SFE 5.5 Search Results
SFE 5.5 Price and Stock
Murata Manufacturing Co Ltd SFE5.5MBDCERAMIC FILTER |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SFE5.5MBD | 1,597 |
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Murata Manufacturing Co Ltd SFE5.5MBFCERAMIC FILTER |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SFE5.5MBF | 538 |
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Murata Manufacturing Co Ltd SFE5,5MBTF21Electronic Component |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SFE5,5MBTF21 | 4,500 |
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SFE 5.5 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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sfe 5.5Contextual Info: SFE, SFR Polystyrene EVOX SFE, SFR Construction Polystyrene c a p ac ito r w ith radial leads • 1 Polystyrene film with metal foil elec trodes and radial tinned wires. Wound to a compact cylindrical form. SFE is coated with an epoxy resin for ex tended operating temperature range. |
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e10.7a
Abstract: sfe 5.5 murata E10.7F sfe10.7mhy E10.7A ceramic SFE10.7MA19 E10,7A SFE10.7MFP SFE10 SFE10.7MA21
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SFE10 7MA19 7MA20-A 7MA21 e10.7a sfe 5.5 murata E10.7F sfe10.7mhy E10.7A ceramic SFE10.7MA19 E10,7A SFE10.7MFP SFE10.7MA21 | |
e10.7a
Abstract: E10.7F SFE10,7A murata SFE10.7MA21 -E107-T
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SFE10 7MA19 7MA20-A 7MA21 e10.7a E10.7F SFE10,7A murata SFE10.7MA21 -E107-T | |
e10.7a
Abstract: SFE10 MURATA sfe 5.5 MHZ E10,7A murata sfe10.7ma20-a E10.7A ceramic E107a SFE 10.7 MX SFE10.7MA21 SFE10.7MT
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SFE10 7MA19 7MA20-A 7MA21 7MA19 e10.7a MURATA sfe 5.5 MHZ E10,7A murata sfe10.7ma20-a E10.7A ceramic E107a SFE 10.7 MX SFE10.7MA21 SFE10.7MT | |
cq24-000
Abstract: Q24060 98l18
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Q24000 Q24000 A7D1320-0892 755-AMCC cq24-000 Q24060 98l18 | |
LT 6742
Abstract: MURATA SFE MHZ sfe 5.5 murata murata sfe sfe 4.5 murata sfe murata murata sft ceramic filter murata filter murata ceramic filter sfe 5.5 SFE
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e10.7a
Abstract: E10.7A ceramic SFE10 sfe 5.5 murata murata sfe10.7ma20-a E10,7A SFE 10.7 MX SFE10.7mt sfe 5.5 SFE -E107-T
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SFE10 7MA19 7MA20-A 7MA21 7MA19 e10.7a E10.7A ceramic sfe 5.5 murata murata sfe10.7ma20-a E10,7A SFE 10.7 MX SFE10.7mt sfe 5.5 SFE -E107-T | |
sfe 5.5 MB ceramic filter
Abstract: SFE 5.5 ceramic filter sfe 6,5 mb sfe 5,5 mb murata sfe sfe 5.5 murata SFE10M7 Murata SFE 4.7 Mb SFE 5.5 Mb sfe 4.5 murata
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Contextual Info: SSI 32F8144 ¿mmsvskms Programmable Electronic Filter A TDK G roup/C om pany January 1994 DESCRIPTION FEATURES This custom integrated circuit incorporates a pulse equalizer of variable equalization and variable band w idth w ith a tran sfe r function of a 2 zero/7 pole linear |
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32F8144 | |
Contextual Info: Technical Specifications 102 Series Fischer Connectors SA Saint-Prex, Switzerland Phone +41 21 800 95 95 Fax +41 21 800 39 24 www.fischerconnectors.com mail@fischerconnectors.ch Multipole Low Voltage Product range covered: S / SC / SA / SV / SOV / SS / SSC / WSO / SF / SFE / SFU / SFPE / SFPU / D / DB / DBP / DBPC / DG / DGP |
