SB TRANSISTORS Search Results

SB TRANSISTORS Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

SB TRANSISTORS Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
ISO ultrasonic sensor standards symbols Abstract: automatic brake failure indicator and engine heating alarm ir remote control ROBOt project report omron plc CQM1H CPU 51 dip switch selection project report on pick and place robot simple pick and place robotic arm cylindrical robot arm omron hmi ccs c pt100 DRT2-MD32ML Text: Industrial Automation Products SB IAMSG-4 2005 OmronElectronics LLC Printed in the U.S.A. 1/05/30M, 10M Master Selection Guide PHOTOELECTRIC SENSORS AMPLIFIED PHOTOMICROSENSORS PROXIMITY SENSORS LIMIT SWITCHES OTHER SENSOR SOLUTIONS PUSHBUTTONS, SWITCHES AND PILOT	Original	iF-06 P7LF-06 P7LF-06 PFP-100N PFP-50N 1/05/30M, ISO ultrasonic sensor standards symbols automatic brake failure indicator and engine heating alarm ir remote control ROBOt project report omron plc CQM1H CPU 51 dip switch selection project report on pick and place robot simple pick and place robotic arm cylindrical robot arm omron hmi ccs c pt100 DRT2-MD32ML	PDF
ON SEMICONDUCTOR 613 Abstract: metal oxide in capacitor Text: 0.7µ µm 5V CMOS Process ID: SA/SB [C08n] Applications Main Process Flow • Mixed signal embedded systems / • N Substrate systems on a chip SOC . • Twin Wells • High precision mixed signal circuits.	Original		PDF
Untitled Abstract: No abstract text available Text: Transistors Low Frequency Transistor 20V, 5A 2 SB 1386 / 2 SB 1412 / 2 SB 1326 / 2 SB 1436 • E x te rn a l dim ensions (Units: mm) •F e a tu re s 1) LOW VcE(sat). 2SB1412 2SB1386 VcE(sai) = -0 .3 5 V (Typ.) 2 ^2 6 .5 ± 0 .2 (\|C/ \| B = - 4 A / - 0 . 1 A )	OCR Scan	2SB1412 2SB1386 2SD2118 2SD2166. SC-62 3B1326/2SB1436	PDF
2SB1233 Abstract: 2SB1233A Text: Power Transistors 2 SB 1233 , 2 SB 1233 A 2SB 1233, 2SB1233A Silicon PNP Epitaxial Planar Type Package Dimensions P&wer Amplifier Unit : mm • Features • High co llector-em itter voltage 3.7max. 7.3max. V ceo 0.9 ± 0 . 1 O.Smax.- • Wide area of safety operation (ASO)	OCR Scan	2SB1233, 2SB1233A 2SB1233 2SB1233A	PDF
video output transistor Abstract: VP401 transistor 2sd1878 2SD1878 video output transistors Text: Discrete Devices for Monitors Principal Process Technologies—Features/Functions V ideo output transistors [FB E T /L SB T ] D ouble-layer electrode structure for high fT, low capacitance and high w ithstand voltage. H orizontal deflection output transistors	OCR Scan	/VP503 \VP401 2SD1878/9 2S01884/5 2SD1876/7 2S0188Z/3 video output transistor VP401 transistor 2sd1878 2SD1878 video output transistors	PDF
UC493 Abstract: UC493AC unitrode Applications Note U-96A 3.9V ZENER DIODE unitrode Applications Note uc493a UC494 Text: 9347963 UNITRODE CORP 92D 09860 D T-SB-//-3I LINEAR INTEGRATED CIRCUITS u g g ft Jjggjftg Advanced Regulating Pulse Width Modulators UC495A UC495B UC495AC UC495BC D • TBHÖSII QQÜTÖbQ 7 ■UNI FEATURES • Dual uncommitted 40V, 200mA output transistors	OCR Scan	UC495A UC495B UC495AC UC495BC 200mA UC493A/UC495B: UC495A/UC495B: cUC495BC UC493 UC493AC unitrode Applications Note U-96A 3.9V ZENER DIODE unitrode Applications Note uc493a UC494	PDF
