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    SEMIX223GD12E4C Price and Stock

    SEMIKRON SEMIX223GD12E4C

    Igbt Module, Six, 1.2Kv, 333A; Continuous Collector Current:333A; Collector Emitter Saturation Voltage:1.85V; Power Dissipation:-; Operating Temperature Max:125°C; Igbt Termination:Press Fit; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Semikron SEMIX223GD12E4C
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SEMIX223GD12E4C Bulk 2
    • 1 $1110.44
    • 10 $1079.38
    • 100 $1017.25
    • 1000 $1017.25
    • 10000 $1017.25
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    SEMIKRON SEMIX223GD12E4C 27890208

    Module: IGBT; transistor/transistor; IGBT three-phase bridge
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SEMIX223GD12E4C 27890208 1
    • 1 $1237.83
    • 10 $915.37
    • 100 $849.84
    • 1000 $849.84
    • 10000 $849.84
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    SEMIX223GD12E4C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SEMiX223GD12E4c Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 333 A Tc = 80 °C 256 A 225 A ICnom ICRM SEMiX 33c Trench IGBT Modules SEMiX223GD12E4c VGES tpsc Tj ICRM = 3xICnom VCC = 800 V


    Original     		PDF SEMiX223GD12E4c E63532

    Untitled

    Abstract: No abstract text available
    Text: SEMiX223GD12E4c Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 333 A Tc = 80 °C 256 A 225 A ICnom ICRM SEMiX 33c Trench IGBT Modules ICRM = 3xICnom 675 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C


    Original     		PDF SEMiX223GD12E4c E63532

    SEMIX223GD12E4C

    Abstract: C1161A c1161 BY 225 diode
    Text: SEMiX223GD12E4c Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 333 A Tc = 80 °C 256 A 225 A ICnom ICRM SEMiX 33c Trench IGBT Modules ICRM = 3xICnom 675 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C


    Original     		PDF SEMiX223GD12E4c E63532 SEMIX223GD12E4C C1161A c1161 BY 225 diode

    Untitled

    Abstract: No abstract text available
    Text: SEMiX223GD12E4c Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 333 A Tc = 80 °C 256 A 225 A ICnom ICRM SEMiX 33c Trench IGBT Modules ICRM = 3xICnom 675 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C


    Original     		PDF SEMiX223GD12E4c E63532 3xIF3GD12E4c

    SEMIX353GB126V1

    Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1
    Text: Product Change Notification product group: SEMiX no.: 09-039 Change of SEMiX housing subject of change: change of SEMiX housing, namely form of nuts at the main terminals, housing material, one-piece housing, mounting domes for driver assembly and spring slots


    Original     		PDF SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1