SGS MOS TRANSISTOR Search Results

Contextual Info: f Z 7 SGS-THOMSON TECHNICAL NOTE AN INTRODUCTION TO POWER MOS A POWER MOS transistor is a power transistor pro­ duced with MOS, and not the usual bipolar tech­ nology. Special characteristics are high switching speeds and easy driving. This introductory note describes

Contextual Info: rz T SGS-THOMSON *•7#. ¡»mmgsraraofss TECHNICAL NOTE AN INTRODUCTION TO POWER MOS A POWER MOS transistor is a power transistor pro­ duced with MOS, and not the usual bipolar tech­ nology. Special characteristics are high switching speeds and easy driving. This introductory note describes

VDMOS

Abstract: VDMOS DEVICE
Contextual Info: /T T SGS-THOMSON ^ 7 Ê R Æ O iS ^ O ilL tlÊ iri^ lS ^ D Ê S TECHNICAL NOTE EVOLUTION OF POWER MOS TRANSISTORS The vertical double diffused MOS silicon gate tech­ nology represents the final evolution of the deve­ lopment of a process to obtain POWER MOS

VDMOS DEVICE

Contextual Info: S G S -T H O M S O N itLKSTTMIiÎODÊS TECHNICAL NOTE EVOLUTION OF POWER MOS TRANSISTORS The vertical double diffused MOS silicon gate tech­ nology represents the final evolution of the deve­ lopment of a process to obtain POWER MOS devices, started in SGS in 1977.

SGS-ATES l120

Abstract: National Semiconductor 4045 transistor bf 175 TAA611
Contextual Info: PROFESSIONAL SEMICONDUCTOR INTRODUCTION This databook contains data sheets on the SGS-ATES range of linear, MOS and COS/MOS integrated circuits intended for professional applications. The information on each product has been specially presented in order that the

D100E

Abstract: ic uc3842 BUV48 SE sgsd00031 SGSD00039 uc3842 application 600V BU508 BU810
Contextual Info: / S T SGS-THOMSON [M «m i g1TIMlM(gS APPLICATION NOTE HIGH VOLTAGE TRANSISTORS WITH POWER MOS EMITTER SWITCHING INTRODUCTION This paper summarizes the results of an investi­ gation carried out on power devices with both MOS and BIPOLAR parts working together in the same

BUV48 SE

Abstract: SGSD00036 kkz 10
Contextual Info: rZ 7 SGS-THOMSON [fflD g œ iIlL IÊ ÏÏM M ! TECHNICAL NOTE COMPARISON OF POWER MOS AND BIPOLAR POWER TRANSISTORS It is highly predictable that in the near future POWER MOS will, in many applications, gradually replace power bipolar devices due to the numerous

u810 diode

Abstract: diode u810 flyback uc3842 power supply BUV48 SE u810 sgsd00031 SGSP321 BU508 BU810
Contextual Info: SGS-THOMSON 5 7 ,. APPLICATION NOTE HIGH VOLTAGE TRANSISTORS WITH POWER MOS EMITTER SWITCHING INTRODUCTION This paper summarizes the results of an investi­ gation carried out on power devices with both MOS and BIPOLAR parts working together in the same circuit. The “ emitter drive” configuration was con­

TSD5MG40V

Abstract: STHV102 TSD5MG40F sthv QG30S
Contextual Info: 30E D • 71S1SB7 DQ3058b H T '- S f i- lS SGS-THOMSON s s . CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE S-THOMSON N TYPE V dss Ros on Id TSD5MG40F/V 1000 V 0.7 n 17 A ■ . ■ ■ ■ ■ . « TSD5MG40F TSD5MG40V HIGH CURRENT POWER MOS MODULE

SD 1496 transistor

Abstract: TSD2M350F
Contextual Info: 30 E T> n 7 ^ 5 3 7 QG3D534 SGS-THOMSON ^ ^ HLJOTMWi ¿ 5 7 '5 7 TSD2M350F TSD2M350V s 6 S-THOMSON N - CHANNEL ENHANCEMENT MODE _ ISOFET POWER MOS TRANSISTOR MODULE ADVANCE DATA TYPE V TSD2M350F/V dss 400 V RDS on 0.150 Id n 30 A • . . . HIGH CURRENT POWER MOS MODULE

5358A

Abstract: d 317 transistor TSD4M251F TSD4M251V SP 358 s
Contextual Info: 3QE D • 7^237 Q0305Sb b SGS-THOMSON IILHO T *! Ç7 ' r 3 °i S G S-THOMSON 5 TSD4M251F TSD4M251V N - CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE TY P E V dss RDS on Id TS D 4M 251F/V 150 V 0.021 n 110 A . . ■ ■ . . ■ . HIGH CURRENT POWER MOS MODULE

schematic diagram UPS

Abstract: TSD180N10V k 815 MOSFET smps&ups TSD180N10F
Contextual Info: 3QE D • OGBOS^ä □ ■ ^ I & L i fi SGS-THOMSON immwms; * J n ~ l£ TSD180N10F TSD180N10V N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE S-THOIISON TENTATIVE DATA TY P E TS D 180N 10F /V V dss RDS on Id 100 V 0.007 i l 180 A . VERY HIGH DENSITY POWER MOS

