Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SAF TRANSISTOR Search Results

    SAF TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SAF TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SAF1005

    Abstract: SAF1007 fpm 250 airflow SAF1025 SAF1006 Alarm Saf SAF transistor AIRSTREAM SAF1026 Warren GV
    Text: SAF Series Air Velocity Switch The solid state SAF Series airflow switch assures dependable thermal control and protection for air cooled systems. The SAF Series advantages include: Š Š Š Š Š Š Š Can drive logic circuits, audible/optical alarms and magnetic relays


    Original     		PDF Series/SAF1025 SAF1005 SAF1025 SAF1006 SAF1026 SAF1007 SAF1027 SAF1008 SAF1028 SAF1005 SAF1007 fpm 250 airflow SAF1025 SAF1006 Alarm Saf SAF transistor AIRSTREAM SAF1026 Warren GV

    R25F

    Abstract: SAF-C165-L25M C165 SAB-C165-L25F SAB-C165-L25M SIEMENS T36
    Text: Microcomputer Components 16-Bit CMOS Single-Chip Microcontroller 3 V Operation C165 Specification 01.96 Advance Information C165 Revision History: 01.96 3 Volt Specification Previous Releases: 07.95 Page Subjects changes since last revision 2 SAF-C165-L25M added.


    Original     		PDF 16-Bit SAF-C165-L25M D-81541 R25F C165 SAB-C165-L25F SAB-C165-L25M SIEMENS T36

    smd transistor A6 3

    Abstract: 5962R9671901TRC 5962R9671901TXC ACTS245DTR ACTS245KTR ACTS245T b3 smd transistor
    Text: ACTS245T Data Sheet July 1999 Radiation Hardened Octal Non-Inverting Bidirectional Bus Transceiver Intersil’s Satellite Applications FlowTM SAF devices are fully tested and guaranteed to 100kRAD Total Dose. These QML Class T devices are processed to a standard flow intended


    Original     		PDF ACTS245T 100kRAD ACTS245T MIL-PRF-38535 smd transistor A6 3 5962R9671901TRC 5962R9671901TXC ACTS245DTR ACTS245KTR b3 smd transistor

    4606 SMD

    Abstract: AL 4606 SI 4606 HS1-5104ARH-T HS-5104ARH-T HS9-5104ARH-T DIELECTRICALLY ISOLATED INTERSIL BIPOLAR HS5104
    Text: HS-5104ARH-T Data Sheet July 1999 Radiation Hardened Low Noise Quad Operational Amplifier Intersil‘s Satellite Applications FlowTM SAF devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow


    Original     		PDF HS-5104ARH-T 100kRAD HS-5104ARH-T 4606 SMD AL 4606 SI 4606 HS1-5104ARH-T HS9-5104ARH-T DIELECTRICALLY ISOLATED INTERSIL BIPOLAR HS5104

    smd transistor 2a3

    Abstract: Transistor SMD Y1 y1 smd transistor smd transistor y1 smd transistor 2A1 y2 smd transistor transistor smd Y2 smd 1a2 diagram of ic 1a2 HCTS244KTR
    Text: HCTS244T Data Sheet July 1999 Radiation Hardened Octal Buffer/Line Driver, Three-State Intersil‘s Satellite Applications FlowTM SAF devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow


    Original     		PDF HCTS244T 100kRAD HCTS244T smd transistor 2a3 Transistor SMD Y1 y1 smd transistor smd transistor y1 smd transistor 2A1 y2 smd transistor transistor smd Y2 smd 1a2 diagram of ic 1a2 HCTS244KTR

    5962R9861301TCC

    Abstract: 5962R9861301TXC HS1-139RH-T HS-139RH-T HS9-139RH-T
    Text: HS-139RH-T TM Data Sheet July 1999 Radiation Hardened Quad Voltage Comparator FN4646.1 Features • QML Qualified Per MIL-PRF-38535 Requirements Intersil’s Satellite Applications Flow TM SAF devices are fully tested and guaranteed to 100kRAD total dose. These


    Original     		PDF HS-139RH-T FN4646 MIL-PRF-38535 100kRAD HS-139RH-T 5962R9861301TCC 5962R9861301TXC HS1-139RH-T HS9-139RH-T

