2SK310 2SK311 2SK312 2SK313 2SK319 2SK320 2SK324 IRF722P IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10

    TP8N10

    Abstract: th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40
    Text: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI


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    PDF 2SK295 2SK296 2SK308 2SK310 2SK311 2SK312 2SK313 2SK319 2SK320 2SK324 TP8N10 th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40

    SEF442

    Abstract: c230 diode SEF440
    Text: S G S-THOMSON S 7T2ci237 QQlâQD'i : 73C 17 506 D T- 3 f . N -C H A N N EL POW ER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field effect transistors. A BSO LU TE MAXIMUM RATINGS


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    PDF SEF440 SEF441 SEF442 SEF443 00V/450V 00V/450V SEF443 c230 diode