SDRAM 128M SAMSUNG Search Results
SDRAM 128M SAMSUNG Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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AM1705DPTP3 |
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Sitara Processor: ARM9, SDRAM, Ethernet 176-HLQFP 0 to 90 |
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AM1705DPTP4 |
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Sitara Processor: ARM9, SDRAM, Ethernet 176-HLQFP 0 to 90 |
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AM1705DPTPD4 |
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Sitara Processor: ARM9, SDRAM, Ethernet 176-HLQFP -40 to 90 |
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AM1705DPTPA3 |
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Sitara Processor: ARM9, SDRAM, Ethernet 176-HLQFP -40 to 105 |
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AM1707DZKB4 |
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Sitara Processor: ARM9, SDRAM, Ethernet, Display 256-BGA 0 to 90 |
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SDRAM 128M SAMSUNG Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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tc45 datasheetContextual Info: 128M DDR SDRAM K4D28163HD 128Mbit DDR SDRAM 2M x 16Bit x 4 Banks Double Data Rate Synchronous RAM Revision 1.0 December 2001 Samsung Electronics reserves the right to change products or specification without notice. - 1 - Rev. 1.0 Dec. 2001 128M DDR SDRAM |
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K4D28163HD 128Mbit 16Bit K4D28163HD-TC45/55 K4D28163HD-TC33/36 66pin 65TYP 20MAX tc45 datasheet | |
K4D261638E-TC36
Abstract: K4D261638E-TC50 K4D261638 K4D261638E K4D261638E-TC33 K4D261638E-TC40
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K4D261638E 128Mbit 16Bit K4D261638E-TC33 260mA 320mA K4D261638E-TC36 250mA 310mA K4D261638E-TC50 K4D261638 K4D261638E K4D261638E-TC40 | |
Contextual Info: 128M GDDR SDRAM K4D261638F 128Mbit GDDR SDRAM 2M x 16Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM Revision 1.4 February 2005 Samsung Electronics reserves the right to change products or specification without notice. - 1 - Rev 1.4 Feb. 2005 128M GDDR SDRAM |
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K4D261638F 128Mbit 16Bit -TC25 K4D261638F-TC25/2A/33/36 K4D261638F-TC25 17tCK 18tCK K4D261638F-TC2A/33/36 | |
K4D261638F-TC40
Abstract: K4D261638F K4D261638F-TC25 K4D261638F-TC2A K4D261638F-TC33 K4D261638F-TC36 K4D261638F-TC50 tras 36ns
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K4D261638F 128Mbit 16Bit K4D261638F-TC25/2A/33/36 K4D261638F-TC25 17tCK 18tCK K4D261638F-TC2A/33/36 15tCK K4D261638F-TC40 K4D261638F K4D261638F-TC2A K4D261638F-TC33 K4D261638F-TC36 K4D261638F-TC50 tras 36ns | |
Contextual Info: 128M GDDR SDRAM K4D261638F 128Mbit GDDR SDRAM 2M x 16Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM Revision 1.5 March 2005 Samsung Electronics reserves the right to change products or specification without notice. - 1 - Rev 1.5 Mar. 2005 128M GDDR SDRAM |
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K4D261638F 128Mbit 16Bit -TC25 K4D261638F-TC25/2A/33/36 K4D261638F-TC25 17tCK 18tCK | |
K4D28163HD-TC50
Abstract: K4D28163HD K4D28163HD-TC36 K4D28163HD-TC40 K4D28163HD-TC60
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K4D28163HD 128Mbit 16Bit K4D28163HD-TC36/40 4K/64ms 4K/32ms. K4D28163HD-TC36 275MHz) K4D28163HD-TC50 K4D28163HD K4D28163HD-TC36 K4D28163HD-TC40 K4D28163HD-TC60 | |
K4D261638E-TC36
Abstract: K4D261638E-TC50 K4D261638E K4D261638E-TC2A K4D261638E-TC33 K4D261638E-TC40
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K4D261638E 128Mbit 16Bit K4D261638E-TC2A K4D261638E-TC33 260mA 320mA K4D261638E-TC36 250mA K4D261638E-TC50 K4D261638E K4D261638E-TC40 | |
K4D263238D
Abstract: K4D263238D-QC40 K4D263238D-QC50
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K4D263238D 128Mbit 32Bit K4D263238D-QC55 183/166MHz K4D263238D-QC50. K4D263238D-QC45/60 K4D263238D K4D263238D-QC40 K4D263238D-QC50 | |
K4D263238F-UC
Abstract: K4D263238F-QC50 K4D263238F K4D263238F-QC40
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K4D263238F 128Mbit 32Bit K4D263238F-UC K4D263238F-QC50 K4D263238F K4D263238F-QC40 | |
Contextual Info: 128M DDR SDRAM K4D263238F 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL Revision 1.0 April 2003 - 1 - Rev 1.0 Jan 2003 128M DDR SDRAM K4D263238F Revision History Revision 1.0 (April 29, 2003) |
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K4D263238F 128Mbit 32Bit | |
Contextual Info: Target spec 128M DDR SDRAM K4D263238F 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL Revision 0.0 January 2003 - 1 - Rev. 0.0 Jan. 2003 Target spec 128M DDR SDRAM K4D263238F Revision History |
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K4D263238F 128Mbit 32Bit | |
