LV327
Abstract: sd 484 ip LV-302 LV315
Text: K6 Miniature Key Switches Features/Benefits • Excellent tactile feel • Wide variety of LED’s, travel and actuation forces • Designed for low-level Typical Applications • Automotive • Industrial electronics • Computers and network equipment switching
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LV306
LV327
LV315
LV352
LV302
LV328
sd 484 ip
LV-302
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13n03la
Abstract: Q67042-S4160
Text: IPU13N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max 12.8 mΩ ID 30 A • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
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IPU13N03LA
P-TO252-3-11
P-TO251-3-1
Q67042-S4160
13N03LA
13n03la
Q67042-S4160
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IPB14N03LA
Abstract: P-TO263-3-2 14N03 14n03la
Text: IPB14N03LA IPI14N03LA, IPP14N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max (SMD version) 13.6 mW ID 30 A • Logic level • Excellent gate charge x R DS(on) product (FOM)
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IPB14N03LA
IPI14N03LA,
IPP14N03LA
P-TO263-3-2
P-TO262-3-1
P-TO220-3-1
IPI14N03LA
P-TO263-3-2
14N03
14n03la
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13N03LA
Abstract: GD 364 IPF13N03LA *13N03LA 13n03l
Text: IPF13N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max 13.3 mΩ ID 30 A • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
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IPF13N03LA
P-TO252-3-23
Q67042-S4195
13N03LA
13N03LA
GD 364
IPF13N03LA
*13N03LA
13n03l
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13n03la
Abstract: IPD13N03LA P-TO252-3-11
Text: IPD13N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max 13 mΩ ID 30 A • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
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IPD13N03LA
P-TO252-3-11
Q67042-S4159
13N03LA
13n03la
IPD13N03LA
P-TO252-3-11
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13N03LA
Abstract: IPF13N03LA 13n03l
Text: IPF13N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max 13.3 mW ID 30 A • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
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IPF13N03LA
P-TO252-3-23
Q67042-S4195
13N03LA
13N03LA
IPF13N03LA
13n03l
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14N03LA
Abstract: 14N03L 14N03 IPB14N03LA G IPI14N03LA IPP14N03LA IPB14N03LA
Text: IPB14N03LA IPI14N03LA, IPP14N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max (SMD version) 13.6 mΩ ID 30 A • Logic level • Excellent gate charge x R DS(on) product (FOM)
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IPB14N03LA
IPI14N03LA,
IPP14N03LA
P-TO263-3-2
P-TO262-3-1
P-TO220-3-1
Q67042-S4156
14N03LA
14N03LA
14N03L
14N03
IPB14N03LA G
IPI14N03LA
IPP14N03LA
IPB14N03LA
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13N03LA
Abstract: No abstract text available
Text: IPD13N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max 13 mΩ ID 30 A • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
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IPD13N03LA
P-TO252-3-11
Q67042-S4159
13N03LA
13N03LA
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16cn10n
Abstract: IEC61249-2-21 IPP16CN10N PG-TO220-3 infineon marking TO-252
Text: IPB16CN10N G IPD16CN10N G IPI16CN10N G IPP16CN10N G OptiMOS 2 Power-Transistor Product Summary Features V DS 100 V • N-channel, normal level R DS on ,max (TO252) 16 mΩ • Excellent gate charge x R DS(on) product (FOM) ID 53 A • Very low on-resistance R DS(on)
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IPB16CN10N
IPD16CN10N
IPI16CN10N
IPP16CN10N
IEC61249-2-21
PG-TO263-3
16cn10n
IEC61249-2-21
PG-TO220-3
infineon marking TO-252
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IPP16CN10N
Abstract: No abstract text available
Text: OptiMOS 2 Power-Transistor IPB16CN10N G IPD16CN10N G IPI16CN10N G IPP16CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 16 mΩ ID 53 A • Very low on-resistance R DS(on)
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IPB16CN10N
IPI16CN10N
IPD16CN10N
IPP16CN10N
PG-TO263-3
16CN10N
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16cn10n
Abstract: IPP16CN10N PG-TO220-3
Text: OptiMOS 2 Power-Transistor IPB16CN10N G IPD16CN10N G IPI16CN10N G IPP16CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 16 mΩ ID 53 A • Very low on-resistance R DS(on)
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IPB16CN10N
IPI16CN10N
IPD16CN10N
IPP16CN10N
PG-TO263-3
PG-TO252-3
16cn10n
PG-TO220-3
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16cn10n
Abstract: 16cn10 IPP16CN10N D53A PG-TO220-3 16CN1
Text: OptiMOS 2 Power-Transistor IPB16CN10N G IPD16CN10N G IPI16CN10N G IPP16CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 16 mΩ ID 53 A • Very low on-resistance R DS(on)
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IPB16CN10N
IPI16CN10N
IPD16CN10N
IPP16CN10N
PG-TO263-3
PG-TO252-3
16cn10n
16cn10
D53A
PG-TO220-3
16CN1
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16cn10n
Abstract: 16cn10 IPB16CN10N 16CN1
Text: OptiMOS 2 Power-Transistor IPB16CN10N G IPD16CN10N G IPI16CN10N G IPP16CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 16 mΩ ID 53 A • Very low on-resistance R DS(on)
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IPB16CN10N
IPI16CN10N
IPD16CN10N
IPP16CN10N
PG-TO263-3
16CN10N
16cn10n
16cn10
16CN1
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14N03LA
Abstract: 14n03 14N03L GD 364 IPB14N03LA IPI14N03LA IPP14N03LA
Text: IPB14N03LA IPI14N03LA, IPP14N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max (SMD version) 13.6 mΩ ID 30 A • Logic level • Excellent gate charge x R DS(on) product (FOM)
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IPB14N03LA
IPI14N03LA,
IPP14N03LA
P-TO263-3-2
P-TO262-3-1
P-TO220-3-1
Q67042-S4156
14N03LA
14N03LA
14n03
14N03L
GD 364
IPB14N03LA
IPI14N03LA
IPP14N03LA
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Untitled
Abstract: No abstract text available
Text: PD - 96086 IRF7309IPbF • Lead-Free Description www.irf.com 1 07/07/06 IRF7309IPbF 2 www.irf.com IRF7309IPbF www.irf.com 3 IRF7309IPbF 4 www.irf.com IRF7309IPbF www.irf.com 5 IRF7309IPbF 6 www.irf.com IRF7309IPbF www.irf.com 7 IRF7309IPbF 8 www.irf.com IRF7309IPbF
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IRF7309IPbF
EIA-481
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Untitled
Abstract: No abstract text available
Text: IRF7316QPbF Electrical Characteristics @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage
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IRF7316QPbF
EIA-481
EIA-541.
