SDRAM VOLTAGE Search Results

K5W1G

Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
Contextual Info: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION

DDR2 x32

Abstract: ELPIDA DDR2 Datasheet Unbuffered DDR2 SDRAM DIMM DDR2 layout 84 FBGA outline DDR2 SDRAM "DDR2 SDRAM" 84 FBGA DDR2 DDR2 x16
Contextual Info: DDR2 SDRAM Feature Comparison of DDR2 SDRAM, DDR SDRAM and SDRAM Items Clock frequency Transfer data rate I/O width Prefetch bit width Clock input Burst length Data strobe Supply voltage Interface /CAS latency CL Read latency Write latency Additive latency (AL)

ELPIDA DDR technical note

Abstract: TSOP II elpida ELPIDA DDR User ELPIDA Elpida Memory Elpida DDR2 SDRAM component ELPIDA DDR manual ELPIDA SDRAM User Manual
Contextual Info: TECHNICAL NOTE FEATURE COMPARISON OF DDR2 SDRAM, DDR SDRAM and SDRAM CAUTION This document shows differences between DDR2 SDRAM, DDR SDRAM and SDRAM. For details about the functions and specifications, refer to the corresponding data sheet or user’s manual.

Contextual Info: DDR SDRAM 256Mb F-die x16 DDR SDRAM 256Mb F-die DDR400 SDRAM Specification Revision 1.0 Rev. 1.0 June. 2003 DDR SDRAM 256Mb F-die (x16) DDR SDRAM 256Mb F-die Revision History Revison 1.0 (June. 2003) 1. First release Rev. 1.0 June. 2003 DDR SDRAM DDR SDRAM 256Mb F-die (x16)

K4S561632E

Abstract: K4S560432E K4S560432E-TC K4S560832E
Contextual Info: SDRAM 256Mb E-die x4, x8, x16 CMOS SDRAM 256Mb E-die SDRAM Specification Revision 1.4 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.4 February 2004 SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM

K4S280432E

Abstract: K4S281632E TL 2262 decoder
Contextual Info: SDRAM 128Mb E-die x4, x8, x16 CMOS SDRAM 128Mb E-die SDRAM Specification Revision 1.4 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.4 February. 2004 SDRAM 128Mb E-die (x4, x8, x16) CMOS SDRAM

K4S643232H

Abstract: K4S643232
Contextual Info: SDRAM 64Mb H-die x32 CMOS SDRAM 64Mb H-die (x32) SDRAM Specification Revision 1.3 February 2004 *Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.3 February. 2004 SDRAM 64Mb H-die (x32) CMOS SDRAM Revision History

K4S280432F

Abstract: K4S281632F K4S281632F-TC
Contextual Info: SDRAM 128Mb F-die x4, x8, x16 CMOS SDRAM 128Mb F-die SDRAM Specification Revision 1.0 January. 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.0 January. 2004 SDRAM 128Mb F-die (x4, x8, x16) CMOS SDRAM

gm72v16821

Abstract: GMM2645233CTG gm72v16821ct
Contextual Info: LG Semicon SDRAM UNE-UP NOTE : * ; Comming Soors, f ; Under Development 11 LG Serntcon 2. SDRAM DIMM MODULE NOTE : * ; Comming Soon, f ; Under Development 12 SDRAM LINE-UP LG Semicon SDRAM LINE-UP SDRAM DIMM MODULE Contiuned NOTE : * ; Comming Soon, 1 1Under Development

tcl 14175

Abstract: 8MB SDRAM K4S641632H-TC K4S640432H-TC K4S640832H K4S641632H
Contextual Info: SDRAM 64Mb H-die x4, x8, x16 CMOS SDRAM 64Mb H-die SDRAM Specification Revision 1.4 November 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.4 November 2003 SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM

K8D3216UBC-pi07

Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Contextual Info: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM

Contextual Info: DDR SDRAM 256Mb E-die x4, x8 DDR SDRAM 256Mb E-die DDR SDRAM Specification Revision 1.0 Rev. 1.0 April. 2003 DDR SDRAM 256Mb E-die (x4, x8) DDR SDRAM 256Mb E-die Revision History Revision 1.0 (April, 2003) - First release. Rev. 1.0 April. 2003 DDR SDRAM 256Mb E-die (x4, x8)

Contextual Info: SDRAM 64Mb H-die x4, x8, x16 CMOS SDRAM 64Mb H-die SDRAM Specification Revision 1.0 September 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.0 September 2003 SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM

