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SEMIX303GD12E4C Price and Stock

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SEMIKRON SEMIX303GD12E4C Igbt Module, Six, 1.2Kv, 466A; Continuous Collector Current:466A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:-; Operating Temperature Max:125°C; Igbt Termination:Press Fit; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes \|Semikron SEMIX303GD12E4C
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	SEMIX303GD12E4C	Bulk			2	1 $1299.52 10 $1263.17 100 $1190.47 1000 $1190.47 10000 $1190.47	Buy Now
SEMIKRON SEMIX303GD12E4C 27890210 Module: IGBT; transistor/transistor; IGBT three-phase bridge
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SEMIX303GD12E4C 27890210				1	1 $1456.27 10 $1071.4 100 $994.42 1000 $994.42 10000 $994.42	Get Quote

SEMIX303GD12E4C Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: SEMiX303GD12E4c Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 359 A 300 A ICnom ICRM SEMiX 33c Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C	Original	PDF	SEMiX303GD12E4c E63532
SEMiX303GD12E4c Abstract: No abstract text available Text: SEMiX303GD12E4c Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 359 A 300 A ICnom ICRM SEMiX 33c Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C	Original	PDF	SEMiX303GD12E4c E63532 SEMiX303GD12E4c
Untitled Abstract: No abstract text available Text: SEMiX303GD12E4c Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 359 A 300 A ICnom ICRM SEMiX 33c Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C	Original	PDF	SEMiX303GD12E4c E63532 AppliX303GD12E4c
Untitled Abstract: No abstract text available Text: SEMiX303GD12E4c Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 359 A 300 A ICnom ICRM SEMiX 33c Trench IGBT Modules SEMiX303GD12E4c VGES tpsc Tj ICRM = 3xICnom VCC = 800 V	Original	PDF	SEMiX303GD12E4c E63532
Untitled Abstract: No abstract text available Text: SEMiX303GD12E4c Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 359 A 300 A ICnom ICRM SEMiX 33c Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C	Original	PDF	SEMiX303GD12E4c E63532 3xIF3GD12E4c
SEMIX353GB126V1 Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1 Text: Product Change Notification product group: SEMiX no.: 09-039 Change of SEMiX housing subject of change: change of SEMiX housing, namely form of nuts at the main terminals, housing material, one-piece housing, mounting domes for driver assembly and spring slots	Original	PDF	SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1