Untitled Abstract: No abstract text available Text: I I b^E D • bb53T31 DD27^Sb 43H H A P X JA100 JA101 A PNP SMALL-SIGNAL TRANSISTORS PNP small-signal transistors in TO-92 envelopes, recommended for general purpose amplifier applications. The complementary types are the JC500 and JC501 respectively. QUICK REFERENCE DATA	OCR Scan	bb53T31 JA100 JA101 JC500 JC501 0027T5fi	PDF
Untitled Abstract: No abstract text available Text: HARRIS SEHICOND BD242, BD242A, BD242B, BD242C Sb E D • 43D2271 SECTOR File Number 0G4Dbb4 672 SGb « H A S Epitaxial-Base Silicon P-N-P VERSAWATT Transistors For Power-Amplif ier and High-Speed-Switching Applications Features: ■ 40 W at 2S°C case temperature	OCR Scan	BD242, BD242A, BD242B, BD242C 43D2271 BD241, BD241A, BD241B, BD241C	PDF
2SC2570 Abstract: 2sc2570 transistor transistor 2sc2570 NE02103 NE02133 2sc1560 ic 2SC2570 NE02132 NE02100 NE02135 Text: NEC/ bM27414 0DDB354 SB? « N E C C 5bE D CALIFORNIA NEC T 3 V -2 3 NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH INSERTION GAIN: 18.5 dB at 500 MHz The NE021 series of NPN silicon transistors provides eco	OCR Scan	bM27414 QDDB354 T3V-23 NE021 2SC2570 2sc2570 transistor transistor 2sc2570 NE02103 NE02133 2sc1560 ic 2SC2570 NE02132 NE02100 NE02135	PDF
2n6673 Abstract: 2n6671 RCA8767 Text: 7=35 ~ / 9 2N6671, 2N6672, 2N6673 HARRIS SEMICON] SECTOR File Number Sb E D 1090 43 D2 271 GOMObOfl 7fl7 « H A S 5-A SwitchM a* Power Transistors T -3 3 -3 1 High-Voltage N-P-N Types for Off-Line Power Supplies and Other High-Voltage Switching Applications	OCR Scan	2N6671, 2N6672, 2N6673 T0-204AA T0-204AA 2N6673* 2n6671 RCA8767	PDF
BDT65CF Abstract: BDT65AF 65AF BDT64AF BDT64BF BDT64CF BDT64F BDT65BF BDT65F BDT65C Text: BDT65F; BDT65AF ^^BDT65BF; BDT65CF PHILIPS INTERNATIONAL SbìT] I 7110ä 2b 00432^0 M S ’ì I I P H I N T - 3 3 ~z°l SILICON DARLINGTON POWER TRANSISTORS N PN silicon darlington power transistors in a S O T 1 8 6 envelope with an electrically insulated mounting	OCR Scan	BDT65F; BDT65AF BDT65BF; BDT65CF aSOT186 BDT64F, BDT64AF, BDT64BF BDT64CF. BDT65F BDT65CF BDT65AF 65AF BDT64AF BDT64CF BDT64F BDT65BF BDT65C	PDF
Untitled Abstract: No abstract text available Text: TP2010L, TP2410L P-Channel Enhancement-Mode MOS Transistors SB;SSä PRODUCT SUMMARY TO-92 TO-226AA V(BR)DSS PART NUMBER V BOTTOM VIEW *D (A) TP2010L -200 10 -0.18 TP2410L -240 10 -0.18 ,1 2 3 . 1 SOURCE 2 GATE 3 DRAIN Performance Curves: VPDV24 1^3 I 1—	OCR Scan	TP2010L, TP2410L O-226AA) TP2010L VPDV24	PDF
2SB1255 Abstract: 2SB1155 2SD1706 Text: Power Transistors 2 SB 1 1 5 5 2SB1155 Silicon PNP Epitaxial Planar Type Package Dim ensions Pow er Switching C om plem entary Pair with 2 S D 1 706 Unit : mm 5 2max. . 15.5max. • Features 6.9min. 1 ¡ -fe r z i- • Low collector-eim itter saturation voltage VcE<sao	OCR Scan	2SB1155 2SD1706 2SB1255) ooib22ci 2SB1255 2SB1155 2SD1706	PDF
Untitled Abstract: No abstract text available Text: m bZMTflSb GGlS^Sb 3 ^ • HITE MITSUBISHI ELEK LINEAR MITSUBISHI ICs (AV COMMON) M54573L bSE 1> TUNER BAND DECODER/DRIVER DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M54573L is a semiconductor integrated circuit capable of three-band switching in TV and VCR tuners.	OCR Scan	M54573L M54573L	PDF

