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Vox Power Ltd NEVO-600S-8855-DK000 AC/DC CONVERTER 4X24V 2X12V 450W
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TE Connectivity CS8855-000 High Performance Cable - Cable Rools/Shrink Tubing (Alt: CS8855-000)
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TE Connectivity 55PC6292-24-MST7-9CS3296 Multi-Conductor Cables 24AWG 7C SHL JCKT GP 600V PRICE PER FT
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Fortune Semiconductor Corp FS8855B
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S8855 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
S8855		Toshiba	MICROWAVE POWER GaAs FET		Scan	PDF

S8855 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
S8855 Abstract: TOSHIBA MICROWAVE AMPLIFIER toshiba fet toshiba control code Text: TOSHIBA S8855 MICROWAVE POWER GaAs FET Power GaAs FETs Packaged Features • High power - P1dB = 31.5 dBm at f = 15 GHz • High gain - G1dB = 6.5 dB at f = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)	Original	PDF	S8855 15GHz S8855 TOSHIBA MICROWAVE AMPLIFIER toshiba fet toshiba control code
7400A Abstract: C-Band Power GaAs FET HEMT Chips electrostatic precipitator TIM6472-8 GAAS FET AMPLIFIER x-band 10w TPM2323-30 TIM5053-30L TPM1617 M7179 TPM1617-16 Text: TOSHIBA MICROWAVE POWER GaAs FET APPLICATION NOTES Recommended Assembly Methods for GaAs FET and HEMT Chip Form In assembling the GaAs FET and HEMT chips onto the microstrip circuits, the following die attaching and wire bonding methods are recommended. Precautions	Original	PDF
RFM70U12D Abstract: 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919 Text: 東芝半導体製品総覧表 2009 年 7 月版高周波デバイス高周波バイポーラ小信号トランジスタ高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ高周波ダイオード小信号 MMIC 高周波セルパック	Original	PDF	SCJ0004N 2SC2714 2SC2715 2SC2716 2SC3123 2SC5064 2SC5084 2SC5089 2SC5094 2SC5106 RFM70U12D 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919
MT4S300T Abstract: TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T Text: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Diodes Small-Signal MMICs Radio-Frequency Cell Packs Microwave Semiconductors	Original	PDF	2010/9SCE0004K 2SC1923 MT4S300T TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T
MT3S111P Abstract: 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293 Text: Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors z 280 Radio-Frequency Small-Signal FETs z 283 Radio-Frequency Power MOSFETs z 284 Radio-Frequency Bipolar Power Transistors z 284 Radio-Frequency Diodes z 285 Small-Signal MMICs Radio-Frequency Cell Packs z 287	Original	PDF	2SC941TM 2SC3136 TIM7179-45SL TIM7179-60SL TIM7785-4SL TIM7785-4UL TIM7785-6UL TIM7785-8SL TIM7785-8UL TIM7785-12UL MT3S111P 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293
TGI8596-50 Abstract: TMD7185-2 TIM5359-60SL TIM8996-30 X-band Gan Hemt TGI1414-50L TMD0305-2 tim5964-60sl TIM5964-6UL TIM5359-4UL Text: ▼ Microwave Semiconductors Product Guide 2009 Power GaAs FETs and GaAs MMICs Pout vs. Frequency Map .3 C-band Internally Matched Power GaAs FETs Pout vs. Frequency Map .4	Original	PDF	MSE-2008 MSE-2009 TGI8596-50 TMD7185-2 TIM5359-60SL TIM8996-30 X-band Gan Hemt TGI1414-50L TMD0305-2 tim5964-60sl TIM5964-6UL TIM5359-4UL
