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    SDRAM SAMSUNG Search Results

    SDRAM SAMSUNG Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CSPT857CNLG Renesas Electronics Corporation 2.5V - 2.6V PLL Differential 1:10 SDRAM Clock Driver Visit Renesas Electronics Corporation
    CSPT857DPAG Renesas Electronics Corporation 2.5V-2.6V Phase Locked Loop Differential 1:10 SDRAM Clock Driver Visit Renesas Electronics Corporation
    CSPU877DBVG Renesas Electronics Corporation 1.8V Phase Locked Loop Differential 1:10 SDRAM Clock Driver Visit Renesas Electronics Corporation
    CSPT857DBVG8 Renesas Electronics Corporation 2.5V-2.6V Phase Locked Loop Differential 1:10 SDRAM Clock Driver Visit Renesas Electronics Corporation
    CSPU877ANLG8 Renesas Electronics Corporation 1.8V Phase Locked Loop Differential 1:10 SDRAM Clock Driver Visit Renesas Electronics Corporation

    SDRAM SAMSUNG Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K5W1G

    Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION


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    PDF BR-07-ALL-001 K5W1G KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G

    K4S561632E

    Abstract: K4S560432E K4S560432E-TC K4S560832E
    Text: SDRAM 256Mb E-die x4, x8, x16 CMOS SDRAM 256Mb E-die SDRAM Specification Revision 1.4 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.4 February 2004 SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM


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    PDF 256Mb 166MHz 16Bit A10/AP K4S561632E K4S560432E K4S560432E-TC K4S560832E

    K4S280432E

    Abstract: K4S281632E TL 2262 decoder
    Text: SDRAM 128Mb E-die x4, x8, x16 CMOS SDRAM 128Mb E-die SDRAM Specification Revision 1.4 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.4 February. 2004 SDRAM 128Mb E-die (x4, x8, x16) CMOS SDRAM


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    PDF 128Mb x4/x8/x16 110mA 140mA 166MHz. A10/AP K4S280432E K4S281632E TL 2262 decoder

    K4S643232H

    Abstract: K4S643232
    Text: SDRAM 64Mb H-die x32 CMOS SDRAM 64Mb H-die (x32) SDRAM Specification Revision 1.3 February 2004 *Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.3 February. 2004 SDRAM 64Mb H-die (x32) CMOS SDRAM Revision History


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    PDF A10/AP K4S643232H K4S643232

    K4S280432F

    Abstract: K4S281632F K4S281632F-TC
    Text: SDRAM 128Mb F-die x4, x8, x16 CMOS SDRAM 128Mb F-die SDRAM Specification Revision 1.0 January. 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.0 January. 2004 SDRAM 128Mb F-die (x4, x8, x16) CMOS SDRAM


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    PDF 128Mb 110mA 140mA 166MHz. A10/AP K4S280432F K4S281632F K4S281632F-TC

    tcl 14175

    Abstract: 8MB SDRAM K4S641632H-TC K4S640432H-TC K4S640832H K4S641632H
    Text: SDRAM 64Mb H-die x4, x8, x16 CMOS SDRAM 64Mb H-die SDRAM Specification Revision 1.4 November 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.4 November 2003 SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM


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    PDF A10/AP tcl 14175 8MB SDRAM K4S641632H-TC K4S640432H-TC K4S640832H K4S641632H

    Untitled

    Abstract: No abstract text available
    Text: SDRAM 64Mb H-die x4, x8, x16 CMOS SDRAM 64Mb H-die SDRAM Specification Revision 1.0 September 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.0 September 2003 SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM


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    PDF 16Bit A10/AP

    K4S280432F

    Abstract: K4S281632F
    Text: SDRAM 128Mb F-die x4, x8, x16 CMOS SDRAM 128Mb F-die SDRAM Specification Revision 1.1 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February 2004 SDRAM 128Mb F-die (x4, x8, x16) CMOS SDRAM


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    PDF 128Mb 110mA 140mA 166MHz. A10/AP K4S280432F K4S281632F

    K4S643232H

    Abstract: No abstract text available
    Text: SDRAM 64Mb H-die x32 CMOS SDRAM 64Mb H-die (x32) SDRAM Specification Revision 1.4 August 2004 *Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.4 August 2004 SDRAM 64Mb H-die (x32) CMOS SDRAM Revision History


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    PDF A10/AP K4S643232H

    K4S161622H-TC60

    Abstract: K4S161622H K4S161622H-TC55 K4S161622H-TC70 K4S161622H-TC80
    Text: SDRAM 16Mb H-die x16 CMOS SDRAM 16Mb H-die SDRAM Specification Revision 1.5 August 2004 Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.5 August 2004 SDRAM 16Mb H-die(x16) CMOS SDRAM Revision History Revision 0.0 (May, 2003)


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    PDF 200MHz. A10/AP K4S161622H-TC60 K4S161622H K4S161622H-TC55 K4S161622H-TC70 K4S161622H-TC80

    K4S280432E

    Abstract: K4S281632E
    Text: SDRAM 128Mb E-die x4, x8, x16 CMOS SDRAM 128Mb E-die SDRAM Specification Revision 1.2 May. 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 May. 2003 SDRAM 128Mb E-die (x4, x8, x16) CMOS SDRAM Revision History


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    PDF 128Mb x4/x8/x16 16Bit A10/AP K4S280432E K4S281632E

