15N60
Abstract: 20N60 sd 20n60 20n60 G K 15N60 15n60 TO-247 20n60 to-247 20N60NS SD 10 N60
Text: HiPerFETTM Power MOSFETs IXFH/IXFM 15 N60 IXFH/IXFM 20 N60 Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 600 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 600 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 T C = 25°C 15N60 20N60 15 20
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15N60
20N60
15N60
20N60
sd 20n60
20n60 G
K 15N60
15n60 TO-247
20n60 to-247
20N60NS
SD 10 N60
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information COOLMOS * Power MOSFET IXKP 20N60C5M ID25 = 7.6 A VDSS = 600 V RDS on max = 0.2 W Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-220 FP D G D S G S Features MOSFET Conditions
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20N60C5M
O-220
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information IXKP 20N60C5M ID25 = 7.6 A VDSS = 600 V RDS on max = 0.2 Ω CoolMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Conditions
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20N60C5M
O-220
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information COOLMOS * Power MOSFET IXKP 20N60C5M ID25 = 7.6 A VDSS = 600 V RDS on max = 0.2 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Symbol
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20N60C5M
O-220
20070704a
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information COOLMOS * Power MOSFET IXKP 20N60C5M ID25 = 7.6 A VDSS = 600 V RDS on max = 0.2 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Conditions
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20N60C5M
O-220
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20n60c5
Abstract: 20n60c5m
Text: IXKP 20N60C5M CoolMOS 1 Power MOSFET ID25 = 7.6 A VDSS = 600 V RDS on) max = 0.2 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions
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20N60C5M
O-220
20090209d
20n60c5
20n60c5m
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Untitled
Abstract: No abstract text available
Text: IXKP 20N60C5M CoolMOS 1 Power MOSFET ID25 = 7.6 A VDSS = 600 V RDS on) max = 0.2 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions
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20N60C5M
O-220
20090209d
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20n60c5
Abstract: No abstract text available
Text: IXKP 20N60C5M CoolMOS 1 Power MOSFET ID25 = 7.6 A VDSS = 600 V RDS on) max = 0.2 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions
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20N60C5M
O-220
20080523c
20n60c5
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ph-15 diode
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFAST IGBT with Diode IXGH IXGT 20N60BD1 20N60BD1 V CES ^C25 VCE sat typ t’fi(typ) Combi Pack Symbol Test Conditions Maximum Ratings T j = 25° C to 150" C 600 V Tj = 25' C to 150 C; RGf = 1 M li 600 V Continuous ±20
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20N60BD1
20N60BD1
O-268
O-247AD
ph-15 diode
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Untitled
Abstract: No abstract text available
Text: IXKH 20N60C5 IXKP 20N60C5 Advanced Technical Information ID25 = 20 A = 600 V VDSS RDS on max = 0.2 Ω CoolMOS Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D S D (TAB) S TO-220 AB (IXKP) G
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20N60C5
20N60C5
O-247
O-220
Appli300
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20N60Q
Abstract: transistor N 343 AD
Text: IXFH 20N60Q IXFT 20N60Q HiPerFETTM Power MOSFETs VDSS ID25 = = = RDS on Q-Class 600 V 20 A 0.35 Ω trr ≤ 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Gate Charge and Capacitances Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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20N60Q
250ns
O-247
O-268
728B1
123B1
728B1
065B1
20N60Q
transistor N 343 AD
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Untitled
Abstract: No abstract text available
Text: IXKH 20N60C5 IXKP 20N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 20 A VDSS = 600 V RDS on max = 0.2 W N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-247 AD (IXKH) D G G D S S D(TAB) TO-220 AB (IXKP)
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20N60C5
O-247
O-220
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Untitled
Abstract: No abstract text available
Text: IXFH 20N60Q IXFT 20N60Q HiPerFETTM Power MOSFETs VDSS ID25 = = = RDS on Q-Class 600 V 20 A 0.35 Ω trr ≤ 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Gate Charge and Capacitances Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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20N60Q
250ns
O-247
O-268
728B1
123B1
728B1
065B1
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20n60c5
Abstract: DSA003709
Text: IXKH 20N60C5 IXKP 20N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 20 A VDSS = 600 V RDS on max = 0.2 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D q D(TAB) S S TO-220 AB (IXKP)
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20N60C5
