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    SE 115N Search Results

    SE 115N Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    TK115N65Z5 Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 650 V, 24 A, 0.115 Ω@10 V, High-speed diode, TO-247 Visit Toshiba Electronic Devices & Storage Corporation
    R4F20115NFA#U0 Renesas Electronics Corporation Microcontrollers with Ease-of-Use and Reduced CPU Processing Load Features (Non Promotion), LQFP, /Tape Visit Renesas Electronics Corporation
    R4F20115NFB#U0 Renesas Electronics Corporation Microcontrollers with Ease-of-Use and Reduced CPU Processing Load Features (Non Promotion) Visit Renesas Electronics Corporation
    SN75115NE4 Texas Instruments Dual Differential Line Receiver 16-PDIP 0 to 70 Visit Texas Instruments Buy
    SF Impression Pixel

    SE 115N Price and Stock

    Sanken Electric Co Ltd SE115N

    SPECIALTY ANALOG CIRCUIT, PZFM3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components SE115N 139
    • 1 $2.25
    • 10 $2.25
    • 100 $1.35
    • 1000 $1.215
    • 10000 $1.215
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    SAN SE115N

    Electronic Component
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA SE115N 880
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    SE 115N Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SE115N Sanken Electric Error Amplifier IC Original PDF
    SE115N Sanken Electric Error Amplifier ICs Original PDF
    SE115N-T Allegro MicroSystems IC ERROR AMPLIFIER ICS Original PDF

    SE 115N Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SE 130N

    Abstract: datasheet se 110n SE005N se 115n se 135n 1-30N 070N datasheet SE 125N SE 135 015N
    Text: •Error Amplifier ICs SE series Absolute Maximum Ratings (Ta=25°C) Part No. Collector-Ground Voltage Collector Current VCGO (V) Ic (mA) SE005N Operating Temperature TOP (°C) 12 Electrical Characteristics (Ta=25°C) Output Detection Voltage VS (V) Remarks


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    SE005N SE 130N datasheet se 110n SE005N se 115n se 135n 1-30N 070N datasheet SE 125N SE 135 015N PDF

    2.2K resistor

    Abstract: cha 9935 grayhill relay 70 metal detector using 555 timer panasonic 614 battery panasonic EEU capacitor series date codes RLink schematic 74C04 GR-1089-CORE LE79R79
    Text: Le71HE0040J Le79R79/R100/R101 Evaluation Board User’s Guide Revision F, Version 2 October 2, 2007 Document Number: 080255 For more information about all Zarlink products visit our Web Site at www.zarlink.com Information re lating to p roducts a nd services f urnished herein by Z arlink Se miconductor I nc. or i ts su bsidiaries c ollectively “Zarlink” is b elieved t o be rel iable.


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    Le71HE0040J Le79R79/R100/R101 S2PHF6652 ERO-S2PHF7153 ERO-S2PHF4222 ERO-S2PHF4992 ERO-S2PHF1502 C330C105K5R5CA C062K824K5X5CA C317C103K5R5CA 2.2K resistor cha 9935 grayhill relay 70 metal detector using 555 timer panasonic 614 battery panasonic EEU capacitor series date codes RLink schematic 74C04 GR-1089-CORE LE79R79 PDF

    ha 1457 w

    Abstract: MAGNETICA neodymium magnet HA 1166
    Text: LOW FREQUENCY.FH8 Fri Apr 19 14:48:33 2002 Pagina 2 115Nd/W -Pro- LOW FREQUENCY This 15" long excursion, lightweight bass loudspeaker has been specifically designed to deliver high impact bass response, with exceptional high power handling capacity 400w RMS . The magnet structure incorporates a powerful neodymium magnet, reducing the total mass of the unit to


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    115Nd/W ha 1457 w MAGNETICA neodymium magnet HA 1166 PDF

    18G400

    Abstract: subwoofer 600w 10G200 resistencia hilo bobinado 12K200 12LX60 15G400 15K200 15LX60 18G50
    Text: LOW FREQUENCY.FH8 Fri Apr 19 14:48:33 2002 Pagina 1 21L50 -Pro- LOW FREQUENCY This 21" bass loudspeaker has been specifically designed to deliver high impact bass response, with exceptional high power handling capacity. It incorporates an edgewound copper ribbon voice coil 4"_ diameter and powerful, vented magnet structure. The result is an incredibly highly


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    21L50 18G400 subwoofer 600w 10G200 resistencia hilo bobinado 12K200 12LX60 15G400 15K200 15LX60 18G50 PDF

    LFX125B-03F256C

    Abstract: LFX1200EB-04F900I pin out lfx1200eb-04f900i LFX1200EB LFX125B-03FN256C LFX125EB-05F256C LFX125B-04F256C LFX125B-05FN256C LFX125B-03F516C LFX500EB
    Text: ispXPGA Device Datasheet June 2010 Select Devices Discontinued! Product Change Notifications PCNs have been issued to discontinue select devices in this data sheet. The original datasheet pages have not been modified and do not reflect those changes. Please refer to the table below for reference PCN and current product status.


