scr inverter schematic circuit
Abstract: SCR Inverter datasheet General electric SCR Power INVERTER schematic circuit scr inverter schematic inverter SCR SCR PNPN four-layer diode scr power control schematic Bipolar Junction Transistor
Text: Latch-Up LATCH-UP CIRCUIT Latch-up is caused by an SCR Silicon Controlled Rectifier circuit. Fabrication of CMOS integrated circuits with bulk silicon processing creates a parasitic SCR structure. The behavior of this SCR is similar in principle to a true SCR. These structures result from the multiple diffusions
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14105C-001
scr inverter schematic circuit
SCR Inverter datasheet
General electric SCR
Power INVERTER schematic circuit
scr inverter schematic
inverter SCR
SCR PNPN
four-layer diode
scr power control schematic
Bipolar Junction Transistor
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SCR Inverter
Abstract: SCHEMATIC POWER SUPPLY WITH scr SCR PNPN
Text: GENERAL INFORMATION 1 Latch-up LATCH-UP CIRCUIT Latch-up is caused by an SCR Silicon Controlled Rectifier circuit. Fabrication of CMOS integrated circuits with bulk silicon processing creates a parasitic SCR structure. The behavior of this SCR is similar in principle to a true SCR. These structures result from the multiple diffusions needed for
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14105B-1
SCR Inverter
SCHEMATIC POWER SUPPLY WITH scr
SCR PNPN
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MCR08BT1
Abstract: No abstract text available
Text: MCR08BT1 Series* Advance Information SOT-223 SCR Silicon Controlled R ectifiers * Motorola Preferred Device« Reverse Blocking Ttiode Thyristors SCR 0.8 AMPERE RMS 200 thru 600 Volts PNPN devices designed for line powered consumer applications such as relay and
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MCR08BT1
OT-223
318E-04
OT-223)
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Photo SCR
Abstract: PNPN SCR PNPN DATASHEET SCR "AND Gate" scr data sheet and circuit transistor c 557 datasheets of scr photo diode SCR TRIGGER circuit
Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714.979.8220 FAX: 714.557.5989 MXP1017 Photo SCR Features Light Activated Photo SCR Planar PNPN High Voltage Cathode and Gate pads are Aluminum Wire bondable • Anode is backside of die • Backside Metallization - Gold
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MXP1017
MSC1329
Photo SCR
PNPN
SCR PNPN
DATASHEET SCR
"AND Gate"
scr data sheet and circuit
transistor c 557
datasheets of scr
photo diode
SCR TRIGGER circuit
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Untitled
Abstract: No abstract text available
Text: 華昕電子 HI-SINCERITY SCR XL 1225 / ML 1225 0.6A 300/400 VOLTAGE SCR IGT < 200 µA DESCRIPTION The 1225 Silicon Controlled Rectifiers are high performance diffused PNPN devices. These parts are intended for low cost and high volume applications. ABSOLUTE MAXIMUM RATING
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Untitled
Abstract: No abstract text available
Text: TS820-B SENSITIVE SCR FEATURES IT RMS = 8A VDRM/VRRM = 400 to 600V IGT < 200µA A DESCRIPTION A The TS820-B series of SCR use a high performance TOPGLASS PNPN technology. The parts are intended for general purpose applications using surface mount technology.
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TS820-B
TS820-B
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600B
Abstract: TS420-B
Text: TS420-B SENSITIVE SCR FEATURES IT RMS =4A VDRM/VRRM = 400 or 600V IGT < 200µA A DESCRIPTION A The TS420-B series of SCR use a high performance TOPGLASS PNPN technology. The parts are intended for general purpose applications using surface mount technology.
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TS420-B
TS420-B
600B
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photo scr
Abstract: PS3001
Text: N.E C ELECTRONICS 3 0E INC D • bME7SES ODa^bû 7 ■ PHOTO S.CR COUPLERS c P S3001 1 , PS3002(1 ) PHOTO SCR COUPLER DESCRIPTION The PS3001 and PS3002 are optically coupled isolators containing GaAs infrared emitting diode and a PNPN silicon photo SCR.
