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Comchip Technology Corporation Ltd SB545-G Schottky Diode
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
NAC	SB545-G				1,200	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Comchip Technology Corporation Ltd SB545E-G Schottky Diode
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
NAC	SB545E-G				1,200	1 - 10 - 100 - 1000 - 10000 -	Get Quote

SB545 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SB545		General Semiconductor	SCHOTTKY BARRIER RECTIFIER		Original	PDF

SB545 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
SB545 Abstract: No abstract text available Text: SB 545 SCHOTTKY DIE SPECIFICATION General Description: 45 V 5 A 5Standard □Low VF， TYPE: SB545 (5Single □Dual) Anode SYM Spec. Limit VRRM 45 Volt IFAV 5 Amp VF MAX 0.520 Volt IR MAX 0.200 mA Nonrepetitive Peak Surge Current IFSM 150 Amp Operating Junction Temperature	Original	PDF	SB545 62mil) SB545
SB545 Abstract: SB5100E-G sb5100e DA121073-150 SB520E-G 550E 560E Text: Low VF/ESD Leaded Schottky Barrier Rectifiers SB520E-G thru SB5100E-G "-G" : RoHS Device Voltage Range: 20 to 100 V Current: 5.0 A FEATURES DO-201AD • Low drop down voltage • 5.0A operation at T A =75°C with no thermal runaway • For use in low voltage, high frequency invertors free	Original	PDF	SB520E-G SB5100E-G DO-201AD IEC61000-4-2 UL94-V0 MIL-STD-750 50mVp-p MDS0906005A SB550E SB545 SB5100E-G sb5100e DA121073-150 550E 560E
Untitled Abstract: No abstract text available Text: Comchip ESD Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB520E-G Thru. SB5100E-G Voltage: 20 to 100 V Current: 5.0 A RoHS Device DO-201AD Features -Low drop down voltage. -5.0A operation at TA=75°C with no thermal runaway. -For use in low voltage, high frequency invertors free	Original	PDF	SB520E-G SB5100E-G DO-201AD IEC6100-4-2 UL94-V0 MIL-STD-750 Method60E SB580E SB5100E
SB545E-G Abstract: SB520E-G SB550E-G SB560E-G SB580E-G SB5100E-G Text: Comchip ESD Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB520E-G Thru. SB5100E-G Voltage: 20 to 100 V Current: 5.0 A RoHS Device DO-201AD Features -Low drop down voltage. -5.0A operation at TA=75°C with no thermal runaway. -For use in low voltage, high frequency invertors free	Original	PDF	SB520E-G SB5100E-G DO-201AD IEC6100-4-2 UL94-V0 MIL-STD-750 B560E SB580E SB5100E SB545E-G SB550E-G SB560E-G SB580E-G SB5100E-G
SB550-G Abstract: SB545-G SB520-G SB560-G SB580-G SB5100-G 5100G Text: Comchip Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB520-G Thru. SB5100-G Voltage: 20 to 100 V Current: 5.0 A RoHS Device DO-201AD Features -Low drop down voltage. 1.0 25.4 Min. -Metal-Semiconductor junction with guard ring 0.210(5.3) 0.189(4.8)	Original	PDF	SB520-G SB5100-G DO-201AD UL94-V0 MIL-STD-750 45B-G SB550B-G SB560B-G SB580B-G SB550-G SB545-G SB560-G SB580-G SB5100-G 5100G
Untitled Abstract: No abstract text available Text: SB 545 SCHOTTKY DIE SPECIFICATION General Description: 45 V 5 A 5Standard □Low VF， ELECTRICAL CHARACTERISTICS SYM DC Blocking Voltage: Ir=1mA(for wafer form) VRRM Ir=0.5mA (for dice form) Average Rectified Forward Current IFAV Maximum Instantaneous Forward Voltage	Original	PDF	SB545 96mil)
SB545 Abstract: No abstract text available Text: Comchip Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB520-G Thru. SB5100-G Voltage: 20 to 100 V Current: 5.0 A RoHS Device DO-201AD Features -Low drop down voltage. -Metal-Semiconductor junction with guard ring 1.0 25.4 Min. 0.210(5.3) 0.189(4.8)	Original	PDF	SB520-G SB5100-G DO-201AD UL94-V0 MIL-STD-750 SB550B-G SB560B-G SB580B-G SB5100B-G SB545