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    LFX125B LFX125C LFX200B LFX200C LFX125B-03F256C LFX125B-03FN256C LFX125B-04F256C LFX125B-04FN256C LFX125B-05F256C LFX125B-05FN256C LFX125B-03F256C LFX1200EB-04F900I pin out lfx1200eb-04f900i LFX1200EB LFX125B-03FN256C LFX125EB-05F256C LFX125B-04F256C LFX125B-05FN256C LFX125B-03F516C LFX500EB PDF

    lx64ev-3f100c

    Abstract: LX64V-3F100C 3F100 5f208c LX64V-3FN100 LX64EB-5F100C LX128EV-5FN208I LX128EV-5FN208C LX64B-3FN100C LX64B-5F100C
    Text: ispGDX2 Device Datasheet June 2010 Select Devices Discontinued! Product Change Notifications PCNs #09-10 has been issued to discontinue select devices in this data sheet. The original datasheet pages have not been modified and do not reflect those changes.


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    LX64V LC64B LX64C LX128V LX128B LX128C LX256V LX256B LX64V-3F100C LX64V-3FN100C lx64ev-3f100c LX64V-3F100C 3F100 5f208c LX64V-3FN100 LX64EB-5F100C LX128EV-5FN208I LX128EV-5FN208C LX64B-3FN100C LX64B-5F100C PDF

    LC5512MV-45FN256C

    Abstract: LC5256MV-4F256C LC5256MV-4FN256C LC5256MV-5F256C LC5256MV-5F256I LC5256MV-5FN256C LC5256MV-5FN256I LC5256MV-75F256C LC5256MV-75F256I LC5256MV-75FN256C
    Text: ispXPLD 5000MX Device Datasheet June 2010 Select Devices Discontinued! Product Change Notifications PCNs #09-10 has been issued to discontinue select devices in this data sheet. The original datasheet pages have not been modified and do not reflect those changes.


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    5000MX LC5256MV LC5256MB LC5256MC LC5256MV-4F256C LC5256MV-4FN256C LC5256MV-5F256C LC5256MV-5FN256C LC5256MV-75F256C LC5256MV-75FN256C LC5512MV-45FN256C LC5256MV-4F256C LC5256MV-4FN256C LC5256MV-5F256C LC5256MV-5F256I LC5256MV-5FN256C LC5256MV-5FN256I LC5256MV-75F256C LC5256MV-75F256I LC5256MV-75FN256C PDF

    A2918SW

    Abstract: SLA7020M SMA7029M diode ry 10 A SE005N 2-Phase Stepper Motor Driver sla7021m
    Text: Error Amplifier ICs SE series Absolute Maximurrr Ratings TjfpeM o ^óflw ^or-Q round VoSage Collector Current V kso(V) lo(mA) SE 005N Electrical Characteristics Ta«-25'C * Operating Temperature T o p (C : 1 Remarks Output Defection VòRage V-(V> 12 5 .0 ± 0.1


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    SDK03M A2918SW 7230M SI-7502 SLA5011) SLA6503Ì SLA18Pm 20Pin 27Pin SLA7020M SMA7029M diode ry 10 A SE005N 2-Phase Stepper Motor Driver sla7021m PDF

    DIODES marking 2a1

    Abstract: 1N3064 500KHZ WaCS
    Text: SG55236/SG55236A 5IL1D3N LINEAR INTEG RATED C IR C U ITS DUAL SEN SE AMPLIFIER/DATA REGISTERS D E S C R IP T IO N FEATURES The SG55236/SG55236A is a monolithic, dual channel, high speed sense amplifier with independently controlled data registers. The input section


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    SG55236/SG55236A SG55236/SG55236A SG55236A SG55236: SG55236A: 24-PIN SG55236AF/883B SG55236AF SG55236F/883B SG55236F DIODES marking 2a1 1N3064 500KHZ WaCS PDF

