SD 347 TRANSISTOR Search Results

SD 347 transistor

Abstract: BUZ 1025 SD 347
Contextual Info: SIEMENS BUZ 347 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 347 Vbs 50 V fa ^DSfon Package Ordering Code 45 A 0.03 f l TO-218AA C67078-S3115-A2 Maximum Ratings Parameter Symbol Values Continuous drain current

SD 347 transistor

Contextual Info: SIEMENS SIPMOS Power Transistor BUZ 347 • N channel • Enhancement mode • Avalanche-rated Type BUZ 347 50V A ^DS on) Package 1) O rdering Code 45A 0.03 Q TO-218 AA C67078-S3115-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current, Tc = 28 "C

SD 347

Contextual Info: SIEMENS SIPMOS Power MOS Transistors BUZ 15 BUZ 347 = 50 V ^DS = 45 A b 0.03 Q ^DS on • N channel • E nhancem ent mode • A valanche-proof • Packages: T O -2 04 A E (TO-3), TO -2 18 A A (T O P -3)’ ) Type Ordering code BUZ 15 C 6 70 78-A 100 1 -A2

Contextual Info: SIEMENS BUZ 347 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vbs BUZ 347 50 V h 45 A ^bs on Package Ordering Code 0.03 n TO-218AA C67078-S31 15-A2 Maximum Ratings Parameter Symbol Continuous drain current

sd 347

Abstract: VEB mikroelektronik Transistoren DDR sd 346 Funkamateur FUNKAMATEUR-Bauelementeinformation SD349 telefunken transistoren MIKROELEKTRONIK ERFURT aktive elektronische bauelemente ddr
Contextual Info: FUNKAMATEUR-Bauelementeinformation Silizium-npn- und -pnp-Leistungstransistoren in Epitaxie-Planar-Technologie A pplikationsschaltungen T G L 39125 H ersteller: V E B M ik ro e le k tro n ik „ A n n a S e g h e r s " N e u h a u s Kurzcharakteristik Grenzwerte im Betriebstemperaturbereich

transistor BD 263

Contextual Info: SIEMENS BUZ 50 B SIPMOS Power Transistor • N channel • Enhancement mode Type Vds BUZ 50 B 1000 V 2A flbsion Package Ordering Code 8 Í2 TO-220 AB C67078-A1307-A4 Maximum Ratings Parameter Symbol Drain source voltage Vds Drain-gate voltage ^DGR Rqs = 20 k£2

Transistoren DDR

Abstract: vergleichsliste TELEFUNKEN bux 127 aktive elektronische bauelemente ddr BUX 127 SF 127 vergleichsliste DDR "vergleichsliste" bauelemente DDR sf 369
Contextual Info: VT FUNKAMATEUR-Bauelementeinformation Vergleichsliste für Transistoren DDR/international DDR-Typ Vergleichstyp Beschreibung Hinweise SC 237/238/239 SC 307/308/309 SCE 237 SD 335/337/339 BC 237/238/239 BC 307/308/309 BC 847 BCW 71/72 BCX 70 BC 848 BCW 31/32/33/60

Contextual Info: j » mfRFProcfcjcfs ftp products M ic m s e -m * 140 C o m m e rc e Drive m M o m g e n « « ^ ^ , p a 18936 - 10 « Tel: 215 6 3 1-9 840 A a w w sK i ô y Tiwfiw arotyy i c m <f ì A « O U I 4 U Ü -4 RF & MICROWAVE TRANSISTORS 860-900MHZ CLASS C, BASE STATIONS

IR4060

Abstract: BUZ50 C67078-A1307-A4
Contextual Info: SIEMENS BUZ 50 B SIPMOS Power Transistor • N channel • Enhancement mode Type Vbs to BUZ 50 B 1000 V 2A flbston 8 Í2 Package Ordering Code TO-220 AB C67078-A1307-A4 Maximum Ratings Parameter Symbol Drain source voltage ^DS Drain-gate voltage ''DGR

diode code 88

Contextual Info: C i p Ì Ü &P">» - i "2 '|i SIPMOS Small-Signal Transistors VDS la = 240 V = 0 .2 9 /0 .2 5 A ^ D S o n = 8 BSP 88 BSS 88 TO -92 (BSS 88) SOT-223 (BSP 88) Q • N channel • Enhancement mode • Packages: SOT-223, s TO-92 ’ ) G Type Ordering code

SSY20

Abstract: SF828 VEB mikroelektronik funkamateur BUX 127 SF126 SF 127 SF128 SF826 SF 829 B
Contextual Info: FUNKAMATEUR-Bauelementeinformation DDR-SiliziumTransistoren Typenübersicht Si-Transistoren des VEB Kombinat Mikroelektronik Grenzdaten Zonen­ Vorzugs­ anwendungen2 folge P,o, [mW, W ] Typ1 Kenndaten UcBO U ceO T • T * 1C , ACsat [V] [V] [mA, (A)] fiT3

SF126

Abstract: transistor SD335 SD349 SSY20 SF829 SD 338 SF826 mikroelektronik Berlin SD339 SD338
Contextual Info: Der Kollektor ist mit der metallischen Montageflache leitend verbunden Uw e Beier Transistoren aus dem Kombinat Mikroelektronik electrónica • Band 245 UWE BEIER Transistoren aus dem Kombinat M ikroelektronik M ILITARVERLAG DER DEUTSCHEN DEM OKRATISCHEN