    HCS373DTR

    Abstract: HCS373KTR HCS373T
    Text: HCS373T TM Data Sheet July 1999 Radiation Hardened Octal Transparent Latch, Three-State FN4617.1 Features • QML Class T, Per MIL-PRF-38535 Intersil’s Satellite Applications FlowTM SAF devices are fully tested and guaranteed to 100kRAD total dose. These QML


    Original     		PDF HCS373T FN4617 MIL-PRF-38535 100kRAD HCS373T HCS373DTR HCS373KTR

    5962R9861301TCC

    Abstract: 5962R9861301TXC HS1-139RH-T HS-139RH-T HS9-139RH-T
    Text: HS-139RH-T Data Sheet Radiation Hardened Quad Voltage Comparator July 1999 File Number 4646.1 Features • QML Qualified Per MIL-PRF-38535 Requirements Intersil’s Satellite Applications FlowTM SAF devices are fully tested and guaranteed to 100kRAD total dose. These QML


    Original     		PDF HS-139RH-T MIL-PRF-38535 100kRAD HS-139RH-T 5962R9861301TCC 5962R9861301TXC HS1-139RH-T HS9-139RH-T

    smd R2N

    Abstract: smd diode S1N 5962R9578201TCC 5962R9578201TXC HCS74DTR HCS74KTR HCS74T
    Text: HCS74T Data Sheet July 1999 Radiation Hardened Dual-D Flip-Flop with Set and Reset Intersil’s Satellite Applications FlowTM SAF devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended


    Original     		PDF HCS74T 100kRAD HCS74T smd R2N smd diode S1N 5962R9578201TCC 5962R9578201TXC HCS74DTR HCS74KTR

    d143 T transistor

    Abstract: transistor d143 5962R9581201QCC HI302
    Text: Radiation Hardened CMOS Dual DPST Analog Switch HS-302RH, HS-302EH Features Intersil’s Satellite Applications Flow SAF devices are fully tested and guaranteed to 100kRAD Total Dose. These QML Class T devices are processed to a standard flow intended to


    Original     		PDF HS-302RH, HS-302EH 100kRAD HS-302EH FN4603 d143 T transistor transistor d143 5962R9581201QCC HI302

    EN6101

    Abstract: EN610-1
    Text: Ordering number:EN6101 NPN Triple Diffused Planar Silicon Transistor 2SC5443 SAf/YO Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed tplOOns typ . • High breakdown voltage (VCBo=l500V ). • High reliability (Adoption of HVP process).


    OCR Scan     		PDF EN6101 2SC5443 l500V 2048B 2SC5443] n707b D0233fciE EN6101 EN610-1

    transistor 800v

    Abstract: 2SC3460 DD201 fll100
    Text: O rdering num ber: EN 1594B 2SC3460 N0.1594B NPN Triple Diffused Planar Silicon Transistor SAfÊYO i 800V/6A Switching Regulator Applications Features . High breakdown voltage and high reliability. . Fast switching speed t^: O.ljis typ. . Wide ASO. . Adoption of MBIT process.


    OCR Scan     		PDF 1594B l594B 2SC3460 00V/6A 300ps DD2011D transistor 800v 2SC3460 DD201 fll100

    2sc3074

    Abstract: No abstract text available
    Text: TO SH IBA 2SC3074 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3074 HIGH CURRENT SWITCHING APPLICATIONS • • • Low Collector Saturation Voltage : VCE (saf) = 0.4 V (Max.) (at In = 3 A) High Speed Switching Time : tstg = 1.0 /us (Typ.)


    OCR Scan     		PDF 2SC3074 2SA1244 2sc3074

    2SA1244

    Abstract: 2SC3074 toshiba 2sc3074
    Text: TO SH IBA 2SC3074 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3074 HIGH CURRENT SWITCHING APPLICATIONS • • • Low Collector Saturation Voltage : VCE (saf) = 0.4 V (Max.) (at In = 3 A) High Speed Switching Time : tstg = 1.0 /us (Typ.)