    Samsung 16M SDRAM B-die

    Abstract: K4S510432B-TC K4S511632B
    Text: SDRAM 512Mb B-die x4, x8, x16 CMOS SDRAM 512Mb B-die SDRAM Specification Revision 1.0 July, 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.0 July, 2003 SDRAM 512Mb B-die (x4, x8, x16) CMOS SDRAM Revision History


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    PDF 512Mb 16Bit A10/AP Samsung 16M SDRAM B-die K4S510432B-TC K4S511632B

    K4S1G0732B

    Abstract: K4S1G0732B-TC75 RA12
    Text: SDRAM stacked 1Gb B-die x8 CMOS SDRAM stacked 1Gb B-die SDRAM Specification Revision 1.1 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February 2004 SDRAM stacked 1Gb B-die (x8) CMOS SDRAM


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    PDF A10/AP K4S1G0732B K4S1G0732B-TC75 RA12

    K4S511632B

    Abstract: K4S510432B-TC
    Text: SDRAM 512Mb B-die x4, x8, x16 CMOS SDRAM 512Mb B-die SDRAM Specification Revision 1.1 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February 2004 SDRAM 512Mb B-die (x4, x8, x16) CMOS SDRAM


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    PDF 512Mb 16Bit A10/AP K4S511632B K4S510432B-TC

    samsung k4s561632e

    Abstract: CMOS SDRAM K4S560432E K4S560432E-TC K4S560832E K4S561632E
    Text: SDRAM 256Mb E-die x4, x8, x16 CMOS SDRAM 256Mb E-die SDRAM Specification Revision 1.3 September. 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.3 September. 2003 SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM


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    PDF 256Mb 166MHz 16Bit A10/AP samsung k4s561632e CMOS SDRAM K4S560432E K4S560432E-TC K4S560832E K4S561632E

    K4S640432H-TC

    Abstract: K4S640832H K4S641632H K4S641632H-TC
    Text: SDRAM 64Mb H-die x4, x8, x16 CMOS SDRAM 64Mb H-die SDRAM Specification Revision 1.3 October 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.3 October 2003 SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM


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    PDF A10/AP K4S640432H-TC K4S640832H K4S641632H K4S641632H-TC

    Untitled

    Abstract: No abstract text available
    Text: SDRAM 128Mb E-die x4, x8, x16 CMOS SDRAM 128Mb E-die SDRAM Specification Revision 1.3 January 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.3 January. 2004 SDRAM 128Mb E-die (x4, x8, x16) CMOS SDRAM


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    PDF 128Mb x4/x8/x16 110mA 140mA 166MHz. 16Bit A10/AP

    K4S561632E

    Abstract: sdram cmos K4S560432E K4S560432E-TC K4S560832E K4S5604
    Text: SDRAM 256Mb E-die x4, x8, x16 CMOS SDRAM 256Mb E-die SDRAM Specification Revision 1.5 May 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.5 May 2004 SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM Revision History


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    PDF 256Mb 166MHz A10/AP K4S561632E sdram cmos K4S560432E K4S560432E-TC K4S560832E K4S5604

    K4S280432F

    Abstract: K4S281632F
    Text: SDRAM 128Mb F-die x4, x8, x16 CMOS SDRAM 128Mb F-die SDRAM Specification Revision 1.2 May 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 May 2004 SDRAM 128Mb F-die (x4, x8, x16) CMOS SDRAM Revision History


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    PDF 128Mb 110mA 140mA 166MHz. A10/AP K4S280432F K4S281632F

    Untitled

    Abstract: No abstract text available
    Text: SDRAM 256Mb E-die x4, x8, x16 CMOS SDRAM 256Mb E-die SDRAM Specification Revision 1.2 June. 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 June. 2003 SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM Revision History


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    PDF 256Mb 166MHz 16Bit A10/AP

    K4S641632H

    Abstract: K4S640432H-TC K4S640832H K4S641632H-TC tcl 14175 8Mb samsung SDRAM
    Text: SDRAM 64Mb H-die x4, x8, x16 CMOS SDRAM 64Mb H-die SDRAM Specification Revision 1.8 August 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.8 August 2004 SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM Revision History


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    PDF A10/AP K4S641632H K4S640432H-TC K4S640832H K4S641632H-TC tcl 14175 8Mb samsung SDRAM

    Untitled

    Abstract: No abstract text available
    Text: SDRAM 128Mb E-die x4, x8, x16 CMOS SDRAM 128Mb E-die SDRAM Specification Revision 1.1 April. 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 Apr. 2003 SDRAM 128Mb E-die (x4, x8, x16) CMOS SDRAM Revision History


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    PDF 128Mb x4/x8/x16 16Bit A10/AP

    K4S161622H-TC60

    Abstract: K4S161622H K4S161622H-TC55 K4S161622H-TC70 K4S161622H-TC80
    Text: SDRAM 16Mb H-die x16 CMOS SDRAM 16Mb H-die SDRAM Specification Revision 1.3 January 2004 Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.3 January 2004 SDRAM 16Mb H-die(x16) CMOS SDRAM Revision History Revision 0.0 (May, 2003)


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    PDF 200MHz. A10/AP K4S161622H-TC60 K4S161622H K4S161622H-TC55 K4S161622H-TC70 K4S161622H-TC80

    K4S643232H-UC

    Abstract: No abstract text available
    Text: SDRAM 64Mb H-die x32 CMOS SDRAM 2M x 32 SDRAM 86 TSOP-II with Pb-Free (RoHS compliant) Revision 1.1 August 2004 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.1 August 2004 SDRAM 64Mb H-die (x32) CMOS SDRAM


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    PDF 32Bit A10/AP K4S643232H-UC