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    SAMSUNG CNJ 23 Search Results

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    H210TC

    Abstract: TYPE NAME C8
    Text: SMS-51-L-SFT C8-1 JUNE. 15. 1998 Approved by: KyoYoungJIN Checked by: Kim, MyeongKee I Issued by : J ¡nBaek Song O' B . S O tJ G i SPECIFICATION MODEL: H210TC Surface Acoustic Wave Filter SAMSUNG ELECTRO-MECHANICS CO., LTD. 314. MAETAN-3D0NG, PALDAL-KU SUWON-SI, KYUNGKI-DO, KOREA


    OCR Scan     		PDF SMS-51-L-SFT H210TC 028ffH210TC 028WH210TC H210TC TYPE NAME C8

    Untitled

    Abstract: No abstract text available
    Text: KS88C4400 Microcontroll er ELECTRONICS DESCRIPTION The KS88C4400 single-chip 8-bit microcontroller is fabricated using a highly advanced CMOS process. With 42 I/O ports, UART, two 8-bit timers, two 16-bit timer/counters, PWM with data capture, A/D converter. KS88C4400


    OCR Scan     		PDF KS88C4400 KS88C4400 16-bit 66-ps 18-MHz 1040-byte 64-Kbyte

    KM23C4100

    Abstract: No abstract text available
    Text: KM23C4100 CMOS MASK ROM 4M-BH 512K x 8/256K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 524,288 x 8 Word Mode: 262,144 x 16 • Fast access time: 150ns (max.) • Supply voltage: single + 5V • Current consumption


    OCR Scan     		PDF KM23C4100 8/256K 150ns 40-pin 44-pin KM23C4100 23C4100 KM23C4100)

    Untitled

    Abstract: No abstract text available
    Text: KMM372V120CJ/CT DRAM MODULE KMM372V120CJ/CT Fast Page Mode 1Mx72 DRAM DIMM with ECC, 1K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372V120C is a 1M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372V120C consists of eighteen


    OCR Scan     		PDF KMM372V120CJ/CT KMM372V120CJ/CT 1Mx72 KMM372V120C 300mil 48pin 168-pin cycles/16ms 1000mil)

    48c8000

    Abstract: No abstract text available
    Text: DRAM M ODULE KM M 3 72C80 8 3B K/B S Buffered 8Mx72 DIMM (8Mx8 base) Revision 0.0 Sept. 1997 DRAM M ODULE KM M 3 72C80( 8) 3B K/B S Revi si on Hi st or y Version 0.0 (Sept, 1 997) Removed two AC parameters t CACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.


    OCR Scan     		PDF 72C80( 8Mx72 KMM372C80 8Mx72bits 400mil 48c8000

    62256B

    Abstract: ic 62256 62256 KM62256 sram 62256
    Text: KM62256BLPI/BLGI CMOS SRAM 32,768 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION T h e K M 6 2 2 5 6 B L P I/B L G I is a 2 6 2 ,1 4 4 -b it h ig h -s p e e d • In du s tria l T e m p e ra tu re Range: - 40 to 8 5 °C • Fast A cc e s s Tim e: 70, 100ns M ax.


    OCR Scan     		PDF KM62256BLPI/BLGI 100ns 62256B KIVI62256BLGI: 28-pin ic 62256 62256 KM62256 sram 62256

    KS0164

    Abstract: samsung schematics processor KS0174
    Text: KS0164 Multimedia Cl Cf*1 ELECTRONICS OVERVIEW The KS0164 wavetable synthesizer chip represents the state-ofthe-art in multimedia audio technology. The KS0164 combines a high-quality 32-voice wavetable synthesizer, a powerful 16-bit CPU and MPU-401 compatibility into a single chip.


