kl2 diode
Abstract: kl4 surface mount diode Marking Stempelung Diode BAT54AW BAT54CW BAT54SW BAT54W kl3 diode kl4 diode doppeldiode
Text: BAT54W .AW .CW .SW Schottky-Diodes Surface mount Schottky-Barrier Double-Diodes Schottky-Barrier Doppel-Dioden für die Oberflächenmontage Version 21.01.2004 Power dissipation – Verlustleistung 2±0.1 Repetitive peak reverse voltage Periodische Spitzensperrspannung
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BAT54W
OT-323
BAT54W-series
BAT54AW
BAT54CW
BAT54SW
kl2 diode
kl4 surface mount diode
Marking Stempelung Diode
BAT54AW
BAT54CW
BAT54SW
BAT54W
kl3 diode
kl4 diode
doppeldiode
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BAT54c kl3 l43
Abstract: kl3 diode BAT54S kl1 Marking Stempelung Diode BAT54 BAT54A BAT54C BAT54S KL4 SOT-23 kl4 diode
Text: BAT54 .A .C .S Schottky-Diodes Surface mount Schottky-Barrier Single-/ Double-Diodes Schottky-Barrier Einzel-/ Doppel-Dioden für die Oberflächenmontage Version 2004-03-10 Power dissipation – Verlustleistung Repetitive peak reverse voltage Periodische Spitzensperrspannung
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BAT54
OT-23
O-236)
BAT54,
BAT54A,
BAT54C,
BAT54S
BAT54C
BAT54A
BAT54c kl3 l43
kl3 diode
BAT54S kl1
Marking Stempelung Diode
BAT54
BAT54A
BAT54C
BAT54S
KL4 SOT-23
kl4 diode
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1640CT
Abstract: SBD1630CT SBD1645CT 1645CT S1630T-S1645T
Text: MOSPEC SBD1630CT thru SBD1645CT SWITCHMODE POWER RECTIFIERS D PAK SURFACE MOUNT POWER PACKAGE SCHOTTKY BARRIER RECTIFIERS The D PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have
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SBD1630CT
SBD1645CT
O-251
1640CT
SBD1645CT
1645CT
S1630T-S1645T
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PDF
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80SQ05
Abstract: No abstract text available
Text: 80SQ05 Schottky-Barrier-Gleichrichter Schottky Barrier Rectifiers Version 2004-08-31 Nominal current Nennstrom Ø 5.2 8A ±0.2 ±0.2 Type 50 V Plastic case Kunststoffgehäuse 9.2 62.5 ±0.5 Repetitive peak reverse voltage Periodische Spitzensperrspannung ~ DO-27
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80SQ05
DO-27
UL94V-0
80SQ05
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PDF
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Untitled
Abstract: No abstract text available
Text: 80SQ05 Schottky-Barrier-Gleichrichter Schottky Barrier Rectifiers Version 2005-01-12 Nominal current Nennstrom Ø 5.2 8A ±0.2 ±0.2 Type 50 V Plastic case Kunststoffgehäuse 9.2 62.5 ±0.5 Repetitive peak reverse voltage Periodische Spitzensperrspannung ~ DO-27
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80SQ05
DO-27
UL94V-0
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PDF
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kl4 diode
Abstract: kl3 diode BAT54 BAT54A BAT54C BAT54S kl2 diode marking code kl4 k1 diode
Text: BAT54 .A .C .S Schottky-Diodes Surface mount Schottky-Barrier Single-/ Double-Diodes Schottky-Barrier Einzel-/ Doppel-Dioden für die Oberflächenmontage Version 2004-10-08 Power dissipation Verlustleistung 1.1 2.9 ±0.1 0.4 Repetitive peak reverse voltage
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BAT54
OT-23
O-236)
BAT54,
BAT54A,
BAT54C,
BAT54S
BAT54C
BAT54A
kl4 diode
kl3 diode
BAT54
BAT54A
BAT54C
BAT54S
kl2 diode
marking code kl4
k1 diode
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PDF
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Untitled
Abstract: No abstract text available
Text: 80SQ05 80SQ05 Schottky Barrier Rectifiers Schottky-Barrier-Gleichrichter Version 2005-10-28 Ø 5.2 Nominal Current Nennstrom ±0.2 8A ~ DO-27 Weight approx. Gewicht ca. 1g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert
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80SQ05
DO-27
UL94V-0
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SBL830
Abstract: SBL835 SBL840 SBL845 SBL850 SBL860
Text: SBL830–SBL860 Vishay Lite–On Power Semiconductor 8A Schottky Barrier Rectifiers Features D D D D Schottky barrier chip Guard ring for transient protection Low power loss, high efficiency High current capability and low forward voltage drop D High surge capability
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SBL830
SBL860
SBL830
SBL835
SBL840
SBL845
SBL850
D-74025
24-Jun-98
SBL835
SBL840
SBL845
SBL850
SBL860
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD SB8U60 Preliminary DIODE 8A SCHOTTKY BARRIER RECTIFIER DESCRIPTION The UTC SB8U60 is a 8A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with sort, fast switching capability and low forward voltage drop, etc.
