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    Toshiba America Electronic Components 2SA2154CT-GR,L3F

    TRANS PNP 50V 0.1A CST3
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    DigiKey 2SA2154CT-GR,L3F Digi-Reel 18,750 1
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    2SA2154CT-GR,L3F Cut Tape 18,750 1
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    2SA2154CT-GR,L3F Reel 10,000 10,000
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    Avnet Americas 2SA2154CT-GR,L3F Reel 12 Weeks 10,000
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    Mouser Electronics 2SA2154CT-GR,L3F 43,890
    • 1 $0.17
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    TTI 2SA2154CT-GR,L3F Reel 10,000
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    Toshiba America Electronic Components 2SA2154MFVGR,L3F

    TRANS PNP 50V 0.15A VESM
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    DigiKey 2SA2154MFVGR,L3F Digi-Reel 7,800 1
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    • 10000 $0.03424
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    2SA2154MFVGR,L3F Cut Tape 7,800 1
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    • 1000 $0.03882
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    Avnet Americas 2SA2154MFVGR,L3F Reel 12 Weeks 8,000
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    Mouser Electronics 2SA2154MFVGR,L3F 3,460
    • 1 $0.13
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    TTI 2SA2154MFVGR,L3F Reel 8,000
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    Toshiba America Electronic Components 2SA2154MFV-Y,L3F

    TRANS PNP 50V 0.15A VESM
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    DigiKey 2SA2154MFV-Y,L3F Cut Tape 7,390 1
    • 1 $0.16
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    • 1000 $0.03882
    • 10000 $0.03424
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    2SA2154MFV-Y,L3F Digi-Reel 7,390 1
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    • 100 $0.16
    • 1000 $0.03882
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    Avnet Americas 2SA2154MFV-Y,L3F Reel 12 Weeks 8,000
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    Mouser Electronics 2SA2154MFV-Y,L3F 7,920
    • 1 $0.13
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    • 100 $0.038
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    TTI 2SA2154MFV-Y,L3F Reel 8,000
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    onsemi 2SA2153-TD-E

    TRANS PNP 50V 2A PCP
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    DigiKey 2SA2153-TD-E Digi-Reel 1,553 1
    • 1 $0.54
    • 10 $0.362
    • 100 $0.54
    • 1000 $0.19254
    • 10000 $0.19254
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    2SA2153-TD-E Cut Tape 1,553 1
    • 1 $0.54
    • 10 $0.362
    • 100 $0.54
    • 1000 $0.19254
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    Avnet Americas 2SA2153-TD-E Reel 0 Weeks, 2 Days 5,883
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    2SA2153-TD-E Reel 13 Weeks 5,000
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    Mouser Electronics 2SA2153-TD-E 2,399
    • 1 $0.5
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    • 1000 $0.171
    • 10000 $0.133
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    Newark 2SA2153-TD-E Cut Tape 575 5
    • 1 $0.452
    • 10 $0.387
    • 100 $0.284
    • 1000 $0.232
    • 10000 $0.232
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    2SA2153-TD-E Reel 2,000
    • 1 $0.212
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    • 10000 $0.175
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    Rochester Electronics 2SA2153-TD-E 140,750 1
    • 1 $0.1401
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    • 100 $0.1317
    • 1000 $0.1191
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    TME 2SA2153-TD-E 3
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    Avnet Asia 2SA2153-TD-E 13 Weeks 6,000
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    Avnet Silica 2SA2153-TD-E 14 Weeks 1,000
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    EBV Elektronik 2SA2153-TD-E 15 Weeks 1,000
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    Flip Electronics 2SA2153-TD-E 8,000
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    Wuhan P&S 2SA2153-TD-E 410 1
    • 1 $0.3518
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    • 100 $0.2245
    • 1000 $0.1702
    • 10000 $0.1702
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    3M Interconnect 1U30A-MB2-SA2-150