    "Digital Delay Line"

    Abstract: 100NS 25NS 40NS 55NS 0451008
    Text: BEL FUSE INC ^ ¿ Ë | 1351453 0000442 T | T-V7-/7 /defining a degree of excellence DIGITAL DELAY LINE SE R IE S 0451 ECL 10K PROGRAMMABLE LOGIC DELAY MODULE 4 BIT TECHNICAL INFORMATION TEST CONDITIONS Logic 1 — 0.9 Volts Logic O -1 .8 Volts Rise Time 20% to 8 0 % 2.0 Nsec


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    Characterist40-04 100NS 115NS 130NS 145NS 160NS 432-0463/TWX "Digital Delay Line" 25NS 40NS 55NS 0451008 PDF

    TC51832A

    Abstract: 256X128X8 TC51832AP 1832A
    Text: TOSHIBA TC51832AP/ASP/AF-70/85/10 TC51832APL/ASPL/AFL-70/85/10 SILICON GATE CMOS 32,768 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The T C 5 1832 A P is a 2 5 6 K bit high speed C M O S p se udo static RAM organized as 3 2 ,7 6 8 w o rd s by 8 bits. The TC 51832A P utilizes


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    TC51832AP/ASP/AF-70/85/10 TC51832APL/ASPL/AFL-70/85/10 1832A mAP/ASP/AF-70/85/10 TC51832APL/ASPL/AFL-70/85/10 TC51832A 256X128X8 TC51832AP PDF

    TC518512

    Abstract: transistor dk qq
    Text: TOSHIBA TC518512PiyFiyFn/niL-70 DR /80(DK)/10(DK) SILICON GATE CMOS 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description T h e T C 5 1 8 5 1 2 P L is a 4 M bit high speed C M O S p se udo static RAM organized as 52 4,28 8 w o rd s by 8 bits. The TC 5 1851 2P L utilizes


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    TC518512PiyFiyFn/niL-70 D-182 TC518512PL/FL/FTL/TRL-70 D-183 TC518512 transistor dk qq PDF

    2SK1796

    Abstract: 2SK1804 2SK1713 2SK1784 2SK1794 2SK1772 2SK1773 2SK1774 2SK1775 2SK1785
    Text: - 122 - f m £ tt ffl £ æ m i \ V * * K V js * m * Se 3 Vg s * X I* X P d /P c h (V) * * (A) a * (W) I gss (max) (A) Vg s (V) Ä (min) (max) Vd s (A) (V) (A) ft ft ä t ff) (max) V d s (V) (V) (V) (Ta=25tî) 1 Í S m (min) (S) Id (A) Vd s % ? (V) Id


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    2SK1772 2SK1773 2SK1774 2SK1775 2SK1784 30nstyp 2SK183S 25nstyp 2SK1834 105ns 2SK1796 2SK1804 2SK1713 2SK1794 2SK1785 PDF

    TC518512

    Abstract: LT/SG3527A
    Text: TOSHIBA T C 5 1 8 5 1 2 P iy F L /F T L A R L - 7 0 L 'I /8 0 ( L T ) /1 0 q _ ,'I) SILICON GATE CMOS 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description T h e T C 5 1 8 5 1 2 P L is a 4 M bit high speed C M O S p se udo static RAM organized as 5 2 4,28 8 w o rd s by 8 bits. The T C 5 1 85 12P L utilizes


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    D-173 TC518512PL/FL/FTL/TRL-70 D-174 TC518512 LT/SG3527A PDF

    TC518128CFL

    Abstract: No abstract text available
    Text: INTEGRATED TOSHIBA TOSHIBA M O S DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC518128CFL/CFWL/CFTL-70V, -80V DATA SILICON GATE CM O S TENTATIVE 131,072 W O R D S X 8 BIT CM O S PSEUDO STATIC RAM DESCRIPTION The TC518128C-V Family is a 1M bit high speed CMOS Pseudo Static RAM organized as 131,072


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    TC518128CFL/CFWL/CFTL-70V, TC518128C-V int0270 TC518128CFL/ TC518128CFWL TC518128CFLâ TC518128CFL PDF

    feme a 001 24

    Abstract: IC338 feme EFCH EN470 DIP32 LC338128M LC33864M LC33864P lc3381
    Text: Ordering number : EN fcc4701 CMOS LSI LC33864P, M, PL, ML-70/80/10 i SA\YO 512 K 65536 words x 8 bits Pseudo-SRAM "S, Preliminary Overview Package D im ^ é lo n f”^ T he L C 33864 series is com posed o f pseudo static R A M unit: m m that operate on a single 5 V pow er supply and is organized


