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    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm PDF

    K9F2G08U0C

    Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
    Text: Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage 2H 2010 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		BR-10-ALL-001 K9F2G08U0C K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0 PDF

    K5W1G

    Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION


    Original     		BR-07-ALL-001 K5W1G KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G PDF

    K9HDG08U1A

    Abstract: K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe
    Text: Product Selection Guide LCD, Memory and Storage - 1H 2011 Samsung Semiconductor, Inc Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks


    Original     		BR-11-ALL-001 K9HDG08U1A K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe PDF

    K9F2G08U0B

    Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		BR-09-ALL-001 K9F2G08U0B K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B PDF

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


    Original     		BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B PDF

    samsung 167 fbga

    Abstract: Network Switches K7R640982M K7R323684C K7R160982B K7R161882B K7R161884B K7R163682B K7R163684B K7R320982C
    Text: Samsung QDR II SRAM High-Bandwidth Memory for Advanced Network Equipment Memory Technology Processes Four Times More Data Samsung offers a broad portfolio of Designers of next-generation telecommunications equipment require high-bandwidth memory for the


    Original     		K7R323682C K7R323684C K7R640982M K7R641882M K7R641884M K7R643682M K7R643684M 165-pin DS-09-SRAM-001 samsung 167 fbga Network Switches K7R640982M K7R323684C K7R160982B K7R161882B K7R161884B K7R163682B K7R163684B K7R320982C PDF

    K7M161825A

    Abstract: K7M163625A
    Text: K7M163625A K7M161825A 512Kx36 & 1Mx18 Flow-Through NtRAMTM 18Mb NtRAMTM Specification 100 TQFP with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		K7M163625A K7M161825A 512Kx36 1Mx18 K7M161825A K7M163625A PDF

    Untitled

    Abstract: No abstract text available
    Text: M312L6420DG0 Preliminary 184pin 1U Registered DDR SDRAM Module 512MB DDR SDRAM MODULE 64Mx72 based on 64Mx4 FBGA DDR SDRAM Registered 184pin DIMM 72-bit ECC/Parity Revision 0.0 July. 2002 Rev. 0.0 July. 2002 M312L6420DG0 Preliminary 184pin 1U Registered DDR SDRAM Module


    Original     		M312L6420DG0 184pin 512MB 64Mx72 64Mx4 72-bit PDF

    K4H560438

    Abstract: No abstract text available
    Text: M312L6420DG0 184pin 1U Registered DDR SDRAM Module 512MB DDR SDRAM MODULE 64Mx72 based on 64Mx4 FBGA DDR SDRAM Registered 184pin DIMM 72-bit ECC/Parity Revision 1.0 Dec. 2002 Rev. 1.0 Dec. 2002 M312L6420DG0 184pin 1U Registered DDR SDRAM Module Revision History


    Original     		M312L6420DG0 184pin 512MB 64Mx72 64Mx4 72-bit K4H560438 PDF

    k4h560838 tccd

    Abstract: K4H560838D K4H560838
    Text: M312L6423DG0 184pin 1U Registered DDR SDRAM Module 512MB DDR SDRAM MODULE 64Mx72 based on 32Mx8 FBGA DDR SDRAM Registered 184pin DIMM 72-bit ECC/Parity Revision 1.0 Dec. 2002 Rev. 1.0 Dec. 2002 M312L6423DG0 184pin 1U Registered DDR SDRAM Module Revision History


    Original     		M312L6423DG0 184pin 512MB 64Mx72 32Mx8 72-bit k4h560838 tccd K4H560838D K4H560838 PDF

    Untitled

    Abstract: No abstract text available
    Text: M312L6423DG0 Preliminary 184pin 1U Registered DDR SDRAM Module 512MB DDR SDRAM MODULE 64Mx72 based on 32Mx8 FBGA DDR SDRAM Registered 184pin DIMM 72-bit ECC/Parity Revision 0.0 July. 2002 Rev. 0.0 July. 2002 M312L6423DG0 Preliminary 184pin 1U Registered DDR SDRAM Module


    Original     		M312L6423DG0 184pin 512MB 64Mx72 32Mx8 72-bit PDF

    k4h560838 tccd

    Abstract: No abstract text available
    Text: M312L3223DG0 Preliminary 184pin 1U Registered DDR SDRAM Module 256MB DDR SDRAM MODULE 32Mx72 based on 32Mx8 FBGA DDR SDRAM Registered 184pin DIMM 72-bit ECC/Parity Revision 0.0 July. 2002 Rev. 0.0 July. 2002 M312L3223DG0 Preliminary 184pin 1U Registered DDR SDRAM Module


    Original     		M312L3223DG0 184pin 256MB 32Mx72 32Mx8 72-bit k4h560838 tccd PDF

    DM 024

    Abstract: T37z DDR266 DDR333 WV3EG265M72EFSU-D4 512mb sodimm pc2700 200 pin samsung
    Text: White Electronic Designs WV3EG265M72EFSU-D4 ADVANCED* 1GB – 2x64Mx72 DDR SDRAM, UNBUFFERED, PLL, FBGA FEATURES DESCRIPTION Unbuffered 200-pin SO-DIMM , small-outline, dualin-line module The WV3EG265M72EFSU is a 2x64Mx72 Double Data Rate SDRAM memory module based on 512Mb DDR


    Original     		WV3EG265M72EFSU-D4 2x64Mx72 200-pin WV3EG265M72EFSU 512Mb 64Mx8 PC-2100, PC-2700 133MHz, DM 024 T37z DDR266 DDR333 WV3EG265M72EFSU-D4 512mb sodimm pc2700 200 pin samsung PDF