RCA 40251 Abstract: 2N3055H 2N3055H RCA 2n6254 2N6253 2N6371 40251 2N637 2N6371 RCA rca 2n6254 Text: SEMELAB y i ï i l Sb' POWER T R A N S IS T O R S 2N3055H, 2N 6253, 2N 6254, 2N6371, 40251 H om etaxial*Base High-Power Silicon N-P-N Transistors • 2 N 6 2 5 4 : premium type from 2N3055H family Rugged, Broadly Applicable Devices For Industrial and Commercial Use	OCR Scan	2N3055H, 2N6253, 2N6254, 2N6371, 2N3055H 2N6253 2N6251 RCA 40251 2N3055H RCA 2n6254 2N6371 40251 2N637 2N6371 RCA rca 2n6254	PDF
FET BFW10 Abstract: BFW10 pins OF FET BFW11 OF FET BFW10 BFW10 FET BSV81 BF327 BFW10 FET transistor BFS28 FET BFW11 Text: Transistors silicon n-channel field effect transistors Type No. Drawing reference book 1 parts 1 and 2 e c 3 O VDB v SB V (V ) M axim um Ratings - VgBM 1dm Tj m ax. (V ) (m A) (°C ) Special Features Pt„t rOSion) 1'DStoffl at 25°C (mW) (£2) (£ï) INSULATED GATE FET (MOST)	OCR Scan	BSV81 h--22-> crt6-25 FET BFW10 BFW10 pins OF FET BFW11 OF FET BFW10 BFW10 FET BF327 BFW10 FET transistor BFS28 FET BFW11	PDF
MJE13007E Abstract: JE13006 MJE13Q07 JE13007 Text: MOTOROLA SC XSTRS/R 1EE F D I b3b72S4 a G fl SB T S ê \| T - 33-13 MOTOROLA MJE13006 MJE13007 SEMICONDUCTOR TECHNICAL DATA D esigners Data, Sheet 8 AM PERE NPN SILICON POWER TRANSISTORS 3 00 and 4 0 0 V O L T S 80 W ATTS SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS	OCR Scan	b3b72S4 MJE13006 MJE13007 MJE13007E JE13006 MJE13Q07 JE13007	PDF
transistor ecg246 Abstract: ECG251 ECG2317 ECG252 ECG246 ecg 126 transistor ECG260 ecg253 ECG245 ECG247 Text: PH IL IP S E C G INC SME D • Darlington Power Transistors Description NPN PIMP Collector To Base Volts BVc b O Emitter To Base Volts BVEBO Collector To Emitter Volts b v Ceo Max. Collector Current 1C Amps bb SB ^ f l GO OT l b B TbS m Z C G Maximum Ratings at T c =25°C	OCR Scan	bbS312fl ECG243 ECG244 ECG245 ECG246 ECG247 ECG248 ECG249 ECG250 ECG251 transistor ecg246 ECG2317 ECG252 ecg 126 transistor ECG260 ecg253	PDF
B806 Abstract: No abstract text available Text: NEC S IL IC O N T R A N S IS T O R S ELECTRON DEVICE 2 SB 8 0 5 ,2 S B 80 6 PNP SILICON EPITAXIAL TRANSISTORS POWER M IN I MOLD DESCRIPTION The 2SB805 and 2SB806 are designed fo r audio frequency power am p lifie r application, especially in H yb rid Integrated Circuits.	OCR Scan	2SB805, 2SB806 2SB805 2SB806 2SD1006 2SB806) 2SB805) 2SD1007 B806	PDF