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    LC33864P, ML-70/80/10 LC33854 LC33864 32-pin C777777/////////////////777 I/01-1/0Ã feme a 001 24 IC338 feme EFCH EN470 DIP32 LC338128M LC33864M LC33864P lc3381 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN fcc4701 CMOS LSI LC33864P, M, PL, ML-70/80/10 i SA\YO 512 K 65536 words x 8 bits Pseudo-SRAM "S, Preliminary Overview Package D im ^ é lo n f”^ T he L C 33864 series is com posed o f pseudo static R A M unit: m m that operate on a single 5 V pow er supply and is organized


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    fcc4701 LC33864P, ML-70/80/10 V7777 PDF

    toshiba C366

    Abstract: toshiba C380
    Text: TOSHIBA TC524262 TC524265 t a r g e t s il ic o n g a t e c m o s 262,144 WORDS x 16 BITS MULTIPORT DRAM DESCRIPTION The TC524262/265 is a 4M bit CMOS multiport memory equipped with a 262,144-words by 16-bits dynamic random access memory RAM port and a 512-words by 16-bits static serial access memory (SAM)


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    TC524262 TC524265 TC524262/265 144-words 16-bits 512-words toshiba C366 toshiba C380 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC524262 TC524265 t a r g e t s il ic o n g a t e c m o s 262,144 WORDS x 16 BITS MULTIPORT DRAM DESCRIPTION The TC524262/265 is a 4M bit CM OS m ultiport m emory equipped with a 262,144-words by 16-bits dynam ic random access m emory RAM port and a 512-words by 16-bits static serial access m emory (SAM)


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    TC524262 TC524265 TC524262/265 144-words 16-bits 512-words 16-bits TC524262 PDF

    m925

    Abstract: TC514256BJ tc51256t
    Text: 262,144 WORDS x9 BIT DYNAMIC RAM PRELIMINARY MODULE DESCRIPTION The THM 92500BS is a 262,144 words by 9 bits dynamic RAM module which assembled 2 pcs of T C 514256BJ and lpcs of TC51256T on the printed circuit board. The THM 92500BS is optimized for application to the systems which are required high density and large capacity such a s main memory of


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    92500BS 514256BJ TC51256T 144words 115ns THM92500BS-60 THM92500BSG-60 m925 TC514256BJ PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA =10=17240 O D S M T M b 264 • T 0 S 2 TOSHIBA L 0 6 I C / M E M 0 R Y tR E SILICON GATE CMOS 262,144 WORDS x 16 BITS MULTIPORT DRAM TC524262 TC524265 D t a r g e t DESCRIPTION The TC524262/265 is a 4M bit CMOS multiport memory equipped with a 262,144-words by 16-bits


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    TC524262 TC524265 TC524262/265 144-words 16-bits 512-words 16-bits TC524262 PDF

    Untitled

    Abstract: No abstract text available
    Text: • DDBMñññ ÖSE ■ T O S E " . TOSHIBA LOGIC/riEMORY » TC524162 TC524165 b'iE SILICON GATE CMOS 262,144 WORDS x 16 BITS MULTIPORT DRAM t a r g e t DESCRIPTION The TC524162/165 is a 4M bit CMOS multiport memory equipped with a 262,144-words by 16-bits


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    TC524162 TC524165 TC524162/165 144-words 16-bits 512-words 16-bits PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC524162 TC524165 t a r g e t s il ic o n g a t e c m o s 262,144 WORDS x 16 BITS MULTIPORT DRAM DESCRIPTION The TC524162/I65 is a 4M bit CM OS multiport m em ory equipped with a 262,144-words by 16-bits dynam ic random access memory RAM port and a 512-words by 16-bits static serial access m em ory (SAM)


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    TC524162 TC524165 TC524162/I65 144-words 16-bits 512-words TC524162/165 C-352 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC524162 TC524165 t a r g e t s il ic o n g a t e c m o s 262,144 WORDS x 16 BITS MULTIPORT DRAM DESCRIPTION The TC524162/165 is a 4M bit CM OS m ultiport m em ory equipped with a 262,144-words by 16-bits dynam ic random access m emory RAM port and a 512-words by 16-bits static serial access m emory (SAM)


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    TC524162 TC524165 TC524162/165 144-words 16-bits 512-words 16-bits PDF