    USB3 VISION INDUSTRIAL CAMERA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 1U30A-MB2-SA2-150 Bulk 20 1
    • 1 $45.39
    • 10 $39.743
    • 100 $35.5727
    • 1000 $33.61008
    • 10000 $33.61008
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    Avnet Americas 1U30A-MB2-SA2-150 Bulk 19 Weeks, 1 Days 25
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    Mouser Electronics 1U30A-MB2-SA2-150
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    SA215 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SA2159

    Abstract: lowest noise audio NPN transistor faders LF351
    Text: SA2159 VOLTAGE CONTROLLED AMPLIFIER FOR ELECTRONIC VOLUME CONTROL DESCRIPTION The SA2159 is a voltage-controlled amplifier VCA circuit. The chip is a high-performance current–in/current-out devices including two opposingpolarity, voltage-sensitive control ports. Due to super low-noise


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    PDF SA2159 SA2159 115dB 59mV/dB 20kHz lowest noise audio NPN transistor faders LF351

    SA2159

    Abstract: V200
    Text: SA2159 SA2159 VCA / NPN/PNP SIP8 SA2159VCA SIP-8 * >115dB * >130dB * * * 0.008%@0dB 0.035%@15dB * * * 6MHz * * * * / * * SA2159 SIP-8 : 1.0 http: www.silan.com.cn 2005.04.22 11 SA2159 (Tamb=25°C) VCC +15 V VEE -15 V ICC 30 mA PD 330 mW TOP -20~+75 °C TST


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    PDF SA2159 SA2159VCA 115dB 130dB -90dB -100dB 600mV SA2159 V200

    Untitled

    Abstract: No abstract text available
    Text: User’s Manual V850E/ME2 32-Bit Single-Chip Microcontroller Hardware µPD703111A Document No. U16031EJ3V0UD00 3rd edition Date Published June 2004 N CP(K) Printed in Japan [MEMO] 2 User’s Manual U16031EJ3V0UD NOTES FOR CMOS DEVICES 1 VOLTAGE APPLICATION WAVEFORM AT INPUT PIN


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    PDF V850E/ME2 32-Bit PD703111A U16031EJ3V0UD00 U16031EJ3V0UD

    SA6954

    Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
    Text: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to


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    PDF S29WSxxxN S29WS256N, S29WS128N, S29WS064N 16-Bit) SA6954 S29WS064N S29WS128N S29WS256N WS128N FFC00

    SA-275

    Abstract: 2aa 555 SA1127 SA1-108 SA1115 SA298 SA283 SA1117 PDL128G S29PL129J
    Text: Am29PDL129H Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29PL129J supersedes Am29PDL129H and is the factory-recommended migration path. Please refer to the S29PL129J datasheet for specifications and ordering information. Availability of this document


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    PDF Am29PDL129H S29PL129J Am29PDL129J SA-275 2aa 555 SA1127 SA1-108 SA1115 SA298 SA283 SA1117 PDL128G

    AM29DL640H

    Abstract: FTE073 PDL127 PDL127H PDL129 PDL129H cef3 sa2111 AM29DL640
    Text: Am75PDL191BHHa/ Am75PDL193BHHa Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


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    PDF Am75PDL191BHHa/ Am75PDL193BHHa Am75PDL191BHHa/Am75PDL193BHHa AM29DL640H FTE073 PDL127 PDL127H PDL129 PDL129H cef3 sa2111 AM29DL640

    A039h

    Abstract: 3A400
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.


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    PDF 16/4M MBM29XL12DF 128M-bit, 90-pin 96-ball A039h 3A400

    SA452

    Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
    Text: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this


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    PDF Am29LV2562M S29GL512N S29GL512N SA452 SA336 SA424 120R SA487 EE8000 a78000a7ffff c58000c5ffff SA4871

    S29WS256N

    Abstract: S71WS512NE0BFWZZ
    Text: S71WS512NE0BFWZZ Stacked Multi-Chip Product MCP Flash Memory and pSRAM CMOS 1.8 Volt, Simultaneous Operation, Burst Mode Flash Memory and Pseudo-Static RAM ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION MCP Features The S71WS512 Series is a product line of stacked Multi-Chip