O-247
O-220
20070625a
DSA003709
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20n60c5
Abstract: IXKH20N60C5 20n60c IXKP20N60C5 20n60c* equivalent 20n60 K 739 mosfet MOSFET "symbol 7V" MOSFET N
Text: IXKH 20N60C5 IXKP 20N60C5 CoolMOS 1 Power MOSFET ID25 = 20 A VDSS = 600 V RDS on) max = 0.2 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D q D(TAB) S S TO-220 AB (IXKP) G D S Features MOSFET Symbol
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20N60C5
O-247
O-220
20080523d
20n60c5
IXKH20N60C5
20n60c
IXKP20N60C5
20n60c* equivalent
20n60
K 739 mosfet
MOSFET "symbol 7V"
MOSFET N
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Untitled
Abstract: No abstract text available
Text: IXKH 20N60C5 IXKP 20N60C5 COOLMOS * Power MOSFET ID25 = 20 A VDSS = 600 V RDS on max = 0.2 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D q D(TAB) S S TO-220 AB (IXKP) G D S Features MOSFET Symbol
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20N60C5
O-247
O-220
20080310c
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Untitled
Abstract: No abstract text available
Text: IXKH 20N60C5 IXKP 20N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 20 A VDSS = 600 V RDS on max = 0.2 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D q D(TAB) S S TO-220 AB (IXKP)
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20N60C5
O-247
O-220
20070625a
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IXYS CS 2-12
Abstract: No abstract text available
Text: □IXYS IXFH 15N60 IXFH 20N60 HiPerFET Power MOSFETs •TM IXFH/FM 15N60 IXFH/FM 20N60 IXFM 15N60 IXFM 20N60 □ V DSS ^D25 600 V 600 V 15 A 20 A DS on K 0.50 Q. 250 ns 0.35 Q 250 ns N-Channel Enhancement Mode High dv/dt, L o w trr, HDMOS Family TO-247 AD
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15N60
20N60
O-247
IXYS CS 2-12
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20N60S5
Abstract: No abstract text available
Text: SIEMENS SPW20N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity • Former development designation:
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SPW20N60S5
N60S5
SPW20N60S5
P-T0247
20N60S5
Q67040-S4238
20N60S5
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20n60s5
Abstract: transistor 20N60s5 20n60s5 power transistor n60s5
Text: SIEMENS SPP20N60S5 SPB20N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Worldwide best R 0S 0n in TO 220 • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances
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SPP20N60S5
SPB20N60S5
N60S5/SPBx1
N60S5
SPP20N60S5
P-T0220-3-1
P-T0263-3-2
20N60S5
20n60s5
transistor 20N60s5
20n60s5 power transistor
n60s5
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20n60s5
Abstract: transistor 20N60s5 20n60s5 power transistor 20n60s N60S5 SPP20N60 SPB20N60S5 smd transistor S5 SPP20N60S5
Text: SIEMENS SPP20N60S5 SPB20N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Worldwide best R q S 0 n ¡n TO 220 • Ultra low gate charge • Periodic avalanche proved • Extreme äv/ät rated • Optimized capacitances
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SPP20N60S5
SPB20N60S5
N60S5/SPBx1
N60S5
P-T0220-3-1
P-T0263-3-2
20N60S5
20N60S5
transistor 20N60s5
20n60s5 power transistor
20n60s
N60S5
SPP20N60
SPB20N60S5
smd transistor S5
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20n60s5
Abstract: transistor 20N60s5 20n60s5 power transistor n60s5 20n60s siemens 230 98 O SPP20N60S5 smd diode sm i7 siemens 350 98 Q67040-S4751
Text: SIEMENS SP P 20N 60S 5 SP B 20N 60S 5 Prelim inary data c’ D ,2 Cool MOS Power Transistor I I • New revolutionary high voltage technology / Í • Worldwide best R o s { o n in TO 220 i 0 -G ,1 S /T • Periodic avalanche proved • I ‘
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SPP20N60S5
SPB20N60S5
N60S5/SPBx1
N60S5
SPP20N60S5
SPB20N60S5
P-T0220-3-1
P-T0263-3-2
20N60S5
transistor 20N60s5
20n60s5 power transistor
n60s5
20n60s
siemens 230 98 O
smd diode sm i7
siemens 350 98
Q67040-S4751
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20n60cfd
Abstract: D8172 JESD22 PG-TO220-3-31 SP000216361 SPA20N60CFD transistor D207 D207
Text: SPA20N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode V DS 600 V R DS on ,max 0.22 Ω I D1) 20.7 A • Extremely low reverse recovery charge • Ultra low gate charge
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SPA20N60CFD
PG-TO220-3-31
SP000216361
20N60CFD
20n60cfd
D8172
JESD22
PG-TO220-3-31
SP000216361
SPA20N60CFD
transistor D207
D207
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d207
Abstract: 20N60CFD DF 331 TRANSISTOR JESD22 PG-TO220-3-31 SP000216361 SPA20N60CFD d207 infineon
Text: SPA20N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode V DS 600 V R DS on ,max 0.22 Ω I D1) 20.7 A • Extremely low reverse recovery charge • Ultra low gate charge
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SPA20N60CFD
PG-TO220-3-31
SP000216361
20N60CFD
d207
20N60CFD
DF 331 TRANSISTOR
JESD22
PG-TO220-3-31
SP000216361
SPA20N60CFD
d207 infineon
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