ddr dimm pinout
Abstract: circuit diagram of ddr ram DDR200 PC2100 DDR dimm DDR DIMM 184 pinout
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184-pin ddr dimm pinout circuit diagram of ddr ram DDR200 PC2100 DDR dimm DDR DIMM 184 pinout | |
Contextual Info: Product Specifications PART NO.: VL33B2863F-K9S/F8S/E7S REV: 1.0 General Information 1GB 128M x 72 DDR3 SDRAM ULP ECC 240-PIN RDIMM Description The VL33B2863F is a 128M x 72 DDR3 SDRAM high density RDIMM. This memory module consists of nine CMOS 128M x 8 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered buffer/PLL clock in BGA |
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VL33B2863F-K9S/F8S/E7S 240-PIN VL33B2863F 28-bit 240-pin, VN-110909 | |
Kentron Technologies
Abstract: ddr dimm pinout DDR DIMM pinout micron 184 A 2630 ELPIDA PC2700 DDR266 PC2100 PC2700 DDR DIMM pinout micron DDR DIMM 184 pinout
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/256M 184-pin Kentron Technologies ddr dimm pinout DDR DIMM pinout micron 184 A 2630 ELPIDA PC2700 DDR266 PC2100 PC2700 DDR DIMM pinout micron DDR DIMM 184 pinout | |
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k4n26323ae
Abstract: K4N26 K4N26323AE-GC20 K4N26323AE-GC22 K4N26323AE-GC25
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K4N26323AE-GC 128Mbit 32Bit k4n26323ae K4N26 K4N26323AE-GC20 K4N26323AE-GC22 K4N26323AE-GC25 | |
Contextual Info: SDRAM MODULE KMM377S2858AT3 KMM377S2858AT3 SDRAM DIMM 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM377S2858AT3 is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The |
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KMM377S2858AT3 KMM377S2858AT3 128Mx72 128Mx4, 128Mx4 400mil 18-bits 24-pin | |
Contextual Info: Preliminary KMM377S2857AT2 SDRAM MODULE KMM377S2857AT2 SDRAM DIMM Intel 1.1 ver. Base 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD FEATURE GENERAL DESCRIPTION • Performance range The Samsung KMM377S2857AT2 is a 128M bit x 72 Syn |
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KMM377S2857AT2 KMM377S2857AT2 128Mx72 128Mx4, KMM377S2857AT2-GH 100MHz 128Mx4 KMM377S2857AT2-GL | |
MA2180Contextual Info: SDRAM MODULE KMM377S2858AT2 KMM377S2858AT2 SDRAM DIMM Intel 1.1 ver. Base 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM377S2858AT2 is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The |
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KMM377S2858AT2 KMM377S2858AT2 128Mx72 128Mx4, 128Mx4 400mil 18-bits 24-pin MA2180 | |
Contextual Info: 128M GDDR-II SDRAM K4N26323AE-GC 128Mbit GDDR-II SDRAM 1M x 32Bit x 4 Banks GDDR-II SDRAM with Differential Data Strobe and DLL Revision 1.5 December 2002 Samsung Electronics reserves the right to change products or specification without notice. - 1 - Rev. 1.5 Dec. 2002 |
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K4N26323AE-GC 128Mbit 32Bit | |
Contextual Info: Product Specifications PART NO: REV: 1.1 VL470T5664A-E6S/D5S/CCS General Information 2GB 256Mx64 DDR2 SDRAM NON-ECC UNBUFFERED SODIMM 200-PIN Description: The VL470T5664A is a 256M X 64 DDR2 SDRAM high density SODIMM. This memory module consists of sixteen CMOS 128M X 8 bit 2 x 128Mx8 configured to 128M x16 with 8 banks DDR2 Synchronous DRAMs in |
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VL470T5664A-E6S/D5S/CCS 256Mx64 200-PIN VL470T5664A 128Mx8 200-pin PC2-5300 PC2-4200 PC2-3200 | |
K4D263238K-UC50
Abstract: K4D263238K
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K4D263238K 128Mbit K4D263238K-UC50 K4D263238K | |
Contextual Info: Product Specifications PART NO: REV: 1.1 VL470T5664A-E6S/D5S/CCS-I General Information 2GB 256Mx64 DDR2 SDRAM NON-ECC UNBUFFERED SODIMM 200-PIN Description: The VL470T5664A is a 256M X 64 DDR2 SDRAM high density SODIMM. This memory module consists of sixteen CMOS 128M X 8 bit 2 x 128Mx8 configured to 128M x16 with 8 banks DDR2 Synchronous DRAMs in |
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VL470T5664A-E6S/D5S/CCS-I 256Mx64 200-PIN VL470T5664A 128Mx8 200-pin | |
DDR2-400
Abstract: DDR2-533 DDR2-667 PC2-3200 PC2-5300 DDR2 SODIMM SPD JEDEC SPEC
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VL470T5664A-E6S/D5S/CCS 256Mx64 200-PIN VL470T5664A 128Mx8 200-pin PC2-5300 PC2-4200 PC2-3200 DDR2-400 DDR2-533 DDR2-667 PC2-3200 PC2-5300 DDR2 SODIMM SPD JEDEC SPEC | |
samsung GDDR5
Abstract: K4D263238K-VC40 GDDR5 application note samsung K4D263238K-VC50 tcl 2272 GDDR GDDR2 GDDR3 GDDR4 GDDR5 K4D263238K gddr5 samsung K4D263238KVC40 K4D263238KVC50
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K4D263238K 128Mbit 875ns 06Gbps) samsung GDDR5 K4D263238K-VC40 GDDR5 application note samsung K4D263238K-VC50 tcl 2272 GDDR GDDR2 GDDR3 GDDR4 GDDR5 K4D263238K gddr5 samsung K4D263238KVC40 K4D263238KVC50 |