K4S280432F

Abstract: K4S281632F
Contextual Info: SDRAM 128Mb F-die x4, x8, x16 CMOS SDRAM 128Mb F-die SDRAM Specification Revision 1.1 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February 2004 SDRAM 128Mb F-die (x4, x8, x16) CMOS SDRAM

Contextual Info: 512Mb B-die DDR2 SDRAM DDR2 SDRAM 512Mb B-die DDR2 SDRAM Specification Version 1.2 January 2005 Page 1 of 29 Rev. 1.2 Jan. 2005 512Mb B-die DDR2 SDRAM DDR2 SDRAM Contents 0. Ordering Information 1. Key Feature 2. Package Pinout/Mechnical Dimension & Addressing

Contextual Info: 512Mb C-die DDR2 SDRAM DDR2 SDRAM 512Mb C-die DDR2 SDRAM Specification Version 1.1 March 2005 Page 1 of 29 Rev. 1.1 Mar. 2005 512Mb C-die DDR2 SDRAM DDR2 SDRAM Contents 0. Ordering Information 1. Key Feature 2. Package Pinout/Mechnical Dimension & Addressing

K4S161622H-TC60

Abstract: K4S161622H K4S161622H-TC55 K4S161622H-TC70 K4S161622H-TC80
Contextual Info: SDRAM 16Mb H-die x16 CMOS SDRAM 16Mb H-die SDRAM Specification Revision 1.5 August 2004 Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.5 August 2004 SDRAM 16Mb H-die(x16) CMOS SDRAM Revision History Revision 0.0 (May, 2003)

K4S280432E

Abstract: K4S281632E
Contextual Info: SDRAM 128Mb E-die x4, x8, x16 CMOS SDRAM 128Mb E-die SDRAM Specification Revision 1.2 May. 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 May. 2003 SDRAM 128Mb E-die (x4, x8, x16) CMOS SDRAM Revision History

Samsung 16M SDRAM B-die

Abstract: K4S510432B-TC K4S511632B
Contextual Info: SDRAM 512Mb B-die x4, x8, x16 CMOS SDRAM 512Mb B-die SDRAM Specification Revision 1.0 July, 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.0 July, 2003 SDRAM 512Mb B-die (x4, x8, x16) CMOS SDRAM Revision History

DDR2 SSTL class

Abstract: DDR2 SDRAM Component DDR2 sstl_18 class DDR2-667 K4T56083QF-GCCC K4T56083QF-GCD5 K4T56083QF-GCE6
Contextual Info: Preliminary DDR2 SDRAM 256Mb F-die DDR2 SDRAM 256Mb F-die DDR2 SDRAM Specification Version 0.91 September 2003 Rev. 0.91 Sep. 2003 Page 1 of 36 Preliminary DDR2 SDRAM 256Mb F-die DDR2 SDRAM Contents 1. Key Feature 2. Package Pinout/Mechnical Dimension & Addressing

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT 64M-BIT VIRTUAL CHANNEL SDRAM 64M-BIT VIRTUAL CHANNEL SDRAM Description The 64M-bit Virtual Channel VC SDRAM is implemented to be 100% pin and package compatible to the industry standard SDRAM. It uses the same command protocol and interface as SDRAM. The VC SDRAM command set is a

K4S1G0732B

Abstract: K4S1G0732B-TC75 RA12
Contextual Info: SDRAM stacked 1Gb B-die x8 CMOS SDRAM stacked 1Gb B-die SDRAM Specification Revision 1.1 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February 2004 SDRAM stacked 1Gb B-die (x8) CMOS SDRAM

K4H560838E-TCC

Abstract: DDR466 K4H560838E-TCC5 DDR333 K4H560838E
Contextual Info: DDR SDRAM 256Mb E-die x8 DDR SDRAM 256Mb E-die DDR466 SDRAM Specification Revision 1.0 Revision 1.0 October, 2003 DDR SDRAM 256Mb E-die (x8) DDR SDRAM 256Mb E-die Revision History Revision 0.0 (October, 2003) - First release Revision 0.1 (October, 2003)

K4S511632B

Abstract: K4S510432B-TC
Contextual Info: SDRAM 512Mb B-die x4, x8, x16 CMOS SDRAM 512Mb B-die SDRAM Specification Revision 1.1 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February 2004 SDRAM 512Mb B-die (x4, x8, x16) CMOS SDRAM