2sc5066 Abstract: MT3S111P MT3S111 toshiba transistors catalog TIM4450-4UL TGI1314-50L MT3S106 MT4S200T X-band low noise amplifiers toshiba 2SC3136 Text: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Bipolar Power Transistors Radio-Frequency Diodes Radio-Frequency Power Amp ICs	Original	PDF	SCE0004I 2SC380TM 2sc5066 MT3S111P MT3S111 toshiba transistors catalog TIM4450-4UL TGI1314-50L MT3S106 MT4S200T X-band low noise amplifiers toshiba 2SC3136
MDM 6600 Abstract: mt 1389 de 2061 D nikko AR9344 bosch AL 1115 CV denso alternator 7805/3A bosch al 1450 dv CATERPILLAR 207-1560 ba 4918 Text: No. 9800-OERF-007 Replaces • Remplace • Substituye No. 9800-OERF-005 Dixie Electric Ltd. OEM CROSS REFERENCE GUIDE DE RÉFÉRENCE GUÍA DE REFERENCIA 2007 Index • Índice AGCO .1	Original	PDF	9800-OERF-007 9800-OERF-005 MDM 6600 mt 1389 de 2061 D nikko AR9344 bosch AL 1115 CV denso alternator 7805/3A bosch al 1450 dv CATERPILLAR 207-1560 ba 4918
RFM70U12D Abstract: 2SC3136 RFM70 TGI8596-50 MT4S300T TA4029 TA4032FT TA4029TU TA4029CTC 2SK403 Text: 東芝半導体製品総覧表 2010 年 1 月版高周波デバイス高周波バイポーラ小信号トランジスタ高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ高周波ダイオード小信号 MMIC 高周波セルパック	Original	PDF	SCJ0004O 2SC2714 2SC2715 2SC2716 2SC3123 2SC5064 2SC5084 2SC5089 2SC5106 2SC5109 RFM70U12D 2SC3136 RFM70 TGI8596-50 MT4S300T TA4029 TA4032FT TA4029TU TA4029CTC 2SK403
TGI7785-120L Abstract: TA4029TU MT3S11CT TA4029CTC MT4S300T MT4S300U TA4032FT TGI8596-50 TMD7185-2 TGI0910-50 Text: 東芝半導体製品総覧表 2011 年 1 月版高周波デバイス高周波バイポーラ小信号トランジスタ高周波小信号 FET 高周波パワーMOSFET 高周波ダイオード小信号 MMIC 高周波セルパックマイクロ波半導体	Original	PDF	SCJ0004R 2SC2714 2SC5064 2SC5084 2SC5089 2SC5106 2SC5109 MT3S03A MT3S04A MT3S106 TGI7785-120L TA4029TU MT3S11CT TA4029CTC MT4S300T MT4S300U TA4032FT TGI8596-50 TMD7185-2 TGI0910-50
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET S8855 Power GaAs FETs Chip Form Features • High power - P1dB = 31.5 dBm at f= 15 GHz • High gain - G idB = 6.5 dB a tf = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)	OCR Scan	PDF	S8855 15GHz 002221b
S8855 Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR S8855 TECHNICAL DATA FEATURES: • ■ HIGH POWER p1 d B ~ 31.5 dBm at f = 15 GHz HIGH GAIN G\|dB = 6.5 dB at f = 15 GHz SUITABLE FOR Ku-BAND AMPLIFIER ION IMPLANTATION RF PERFORMANCE SPECIFICATIONS Ta = 25° C	OCR Scan	PDF	S8855 15GHz -S8855- S8855
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET S8855 Power GaAs FETs Chip Form Features • High power - P idB = 31.5 dBm at f = 15 GHz • High gain - G 1dB = 6.5 dB at f = 1 5 G H z • Suitable for Ku-Band am plifier • Ion implantation RF Performance Specifications (Ta = 25° C)	OCR Scan	PDF	S8855 S8855
JS8834-AS Abstract: No abstract text available Text: Microwave Semiconductors Power GaAs FETs J10 Type No. Freq. Band GHz S8834 JS8834-AS S8835 JS8835-AS PicB Typ. GiteTyp. (dBm) (dB) Ids = Idss/2 nadd Typ. (%) Ftest (GHz ) Vos (V) 21 9 27 8 10 24 8 26 8 10 29.5 7.5 30 8 10 32 7 28 8 10 33.5 5.5 25 8 10 36	OCR Scan	PDF	S8834 JS8834-AS S8835 JS8835-AS S8836A S8836B JS8836A-AS S8837A JS8837A-AS S8838A

