SEMEFAB Search Results

g171

Abstract: BUL47B semefab G971A BUL46A BUL46B BUL47A G271A G871A G871DE
Contextual Info: 4AE D • 6133167 □□ □□ 41 4 SENELAB LTD M DISTRIBUTED BASE TECHNOLOGY DIE DESIGNED AND DIFFUSED BY SEMEFAB ' - G171 chip family The G 171 chip family is an NPN bipolar multiepitaxial planar transistor using SEMEFAB’S new ADVANCED DISTRIBUTED BASE TECHNOLOGY

G872A

Abstract: G672A semefab BUL48B BUL49A BUL49B G172 G272A G372A G572A
Contextual Info: Ô1331Ô7 ODODHIS 3TH « SM l- B MÛE D SEM EFABI SEMELAB LTD DIFFUSION DISTRIBUTED BASE TECHNOLOGY DIE DESIGNED AND DIFFUSED BY SEMEFAB G172 chip family The G172 chip family is an NPN bipolar multiepitaxial planar transistor using SEMEFAB’S new ADVANCED DISTRIBUTED BASE TECHNOLOGY

Contextual Info: BUZ907DP BUZ908DP MAGNA TEC MECHANICAL DATA Dimensions in mm 20.0 P–CHANNEL POWER MOSFET 5.0 3.3 Dia. POWER MOSFETS FOR AUDIO APPLICATIONS 1 2 FEATURES 3 • HIGH SPEED SWITCHING 2.0 2.0 1.0 • SEMEFAB DESIGNED AND DIFFUSED 3.4 • HIGH VOLTAGE 220V & 250V

semefab

Contextual Info: Semefab Wafer Fabrication Sem efab sem iconductor design and w afer fabrication Semefab is Semelab Group’s wafer fabrication facility, based in Glenrothes, Fife. As a relativ ely small b usiness, we are completely flexible. W hether you have a foundry or a custom silicon requirem ent, we work with

HITACHI 2SJ56 TO-3 AMP 200V 125W MOSFET

Abstract: 2SJ56 2sk176 mosfet cross reference 2sk135 audio application lateral mosfet audio amplifier BUZ901P 2sJ50 mosfet hitachi mosfet power amplifier audio application BUZ900P BUZ900D
Contextual Info: M A G IMA r^ T E C BUZ 900D BUZ 9 0 1 D NEW PRODUCT SILICON N-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIG H POWER AMPLIFIER APPLICATION FEATURES HIGH SPEED SW ITCHING N - CHANNEL POWER MOSFET SEMEFAB DESIG NED AND DIFFUSED

MIL npn high voltage transistor 500V

Contextual Info: Mil = ^ = INI BUL52AFI SEME LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 Designed for use in electronic ballast applications 3.6 Dia. • SEMEFAB DESIGNED AND DIFFUSED DIE 1 2 3

Contextual Info: INI = ^ = M il SEME BUL74B LAB MECHANICAL DATA Dimensions in mm 10.2 4.5 1.3 ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 3.6 Dia. Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE

Contextual Info: Mil =X= mi SEME BUL65A LAB MECHANICAL DATA Dimensions in mm 2 .1 8 0 .086 ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE • HIGH VOLTAGE

buz901 buz906

Abstract: BUZ905 magnatec mosfets BUZ901 BUZ906
Contextual Info: BUZ905 BUZ906 IV I A CB INI A MECHANICAL DATA P-CHANNEL POWER MOSFET Dim ensions in mm POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • P-CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE 160V & 200V • HIGH ENERGY RATING

buz906dp

Contextual Info: BUZ905DP BUZ906DP M ECHANICAL DATA Dimensions in mm P-CHANNEL POWER MOSFET 5 .C POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • P-CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE 160V & 200V) • HIGH ENERGY RATING

30D40

Contextual Info: BUZ900 BUZ901 IV I A CB INI A MECHANICAL DATA Dimensions in mm N-CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • N-CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE 160V & 200V • HIGH ENERGY RATING

BUZ902DP

Contextual Info: X BUZ902DP BUZ903DP IV I A O INI A MECHANICAL DATA Dimensions in mm N-CHANNEL POWER MOSFET 5.C POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE 220V & 250V) • HIGH ENERGY RATING 0.6

Contextual Info: INI INI SEME BUL54BFI LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 t* - * \ à 3.6 Dia. Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE

