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Diodes Incorporated SF30FG-T DIODE GEN PURP 300V 3A DO201AD
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DigiKey	SF30FG-T	Reel			1,200	1 - 10 - 100 - 1000 - 10000 $0.2625	Buy Now
Diodes Incorporated SF30FG-B DIODE GEN PURP 300V 3A DO201AD
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DigiKey	SF30FG-B	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now

SF30FG Datasheets (8)

Part	Manufacturer	Description	Datasheet Type	PDF
SF30FG	Diodes Incorporated	3.0A SUPER-FAST GLASS PASSIVATED RECTIFIER	Original	PDF
SF30FG	Diodes Incorporated	Short Form Selection Guide	Original	PDF
SF30FG	Diodes Incorporated	3.0A SUPER-FAST GLASS PASSIVATED RECTIFIER	Original	PDF
SF30FG	Diodes Incorporated	3.0 A Super-Fast Glass Passivated Rectifier	Original	PDF
SF30FG	Lite-On Technology	300V, 3.0A super fast glass passivated rectifier	Original	PDF
SF30FG	Vishay	Ultra-Fast Rectifier (trr less than 100nsec)	Original	PDF
SF30FG-B	Diodes Incorporated	RECTIFIER FAST-RECOVERY SINGLE 3A 300V 125A-ifsm 1.3V-vf 40ns 5uA-ir DO-201AD 500/BULK	Original	PDF
SF30FG-T	Diodes Incorporated	RECTIFIER FAST-RECOVERY SINGLE 3A 300V 125A-ifsm 1.3V-vf 40ns 5uA-ir DO-201AD 1.2K/REEL-13	Original	PDF

SF30FG Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
SF30BG Abstract: SF30DG SF30FG SF30GG SF30HG SF30JG Text: LITE-ON SEMICONDUCTOR SF30BG thru SF30JG REVERSE VOLTAGE - 100 to 600 Volts FORWARD CURRENT - 3.0 Amperes SUPER FAST GLASS PASSIVATED RECTIFIERS DO-201AD FEATURES Glass passivated chip Super fast switching time for high efficiency Low forward voltage drop and high current capability	Original	PDF	SF30BG SF30JG DO-201AD DO-201AD SF30GG SF30HG SF30FG SF30DG SF30GG SF30JG
SMD Transistors w04 sot-23 Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355 Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.	Original	PDF	represent9-14 SMD Transistors w04 sot-23 transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
DO-201AD Abstract: 201AD SF30AG SF30FG SF30JG af30g Text: SF30AG - SF30JG 3.0A SUPER-FAST GLASS PASSIVATED RECTIFIER Features • · · · · Glass Passivated Die Construction · Lead Free Finish, RoHS Compliant Note 4 Diffused Junction Super-Fast Switching for High Efficiency B A High Current Capability and Low Forward Voltage Drop	Original	PDF	SF30AG SF30JG DO-201AD J-STD-020C 500/Bulk SF30BG-T 13-inch SF30CG-B DO-201AD 201AD SF30FG SF30JG af30g
MUR1560 equivalent Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in	Original	PDF	MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
1n5822 trr Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50 Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay	Original	PDF	MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
OZ 9983 Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45 Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —	Original	PDF	MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Diode 1N4007 DO-7 Rectifier Diode Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced	Original	PDF	MBRM120ET3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 Diode 1N4007 DO-7 Rectifier Diode FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
smd marking 911 zener Abstract: d3g smd NPN Transistor smd code LY 83 marking codes transistors a8 sot-23 TRANSISTOR SMD MARKING CODE s2a 1045ct mosfet SOD-123 a18 W06* MARKING smd code KBJ 3580 6045pt Text: RETURN TO SHORT FORM TABLE OF CONTENTS ################################### RETURN TO SHORT FORM INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Short Form Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 September 1999 Specifications are subject to change without notice.	Original	PDF	M5263B, ZMM5264B, ZMM5265B, ZMM5266B, ZMM5267B, ZMM56, ZMM62, ZMM68, ZMM75, smd marking 911 zener d3g smd NPN Transistor smd code LY 83 marking codes transistors a8 sot-23 TRANSISTOR SMD MARKING CODE s2a 1045ct mosfet SOD-123 a18 W06* MARKING smd code KBJ 3580 6045pt
CAT7105CA Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A	Original	PDF	5CE120C 5KE120CA 5CE120CA 5CE12A 5KE12A 5CE12C 5KE12CA 5CE12CA CAT7105CA mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Untitled Abstract: No abstract text available Text: SF30AG - SF30JG 3.0A SUPER-FAST GLASS PASSIVATED RECTIFIER POWER SEMICONDUCTOR Features • • • • • • Glass Passivated Die Construction Diffused Junction Super-Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop	Original	PDF	SF30AG SF30JG MIL-STD-202, DO-201AD SF30AGSF30GG SF30HGSF30JG DS24014
Untitled Abstract: No abstract text available Text: LITE ON POWER SEMICONDUCTOR SF30BG thru SF30JG REVERSE VOLTAGE - 100 to 600 Volts FORWARD CURRENT - 3.0 Amperes SUPER FAST GLASS PASSIVATED RECTIFIERS DO-201AD FEATURES Glass passivated chip Super fast switching time for high efficiency Low forward voltage drop and high current capability	Original	PDF	SF30BG SF30JG DO-201AD DO-201AD SF30GG SF30HG SF30FG
Diodes SF30 Abstract: No abstract text available Text: SF30AG - SF30JG 3.0A SUPER-FAST GLASS PASSIVATED RECTIFIER Features • · · · · · Glass Passivated Die Construction Diffused Junction Super-Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 125A Peak	Original	PDF	SF30AG SF30JG MIL-STD-202, DO-201AD SF30AGSF30GG SF30HGSF30JG DS24014 Diodes SF30
SF30BG Abstract: SF30CG SF30DG SF30FG SF30GG SF30HG SF30JG SF30AG Text: SF30AG–SF30JG Vishay Lite–On Power Semiconductor 3.0A Super–Fast Glass Passivated Rectifiers Features D D D D Glass passivated die construction Diffused junction Super–fast switching for high efficiency High current capability and low forward voltage	Original	PDF	SF30AG SF30JG SF30AG SF30BG SF30CG SF30DG SF30FG SF30GG SF30HG SF30BG SF30CG SF30DG SF30FG SF30GG SF30HG SF30JG
SF30JG Abstract: SF30AG SF30FG Text: SF30AG - SF30JG 3.0A SUPER-FAST GLASS PASSIVATED RECTIFIER Features • · · · · · Glass Passivated Die Construction Diffused Junction Super-Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 125A Peak	Original	PDF	SF30AG SF30JG DO-201AD MIL-STD-202, DS24014 SF30JG SF30FG