    OCR Scan     		PDF KS0164 KS0164 32-voice 16-bit MPU-401 16-bit, samsung schematics processor KS0174

    Untitled

    Abstract: No abstract text available
    Text: KM 71 8V787 1 2 8 K x 1 8 S y n c h r o n o u s SR A M Document Title 1 2 8Kx1 8-Bi t S y n c h r o n o u s B u r s t S R A M , 3. 3V P o w e r D a t a s h e e t s for 1 0 0 T Q F P Revision History Rev. No. H Istorv Draft Date R e m ar k Rev. 0.0 Initial draft


    OCR Scan     		PDF 8V787 1997x 128Kx18 100-TQFP-1420A

    V696

    Abstract: No abstract text available
    Text: KM 7 3 2 V6 96 / L 6 4 K x 3 2 S y n c h r o n o u s SR A M 64Kx32-Bit S y nc hr on o us Pipelined Burst S R A M , 3.3V Power, 2.5V or 3.3V I/O Datasheets for 100 TQFP Revision History R e v .N o . H Is t o r v D r a f t D a te R em ark Rev. 0.0 Initial draft


    OCR Scan     		PDF 64Kx32-Bit 64Kx32 100-T -1420A V696

    xxnx

    Abstract: No abstract text available
    Text: 32Kx36 S y n c h r o n o u s SRAM KM 736V599A/L 32Kx36-Bit Sync hr ono us Pipelined Burst SRAM, 3.3V Power Datasheets for 100TQFP Revision History R e v .N o . H Is to rv Rev.0.0 Initial draft Rev.1.0 Final spec release D r a f t D a te Feb. 18. 1997 May.13. 1997


    OCR Scan     		PDF 736V599A/L 32Kx36 32Kx36-Bit 100TQFP 100-T xxnx

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM366F124AJ KMM366F124AJ EDO Mode without buffer 1Mx64 DRAM DIMM based on 1Mx16, 1K Refresh, 3.3V G EN ERA L D ESCRIPTIO N FEATURES The Samsung KMM366F124AJ is a 1M bit x 64 Dynamic RAM high density memory module. The Samsung KMM366F124AJ consists of four CMOS


    OCR Scan     		PDF KMM366F124AJ 1Mx64 1Mx16, 1Mx16bit 400mil 168-pin 168-pir

    Untitled

    Abstract: No abstract text available
    Text: KM 7 3 2 V5 95 A/ L 3 2 K x 3 2 S y n c h r o n o u s SR A M 32Kx32-Bit S y nc hr on o us Pipelined Burst S R A M , 3.3V Power, 2.5V I/O Datasheets for 100 TQFP Revision History R e v . N o. H I s t or v Draft Data R em ark Rev.0.0 Initial draft Feb. 18. 1997


    OCR Scan     		PDF 32Kx32-Bit 100-TQFP-1420A

    Untitled

    Abstract: No abstract text available
    Text: 3 2 K x 36 S y n c h r o n o u s SR A M KM 7 3 6 V5 8 7 D o c u m e n t T it le 32Kx36-Bit Sync hr ono us Burst S R A M , 3.3V Power Datasheets for 100TQFP R e v is io n H is to r y R e v .N o. H Is to rv D ra ft D a te R e m ark Rev. 0.0 Initial draft Nov. 02. 1996


    OCR Scan     		PDF 32Kx36-Bit 100TQFP -14LSCTRQftHCS -15LSCTRQftHCS

    km44c1000alt

    Abstract: KM44C1000AL-10 samsung hv capacitor
    Text: KM44C1000AL CM OS DRAM 1 M X 4 B it C M OS Dynam ic R A M with F ast Page M ode FEATURES • GENERAL DESCRIPTION P e rfo rm a n c e range: tRAC ¡ tcAC K M 44C 1 000A L- 7 70ns 2 0 ns 13 0n s KM 44C 1 000A L- 8 80ns 2 0 ns 150ns K M 4 4 C 1 0 0 0 A L -1 0


    OCR Scan     		PDF KM44C1000AL KM44C1 KM44C1000AL-10 100ns 130ns 150ns 180ns cycles/128ms 70/80/100ns) km44c1000alt KM44C1000AL-10 samsung hv capacitor