TSD4M350V

Abstract: T397 TSD4M350F IRFP350 L072A
Contextual Info: 3QE T> m 7^5^537 00305b5_l • SGS-THOMSON i L[iOT(s*S s g N - CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE S-THOMSON TY P E V d ss RDS(on Id TS D 4M 350F /V 400 V 0.075 n 50 A . . . ■ ■ . « . TSD4M350F TSD4M350V HIGH CURRENT POWER MOS MODULE

400v p - CHANNEL mos

Abstract: STH9N50D
Contextual Info: SGS-THOMSON STH9N50D M N - CHANNEL ENHANCEMENT MODE _ FREDFET PRELIMINARY DATA TYPE STH9N50D V dss RDS on Id 500 V 0.85 a 9 A • POWER MOS TRANSISTOR WITH FAST RECOVERY BULK DIODE: COMPLETE DIODE SPECIFICATION . PARTICULARLY SUITABLE FOR BRIDGE

STK2N50

Contextual Info: SGS-THOMSON STK2N50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STK2N 50 ' V dss R d s oii Id 500 V 6 Ü 2 A . AVALANCHE RUGGEDNESS TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C . APPLICATION ORIENTED CHARACTERIZATION

Contextual Info: 3QE D • 7 ^ 5 3 7 QQ3074Q T ■ £Z7 SGS-THOMSON Ä 7# [* ^ « [IO T a [* S IR F K 4 H 4 5 0 s g s - thomson" N - CHANNEL ENHANCEMENT MODE -POWER MOS TRANSISTOR MODULE TYPE IRFK4H450 V d ss RDS(on) Id 500 V 0.1 n 44 A ■ . « . HIGH CURRENT POWER MOS MODULE

TSD4M450V

Abstract: tsd4m450 TSD4M450F
Contextual Info: 3PE c ï s g » • 7^5*1537 Q D3 Q5 74 SGS-THOMSON id O T * ! ï N TYPE V dss RDS on lo 500 V 0.1 £2 45 A ■ . ■ ■ TSD4M450F TSD4M450V _ CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE S-THOMSON TSD4M450F/V ■ ■ ■ ■ ÔJB HIGH CURRENT POWER MOS MODULE

TSD2M450V

Abstract: TSD2M450F TSD2M450
Contextual Info: 30E S G S-THOMSON Q03GS3b D SGS-THOMSON X - 3 ° \- \5 iy D TSD2M450F TSD2M450V N - CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE A D VANC E DATA TYPE V d ss RDS on Id T S D 2 M 4 5 0 F /V 500 V 0 .2 n 26 A . . . • HIGH CURRENT POWER MOS MODULE

Contextual Info: SGS-THOMSON [MOigœilLiera *® STP53N08 N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V dss R dS oii Id STP53N 08 80 V < 0.024 Û. 53 A . TYPICAL Ros(on) =0.018 £1 . A VALANCE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED

Contextual Info: /= T SGS-THOMSON * 7 # . iMnaoiiLiCTisiMnei_ BUZ11A c h ip N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils METALLIZATION: Top Back Al A u /C r/N i/A u BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE:

5460a

Abstract: STV50N05 D073
Contextual Info: / I T SGS-THOMSON ^7# IRülOOTSIILIlCTIBSllülOGS STV50N05 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss R D S on lo STV50N05 50 V < 0.028 ß 50 A • . . . . . . . TYPICAL RDS(on) = 0.022 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

Contextual Info: * 7/ SGS-THOMSON ilLiCTWDe STB5NA80 N - CHANNEL ENHANCEMENT MODE _POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STB5NA80 V dss RDS on Id 800 V < 2.4 Í2 4.7 A . . . . . . . TYPICAL RDs(on) =1.8 ft AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

GC2269

Contextual Info: SGS-THOMSON STP3N50XI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP3N 50XI . . • . . V dss RoS on Id 500 V 4 il 1,7 A AVALANCHE RUG G EDN ESS TECHNOLO GY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C APPLICATION O RIENTED CHARACTERIZATION

10n50d

Abstract: STH10N50
Contextual Info: SGS-THOMSON STH10N50D EO N - CHANNEL ENHANCEMENT MODE FREDFET PRELIMINARY DATA TYPE STH 10N 50D V dss RDS on Id 500 V 0 .6 5 il 10 A • POWER MOS TRANSISTOR WITH FAST RECOVERY BULK DIODE: COMPLETE DIODE SPECIFICATION . PARTICULARLY SUITABLE FOR BRIDGE CONFIGURATION