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    Eaton Bussmann PTSA121013V050

    PTC RESET FUSE 500MA 13V 1210
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    DigiKey PTSA121013V050 Digi-Reel 3,944 1
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    PTSA121013V050 Cut Tape 3,944 1
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    Kingbright PSA12-11SURKWA

    1.2" RED ALPHANUMERIC LED DISPLA
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    DigiKey PSA12-11SURKWA Bulk 114 1
    • 1 $6.98
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    Mouser Electronics PSA12-11SURKWA 308
    • 1 $4.95
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    Panduit Corp FHCSA-12-10U

    HD FLEX CASSETTE; 1 MPO TO 6 DUP
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    DigiKey FHCSA-12-10U Bulk 9 1
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    Avnet Americas FHCSA-12-10U Bulk 8 Weeks 1
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    RS FHCSA-12-10U Bulk 8 Weeks 1
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    Bel Power Solutions PSA121.5-9IRG

    DC DC CONVERTER 12V
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    DigiKey PSA121.5-9IRG Bulk 8 1
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    Panduit Corp FQSA-12-10AS

    12-FIBER OM4+ QN SFQ CASSETTE, U
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    DigiKey FQSA-12-10AS Bulk 2 1
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    Avnet Americas FQSA-12-10AS Bulk 8 Weeks 1
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    Newark FQSA-12-10AS Bulk 1
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    Sager FQSA-12-10AS 1
    • 1 $1059.29
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    SA121 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SA1210 NEL Frequency Controls 5 V, ±100 ppm, TTL compatible enable/disable crystal clock oscillator Original PDF
    SA12100 SUSUMU Resistor: Thin Film: 120: 0.12%: 3850: RDL Original PDF
    SA1211 NEL Frequency Controls 5 V, ±50 ppm, TTL compatible enable/disable crystal clock oscillator Original PDF
    SA12-12 Reliability 1 Watt Unregulated DC/DC Converters V-PAC and S-PAC Series Scan PDF
    SA1217 NEL Frequency Controls 5 V, ±25 ppm, TTL compatible enable/disable crystal clock oscillator Original PDF
    SA1219 NEL Frequency Controls 5 V, customer specific, TTL compatible enable/disable crystal clock oscillator Original PDF
    SA121A NEL Frequency Controls 5 V, ±20 ppm, TTL compatible enable/disable crystal clock oscillator Original PDF
    SA121B NEL Frequency Controls 5 V, ±50 ppm, TTL compatible enable/disable crystal clock oscillator Original PDF
    SA121C NEL Frequency Controls 5 V, ±100 ppm, TTL compatible enable/disable crystal clock oscillator Original PDF

    SA121 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: User’s Manual V850E/ME2 32-Bit Single-Chip Microcontroller Hardware µPD703111A Document No. U16031EJ3V0UD00 3rd edition Date Published June 2004 N CP(K) Printed in Japan [MEMO] 2 User’s Manual U16031EJ3V0UD NOTES FOR CMOS DEVICES 1 VOLTAGE APPLICATION WAVEFORM AT INPUT PIN


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    V850E/ME2 32-Bit PD703111A U16031EJ3V0UD00 U16031EJ3V0UD PDF

    48C20

    Abstract: SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom
    Text: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout


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    3608C 48C20 SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom PDF

    CompactCellTM Static RAM

    Abstract: No abstract text available
    Text: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS


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    Am45DL6408G 16-Bit) 8-Bit/512 73-Ball limitation02 CompactCellTM Static RAM PDF

    GL032A

    Abstract: S71GL032A S71GL032
    Text: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this


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    S71GL032A 16-bit) 1M/512K/256K GL032A S71GL032 PDF

    M15451E

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD29F064115-X 64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT WORD MODE PAGE MODE Description The µPD29F064115-X is a flash memory organized of 67,108,864 bits and 142 sectors. Sectors of this memory can


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    PD29F064115-X 64M-BIT 16-BIT PD29F064115-X M15451E PDF

    SA6954

    Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
    Text: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to


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    S29WSxxxN S29WS256N, S29WS128N, S29WS064N 16-Bit) SA6954 S29WS064N S29WS128N S29WS256N WS128N FFC00 PDF

    740-0007

    Abstract: EN29GL064 6A000
    Text: Preliminary EN29GL064 EN29GL064 64 Megabit 8192K x 8-bit / 4096K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Suspend and Resume commands for Program and Erase operations • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and


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    EN29GL064 8192K 4096K 16-bit) 740-0007 EN29GL064 6A000 PDF

    110R

    Abstract: S29GL128N
    Text: Am29LV6402M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL128N supersedes Am29LV6402M and is the factory-recommended migration path. Please refer to the S29GL128N Data Sheet for specifications and ordering information. Availability of this


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    Am29LV6402M S29GL128N 110R PDF

    SA-275

    Abstract: 2aa 555 SA1127 SA1-108 SA1115 SA298 SA283 SA1117 PDL128G S29PL129J
    Text: Am29PDL129H Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29PL129J supersedes Am29PDL129H and is the factory-recommended migration path. Please refer to the S29PL129J datasheet for specifications and ordering information. Availability of this document


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    Am29PDL129H S29PL129J Am29PDL129J SA-275 2aa 555 SA1127 SA1-108 SA1115 SA298 SA283 SA1117 PDL128G PDF

    M420000000

    Abstract: FSB073 3FE00
    Text: PRELIMINARY Am42DL640AG Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features • Minimum 1 million write cycles guaranteed per sector


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    Am42DL640AG 16-Bit) 73-Ball 5M-1994. M420000000 FSB073 3FE00 PDF