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S3001
PS3002
PS3001
b427525
PS3001
T-41-87
photo scr
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crowbar
Abstract: TN1215-600B TN1215600 DC12-10
Text: TN1215-600B STANDARD SCR FEATURES ITRMS = 12 A VDRM / VRRM = 600 V IGT < 15 mA ITSM = 110 A A DESCRIPTION A The TN1215-600B SCR uses a high performance TOPGLASS PNPN technology. This part is intended for general purpose applications using surface mount technology and
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TN1215-600B
TN1215-600B
crowbar
TN1215600
DC12-10
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Photo SCR
Abstract: SCR PNPN ma 2830 MSC1330 chip scr mxp1018 MXP1018-C
Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714.979.8220 FAX: 714.557.5989 MXP1018-C Photo SCR Chip Features • • • • • • • Light Activated Photo SCR Planar PNPN High Voltage Cathode and Gate pads are Aluminum Wire bondable Anode is backside of die
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MXP1018-C
MSC1330
Photo SCR
SCR PNPN
ma 2830
chip scr
mxp1018
MXP1018-C
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SCR 600V 8A
Abstract: TS420-600B RL33 ts4204
Text: TS420-B SENSITIVE SCR PRELIMINARY DATASHEET FEATURES IT RMS = 4A VDRM/VRRM = 400 to 600V IGT < 200µA A DESCRIPTION A The TS420-B series of SCR use a high performance TOPGLASS PNPN technology. The parts are intended for general purpose applications using surface mount technology.
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TS420-B
TS420-B
SCR 600V 8A
TS420-600B
RL33
ts4204
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600B
Abstract: TS820-B
Text: TS820-B SENSITIVE SCR FEATURES IT RMS =8A VDRM/VRRM = 400 or 600V IGT < 200µA SMD PACKAGE A A G DESCRIPTION K The TS820-B series of SCR use a high performance TOPGLASS PNPN technology. The parts are intended for general purpose applications using surface mount technology.
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TS820-B
TS820-B
600B
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NTE5414
Abstract: NTE5413 NTE5415 6A2S NTE5416 scr 6A NTE5411 NTE5412
Text: NTE5411 thru NTE5416 Silicon Controlled Rectifier SCR 4 Amp, Sensitive Gate, TO126 Description: The NTE5411 through NTE5416 are PNPN silicon controlled rectifier (SCR) devices designed for high volume consumer applications such as temperature, light, and speed control: process and remote control, and warning systems where reliability of operation is important.
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NTE5411
NTE5416
NTE5416
NTE5411
200mA,
NTE5414
NTE5413
NTE5415
6A2S
scr 6A
NTE5412
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ps3002
Abstract: PS3001 nec reed relay
Text: 30E D N.E C EL EC TRONICS INC PHOTO SpR COUPLERS PS3001 1 , PS3002(1 ) PHOTO SCR COUPLER DESCRIPTION The PS3001 and PS3002 are o p tica lly coupled isolators containing GaAs infrared e m itting diode and a PNPN silicon p h o to SCR. PACKAGE DIMENSIONS in millimeters (inches)
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PS3001
PS3002
PS3001
500Vdcm
b427555
T-41-87
nec reed relay
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NTE5415
Abstract: NTE5414 NTE5416 nte5413 NTE5411 NTE5412
Text: NTE5411 thru NTE5416 Silicon Controlled Rectifier SCR 4 Amp, Sensitive Gate Description: The NTE5411 through NTE5416 are PNPN silicon controlled rectifier (SCR) devices designed for high volume consumer applications such as temperature, light, and speed control: process and remote control, and warning systems where reliability of operation is important.
