2SC2786
Abstract: S9015LT1
Text: 2SC2786 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER,LOW LEVEL&LOW NOISE * Complement to S9015LT1 * Collector Current: Ic= 100mA * Collector-Emitter Voltage:Vce= 45V * High Total Power Dissipation:Pc=225mW * High Hfe And Good Linearity 1. ABSOLUTE MAXIMUM RATINGS at Ta=25
|
Original
|
PDF
|
2SC2786
S9015LT1
100mA
225mW
100mA
062in
300uS
2SC2786
S9015LT1
|
S9014L
Abstract: S9014LT1 sot-23 MARKING O7 S9014LT1-L
Text: S9014LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER,LOW LEVEL&LOW NOISE * Complement to S9015LT1 * Collector Current: Ic= 100mA * Collector-Emitter Voltage:Vce= 45V * High Total Power Dissipation:Pc=225mW
|
Original
|
PDF
|
S9014LT1
S9015LT1
100mA
225mW
OT-23
100mA
062in
300uS
S9014LT1
S9014L
sot-23 MARKING O7
S9014LT1-L
|
Untitled
Abstract: No abstract text available
Text: S9015LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQRENCY,LOW NOISE AMPLIFIER * Complement to S9014LT1 * Collector Current: Ic= -100mA * Collector-Emitter Voltage:Vce= -45V Package:SOT-23
|
Original
|
PDF
|
S9015LT1
S9014LT1
-100mA
OT-23
-100mA
-10mA
062in
300uS
S9015LT1
|
BCW60B
Abstract: BCW60BLT1 S9014LT1 S9015LT1
Text: BCW60BLT1 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER,LOW LEVEL&LOW NOISE * Complement to S9015LT1 * Collector Current: Ic= 100mA * Collector-Emitter Voltage:Vce= 45V * High Total Power Dissipation:Pc=225mW * High Hfe And Good Linearity ABSOLUTE MAXIMUM RATINGS at Ta=25
|
Original
|
PDF
|
BCW60BLT1
S9015LT1
100mA
225mW
100mA
062in
BCW60BLT1
S9014LT1
BCW60B
BCW60B
S9014LT1
S9015LT1
|
Untitled
Abstract: No abstract text available
Text: SOT-23 Plastic-Encapsulate Transistors S9015LT1 TRANSISTOR PNP SOT-23 FEATURES 1. BASE 2. EMITTER Power dissipation 1. 0 W (Tamb=25℃) Collector current -0.1 A ICM: Collector-base voltage -50 V V(BR)CBO: Operating and storage junction temperature range
|
Original
|
PDF
|
OT-23
S9015LT1
OT-23
-100mA,
-10mA
30MHz
S9015LT1
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9015LT1 TRANSISTOR PNP SOT-23 FEATURES 1. BASE 2. EMITTER Power dissipation 1. 0 W (Tamb=25℃) Collector current -0.1 A ICM: Collector-base voltage -50 V V(BR)CBO:
|
Original
|
PDF
|
OT-23
S9015LT1
OT-23
-100mA,
-10mA
30MHz
S9015LT1
|
Untitled
Abstract: No abstract text available
Text: DONGGUAN FORWARD SEMICONDUCTOR CO.,LTD SOT-23 Plastic-Encapsulate Transistors S9015LT1 TRANSISTOR PNP FEATURES Power dissipation PCM: W(Tamb=25℃) 0.2 Collector current ICM: -0.1 A -50 V Collector-base voltage V(BR)CBO: Operating and storage junction temperature range
|
Original
|
PDF
|
OT-23
S9015LT1
-10mA
30MHz
|
sot-23 Marking M6
Abstract: m6 marking transistor sot-23 S9015LT1
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9015LT1 TRANSISTOR( PNP ) SOT—23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR 1.0 Power dissipation PCM : 0.2 W(Tamb=25℃) Collector current ICM : -0.1
|
Original
|
PDF
|
OT-23
S9015LT1
OT--23
-100A
S9015LT1
037TPY
950TPY
550REF
022REF
sot-23 Marking M6
m6 marking transistor sot-23
|
Untitled
Abstract: No abstract text available