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WT2S-P161
Abstract: WT2S-P431 WL2S-P211 wt2s-p461 WT2S-P261 WT2S-N131 WT2S-P131 WT2S-P231 WL2S-P111 Sensick
Text: KD01_W2_en.fm Seite 476 Montag, 24. Juli 2006 3:03 15 Photoelectric proximity switch, WT 2 Slim, BGS, red light Scanning distance 1 . 15/30 mm Dimensional drawing 12.5 Photoelectric proximity switch 3 4 15 2 25.1 20.6 1 5 detection jobs possible Insensitive to interference
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WT2S-F131
WT2S-N111
WT2S-N131
WT2S-P111
WS/WE2F-E110
WS/WE2F-F110
WS/WE2F-F210
WS/WE2F-F410
WS/WE2F-N110
WS/WE2F-P210
WT2S-P161
WT2S-P431
WL2S-P211
wt2s-p461
WT2S-P261
WT2S-N131
WT2S-P131
WT2S-P231
WL2S-P111
Sensick
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Untitled
Abstract: No abstract text available
Text: Cyclone V Device Overview 2013.05.06 CV-51001 Subscribe Feedback The Cyclone V devices are designed to simultaneously accommodate the shrinking power consumption, cost, and time-to-market requirements; and the increasing bandwidth requirements for high-volume and
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CV-51001
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Untitled
Abstract: No abstract text available
Text: IRF7303QPbF Electrical Characteristics @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient Qg Q gs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
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IRF7303QPbF
EIA-481
EIA-541.
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TOKO 1002
Abstract: No abstract text available
Text: FD-Family Switching Regulators, PCB + Chassis Benign Environment TOKO Switching Regulators FD-Family No Input to output isolation Single output of 3.3,5,12,15 or 30 V DC/0.5.1.5 W Double output of ±12 or ±15 V DC/0.5.3 W Input voltage from 4.5 V up to 17 V DC
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Untitled
Abstract: No abstract text available
Text: OSM SMA Specifications Qcnaral MatartU 33 8 t*d oorre ilon re d itin t per A 8 T M -A -6 8 2 and A ST M -A -484, Type 303. Beryilum oopper per A 8 T M 0 1 0 6 . PTFE Rourooerbon par A 8T M -0-1457. Rntoh 331 Center o o n tio ti shall be gold pitted to t min. thtoknen of .00005 Inch In eooordeno* with
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022S4
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SX405
Abstract: 4070 omron itt 9503
Text: omRon EE-SX3 /SX4 PCB-mount Sensors with Photo 1C Output Have Built-in Preamplifier Chip and Schmitt Circuit • Compact, lightweight model with a receiver and amplifier circuit built into a single chip ■ Excellent temperature characteristics assured by
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OpaSX428
EE-SX384/SX484
EE-SX3070/SX4070
SX405
4070 omron
itt 9503
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motorola mpf990
Abstract: No abstract text available
Text: MPF930* MPF960* MPF990* M A X IM U M R ATIN G S Rating Symbol MPF930 MPF960 MPF990 Unit Drain-Source Voltage VDS 35 60 90 Vdc Drain-Gate Voltage VDG 35 60 90 Vdc Gate-Source Voltage — Continuous - Non-repetitive tp s 50 ¿¿s Drain Current Continuous (1)
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MPF930*
MPF960*
MPF990*
MPF930
MPF960
MPF990
O-226AE)
MPF990
motorola mpf990
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Untitled
Abstract: No abstract text available
Text: SSF7N90A Advanced Power MOSFET FEATURES b vdss = • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance ■ Improved Gate Charge lD = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 n A (M a x ) @ VDS = 900V
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SSF7N90A
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