SF30BG Abstract: SF30DG SF30FG SF30GG SF30HG SF30JG Text: LITE-ON SEMICONDUCTOR SF30BG thru SF30JG REVERSE VOLTAGE - 100 to 600 Volts FORWARD CURRENT - 3.0 Amperes SUPER FAST GLASS PASSIVATED RECTIFIERS DO-201AD FEATURES Glass passivated chip Super fast switching time for high efficiency Low forward voltage drop and high current capability	Original	PDF	SF30BG SF30JG DO-201AD DO-201AD SF30GG SF30HG SF30FG SF30DG SF30GG SF30JG
Untitled Abstract: No abstract text available Text: SF20AG - SF20JG 2.0A SUPER-FAST GLASS PASSIVATED RECTIFIER Features • · · · · · · Glass Passivated Die Construction Diffused Junction Super-Fast Switching for High Efficiency B A High Current Capability and Low Forward Voltage Drop A Surge Overload Rating to 60A Peak	Original	PDF	SF20AG SF20JG DO-15 J-STD-020C MIL-STD-202, DS24013 SF20AG-T SF30BG-T
stpr16 Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode Text: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •	Original	PDF	MURB1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 stpr16 MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
b2545 transistor Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface Text: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection	Original	PDF	MBR2535CT, MBR2545CT MBR2545CT B2535, B2545 VHE205 VHE210 VHE215 VHE220 VHE2401 b2545 transistor TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
MR2835S equivalent Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502 Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected	Original	PDF	MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
AF30G Abstract: No abstract text available Text: SF30AG - SF30JG 3.0A SUPER-FAST GLASS PASSIVATED RECTIFIER Features • · · · · Glass Passivated Die Construction · Lead Free Finish, RoHS Compliant Note 4 Diffused Junction Super-Fast Switching for High Efficiency B A High Current Capability and Low Forward Voltage Drop	Original	PDF	SF30AG SF30JG DO-201AD J-STD-020C Polarity01AD 500/Bulk SF30BG-T 13-inch AF30G
Diodes SF30 Abstract: SF30AG SF30FG SF30JG Text: SF30AG - SF30JG 3.0A SUPER-FAST GLASS PASSIVATED RECTIFIER Features • · · · · · Glass Passivated Die Construction Diffused Junction Super-Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 125A Peak	Original	PDF	SF30AG SF30JG DO-201AD MIL-STD-202, SF30AGSF30GG SF30HGSF30JG DS24014 Diodes SF30 SF30FG SF30JG
MUR1560 equivalent Abstract: 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent Text: Index and Cross Reference The following table represents an index and cross reference guide for all rectifier devices which are either manufactured directly by ON Semiconductor or for which ON Semiconductor manufactures a suitable equivalent. Where the ON	Original	PDF	MR852 VHE1401 VHE1402 VHE1403 VHE1404 VHE205 VHE210 MUR1560 equivalent 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent
AP3039AM Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502 Text: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)	Original	PDF	2000/53/EC 2000/53/EC 2002/95/EC 2011/65/EU SOR/2014-254 SJ/T11363-2006 GL-106 AP3039AM 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
Untitled Abstract: No abstract text available Text: SF30AG-SF30JG Vishay Lite-On Power Semiconductor 3.0A Super-Fast Glass Passivated Rectifiers Features • G lass passivated die construction • Diffused junction • S u p e r-fa s t sw itching fo r high efficiency • High current capability and low forw ard voltage	OCR Scan	PDF	SF30AG-SF30JG SF30AG SF30BG SF30C SF30D SF30FG SF30G SF30H SF30JG D-74025

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SF30FG Search Results

SF30FG Price and Stock

Diodes Incorporated SF30FG-T

Diodes Incorporated SF30FG-B

SF30FG Datasheets (8)

SF30FG Datasheets Context Search

SF30BG

SMD Transistors w04 sot-23

DO-201AD

MUR1560 equivalent

1n5822 trr

OZ 9983

Diode 1N4007 DO-7 Rectifier Diode

smd marking 911 zener

CAT7105CA

Untitled

Untitled

Diodes SF30

SF30BG

SF30JG

SF30BG

Untitled

stpr16

b2545 transistor

MR2835S equivalent

AF30G

Diodes SF30

MUR1560 equivalent

AP3039AM

Untitled