    MBM29BS64LF

    Abstract: MBM29BS64LF-18 MBM29BT64LF-18
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20916-1E BURST MODE FLASH MEMORY CMOS 64M 4M x 16 BIT MBM29BS/BT64LF-18/25 • GENERAL DESCRIPTION The MBM29BS/BT64LF is a 64M bit, 1.8 Volt-only, Burst mode and dual operation Flash memory organized as 4M words of 16 bits each. The device offered in a 60-ball FBGA package. This device is designed to be programmed


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    DS05-20916-1E MBM29BS/BT64LF-18/25 MBM29BS/BT64LF 60-ball MBM29BS/ BT64LF-25 MBM29BT64LF-18 MBM29BS64LF-18 F0403 MBM29BS64LF MBM29BS64LF-18 PDF

    BGA-101P-M01

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50208-2E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M (x 16) FLASH MEMORY & 16 M (× 16) SRAM Interface FCRAM MB84LD23381EJ-10 • FEATURES • Power Supply Voltage of 2.3 V to 2.7 V for Flash • Power Supply Voltage of 2.3 V to 2.7 V for FCRAM


    Original
    DS05-50208-2E MB84LD23381EJ-10 101-ball BGA-101P-M01 PDF

    MX29LV640D

    Abstract: A0-A21 MX29LV640E Q0-Q15 MX29LV640DT 0001111XXX MX29LV640DBTC-90G 1000010XXX
    Text: MX29LV640D T/B MX29LV640D T/B DATASHEET The MX29LV640D T/B product family is not recommended for new designs. The MX29LV640E T/B family is the recommended replacement. Please refer to MX29LV640E T/B datasheet for full specifications and ordering information, or contact your local sales


    Original
    MX29LV640D MX29LV640E MX29LV640E PM1208 64M-BIT A0-A21 Q0-Q15 MX29LV640DT 0001111XXX MX29LV640DBTC-90G 1000010XXX PDF

    MX29LV640ebt

    Abstract: MX29LV640EB MX29LV640EBTI-70G 29LV640 MX29LV640E mx29lv640etti MX29LV640ETTI-70G A0-A21 Q0-Q15 PM-132
    Text: MX29LV640E T/B 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • 8,388,608 x 8 / 4,194,304 x 16 switchable • Sector Structure - 8KB 4KW x 8 and 64KB(32KW) x 127 • Extra 128-word sector for security - Features factory locked and identifiable, and customer lockable


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    MX29LV640E 64M-BIT 128-word MX29LV640ebt MX29LV640EB MX29LV640EBTI-70G 29LV640 mx29lv640etti MX29LV640ETTI-70G A0-A21 Q0-Q15 PM-132 PDF

    AM29DL640H

    Abstract: FTE073 PDL127 PDL127H PDL129 PDL129H cef3 sa2111 AM29DL640
    Text: Am75PDL191BHHa/ Am75PDL193BHHa Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


    Original
    Am75PDL191BHHa/ Am75PDL193BHHa Am75PDL191BHHa/Am75PDL193BHHa AM29DL640H FTE073 PDL127 PDL127H PDL129 PDL129H cef3 sa2111 AM29DL640 PDF

    A039h

    Abstract: 3A400
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.


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    16/4M MBM29XL12DF 128M-bit, 90-pin 96-ball A039h 3A400 PDF

    4kw marking

    Abstract: No abstract text available
    Text: TM SPANSION MCP Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,


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    F0307 4kw marking PDF

    Untitled

    Abstract: No abstract text available
    Text: Am29DL640D 64 Megabit 8 M x 8-Bit/4 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while executing erase/program functions in another bank.


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    Am29DL640D 16-Bit) 256od) PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION Am29LV640MH/L 64 Megabit 4 M x 16-Bit/8 M x 8-Bit MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 V for read, erase, and program operations


    Original
    Am29LV640MH/L 16-Bit/8 128-word/256-byte 8-word/16-byte TS056 TSR056 0004h 0001h PDF

    101R

    Abstract: 120R LV065MU S29GL064A
    Text: Am29LV641MH/L Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL064A supersedes Am29LV641M H/L and is the factory-recommended migration path. Please refer to the S29GL064A datasheet for specifications and ordering information. Availability of this


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    Am29LV641MH/L S29GL064A Am29LV641M 101R 120R LV065MU PDF

    AT49BV6416

    Abstract: AT49BV6416C AT49BV6416CT
    Text: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout


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    64-megabit AT49BV6416 AT49BV6416C AT49BV6416CT PDF

    SA452

    Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
    Text: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this


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    Am29LV2562M S29GL512N S29GL512N SA452 SA336 SA424 120R SA487 EE8000 a78000a7ffff c58000c5ffff SA4871 PDF

    29LV641

    Abstract: 29LV640D
    Text: A D V A N C E IN F O R M A T IO N AMDil Am29LV640DU/Am29LV641 DU 64 Megabit 4 M x 16-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory with Versatilel/O Control DISTINCTIVE CHARACTERISTICS • ■ Single power supply operation Compatibility with JEDEC standards


    OCR Scan
    Am29LV640DU/Am29LV641 16-Bit) 48-pin 56-pin Am29LV640DU/Am 29LV641 TSR048-- 16-038-TS48 TSR048 29LV640D PDF

    29lv641

    Abstract: No abstract text available
    Text: AMD£I ADVANCE INFORMATION Am29LV640DU/Am29LV641 DU 64 Megabit 4 M x 16-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory with Versatilel/O Control DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 2.7 to 3.6 volt read, erase, and program operations


    OCR Scan
    Am29LV640DU/Am29LV641 16-Bit) 48-pin 56-pin Am29LV640DU/Am 29LV641 PDF