SBL840 Search Results

MODELS 830, 860

Abstract: SBL830 SBL835 SBL840 SBL845 SBL850 SBL860
Contextual Info: SBL830 - SBL860 8.0A SCHOTTKY BARRIER RECTIFIER SPICE MODELS: SBL830 SBL835 SBL840 SBL845 SBL850 SBL860 Features • · · · · · · Schottky Barrier Chip Guard Ring for Transient Protection Low Power Loss, High Efficiency High Current Capability, Low VF

SBL830

Abstract: SBL835 SBL840 SBL845
Contextual Info: SBL830 thru SBL845 Low VF Schottky Barrier Rectifiers Dimensions TO-220AC A C A B C D E F G H J K L M N Q A C C TAB A=Anode, C=Cathode, TAB=Cathode VRRM V 30 35 40 45 SBL830 SBL835 SBL840 SBL845 Symbol VRMS V 21 24.5 28 31.5 Dim. VDC V 30 35 40 45 Characteristics

SBL830

Abstract: SBL835 SBL840 SBL845
Contextual Info: SBL830 thru SBL845 Low VF Schottky Barrier Rectifiers Dimensions TO-220AC A C A B C D E F G H J K L M N Q A C C TAB A=Anode, C=Cathode, TAB=Cathode VRRM V 30 35 40 45 SBL830 SBL835 SBL840 SBL845 Symbol VRMS V 21 24.5 28 31.5 Dim. VDC V 30 35 40 45 Characteristics

Contextual Info: SPICE MODELS: SBL830 SBL835 SBL840 SBL845 SBL850 SBL860 SBL830 - SBL860 8.0A SCHOTTKY BARRIER RECTIFIER Features • · · · · · · Schottky Barrier Chip Guard Ring for Transient Protection TO-220AC Low Power Loss, High Efficiency L High Current Capability, Low VF

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

Contextual Info: MCC TM Micro Commercial Components SBL820
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# THRU SBL860 Features • • • • • High Surge Capacity High Efficiency Low Forward Voltage Low Power Loss

Contextual Info: Schottky Barrier Rectifiers Type Num ber M axim um Average Rectified Current @ Half-Wave Resistive Load 60Hz M axim um Forward Peak Surge Current @ 8.3ms Superim posed PRV l0 @ Tc lFM Surge M axim um Reverse Current @ PRV M axim um Forward Voltage @ 2 5 ° Tc

Contextual Info: MCC TM Micro Commercial Components SBL820
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# THRU SBL860 Features • • • • • High Surge Capacity High Efficiency Low Forward Voltage High Current Capability

2SA733AP

Abstract: 2N3055B 2sc945b 2SA733A S8550D sa15tp TPT5609 MP1010B s8050d S9012H
Contextual Info: MCC's EU RoHS and Green Halogen Antimony Free Parts List Package RoHS Compliant EU RoHS Exemption Code 1.5KE10-TP/AP/BP DO-201AE X 7a Matte Tin 1.5KE100-TP/AP/BP DO-201AE X 7a 1.5KE100A-TP/AP/BP DO-201AE X 1.5KE100C-TP/AP/BP DO-201AE 1.5KE100CA-TP/AP/BP

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

smd marking 911 zener

Abstract: d3g smd NPN Transistor smd code LY 83 marking codes transistors a8 sot-23 TRANSISTOR SMD MARKING CODE s2a 1045ct mosfet SOD-123 a18 W06* MARKING smd code KBJ 3580 6045pt
Contextual Info: RETURN TO SHORT FORM TABLE OF CONTENTS ################################### RETURN TO SHORT FORM INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Short Form Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 September 1999 Specifications are subject to change without notice.

melf diode marking

Abstract: A180-WLA RS503s SBR130S3 Schottky melf hall sensor 35l 5KE91A-B PR1005G-A GBPC3504L STPR2020CT
Contextual Info: PCN PART NUMBER LISTING Part Number PCN Title Rel date Comments 1.5KE100A-B 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100A-T 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100CA-B 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100CA-T 1049 Lead-Free Lead Finish

SBL1040T

Abstract: SBL4040PT TO-247ad SBL530 SBL535 SBL540 SBL545 SBL550 SBL560 SBL830
Contextual Info: Schottky Barrier Diodes Low VF Schottky Barrier Diodes Tj=-40°C~+125C, Tjm=+125°C Òype VR=VRRM IFAV Electrical Characteristics IR @ VR=VRRM IFSM 125°C 125°C A mA mA V A SBL530 30 5 175 0.5 SBL535 35 5 175 SBL540 40 5 SBL545 45 SBL550 VFmax @ IFM Package Style

Green

Abstract: SMBJ11CA BAS70WT S1B40 UF5406T MTZJ10A SMBJ14CA SMBJ16CA SMBJ160CA SMBJ13CA
Contextual Info: MCC's EU RoHS and Green Halogen Antimony Free Parts List Package RoHS Compliant EU RoHS Exemption Code 1.5KE10-TP/AP/BP DO-201AE X 7a Matte Tin 1.5KE100-TP/AP/BP DO-201AE X 7a 1.5KE100A-TP/AP/BP DO-201AE X 1.5KE100C-TP/AP/BP DO-201AE 1.5KE100CA-TP/AP/BP

Contextual Info: LITE ON POWER SEMICONDUCTOR SBL830 thru SBL860 REVERSE VOLTAGE - 30 to 60 Volts FORWARD CURRENT - 8.0 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AC FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency

Contextual Info: PRODUCT CHANGE NOTICE Contact Date: Implementation Date: Alert Category: Alert Type: July 24, 2006 August 1, 2006 Discrete Semiconductor Marking Change DCS/PCN-1046 PCN #: PCN #: 1046 TITLE Improved Marking IMPACT NONE DESCRIPTION OF CHANGE Upgrade part marking to Laser marking from ink markings

Contextual Info: S BL830-S BL860 Vishay Lite-On Power Semiconductor 8A Schottky Barrier Rectifiers Features • S chottky barrier chip • Guard ring fo r tran sien t protection • Low pow er loss, high efficiency • High current capability and low forw ard voltage drop

Contextual Info: llA IE t ilWU SCHOTTKY BARRIER RECTIFIERS OPERATING/STORAGE TEMPERATURE RANGE -6 5 °C to +150°C Maximum Average Rectified Current @ Half-Wave Resistive Load Maximum :|i TYPE î H IM qÜ ; Â I î .}! PRV lo @ T q * Q_ > a av ;i Maximum F orw ard; >Peak Surge Current;

FBU4K

Abstract: FBU4J PBL302 1DQ04 2FBP06 FBU4G 1N4007 FAGOR FBU8K KBPC251OW 1IN5406
Contextual Info: RECTIFIER INDEX C R O SS REFERENCE LITE-ON MOTOROLA Gl P/N P/N P/N 1 N4001 1N 4001 1N4001G IR P/N FU JI SGS-THOMSON VARO FAGOR P/N P/N P/N P/N 1N4001 1N4001 1N4001G L 126 1N4002 1N4002G 1 N4002 10D1 ERB12-1 1N4001F 148 1N4002 150 126 1 N 4 0 0 2 GP 1N4002GL

Contextual Info: MCC TM Micro Commercial Components SBL820
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# THRU SBL860 Features • • • • Lead Free Finish/RoHS Compliant Note 1 ("P" Suffix designates

Contextual Info: MCC SBL820
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# THRU SBL860 Features • • • • • High Surge Capacity High Efficiency Low Forward Voltage High Current Capability Low Power Loss