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    PDF S71WS512NE0BFWZZ S71WS512 S29WS256N 54MHz 128Mb 96-ball S71WS512NE0BFWZZ S29WS256N

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W78M32V-XBX ADVANCED* 8Mx32 Flash 3.3V Page Mode Simultaneous Read/Write Operations Multi-Chip Package FEATURES Access Times of 90, 100, 120ns Unlock Bypass Program command Packaging • 159 PBGA, 13x22mm – 1.27mm pitch • Reduces overall programming time when issuing


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    PDF W78M32V-XBX 8Mx32 120ns 13x22mm

    TSOP-20 FOOTPRINT

    Abstract: tray datasheet bga 8x9 JESD 95-1, SPP-010 PL032J AM29PDL S29PL-J
    Text: S29PL-J 128/128/64/32 Megabit 8/8/4/2 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control S29PL-J Cover Sheet Data Sheet (Advance Information) Notice to Readers: This document states the current technical specifications regarding the Spansion


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    PDF S29PL-J 16-Bit) S29PL-J TSOP-20 FOOTPRINT tray datasheet bga 8x9 JESD 95-1, SPP-010 PL032J AM29PDL

    10001000XXX

    Abstract: PWA with 555 W78M32V-XBX SA139-SA142 SA175-SA178 SA187-SA190 SA163-SA166
    Text: White Electronic Designs W78M32V-XBX 8Mx32 Flash 3.3V Page Mode Simultaneous Read/Write Operation Multi-Chip Package FEATURES Access Times of 70, 90, 100, 120ns Unlock Bypass Program command Packaging • 159 PBGA, 13x22mm – 1.27mm pitch • Reduces overall programming time when issuing


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    PDF W78M32V-XBX 8Mx32 120ns 13x22mm 10001000XXX PWA with 555 W78M32V-XBX SA139-SA142 SA175-SA178 SA187-SA190 SA163-SA166

    SA158

    Abstract: SA214 8adrr
    Text: 63/+63/+ for Multi-Chip Products MCP  0HJDELW  0 [ %LW &026  9ROWRQO\ 6LPXOWDQHRXV 5HDG:ULWH 3DJH 0RGH )ODVK 0HPRU\ Datasheet PRELIMINARY Distinctive Characteristics ² $À6łt…h€r…h†rÃpˆ……r‡ ² ×6ǒƒvphyƇhqi’À‚qrÃpˆ……r‡


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    PDF S29PL127H SA158 SA214 8adrr

    NS064N

    Abstract: S29NS128N S29NS256N VDC048 S29NS256
    Text: S29NSxxxN MirrorBitTM Flash Family S29NS256N, S29NS128N, S29NS064N 256/128/64 Megabit 16/8/4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory ADVANCE INFORMATION Distinctive Characteristics „ Single 1.8 volt read, program and erase (1.70


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    PDF S29NSxxxN S29NS256N, S29NS128N, S29NS064N 16/8/4M 16-bit) 32-Word S29NS256/128/64N NS064N S29NS128N S29NS256N VDC048 S29NS256

    IS29GL256

    Abstract: No abstract text available
    Text: IS29GL256 256 Megabit 32768K x 8-bit / 16384K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • High performance - Access times as fast as 90 ns


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    PDF IS29GL256 32768K 16384K 16-bit) 8-word/16-byte 32-word/64-byte 128-word/256-byte 8-word/16byte IS29GL256 IS29GL256-JTLE

    MX29GL256FLT2I-90Q

    Abstract: MX29GL256FHT MX29GL256 MX29GL256FHT2I-90Q MX29GL256F MX29GL256FL MX29GL256FH 29GL256 MX29GL256FLXFI-90Q PM1544
    Text: MX29GL256F MX29GL256F DATASHEET P/N:PM1544 REV. 0.02, OCT. 18, 2010 1 PRELIMINARY MX29GL256F SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations - MX29GL256F H/L: VI/O=VCC=2.7V~3.6V, VI/O voltage must tight with VCC


