S9925 Search Results

NDS9925A

Contextual Info: N July 1 9 9 6 N D S9925A Dual N-Channel Enhancement M ode Field Effect Transistor General Description Features T h e se N -C h a n n e l e n h a n c e m e n t m o d e p o w e r field effect tra n sis to rs a re p ro d u c e d u sin g N a tio n a l's p ro p rie ta ry , h ig h cell d e n sity , DMOS te c h n o lo g y .

S9925

Contextual Info: N J u ly 199 6 N D S9925A Dual N-Channel Enhancement Mode Field Effect Transistor G eneral D escription Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

Contextual Info: N July 1996 S9925A Dual N-Channel Enhancement Mode Field Effect Transistor G eneral D escription Features These N-Channel enhancem ent m ode p ow er field effect transistors are produced using proprietary, high cell density, DMOS National's technology. • 4.2 A, 20 V. RDS 0N = 0.06 D @ VGS = 4.5 V