NPN Transistor 600V 0,2A

Contextual Info: Mil = ^ = INI BUL55A SEME LAB MECHANICAL DATA Dimensions in mm 4.5 10.2 , f*-► f*-1.3 ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 3.6 Dia. Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE

semefab

Abstract: TRANSISTOR ARRAY semefab+051
Contextual Info: PPS 171 Analogue Transistor Array Process Preview Datasheet Rev 1.0 July 2000 Description The Semefab PPS171 Analogue Transistor Array process is available on a foundry basis and is qualified for use with the 700 Series Linear Bipolar Semicustom Arrays from Array Design.

til 701

Abstract: photodiode die WAFER MAGNATEC LATERAL MOSFET magnatec mosfets depletion mode mosfet 100 MHz semefab Power MOSFET Wafer pps 501 semelab mosfet lateral
Contextual Info: til// 'rr* 'WWr Semefab SILICON DESIGN — WAFER FABRICATION SEMEFAB SCOTLAND LTD. is the Group's wafer fabrication facility based in Glenrothes, Fife. Located adjacent to Compugraphics, Europe's largest independent mask manufacturer, SEMEFAB has a capacity of

Contextual Info: BUP50A MECHANICAL DATA Dimensions in mm NPN MULTI-EPITAXIAL VERY FAST SWITCHING HIGH POWER TRANSISTOR 25.4 1.0 10.92 (0.430) 1.57 (0.062) FEATURES • DIFFUSED BY SEMEFAB • VERY LOW VCE(sat) • VERY FAST SWITCHING 30.1 5 (1.187) • HIGH SWITCHING CURRENTS

SEM-E

Abstract: transistor VCE 1000V to220 01455 NPN Transistor VCEO 1000V vce 500v NPN Transistor BUL52AFI transistor 500v 0.5a
Contextual Info: SEME BUL52AFI LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 6.3 10.2 Designed for use in electronic ballast applications 15.1 3.6 Dia. • • • • 1 2 3 14.0 1.3 0.85 SEMEFAB DESIGNED AND DIFFUSED DIE

BUZ900P

Abstract: L01A BUZ901P 8uz90 BUZ901 BUZ905P BUZ906P
Contextual Info: <\ BUZ900P BUZ901P IIVI/VGIMA 't e c MECHANICAL DATA N-CHANNEL POWER MOSFET Dimensions in mm inches 1 5 .4 9 (0 6 1 0 ) 16 2 6 (0 6 4 0 ) POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • N-CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED

BUL58BSMD

Abstract: 028W
Contextual Info: BUL58BSMD MECHANICAL DATA Dimensions in mm 3 .6 0 0 .1 4 2 M a x . • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE • FAST SWITCHING • HIGH ENERGY RATING 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 )

BUP50A

Abstract: BUP50 IC 1165
Contextual Info: BUP50A MECHANICAL DATA Dimensions in mm NPN MULTI-EPITAXIAL VERY FAST SWITCHING HIGH POWER TRANSISTOR 25.4 1.0 10.92 (0.430) 1.57 (0.062) FEATURES • DIFFUSED BY SEMEFAB • VERY LOW VCE(sat) • VERY FAST SWITCHING 30.15 (1.187) • HIGH SWITCHING CURRENTS

BUZ907DP

Abstract: BUZ902DP 250v 16a 250w mosfet BUZ903DP BUZ908DP Magnatec p-channel 250V 16A power mosfet p-channel 250V power mosfet
Contextual Info: BUZ907DP BUZ908DP MAGNA TEC MECHANICAL DATA Dimensions in mm 20.0 P–CHANNEL POWER MOSFET 5.0 3.3 Dia. POWER MOSFETS FOR AUDIO APPLICATIONS 1 2 FEATURES 3 • HIGH SPEED SWITCHING 2.0 2.0 1.0 • SEMEFAB DESIGNED AND DIFFUSED 3.4 • HIGH VOLTAGE 220V & 250V

G675A

Abstract: BUL53A BUL53B G175 G275A G375A G575A G875A G875DE G975A
Contextual Info: 46E T> m 6 1 3 3 1 6 7 DDDDHlb 5 3 0 • S f l L B DIFFUSION SEMEFABI S E H E L A B DISTRIBUTED BASE TECHNOLOGY DIE DESIGNED AND DIFFUSED BY SEMEFAB "P G175 chip family J LTD * Z S 'V l The G 175 chip family is an NPN bipolar multiepitaxial planar transistor using SEMEFAB’S new

npn triple diffused transistor 500v 8a

Contextual Info: Mil =X= mi SEME BUL65B LAB MECHANICAL DATA Dimensions in mm 2 .1 8 0 .086 ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE • HIGH VOLTAGE