APT40M35JVR Search Results
APT40M35JVR Price and Stock
Microchip Technology Inc APT40M35JVRMOSFET N-CH 400V 93A SOT227 |
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APT40M35JVR | Tube | 2 | 1 |
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APT40M35JVR | Tube | 20 Weeks | 10 |
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APT40M35JVR | 1 |
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APT40M35JVR | Bulk | 10 |
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APT40M35JVR | Tube | 20 Weeks |
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APT40M35JVR |
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APT40M35JVR | 1 |
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APT40M35JVR | 5 |
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APT40M35JVR |
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Microsemi Corporation APT40M35JVRTransistors |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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APT40M35JVR | 2 |
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APT40M35JVR Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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APT40M35JVR | Advanced Power Technology | N-Channel enhancement mode power MOSFET | Original |
APT40M35JVR Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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TI OAEContextual Info: • R ADVANCED W .\A p o w e r Te c h n o lo g y “ APT40M35JVR 400v 93a 0.035Q POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V® |
OCR Scan |
APT40M35JVR OT-227 APT40M35JVR E145592 TI OAE | |
Contextual Info: APT40M35JVR A dvanced P o w er Te c h n o lo g y 400V 93A 0.035Q POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™ |
OCR Scan |
APT40M35JVR OT-227 APT40M35JVR MIL-STD-750 832nH. OT-227 | |
Contextual Info: APT40M35JVR 93A 0.035Ω 400V POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT40M35JVR OT-227 E145592 | |
Contextual Info: APT40M35JVR A dvanced P o w er Te c h n o l o g y 400V 93A 0.035Í1 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™ |
OCR Scan |
APT40M35JVR OT-227 | |
APT40M35JVRContextual Info: APT40M35JVR 93A 0.035Ω 400V POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT40M35JVR OT-227 E145592 APT40M35JVR | |
nt 6600 G
Abstract: APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr
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APT1201R6BVR APT1201R5BVR APT1001RBVR APT10086BVR APT8075BVR APT8065BVR APT8056BVR APT6040BVR APT6035BVR APT6030BVR nt 6600 G APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr | |
APT10026JN
Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
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MIL-PRF-19500 ISO9001 APT10026JN apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR | |
5017BVR
Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
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MIL-PRF-19500 ISO9001 5017BVR 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60 | |
mj 1504 transistor equivalent
Abstract: ARF450 FREDFETs transistors mj 1504 APT1201R2BLL APT60GF120JRD APT60M75JVR APT100S20B APT4014BVR APT1208
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APT6015LVR
Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR
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MIL-PRF-19500 ISO9001 APT6015LVR 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR | |
APT100GF60LR
Abstract: 1200 volt mosfet FREDFETs sot-227 footprint APT75GP120JDF3 APT609RK3VFR APT8075BVR APT5010jvr APT20M19JVR APT1001RBVR
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