Untitled
Abstract: No abstract text available
Text: SEMiX151GAR12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 232 A Tc = 80°C 179 A 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 189 A Tc = 80°C 141 A 450 A -40 . 175 °C Tc = 25°C 189
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SEMiX151GAR12T4s
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Untitled
Abstract: No abstract text available
Text: SEMiX151GAL12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 232 A Tc = 80°C 179 A 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 189 A Tc = 80°C 141 A 450 A -40 . 175 °C Tc = 25°C 189
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SEMiX151GAL12T4s
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semikron IGBT 150A 600v
Abstract: No abstract text available
Text: SEMiX152GB12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 229 A Tc = 80°C 177 A 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 195 A Tc = 80°C 146 A 450 A -40 . 175 °C ICRM = 3xICnom VGES
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SEMiX152GB12T4s
SEMiX152GB12T4s
E63532
semikron IGBT 150A 600v
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Untitled
Abstract: No abstract text available
Text: SEMiX151GD12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 232 A Tc = 80°C 179 A 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 189 A Tc = 80°C 141 A 450 A -40 . 175 °C ICRM = 3xICnom VGES
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SEMiX151GD12T4s
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Untitled
Abstract: No abstract text available
Text: SEMiX151GB12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 232 A Tc = 80°C 179 A 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 189 A Tc = 80°C 141 A 450 A -40 . 175 °C ICRM = 3xICnom VGES
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SEMiX151GB12T4s
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Untitled
Abstract: No abstract text available
Text: SEMiX302GB128Ds Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 283 A Tc = 80°C 201 A 300 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 231 A Tc = 80°C 159 A ICRM = 2xICnom VGES SEMiX 2s SPT IGBT Modules
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SEMiX302GB128Ds
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Untitled
Abstract: No abstract text available
Text: SEMiX251GD126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 242 A Tc = 80°C 170 A 300 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 207 A Tc = 80°C 143 A ICRM = 2xICnom VGES SEMiX 13 Trench IGBT Modules
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SEMiX251GD126HDs
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Untitled
Abstract: No abstract text available
Text: SEMiX252GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 242 A Tc = 80°C 170 A 300 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 228 A Tc = 80°C 158 A ICRM = 2xICnom VGES SEMiX 2s Trench IGBT Modules
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SEMiX252GB126HDs
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Untitled
Abstract: No abstract text available
Text: SEMiX151GD066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 600 V Tc = 25°C 201 A Tc = 80°C 152 A 300 A -20 . 20 V 6 µs -40 . 175 °C Tc = 25°C 219 A Tc = 80°C 161 A A ICRM = 2xICnom VGES SEMiX 13 Trench IGBT Modules
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SEMiX151GD066HDs
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453gb12e4s
Abstract: SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c
Text: Application Note AN-9001 Revision: 01 Issue Date: 2009-03-01 Prepared by: Dr. Arendt Wintrich Key Words: IGBT, Trench4, Switching Behaviour, Cross Reference IGBT4 and free wheeling diode CAL4 in IGBT modules General properties . 1
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AN-9001
453gb12e4s
SEMIX 71GD12E4S
300gb12e4
igbt cross-reference
SKM200GB128D
SEMiX 202GB12E4s
SEMiX453GB12E4
101GD12E4s
IGBT cross reference semikron
303GD12E4-c
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M200G128
Abstract: No abstract text available
Text: SKM 200 GB 128 D Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C
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M200G128
XLS-13
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semikron IGBT 150A 600v
Abstract: No abstract text available
Text: SKM 200 GB 128 D Absolute Maximum Ratings T case = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C I CRM Tcase = 25 (80) °C, tp =1 ms VGES T vj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode I FAV = – I C Tcase = 25 (80) °C
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T\datbl\B06-ig
bt\200
gb128d
semikron IGBT 150A 600v
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skm 195 gb 125 dn
Abstract: No abstract text available
Text: SKM 195 GB 126 DN Absolute Maximum Ratings T case = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C I CRM Tcase = 25 (80) °C, tp =1 ms VGES T vj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode I FAV = – I C Tcase = 25 (80) °C
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M195GB126DN
skm 195 gb 125 dn
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skm 195 gb 125 dn
Abstract: M195GB126DN