Contextual Info: SIEMENS BUZ 50 B SIPMOS Power Transistor • N channel • Enhancement mode Type BUZ 50 B Vbs 1000 V b 2A ^BS on 8ß Package Ordering Code TO-220 AB C67078-A1307-A4 Maximum Ratings Parameter Symbol Drain source voltage ^DS Drain-gate voltage '' dgr Rq s = 20 ki2

8D140

Abstract: SD1400-2 oomils APAA M118 SD1400-02
Contextual Info: M tm mi RF Products RF^Pmducts m - • M icrosem i 140 C o m m erc e Drive M o n tg o m ery ville, PA 18936-1013 18936-1013 Tel: 2 1 5 6 3 1 -9 8 4 0 ^ ^ _ SD1400-2 RF & MICROWAVE TRANSISTORS 860-900MHz CLASS C, BASE STATIONS CLASS C TRANSISTOR FREQUENCY875MHZ

transistor 372

Contextual Info: SIEMENS BSP 372 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated • ^GS th = °-8 - 2 0 v Type lD ^DS(on) Package Marking 1.7 A 0.31 Q SOT-223 BSP 372 BSP 372 Vds 100 V Type BSP 372 Ordering Code Q 67000-S300

Contextual Info: UNITRODE CORP ÎË 9347963 UNITRODE dF CORP J ^347^1=3 GDlGSlb 5 |~~ 92D 10516 D T - M -/ 3 POWER MOSFET TRANSISTORS , JTX, JTXV 400 Volt, 0.3 Ohm N-Channel FEA TU R ES • Fa st S w itching • Low Drive C urren t • E a se of Parallelin g • No S eco n d B reakd ow n

Contextual Info: _ • 0045644 fZ 7 Ä 7# ETS ■ SGTH _ S C S -T H O M S O N [Ä « [L iO T r e s S T E 1 8 0 N 05 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE V dss STE180N05 50 V R d S o ii < 0.006 a Id 180 A ■ HIGH CURRENT POWER MODULE

2N6788 motorola

Abstract: 2N6788 Motorola 2n6788
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information P o w er Field E ffe c t Transistor N-Channel Enhancement-Mode Silicon Gate TMOS N-CHANNEL TMOS POWER FET rDS on “ 0.3 OHM 100 VOLTS . . . designed for high voltage, high speed power sw itching applications such as sw itching regulators, converters, so ­

Contextual Info: UNITRODE CORP iS 9347963 DE § ^ 3 4 7 ^ 3 GDlD7flb •=] U N I T R O D E CORP 92D 10786 POWER MOSFET TRANSISTORS D/-37-&#39;*' UFN1130 700 Volt, 3.5 Ohm N-Channel FEATURES DESCRIPTION This new Unitrode power MOSFET utilizes the latest high voltage advanced technology

transistor irfp 150

Abstract: IRFP 150 transistor irfp IRFP P CHANNEL IRFP IRFP150 3421A transistor irfp IRFP-150
Contextual Info: Æ 7 SGS-THOMSON ^ 7 £ . M ^G J M M <§§ IRFP 150/FI-151/FI IRFP 152/FI-153/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRFP150 IRFP150FI IRFP151 IRFP151FI IRFP152 IRFP152FI IRFP153 IRFP153FI V DSS ^D S (o r 'd ' 100 100 60 60 100 100

S100 transistor

Abstract: BUK455-200A BUK455-200B S100 T0220AB transistor smps circuit TRANSISTOR BO 345 db40ci0 PHILIPS S100
Contextual Info: PHILIPS INTERNATIONAL bSE D B 711002b ÜObMQÔb bbT • PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

diode sy 345

Abstract: diode SY 192 sd 339 sy 320 diode SD 338 SY 345 KT 829 b k3451 KT 828 A SD337
Contextual Info: SERVICE-MITTEILUNGEN V E B R F T I N D U S T R I E V E R T R I E B R U N D F U N K UND F E R N S E H E N t B i n n a |r a d i o - t e l e v i s i o n I Ausgobe 1-2 _ _ Febr. 89 1-7 Mitteilung aus dam VEB RFT IV RuF Leipzig, Organisation Plan der Inventurtermine Ersatztell/sroßhandel 1989

IRFP RE 40

Abstract: IRFP P CHANNEL IRFP150 SGS Transistor
Contextual Info: r= Z SGS-THOM SON ^ 7#» HDfgMilLlKgirMDlgi IRFP 150/F I-151/FI IRFP 152/F I-153/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^D S on IRFP150 IRFP150FI 100 V 100 V 0.055 fi 0.055 Q IRFP151 IRFP151 FI 60 V 60 V 0.055 0.055 IRFP152 IRFP152FI

17mQ

Abstract: to220 5 lead plastic UFN513
Contextual Info: U N IT R O D E CORP 9347963 ^2 UNITRODE O Q lD b lt fi 1 ~ DE CORP 92D 10696 D i POWER MOSFET TRANSISTORS ^fnsio 100 Volt, 0.6 Ohm N-Channel UFN512 UFN513 FEATURES • Compact Plastic Package • Fast Switching • Low Drive Current • Ease of Paralleling