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Contextual Info: 10 | 3 | 2 | 1 i±se NOTES 1. m MATERIAL F (PA) . # y * m . S&.UL9LV-0 HOUSING : POLYAMIDE , GLASS FILLED, WHITE, UL9LV-D 7?f 7i-FV^)U7 7 l'(PPS), #7 •*:£*. Sfe • UL9LV-0 ACTUATOR : POLYPHENYLENE SULFIDE , GLASS FILLED, BROWN, UL94V-0 9- ?±)U : Uvfffld = 0.2 ) |
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UL94V-0 SD-527Z6-032 | |
Contextual Info: UCC1888 UCC2888 UCC3888 y UNITRODE Off-line Power Supply Controller W ide 10OVDC to 400VD C Allow able Input Range Fixed 5VD C o r A djustable Low Voltage O utput O utput Sinks 200m A, Sources 150m A Into a M O SFE T G ate Uses Low C ost SM D Inductors Short C ircuit Protected |
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UCC1888 UCC2888 UCC3888 10OVDC 400VD UCC3888 NE-10 | |
UFN533
Abstract: C1B4 FN531
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T347Tk3 0Q1070& ufn53i UFN532 UFN533 UFN533 C1B4 FN531 | |
Contextual Info: A • R W .\A A P T 1 0 M 11 B 2 V R dvanced pow er Te c h n o lo g y " ioov 100a 0.01 i q POWER MOS V‘ Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, |
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O-247 APT10M1B2VR | |
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2SK2528-01
Abstract: SC-65 fus20
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2SK2528-01 0257-R-004a 0257-R-003a 2SK2528-01 SC-65 fus20 | |
apt50m85jvrContextual Info: • R ADVANCED APT50M85JVR W /Æ P o w e r Techno lo g y soov soa o.ossq POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V® |
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APT50M85JVR OT-227 APT50M85JVR E145592 | |
Contextual Info: • R A dvanced r M po w er Tec h n o lo g y APT501OJ VR soov44a o.-iooq POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V® |
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APT501OJ soov44a OT-227 APT5010JVR E145592 | |
TI OAEContextual Info: • R ADVANCED W .\A p o w e r Te c h n o lo g y “ APT40M35JVR 400v 93a 0.035Q POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V® |
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APT40M35JVR OT-227 APT40M35JVR E145592 TI OAE | |
Contextual Info: • R A dvanced r M po w er Tec h n o lo g y APT20M22JVR 200V 97A 0.022Q POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V® |
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APT20M22JVR OT-227 E145592 | |
SK 8051 S
Abstract: uPD75X sk 8051
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S-24S30R/I S-24S30R/I 80perature D0D1610 SK 8051 S uPD75X sk 8051 | |
Contextual Info: APT5020BVR • R A dvanced W .\A pow er Te c h n o l o g y “ soov 26a 0.200Q POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V® |
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APT5020BVR O-247 | |
Contextual Info: APT30M19JVR A dvanced W /Æ P O W E R Te c h n o lo g y ' • R 300V 0.01 9q 130a POWER MOS V‘ Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V® |
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APT30M19JVR OT-227 APT30M19JVR E145592 | |
2SK49
Abstract: transistor 2sk49 reciver circuit for radio transistor KIN NEC CIR TC306 radio reciver
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2SK49 2SK49 J22686 TC-3063A transistor 2sk49 reciver circuit for radio transistor KIN NEC CIR TC306 radio reciver | |
Contextual Info: SO NY ICX059ALB 1/3 inch CCD Image Sensor for CCIR B/W Camera D escription T he IC X 059 A L B is an interline tra n sfe r C C D solid-state im ag e s e n s o r s u ita b le fo r C C IR B /W v id e o c a m e ra s . H igh se n sitiv e n e s s and low dark c u rre n t are a ch ie ved |
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ICX059ALB 1/50s 1/100s 1/10000s 0D0L721 |