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NTE5411
NTE5416
NTE5416
NTE5411
200mA,
NTE5415
NTE5414
nte5413
NTE5412
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0b2c
Abstract: TN815-600
Text: TN805/TN815-B SCR’s PRELIMINARY DATASHEET . . FEATURES ITRMS = 8 A VDRM = 400 V to 800 V IGT ≤ 5 mA and 15 mA A G A K DESCRIPTION The TN805/TN815-B serie of SCR uses a high performance TOPGLASS PNPN technology. The parts are intended for general purpose
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TN805/TN815-B
TN805/TN815-B
100mA
0b2c
TN815-600
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TS420-B
Abstract: No abstract text available
Text: SENSITIVE SCR PRELIMINARY DATASHEET FEATURES • It rms = 4A ■ V drm /V rrm = 400 to 600V ■ Ig t < 20 0 j i A DESCRIP TION The TS420-B series of SCR use a high perfor mance TOPGLASS PNPN techno logy. K The parts are intended tor general purpose appli
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TS420-B
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Untitled
Abstract: No abstract text available
Text: TS820-B/T SENSITIVE SCR FEATURES • It rm s = 8A ■ V drm /V rrm = 400, 600V, 700V ■ Ig t < 200^A ■ SMD PACKAGE DESCRIPTION The TS820-B/T series of SCR use a high perform ance TOPGLASS PNPN technology. The parts are intended for general purpose appli
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TS820-B/T
TS820-B/T
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rgk 20/2
Abstract: TS420-B TS420-T
Text: TS420-B/T SENSITIVE SCR FEATURES A IT RMS = 4A VDRM/VRRM = 400, 600V, 700V IGT < 200µA SMD PACKAGE A A DESCRIPTION G K The TS420-B/T series of SCR use a high performance TOPGLASS PNPN technology. The parts are intended for general purpose applications using surface mount or through hole technology.
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TS420-B/T
TS420-B/T
O-220AB
TS420-T
TS420-B
rgk 20/2
TS420-B
TS420-T
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Untitled
Abstract: No abstract text available
Text: TS420-B SENSITIVE SCR FEATURES • It rm s = 4A ■ V drm /V rrm = 4 0 0 or 6 0 0 V ■ Ig t < 200^A DESCRIPTION The TS420-B series of SCR use a high perfor mance TOPGLASS PNPN technology. K The parts are intended for general purpose appli cations using surface mount technology.
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TS420-B
TS420-B
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rgk 20/2
Abstract: TS820-B TS820-T TS820 ts820b
Text: TS820-B/T SENSITIVE SCR FEATURES A IT RMS =8A VDRM/VRRM = 400, 600V, 700V IGT < 200µA SMD PACKAGE A A DESCRIPTION G K K The TS820-B/T series of SCR use a high performance TOPGLASS PNPN technology. The parts are intended for general purpose applications using surface mount or through hole technology.
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TS820-B/T
TS820-B/T
O-220AB
TS820-T
TS820-B
10mications
rgk 20/2
TS820-B
TS820-T
TS820
ts820b
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Untitled
Abstract: No abstract text available
Text: TN1215-600B STANDARD SCR FEATURES • It r m s = 1 2 A ■ V drm / V = 600 V rrm < 15 mA It s m = 110 A ■ Ig t ■ DESCRIPTION The TN1215-600B SCR uses a high performance TOPGLASS PNPN technology. This part is intended for general purpose applications using surface mount technology and
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TN1215-600B
TN1215-600B
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ic mm74hc
Abstract: triggering scr with microprocessor cmos scr AN-339 national MM74HC SCR TRIGGER PULSE circuit AN-339 CD4000 MM74C 74HC
Text: Fairchild Semiconductor Application Note 339 November 1987 INTRODUCTION SCR latch-up is a parasitic phenomena that has existed in circuits fabricated using bulk silicon CMOS technologies. The latch-up mechanism, once triggered, turns on a parasitic SCR internal to CMOS circuits which essentially shorts VCC
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MM54HC/MM74HC
ic mm74hc
triggering scr with microprocessor
cmos scr
AN-339 national
MM74HC
SCR TRIGGER PULSE circuit
AN-339
CD4000
MM74C
74HC
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TS420-400B
Abstract: No abstract text available
Text: SGS THOMSON “ 7# ffiaieœ uLK m riO iiisi TS420-B SENSITIVE SCR FEATURES • It RMS =4A ■ VdrmA/rrm = 400 or 600V ■ Ig t < 200|iA DESCRIPTION The TS420-B series of SCR use a high perfor mance TOPGLASS PNPN technology. The parts are intended for general purpose appli
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TS420-B
TS420-B
TS420400B
TS420-400B
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