30BF Abstract: TIP30DF TIP3 TIP29AF TIP29BF TIP29CF TIP29DF TIP29F TIP30AF TIP30BF Text: TIP30F TIP30AF; TIP30BF TIP30CF: TIP30DF PHILIPS INTERNATIONAL Sb E D I 7110ä2b 00M34bb 700 « P H I N SILICON EPITAXIAL POWER TRANSISTORS T - & - IT PNP silicon power transistor in a S O T 186 envelope w ith an electrically insulated mounting base, for use in audio output stages and for general purpose am plifier and high-speed switching applications.	OCR Scan	TIP30F TIP30AF; TIP30BF TIP30CF: TIP30DF 00M34bb T-33-IT OT186 TIP29F, TIP29AF, 30BF TIP30DF TIP3 TIP29AF TIP29BF TIP29CF TIP29DF TIP29F TIP30AF TIP30BF	PDF
T-43-25 Abstract: No abstract text available Text: GEC PLESSEY SEMICONDS 43E D MM 37bôS22 D O I B ^ Û 3 BIPL SB " T '4 3 >-Z<5 GEC PLESSEY S E M I C O N D U C T O R S SL2363 & SL2364 VERY HIGH PERFORMANCE TRANSISTOR ARRAYS The SL2363C and SL2364C are arrays of transistors internally connected to torm a dual long-tailed pair with tail	OCR Scan	SL2363 SL2364 SL2363C SL2364C 37bflS2S T-43-25 200mW SL2364 T-43-25	PDF
SL3045C Abstract: No abstract text available Text: GEC PLESSEY SEMICONDS 43E D • 37böS22 0D134ÖD H M Pl-SB " T m - i S GEC PLESSEY ¡ S E M I C O N D U C T O R S SL3245 3GHz NPN TRANSISTOR ARRAY The SL3245 is a m onolithic array of five high frequency low current NPN transistors. The SL3245 consists of 3 isolated	OCR Scan	0D134Ã SL3245 SL3245 SL3045C SL3145 60MHz	PDF
BD977 Abstract: BD975 Q62702-D966 BD 976 BD979 QQG4457 Q62702-D964 BD 202 transistors Text: T> m fl23 Sb 05 QQ044SS 0 « S I E 6 r 1 NPN Silicon Darlington Transistors SSC SIEMENS AKTIENGESELLSCHAF T-33-29 BD 975 BD 977 0 - BD 979 ^ 25 BD 975, BD 977, and BD 979 are epitaxial NPN silicon planar darlington transistors in plastic package similar to TO 202. These darlington transistors aredesigned for relay drivers	OCR Scan	fl23Sb05 T-33-29 Q62702-D962 Q62702-D964 Q62702-D966 BD975 BD977 -BD979 BD 976 BD979 QQG4457 BD 202 transistors	PDF
RCA 2N5322 Abstract: rca 2n3772 RCA-1N1763A RCA-2N2102 CA3085-SERIES 1N1763 RCA-2N5322 voltage regulator ca3085a ca3085a40v 1N1763A Text: CA3085, CA3085A CA3085B SB HARRIS S E M I C O N D U C T O R Positive Voltage Regulators from 1.7V to 46V at Currents Up to 100mA May 1992 Features Description • Up to 100mA Output Current The CA3085, CA3085A, and CA3085B are silicon monolithic Integrated	OCR Scan	CA3085, CA3085A CA3085B 100mA CA3085A, CA3085B CA3085 RCA-2N3772 RCA-1N1763A RCA 2N5322 rca 2n3772 RCA-2N2102 CA3085-SERIES 1N1763 RCA-2N5322 voltage regulator ca3085a ca3085a40v 1N1763A	PDF

SB TRANSISTORS Search Results

SB TRANSISTORS Result Highlights (5)

SB TRANSISTORS Datasheets Context Search

ISO ultrasonic sensor standards symbols

ON SEMICONDUCTOR 613

Untitled

2SB1233

video output transistor

UC493

Untitled

Untitled

2SC2570

2n6673

BDT65CF

Untitled

2SB1255

Untitled

RCA 40251

FET BFW10

MJE13007E

transistor ecg246

B806

30BF

T-43-25

SL3045C

BD977

RCA 2N5322