Text: SKM 195 GB 126 DN Absolute Maximum Ratings T case = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C I CRM Tcase = 25 (80) °C, tp =1 ms VGES T vj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode I FAV = – I C Tcase = 25 (80) °C
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M195GB126DN
skm 195 gb 125 dn
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SemiSel
Abstract: SK chopper transformer SKIIP DRIVER skiip gb 120 232GDL120-410CTV
Text: SKiiP 232GDL120-410CTV I. Power section 3 phase bridge Ts = 25°C unless otherwise specified Absolute maximum ratings Symbol Conditions Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM
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232GDL120-410CTV
SemiSel
SK chopper transformer
SKIIP DRIVER
skiip gb 120
232GDL120-410CTV
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semikron skiip 20
Abstract: 132Gd SemiSel SK chopper transformer 132GDL120-412CTV 7pack igbt module
Text: SKiiP 132GDL120-412CTV I. Power section brake chopper Ts = 25°C unless otherwise specified Absolute maximum ratings Symbol Conditions Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin
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132GDL120-412CTV
semikron skiip 20
132Gd
SemiSel
SK chopper transformer
132GDL120-412CTV
7pack igbt module
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232GD120-313CTV
Abstract: No abstract text available
Text: SKiiP 232GD120-313CTV I. Power section Absolute maximum ratings Symbol Ts = 25°C unless otherwise specified Conditions Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin
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232GD120-313CTV
10high
232GD120-313CTV
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132GH120-212CTV
Abstract: No abstract text available
Text: SKiiP 132GH120-212CTV I. Power section Absolute maximum ratings Symbol Ts = 25°C unless otherwise specified Conditions Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin
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132GH120-212CTV
132GH120-212CTV
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132GD120-318CTV
Abstract: semikron skiip 20 132-gd120 IC-125A semikron IGBT 150A 600v
Text: SKiiP 132GD120-318CTV I. Power section Absolute maximum ratings Symbol Ts = 25°C unless otherwise specified Conditions Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin
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132GD120-318CTV
132GD120-318CTV
semikron skiip 20
132-gd120
IC-125A
semikron IGBT 150A 600v
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semikron IGBT 150A 600v
Abstract: 232GH120-210CTV
Text: SKiiP 232GH120-210CTV I. Power section Absolute maximum ratings Symbol Ts = 25°C unless otherwise specified Conditions Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin
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232GH120-210CTV
10high
semikron IGBT 150A 600v
232GH120-210CTV
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232GDL120-410CTV
Abstract: skiip 24
Text: SKiiP 232GDL120-410CTV I. Power section 3 phase bridge Ts = 25°C unless otherwise specified Absolute maximum ratings Symbol Conditions Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM
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232GDL120-410CTV
232GDL120-410CTV
skiip 24
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tyco igbt module 25A
Abstract: tyco igbt module 25A 1200V tyco igbt module 15A tyco igbt module 35A V23990-P600-I19-PM p719 flowPACK tyco igbt module 35A 1200V MiniSKiiP IPM AC 126
Text: Power Modules Standard Power Module Solutions Vincotech is one of the market leaders in Power Modules.Target applications include motor drives, power supplies and welding equipment.With 13 different standard housings and more than 35 standard product families, Vincotech offers a wide power range
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Vincotech-011-0508
ISO9001
TS16949
tyco igbt module 25A
tyco igbt module 25A 1200V
tyco igbt module 15A
tyco igbt module 35A
V23990-P600-I19-PM
p719
flowPACK
tyco igbt module 35A 1200V
MiniSKiiP IPM
AC 126
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CALCULATION SemiSel 3.1
Abstract: semikron skiip3 DIN 5463 usage of skiip CALCULATION SemiSel skiip gb 120 semikron skiip vf group semikron skiip 81 AN 15 T B DIN 5463 semikron IGBT, 1200V, 600A, H bridge
Text: Usage of SKiiP Systems 10. Dezember 2002 Seite: 1 von: 16 Usage of SKiiP Systems SEMIKRON integrated intelligent Power 1 2 3 4 Main features of SKiiP2 and SKiiP3 Systems . 2
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SM/5/FO/000/006/Rev00/25
V020627
CALCULATION SemiSel 3.1
semikron skiip3
DIN 5463
usage of skiip
CALCULATION SemiSel
skiip gb 120
semikron skiip vf group
semikron skiip 81 AN 15 T
B DIN 5463
semikron IGBT, 1200V, 600A, H bridge
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IGBT SKM 400 GA 122D SEMIKRON
Abstract: Si 122D semikron IGBT 150A 600v GA122 102D 122D V00E
Text: 013bb71 □□□3bcm S 1E D - . SEMIKRON INC Absolute Maximum Ratings Symbol Conditions ' Values . 1 0 2 D . 1 2 2 D Units 1000 1200 V 1000 1200 V V ces 20 kn V cgr Rge lc Tease = 2 5 /8 0 °C 2 0 0 /1 5 0 Ic m Tease = 2 5 /8 0 °C 4 0 0 /3 0 0
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13bb71
0DD37G1
T-39-31
SKM200
IGBT SKM 400 GA 122D SEMIKRON
Si 122D
semikron IGBT 150A 600v
GA122
102D
122D
V00E
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