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SB8U60
SB8U60
SB8U60L-T27-R
SB8U60G-T27-R
O-277
QW-R202-027
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Untitled
Abstract: No abstract text available
Text: SB820 . SB8100 SB820 . SB8100 Schottky Barrier Rectifiers Schottky-Barrier-Gleichrichter Version 2005-07-06 Nominal Current Nennstrom ±0.1 Repetitive peak reverse voltage Periodische Spitzensperrspannung Ø 5.4 x 7.5 [mm] Weight approx. Gewicht ca. 1.4g
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SB820
SB8100
UL94V-0
SB820.
SB840
SB850,
SB860
SB890,
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kl4 diode
Abstract: kl2 diode kl4 surface mount diode marking K2 diode kl3 diode marking code kl3 BAT54SW L44
Text: BAT54W BAT54W Surface Mount Schottky-Barrier Double-Diodes Schottky-Barrier Doppel-Dioden für die Oberflächenmontage Version 2011-10-19 Power dissipation – Verlustleistung 1 2 ±0.1 0.3 Repetitive peak reverse voltage Periodische Spitzensperrspannung
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BAT54W
OT-323
UL94V-0
BAT54SW=
BAT54CW
BAT54AW
kl4 diode
kl2 diode
kl4 surface mount diode
marking K2 diode
kl3 diode
marking code kl3
BAT54SW L44
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PDF
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SB8100
Abstract: SB820 SB830 SB840 SB850 SB860 Diotec SB8100
Text: SB820 . SB8100 SB820 . SB8100 Schottky Barrier Rectifiers Schottky-Barrier-Gleichrichter Version 2005-12-06 Nominal current Nennstrom ±0.1 Repetitive peak reverse voltage Periodische Spitzensperrspannung Ø 5.4 x 7.5 [mm] Weight approx. Gewicht ca. 1.0 g
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SB820
SB8100
UL94V-0
SB820.
SB840
SB850,
SB860
SB890,
SB8100
SB820
SB830
SB840
SB850
SB860
Diotec SB8100
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Untitled
Abstract: No abstract text available
Text: SB820 … SB8100 Schottky Barrier Rectifiers Schottky-Barrier-Gleichrichter Version 2005-01-26 Nominal current Nennstrom ±0.1 Repetitive peak reverse voltage Periodische Spitzensperrspannung 20…100 V Plastic case Kunststoffgehäuse 7.5 ±0.1 Type 62.5 ±0.5
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SB820
SB8100
UL94V-0
SB820.
