S9014LT1 Search Results

S9014LT1 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
S9014LT1		Weitron	NPN General Purpose Transistors		Original	PDF
S9014LT1		Unknown	SOT-23 Plastic-Encapsulate Transistors		Scan	PDF

S9014LT1 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
S9014L Abstract: S9014LT1 sot-23 MARKING O7 S9014LT1-L Text: S9014LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER,LOW LEVEL&LOW NOISE * Complement to S9015LT1 * Collector Current: Ic= 100mA * Collector-Emitter Voltage:Vce= 45V * High Total Power Dissipation:Pc=225mW	Original	PDF	S9014LT1 S9015LT1 100mA 225mW OT-23 100mA 062in 300uS S9014LT1 S9014L sot-23 MARKING O7 S9014LT1-L
Untitled Abstract: No abstract text available Text: S9015LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQRENCY,LOW NOISE AMPLIFIER * Complement to S9014LT1 * Collector Current: Ic= -100mA * Collector-Emitter Voltage:Vce= -45V Package:SOT-23	Original	PDF	S9015LT1 S9014LT1 -100mA OT-23 -100mA -10mA 062in 300uS S9015LT1
MARKING E1 SOT23 TRANSISTOR Abstract: S9014LT1 J6 S9014LT1 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 1. BASE S9014LT1 2. EMITTER TRANSISTOR（ NPN ） 3. COLLECTOR １．０ FEATURES Power dissipation PCM : 0.2 W（Tamb=25℃） Collector current ICM : 0.1 A	Original	PDF	OT-23 OT--23 S9014LT1 S9014LT1 037TPY 950TPY 550REF 022REF MARKING E1 SOT23 TRANSISTOR S9014LT1 J6
Untitled Abstract: No abstract text available Text: SOT-23 Plastic-Encapsulate Transistors S9014LT1 NPN TRANSISTOR FEATURES • High total power dissipation.(pc=0.2w) · Complementary to S9015LT1 MARKING: J6 MAXIMUM RATINGS* TA=25? unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage	Original	PDF	OT-23 S9014LT1 S9015LT1 30MHz
S9014RLT1 Abstract: No abstract text available Text: S9014LT1 3 1 2 SOT-23 V CEO Value 45 50 5.0 100 225 1.8 556 S9014QLT1=14Q S9014RLT1=14R S9014SLT1=14S 0.1 S9014TLT1=14T 45 50 100 100 40 3.0 WEITRON http://www.weitron.com.tw 1/ 0.1 u 0.1 u 28-Apr-2011 S9014LT1 ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted (Countinued)	Original	PDF	S9014LT1 OT-23 S9014QLT1 S9014RLT1 S9014SLT1 S9014TLT1 28-Apr-2011 OT-23
Transistor S8550 2TY Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6 Text: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250	Original	PDF	OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W Transistor S8550 2TY Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
BCW60B Abstract: BCW60BLT1 S9014LT1 S9015LT1 Text: BCW60BLT1 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER,LOW LEVEL&LOW NOISE * Complement to S9015LT1 * Collector Current: Ic= 100mA * Collector-Emitter Voltage:Vce= 45V * High Total Power Dissipation:Pc=225mW * High Hfe And Good Linearity ABSOLUTE MAXIMUM RATINGS at Ta=25	Original	PDF	BCW60BLT1 S9015LT1 100mA 225mW 100mA 062in BCW60BLT1 S9014LT1 BCW60B BCW60B S9014LT1 S9015LT1
Y2 transistor Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882 Text: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123	Original	PDF	huaxing20 OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W Y2 transistor Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
transistors marking HJ Abstract: s9014lt1 S9014LT1 J6 Text: SOT-23 Plastic-Encapsulate Transistors S9014LT1 TRANSISTOR NPN 1 .BASE 2 .EMITTER 3 .COLLECTOR FEATURES Power dissipation Pcm : 0.2 W (Tamb=25°C) Collector current 2 .4 ICM: 0.1 1.3 A Collector-base voltage ss O) CT> Csi o EE V(BR)CBo: m 50V Operating and storage junction temperature range	OCR Scan	PDF	OT-23 S9014LT1 cut-30MHz S9014LT1 transistors marking HJ S9014LT1 J6
9014LT1 Abstract: 9014L Text: M C C SOT-23 P la stic-E n c ap su la te T ra n s is to rs ^ S 9014L T1 TR A N SIS TO R N P N 1 .BASE 2 .EMITTER 3.COLLECTOR FEATURES à. o; Power dissipation Pcm : 0.2 W (Tamb=25"C) Collector current IC M : 0.1 A C ollector-base voltage V{B R )C B o: 50V	OCR Scan	PDF	OT-23 9014L S9014LT1 9014LT1