    OCR Scan     		PDF 2SC3074 2SA1244 2SA1244 2SC3074 toshiba 2sc3074

    stk ic 5.1 channel amplifier

    Abstract: No abstract text available
    Text: ¡Ordering number : EN4340A _ _ SAfÊYOl Thick Film Hybrid 1C STK400-050 AF Power Amplifier Split Power Supply (30W + 30W + 30W min, THD = 0.4%) Overview Package Dimensions Now, thick-film audio power amplifier ICs are available


    OCR Scan     		PDF EN4340A STK400-050 GD211DÃ stk ic 5.1 channel amplifier

    2SC3303

    Abstract: No abstract text available
    Text: TO SH IBA 2SC3303 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3303 HIGH CURRENT SWITCHING APPLICATIONS • • Unit in mm Low Collector Saturation Voltage : VCE (saf) = 0.4 V (Max.) (at In = 3 A) High Speed Switching Time : tstg = 1.0 jus (Typ.)


    OCR Scan     		PDF 2SC3303 2SC3303

    Untitled

    Abstract: No abstract text available
    Text: HCS373T July 1999 Data Sheet Radiation Hardened Octal Transparent Latch, Three-State Harris’ Satellite Applications Flow SAF devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended


    OCR Scan     		PDF HCS373T 100kRAD MIL-PRF-38535 HCS373T 1-800-4-HARRIS

    Untitled

    Abstract: No abstract text available
    Text: HCTS373T Data Sheet July 1999 Radiation Hardened Octal Transparent Latch, Three-State Harris’ Satellite Applications Flow SAF devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended


    OCR Scan     		PDF HCTS373T 100kRAD MIL-PRF-38535 HCTS373T 1-800-4-HARRIS

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN3291 I SAfÊYO i FC 137 No.3291 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications with Bias Resistance F eatures • On-chip bias resistance (R1 = 4.7k£2) • Composite type with 2 transistors contained in the CP package currently in use, improving the


    OCR Scan     		PDF EN3291 FC137 2SA1510,

    2sd1402

    Abstract: 2SD1710 DIODE S45 transistor 2sd1710 TRANSISTORS SANYO 2SC3897
    Text: b3E D • SAf^ ?cici7ü7b DD12447 3TÛ ■ TEAJ Micaless T0-3PML Package Power Transistors SANYO SEMICONDUCTOR CORP Features ♦ Less cost and man-hour because of no insulator required for mounting * High-density mounting available because of plastic-covered heat sink of device


    OCR Scan     		PDF DD12447 2SD1649* 2SD1650& 2SD1651& 2SD1652* 2SD1711^ 2SD1654 2SD1655 2SD1656 2SD1710 2sd1402 DIODE S45 transistor 2sd1710 TRANSISTORS SANYO 2SC3897

    D44VH7

    Abstract: d44vh10
    Text: D44VH Serles File Number 2350 Silicon N-P-N Transistors Complementary to the D45VH Series Features: • Fast Switching ts < 700 ns resistive tf < 200 ns ■ Low VCE saf < 0.4V @ ;c = 8A TERMINAL DESIGNATIONS The D44VH series of silicon n-p-n power transistors are


    OCR Scan     		PDF D44VH D45VH D44VH7 d44vh10

    Untitled

    Abstract: No abstract text available
    Text: CD4049UBT Data Sheet July 1999 File Number CMOS Hex Buffer/Converter Features Harris’ Satellite Applications Flow SAF devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended


    OCR Scan     		PDF CD4049UBT 100kRAD MIL-PRF-38535 CD4049UBT 1-800-4-HARRIS

    Untitled

    Abstract: No abstract text available
    Text: CD4049UBT Semiconductor December 1998 Data Sheet File Number CMOS Hex Buffer/Converter Features Harris’ Satellite Applications Flow SAF devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended


    OCR Scan     		PDF CD4049UBT 100kRAD MIL-PRF-38535 CD4049UBT 1-800-4-HARR

    Untitled

    Abstract: No abstract text available
    Text: HS-139RH-T January 1999 Data Sheet Radiation Hardened Quad Voltage Comparator File Number 4646 Features • QML Qualified Per MIL-PRF-38535 Requirements Harris’ Satellite Applications Flow SAF devices are fully tested and guaranteed to 100kRAD total dose. These QML


    OCR Scan     		PDF HS-139RH-T MIL-PRF-38535 100kRAD HS-139RH-T 1-800-4-HARRIS