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Comchip Technology Corporation Ltd SB545-G Schottky Diode
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
NAC	SB545-G				1,200	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Comchip Technology Corporation Ltd SB545E-G Schottky Diode
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
NAC	SB545E-G				1,200	1 - 10 - 100 - 1000 - 10000 -	Get Quote

SB545 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SB545		General Semiconductor	SCHOTTKY BARRIER RECTIFIER		Original	PDF

SB545 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SB545 Abstract: No abstract text available Text: SB 545 SCHOTTKY DIE SPECIFICATION General Description: 45 V 5 A 5Standard □Low VF， TYPE: SB545 (5Single □Dual) Anode SYM Spec. Limit VRRM 45 Volt IFAV 5 Amp VF MAX 0.520 Volt IR MAX 0.200 mA Nonrepetitive Peak Surge Current IFSM 150 Amp Operating Junction Temperature	Original	SB545 62mil) SB545	PDF
SB545 Abstract: SB5100E-G sb5100e DA121073-150 SB520E-G 550E 560E Text: Low VF/ESD Leaded Schottky Barrier Rectifiers SB520E-G thru SB5100E-G "-G" : RoHS Device Voltage Range: 20 to 100 V Current: 5.0 A FEATURES DO-201AD • Low drop down voltage • 5.0A operation at T A =75°C with no thermal runaway • For use in low voltage, high frequency invertors free	Original	SB520E-G SB5100E-G DO-201AD IEC61000-4-2 UL94-V0 MIL-STD-750 50mVp-p MDS0906005A SB550E SB545 SB5100E-G sb5100e DA121073-150 550E 560E	PDF
Untitled Abstract: No abstract text available Text: Comchip ESD Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB520E-G Thru. SB5100E-G Voltage: 20 to 100 V Current: 5.0 A RoHS Device DO-201AD Features -Low drop down voltage. -5.0A operation at TA=75°C with no thermal runaway. -For use in low voltage, high frequency invertors free	Original	SB520E-G SB5100E-G DO-201AD IEC6100-4-2 UL94-V0 MIL-STD-750 Method60E SB580E SB5100E	PDF
SB545E-G Abstract: SB520E-G SB550E-G SB560E-G SB580E-G SB5100E-G Text: Comchip ESD Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB520E-G Thru. SB5100E-G Voltage: 20 to 100 V Current: 5.0 A RoHS Device DO-201AD Features -Low drop down voltage. -5.0A operation at TA=75°C with no thermal runaway. -For use in low voltage, high frequency invertors free	Original	SB520E-G SB5100E-G DO-201AD IEC6100-4-2 UL94-V0 MIL-STD-750 B560E SB580E SB5100E SB545E-G SB550E-G SB560E-G SB580E-G SB5100E-G	PDF
SB550-G Abstract: SB545-G SB520-G SB560-G SB580-G SB5100-G 5100G Text: Comchip Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB520-G Thru. SB5100-G Voltage: 20 to 100 V Current: 5.0 A RoHS Device DO-201AD Features -Low drop down voltage. 1.0 25.4 Min. -Metal-Semiconductor junction with guard ring 0.210(5.3) 0.189(4.8)	Original	SB520-G SB5100-G DO-201AD UL94-V0 MIL-STD-750 45B-G SB550B-G SB560B-G SB580B-G SB550-G SB545-G SB560-G SB580-G SB5100-G 5100G	PDF
Untitled Abstract: No abstract text available Text: SB 545 SCHOTTKY DIE SPECIFICATION General Description: 45 V 5 A 5Standard □Low VF， ELECTRICAL CHARACTERISTICS SYM DC Blocking Voltage: Ir=1mA(for wafer form) VRRM Ir=0.5mA (for dice form) Average Rectified Forward Current IFAV Maximum Instantaneous Forward Voltage	Original	SB545 96mil)	PDF
SB545 Abstract: No abstract text available Text: Comchip Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB520-G Thru. SB5100-G Voltage: 20 to 100 V Current: 5.0 A RoHS Device DO-201AD Features -Low drop down voltage. -Metal-Semiconductor junction with guard ring 1.0 25.4 Min. 0.210(5.3) 0.189(4.8)	Original	SB520-G SB5100-G DO-201AD UL94-V0 MIL-STD-750 SB550B-G SB560B-G SB580B-G SB5100B-G SB545	PDF