Text: SOT-23 Plastic-Encapsulate Transistors S9014LT1 NPN TRANSISTOR FEATURES • High total power dissipation.(pc=0.2w) · Complementary to S9015LT1 MARKING: J6 MAXIMUM RATINGS* TA=25? unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage
|
Original
|
PDF
|
OT-23
S9014LT1
S9015LT1
30MHz
|
S9015LT1
Abstract: S9015 S9015M
Text: S9015LT1 PNP 3 1 2 SOT-23 V CEO Value -45 -50 -5 -100 200 1.6 625 S9015=M6 -45 -0.1 -40 -100 -5.0 -100 E=-45Vdc, I E= 0 -50 -5.0 WEITRON http://www.weitron.com.tw O -0.1 u -0.1 u -0.1 u S9015LT1 ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted) (Countinued)
|
Original
|
PDF
|
S9015LT1
OT-23
S9015
-45Vdc,
-10mAdc)
-100uA
-50uA
S9015LT1
S9015M
|
S9015RLT1
Abstract: No abstract text available
Text: S9015LT1 PNP 3 1 2 SOT-23 V CEO Value -45 -50 -5 -100 225 1.8 556 S9015QLT1=15Q S9015RLT1=15R -45 -0.1 -40 -100 -5.0 -100 -40 -3.0 WEITRON http://www.weitron.com.tw S9015SLT1=15S 1/ -0.1 u -0.1 u 28-Apr-2011 S9015LT1 ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted (Countinued)
|
Original
|
PDF
|
S9015LT1
OT-23
S9015QLT1
S9015RLT1
S9015SLT1
28-Apr-2011
OT-23
|
2SC2786
Abstract: S9015LT1
Text: 2SC2786 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER,LOW LEVEL&LOW NOISE * Complement to S9015LT1 * Collector Current: Ic= 100mA * Collector-Emitter Voltage:Vce= 45V * High Total Power Dissipation:Pc=225mW * High Hfe And Good Linearity 1. ABSOLUTE MAXIMUM RATINGS at Ta=25
|
Original
|
PDF
|
2SC2786
S9015LT1
100mA
225mW
100mA
062in
300uS
2SC2786
S9015LT1
|
S9015LT1
Abstract: No abstract text available
Text: 2SD601LT1 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER,LOW LEVEL&LOW NOISE * Complement to S9015LT1 * Collector Current: Ic= 100mA * Collector-Emitter Voltage:Vce= 45V * High Total Power Dissipation:Pc=225mW * High Hfe And Good Linearity ABSOLUTE MAXIMUM RATINGS at Ta=25
|
Original
|
PDF
|
2SD601LT1
S9015LT1
100mA
225mW
CHARAC135
100mA
062in
300uS
2SD601LT1
S9015LT1
|
Transistor S8550 2TY
Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
Text: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250
|
Original
|
PDF
|
OD-123
1N4148W
1N4448W
1N5711W*
1N6263W*
B0520LW
B0530W
B0540W
B5817W
B5818W
Transistor S8550 2TY
Schottky barrier sot-23 Marking s4
sk 8050s
KL4 SOT-23
d882 to-92
BR S8050
bq d882
transistor D882 datasheet
S8050 equivalent
PCR100-6
|
|
sot-23 Marking M6
Abstract: "device marking" "device marking" M6 m6 marking transistor sot-23 AV9015LT1 S9015LT1
Text: @vic SOT-23 Plastic-Encapsulate Transistors AV9015LT1 TRANSISTOR PNP SOT-23 FEATURES 1. BASE 2. EMITTER Power dissipation 1. 0 W (Tamb=25℃) Collector current ICM: -0.1 A Collector-base voltage -50 V V(BR)CBO: Operating and storage junction temperature range
|
Original
|
PDF
|
OT-23
AV9015LT1
OT-23
-100mA,
-10mA
30MHz
S9015LT1
sot-23 Marking M6
"device marking"
"device marking" M6
m6 marking transistor sot-23
AV9015LT1
|
Untitled
Abstract: No abstract text available
Text: M C C SOT-23 P la s tic-E n cap su fa te T ra n s is to rs ^ 1.BASE 2 .EMITTER 3.COLLECTOR 8 9 0 1 5LT1 TR A N SIS TO R PNP FEATURES ftovterdtesipation PCM: 0.2 W (Tam b= 25'C) Collector current ICM: -0.1 A Collector-base voltage V( b r jc b o :-50V Operating and storage junction temperature range
|
OCR Scan
|
PDF
|
OT-23
-100m
-10mA
30MHz
S9015LT1
S9015LT1
|