    Untitled

    Abstract: No abstract text available
    Text: K7N323601M K7N321801M 1Mx36 & 2Mx18 Pipelined NtRAMTM 36Mb NtRAMTM Specification 100TQFP / 165FBGA with Pb only INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		K7N323601M K7N321801M 1Mx36 2Mx18 100TQFP 165FBGA a00-TQFP-1420A PDF

    K7N163645A

    Abstract: K7N161845A
    Text: K7N163645A K7N161845A 512Kx36 & 1Mx18 Pipelined NtRAMTM 18Mb NtRAMTM Specification 100 TQFP & 165FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		K7N163645A K7N161845A 512Kx36 1Mx18 165FBGA 11x15 K7N163645A K7N161845A PDF

    K7N323645M

    Abstract: K7M321825M-QC75 K7N321845M K7N3236
    Text: K7N323645M K7N321845M 1Mx36 & 2Mx18 Pipelined NtRAMTM 36Mb NtRAMTM Specification 100TQFP / 165FBGA with Pb only INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		K7N323645M K7N321845M 1Mx36 2Mx18 100TQFP 165FBGA K7N323645M K7M321825M-QC75 K7N321845M K7N3236 PDF

    NC-2H

    Abstract: K7A161800A K7A163200A K7A163600A
    Text: K7A163600A K7A163200A K7A161800A PRELIMINARY 512Kx36/x32 & 1Mx18 Synchronous SRAM Document Title 512Kx36/x32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. 0.0 0.1 0.2 0.3 History Draft Date Remark Initial draft 1. Add JTAG Scan Order


    Original     		K7A163600A K7A163200A K7A161800A 512Kx36/x32 1Mx18 1Mx18-Bit 165FBGA K7A1636 NC-2H K7A161800A K7A163200A K7A163600A PDF

    NC-2H

    Abstract: K7B161825A K7B163225A K7B163625A
    Text: K7B163625A K7B163225A K7B161825A Preliminary 512Kx36/32 & 1Mx18 Synchronous SRAM Document Title 512Kx36/x32 & 1Mx18-Bit Synchronous Burst SRAM Revision History Rev. No. 0.0 0.1 0.2 History 1. Initial draft 1. Add JTAG Scan Order 1. Add x32 org and industrial temperature .


    Original     		K7B163625A K7B163225A K7B161825A 512Kx36/32 1Mx18 512Kx36/x32 1Mx18-Bit 165FBGA NC-2H K7B161825A K7B163225A K7B163625A PDF

    K7N161801A

    Abstract: K7N163601A
    Text: K7N163601A K7N161801A 512Kx36 & 1Mx18 Pipelined NtRAMTM 18Mb NtRAMTM Specification 100 TQFP with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		K7N163601A K7N161801A 512Kx36 1Mx18 11x15 K7N161801A K7N163601A PDF

    K7M161825A

    Abstract: K7M163625A
    Text: K7M163625A K7M161825A 512Kx36 & 1Mx18 Flow-Through NtRAMTM Document Title 512Kx36 & 1Mx18-Bit Flow Through NtRAMTM Revision History Rev. No. 0.0 0.1 0.2 0.3 History Draft Date Remark 1. 1. 1. 2. 1. 2. Feb. 23. 2001 May. 10. 2001 Aug. 03. 2001 Preliminary Preliminary


    Original     		K7M163625A K7M161825A 512Kx36 1Mx18 1Mx18-Bit 165FBGA 119BGA K7M161825A K7M163625A PDF

    K7M161825A

    Abstract: K7M163625A
    Text: K7M163625A K7M163225A K7M161825A 512Kx36/32 & 1Mx18 Flow-Through NtRAMTM Document Title 512Kx36/32 & 1Mx18-Bit Flow Through NtRAMTM Revision History Rev. No. 0.0 0.1 0.2 0.3 History Draft Date Remark 1. 1. 1. 2. 1. 2. Feb. 23. 2001 May. 10. 2001 Aug. 03. 2001


    Original     		K7M163625A K7M163225A K7M161825A 512Kx36/32 1Mx18 1Mx18-Bit 165FBGA 119BGA K7M161825A K7M163625A PDF

    DM 024

    Abstract: DDR266 DDR333 DDR400 PC3200 W3EG264M64EFSU-D4
    Text: White Electronic Designs W3EG264M64EFSU-D4 PRELIMINARY* 1GB – 2x64Mx64 DDR SDRAM, UNBUFFERED, FBGA FEATURES DESCRIPTION „ Fast data transfer rate: PC-2100, PC-2700 and PC3200 „ Clock speeds of 133 MHz, 166 MHz and 200MHz „ Supports ECC error detection and correction


    Original     		W3EG264M64EFSU-D4 2x64Mx64 PC-2100, PC-2700 PC3200 W3EG264M64EFSU 512Mb 64Mx8 200MHz DM 024 DDR266 DDR333 DDR400 PC3200 W3EG264M64EFSU-D4 PDF

    Untitled

    Abstract: No abstract text available
    Text: K7N163601A K7N163201A K7N161801A 512Kx36/32 & 1Mx18 Pipelined NtRAMTM Document Title 512Kx36/32 & 1Mx18-Bit Pipelined NtRAMTM Revision History Rev. No. 0.0 0.1 0.2 0.3 1.0 Draft Date History Remark 1. Initial document. 1. Add JTAG Scan Order 1. Add x32 org and industrial temperature .


    Original     		K7N163601A K7N163201A K7N161801A 512Kx36/32 1Mx18 1Mx18-Bit 165FBGA K7N1636 PDF