Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SEMIX151GB Search Results

    SF Impression Pixel

    SEMIX151GB Price and Stock

    SEMIKRON SEMIX151GB12VS

    Igbt, Module, 1.2Kv, 231A; Continuous Collector Current:231A; Collector Emitter Saturation Voltage:1.75V; Power Dissipation:-; Operating Temperature Max:175°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Semikron SEMIX151GB12VS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SEMIX151GB12VS Bulk 8
    • 1 -
    • 10 $93.71
    • 100 $93.71
    • 1000 $93.71
    • 10000 $93.71
    Buy Now

    SEMIKRON SEMIX151GB17E4S

    Semix151Gb17E4S |Semikron SEMIX151GB17E4S
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SEMIX151GB17E4S Bulk 8
    • 1 -
    • 10 $98.78
    • 100 $90.31
    • 1000 $90.31
    • 10000 $90.31
    Buy Now

    SEMIKRON SEMIX151GB12E4S

    Igbt Module, Dual, 1.2Kv, 232A; Continuous Collector Current:232A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:-; Operating Temperature Max:125°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Semikron SEMIX151GB12E4S
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SEMIX151GB12E4S Bulk 8
    • 1 -
    • 10 $77.17
    • 100 $77.17
    • 1000 $77.17
    • 10000 $77.17
    Buy Now
    RS SEMIX151GB12E4S Bulk 1
    • 1 $312.2
    • 10 $277.86
    • 100 $277.86
    • 1000 $277.86
    • 10000 $277.86
    Get Quote
    ComSIT USA SEMIX151GB12E4S 40
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote

    SEMIKRON SEMIX151GB17E4S 27892100

    Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SEMIX151GB17E4S 27892100 1
    • 1 $297.51
    • 10 $219.54
    • 100 $204.15
    • 1000 $204.15
    • 10000 $204.15
    Get Quote

    SEMIKRON SEMIX151GB12E4S 27890100

    Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SEMIX151GB12E4S 27890100 1
    • 1 $245.19
    • 10 $180.56
    • 100 $167.22
    • 1000 $167.22
    • 10000 $167.22
    Get Quote

    SEMIX151GB Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SEMIX151GB12T4S Semikron Trench IGBT Modules Original PDF

    SEMIX151GB Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMiX151GB12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 232 A Tc = 80°C 179 A 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 189 A Tc = 80°C 141 A 450 A -40 . 175 °C ICRM = 3xICnom VGES


    Original
    SEMiX151GB12T4s PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMiX151GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMiX 1s Trench IGBT Modules SEMiX151GB12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V


    Original
    SEMiX151GB12E4s E63532 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMiX151GB12Vs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 231 A Tc = 80 °C 176 A 150 A ICnom ICRM SEMiX 1s ICRM = 3xICnom 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 189 A Tc = 80 °C


    Original
    SEMiX151GB12Vs E63532 PDF

    SEMiX151GB12E4s

    Abstract: No abstract text available
    Text: SEMiX151GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMiX 1s Trench IGBT Modules ICRM = 3xICnom 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C


    Original
    SEMiX151GB12E4s E63532 SEMiX151GB12E4s PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMiX151GB12Vs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 231 A Tc = 80 °C 176 A 150 A ICnom ICRM SEMiX 1s VGES tpsc Tj ICRM = 3xICnom VCC = 720 V VGE ≤ 15 V VCES ≤ 1200 V 450 A -20 . 20


    Original
    SEMiX151GB12Vs SEMiX151GB12Vs E63532 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMiX151GB12Vs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 231 A Tc = 80 °C 176 A 150 A ICnom ICRM SEMiX 1s VGES tpsc Tj ICRM = 3xICnom VCC = 720 V VGE ≤ 15 V VCES ≤ 1200 V 450 A -20 . 20


    Original
    SEMiX151GB12Vs SEMiX151GB12Vs E63532 PDF

    TF42

    Abstract: semix151gb
    Text: SEMiX151GB12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMiX 1s tpsc Trench IGBT Modules ICRM = 3xICnom 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C


    Original
    SEMiX151GB12T4s E63532 TF42 semix151gb PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMiX151GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMiX 1s Trench IGBT Modules ICRM = 3xICnom 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C


    Original
    SEMiX151GB12E4s E63532 AppliMiX151GB12E4s PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMiX151GB12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 189 A Tc = 80 °C 141 A 450 A -40 . 175 °C ICRM = 3xICnom


    Original
    SEMiX151GB12T4s E63532 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMiX151GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMiX 1s Trench IGBT Modules SEMiX151GB12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V


    Original
    SEMiX151GB12E4s SEMiX151GB12E4s E63532 PDF

    SEMIX151GB12E4S

    Abstract: No abstract text available
    Text: SEMiX151GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMiX 1s Trench IGBT Modules ICRM = 3xICnom 450 A -20 . 20 V 10 µs -40 . 175 °C


    Original
    SEMiX151GB12E4s E63532 SEMIX151GB12E4S PDF

    SEMIX353GB126V1

    Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1
    Text: Product Change Notification product group: SEMiX no.: 09-039 Change of SEMiX housing subject of change: change of SEMiX housing, namely form of nuts at the main terminals, housing material, one-piece housing, mounting domes for driver assembly and spring slots


    Original
    SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1 PDF