SB840
SB850,
SB860
SB890,
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PDF
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BAT54W
Abstract: No abstract text available
Text: BAT54W BAT54W Surface Mount Schottky-Barrier Double-Diodes Schottky-Barrier Doppel-Dioden für die Oberflächenmontage Version 2014-08-21 Power dissipation – Verlustleistung 1 2 ±0.1 0.3 Repetitive peak reverse voltage Periodische Spitzensperrspannung
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BAT54W
OT-323
UL94V-0
BAT54W-sle
BAT54SW=
BAT54CW
BAT54AW
BAT54W
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80SQ05
Abstract: No abstract text available
Text: 80SQ05 80SQ05 Schottky Barrier Rectifiers Schottky-Barrier-Gleichrichter Version 2006-12-08 Nominal Current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Ø 1.2 ~ DO-27 Weight approx. Gewicht ca. 1g Plastic material has UL classification 94V-0
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80SQ05
DO-27
UL94V-0
80SQ05
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CD-700
Abstract: SBL1630PT SBL1635PT SBL1640PT SBL1645PT SBL1650PT SBL1660PT
Text: SBL1630PT–SBL1660PT Vishay Lite–On Power Semiconductor 16A Schottky Barrier Rectifier Features D Schottky barrier chip D Guard ring die constuction for transient protection D Low power loss, high efficiency D High current capability and low forward voltage
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SBL1630PT
SBL1660PT
SBL1630PT
SBL1635PT
SBL1640PT
SBL1645PT
SBL1650PT
SBL166
D-74025
24-Jun-98
CD-700
SBL1635PT
SBL1640PT
SBL1645PT
SBL1650PT
SBL1660PT
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ENN8206
Abstract: CPH5810 MCH3312
Text: CPH5810 Ordering number : ENN8206 CPH5810 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an P-Channel Sillicon MOSFET MCH3312 and a Schottky Barrier Diode (SBS001)
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CPH5810
ENN8206
MCH3312)
SBS001)
ENN8206
CPH5810
MCH3312
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ss1001
Abstract: MCH3445 MCH5812 SS10015M
Text: MCH5812 Ordering number : ENN7998 MCH5812 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with a N-channel sillicon MOSFET MCH3445 and a schottky barrier diode (SS10015M)
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MCH5812
ENN7998
MCH3445)
SS10015M)
ss1001
MCH3445
MCH5812
SS10015M
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PDF
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CPH5808
Abstract: MCH3409 SBS004 77705
Text: CPH5808 Ordering number : ENN7770 CPH5808 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications Features • • • Composite type with a N-Channel Silicon MOSFET MCH3409 and a Schottky Barrier Diode (SBS004) contained
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CPH5808
ENN7770
MCH3409)
SBS004)
CPH5808
MCH3409
SBS004
77705
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PDF
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marking QJ
Abstract: CPH5808 MCH3409 SBS004
Text: CPH5808 Ordering number : ENN7770 CPH5808 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications Features • • • Composite type with a N-Channel Silicon MOSFET MCH3409 and a Schottky Barrier Diode (SBS004) contained
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CPH5808
ENN7770
MCH3409)
SBS004)
marking QJ
CPH5808
MCH3409
SBS004
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PDF
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V 15356
Abstract: SBL1640CT DATA SHEET SBL1660CT SBL1630 SBL1630CT SBL1635CT SBL1640CT SBL1645 SBL1645CT SBL1650
Text: SBL1630CT–SBL1660CT Vishay Lite–On Power Semiconductor 16A Schottky Barrier Rectifier Features D Schottky barrier chip D Guard ring die constuction for transient protection D Low power loss, high efficiency D High current capability and low forward voltage
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SBL1630CT
SBL1660CT
SBL1630CT
SBL1635CT
SBL1640CT
SBL1645CT
SBL1650CT
SBL16
D-74025
24-Jun-98
V 15356
SBL1640CT DATA SHEET
SBL1660CT
SBL1630
SBL1635CT
SBL1640CT
SBL1645
SBL1645CT
SBL1650
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENN6980 CPH5804 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5804 DC / DC Converter Applications Features Package Dimensions Composite type with a P-Channel Sillicon MOSFET unit : mm MCH3312 and a Schottky Barrier Diode (SBS006M) 2171
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ENN6980
CPH5804
MCH3312)
SBS006M)
CPH5804]
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PDF
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80SQ05
Abstract: No abstract text available
Text: 80SQ05 80SQ05 Schottky Barrier Rectifier Diodes Schottky-Barrier-Gleichrichterdioden Version 2007-11-06 Nominal Current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Ø 5.4 x 7.5 [mm] ~ DO-27 Weight approx. Gewicht ca. 1g Plastic material has UL classification 94V-0
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80SQ05
DO-27)
UL94V-0
80SQ05
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PDF
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diode N1004
Abstract: CPH5822 MCH3312 N1004 SBS010M
Text: CPH5822 Ordering number : ENN7702A CPH5822 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • DC / DC converter applications. Composite type with a P-Channel Sillicon MOSFET MCH3312 and a Schottky Barrier Diode (SBS010M)
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CPH5822
ENN7702A
MCH3312)
SBS010M)
diode N1004
CPH5822
MCH3312
N1004
SBS010M
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