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    PDF MX29GL256F PM1544 MX29GL256F 64KW/128KB 16-byte/8-word 64-byte/32-word 128-word 100mA MX29GL256FLT2I-90Q MX29GL256FHT MX29GL256 MX29GL256FHT2I-90Q MX29GL256FL MX29GL256FH 29GL256 MX29GL256FLXFI-90Q PM1544

    Untitled

    Abstract: No abstract text available
    Text: S71WSxxxJ based MCPs Stacked Multi-Chip Product MCP 128/64 Megabit (8M/4M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM PRELIMINARY Distinctive Characteristics MCP Features „ „ Power supply voltage of 1.7 to 1.95V


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    PDF S71WSxxxJ 16-bit) 66MHz S71WS S71WS256/128/064J

    Spansion S29GL512N11

    Abstract: No abstract text available
    Text: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages


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    PDF S29GLxxxN S29GL512N, S29GL256N, S29GL128N 128-word/256-byte 8-word/16-byte S29GLxxxN 27631sb2 Spansion S29GL512N11

    S25FL129

    Abstract: S25FL129P s25fl129p0 FL129P footprint WSON S25FL128P SA255 SCK FAB024 footprint WSON-8 reader sa223 FAC024
    Text: S25FL129P 128-Mbit CMOS 3.0 Volt Flash Memory with 104-MHz SPI Serial Peripheral Interface Multi I/O Bus Data Sheet S25FL129P Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,


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    PDF S25FL129P 128-Mbit 104-MHz S25FL129P S25FL129 s25fl129p0 FL129P footprint WSON S25FL128P SA255 SCK FAB024 footprint WSON-8 reader sa223 FAC024

    SGA23

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.3E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.


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    PDF 16/4M MBM29XL12DF 128M-bit, 90-pin 96-ball SGA23

    asme SA388

    Abstract: gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63
    Text: S29GL-M MirrorBitTM フラッシュファミリ S29GL256MS29GL128MS29GL064MS29GL032M 256M ビット,128M ビット,64M ビット,および 32M ビット, 3.0V 単一電源,ページモードフラッシュメモリ 0.23µm MirrorBit プロセステクノロジ


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    PDF S29GL-M S29GL256MS29GL128MS29GL064MS29GL032M S29GL128MS29GL128N S29GL256MS29GL256N S29GLxxxN 00-B-5 S29GL032M LAA064 asme SA388 gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63

    FAA064

    Abstract: SPANSION S29GL128 S29GL128 S29GL-N S29GL-P GL128N GL256N S29GL128N S29GL256N
    Text: S29GL-N MirrorBit Flash Family with Alternative BGA Layout S29GL256N, S29GL128N 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology S29GL-N Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion


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    PDF S29GL-N S29GL256N, S29GL128N S29GL-N FAA064 SPANSION S29GL128 S29GL128 S29GL-P GL128N GL256N S29GL128N S29GL256N

    HPPB

    Abstract: DS05 FPT-56P-M01 MBM29QM12DH MBM29QM12DH60 MBM29QM12DH-60 SGA71 Diode SA97
    Text: MBM29QM12DH -60 データシート 生産終息品 MBM29QM12DH -60 Cover Sheet 本製品は既に終息しておりますので新規設計へのご採用はご遠慮下さいますようお願いします。本データシートは参照及 び履歴目的でのみご利用願います。


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    PDF MBM29QM12DH MBM29QM12DH DS05-20909-2 DS05-20909-2 HPPB DS05 FPT-56P-M01 MBM29QM12DH60 MBM29QM12DH-60 SGA71 Diode SA97

    S29WS128J-MCP

    Abstract: S29WS128J S29WS-J S29WS064J
    Text: S29WS-J 128/64 Megabit 8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory Data Sheet S29WS-J Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,


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    PDF S29WS-J 16-Bit) S29WS-J S29WS128J-MCP S29WS128J S29WS064J