FZK101 Abstract: FZK105 upd101 SNF10 SN76131 TAA700 FZH111 FZJ101 MFC8010 MFC8001 Text: HANDBOOK OF INTESBATEI CIRCUITS in EQUIVALENTS AND SUBSTITUTES A lthough every care is taken with the preparation of this book, the publishers will not be responsible for any errors that might occur. I.S.B.N. 0 900162 35 X 1974 by Bernard B. Babani First Published 1974	OCR Scan	PDF	Grou19 CN127-128-638 ZN220-320. CN131-132-642. ZN221-321. CN133-134-644. ZN248-348. CN135-136-646 ZN222-322. CN121-122-682. FZK101 FZK105 upd101 SNF10 SN76131 TAA700 FZH111 FZJ101 MFC8010 MFC8001
SN7441 Abstract: 74L78 Sw 7441Aj SN7401 SN7449 7475n itt u6a9601 N8490 National Semiconductor Linear Data Book c2003p Text: TTL Integrated Circuits Catalog from Texas Instruments 1 August 1969 T e x a s In s t r u m e n t s IN C O R P O R A T E D P O S T O F F IC E B O X 5 0 1 2 • D ALLAS. TEXAS 75222 GENERAL INFORMATION INDEXES Numerical • Functional • Cross-Reference TTL APPLICATION REPORTS	OCR Scan	PDF	54H/74H 54L/74L SN7441 74L78 Sw 7441Aj SN7401 SN7449 7475n itt u6a9601 N8490 National Semiconductor Linear Data Book c2003p
EPM5130 Abstract: No abstract text available Text: EPM5130 EPLD □ High-density 128-macrocell general-purpose MAX 5000 EPLD □ 128 macrocells optim ized for pin-intensive applications, easily integrating over 60 TTL MSI and SSI components □ High pin count for 16- or 32-bit data paths □ 256 shareable expander product terms	OCR Scan	PDF	EPM5130 128-macrocell 32-bit 16-bit
74L47 Abstract: a1208 transistor 74L03 sn76131 MC526L eh12a MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR tg321 PJ 909 inverter LS600 Text: $4*-5 The Integrated Circuits Catalog for Design Engineers First Edition T e x a s In s t r u m e n t s INCORPORATED CC-401 10072-41-US Printed in U.S.A. G ENERAL IN FO R M A TIO N INDEXES Numerical • Functional • Cross-Reference DISCRETE SEMICONDUCTORS A N D COMPONENTS	OCR Scan	PDF	CC-401 10072-41-US 54S/74S 74L47 a1208 transistor 74L03 sn76131 MC526L eh12a MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR tg321 PJ 909 inverter LS600
SN76670 Abstract: sn76131 SNF10 The Integrated Circuits Catalog for Design Engineers SN76005 inverter welder schematic inverter LS600 sn76630 SN76660 sn76013 Text: $4*-5 The Integrated Circuits Catalog for Design Engineers First Edition T e x a s In s t r u m e n t s INCORPORATED CC-401 10072-41-US Printed in U.S.A. G ENERAL IN FO R M A TIO N INDEXES Numerical • Functional • Cross-Reference DISCRETE SEMICONDUCTORS A N D COMPONENTS	OCR Scan	PDF	CC-401 10072-41-US 54S/74S 54H/74H 54L/74L TIH101 SN76670 sn76131 SNF10 The Integrated Circuits Catalog for Design Engineers SN76005 inverter welder schematic inverter LS600 sn76630 SN76660 sn76013
GFB7400D Abstract: FEY101B TCA290A Rifa pmr 2026 EF184 ORP52 Mullard Mullard quick reference guide GZF1200 ITT A2610 YD 6409 Text: AN INTRODUCTION TO: Cartwright ELECTRONIC COMPONENTS 517 LAWMOOR STREET DIXONS BLAZES INDUSTRIAL ESTATE GLASGOW G5 041-429 7771 Cartwright Electronic Components started trading in April, 1971 as the electronics division of John T. Cartwright & Sons ERD North Ltd . From very modest	OCR Scan	PDF
RSN 3306 H Abstract: ITT RZ2 g6 TDA 8841 IC rsn 3404 SN76670 4L71 bu 2508 af equivalent MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR sn76131 a1208 transistor Text: G ENERAL IN FO R M A TIO N INDEXES Numerical • Functional • Cross-Reference DISCRETE SEMICONDUCTORS A N D COMPONENTS O R D ER IN G INSTRUCTIO NS A N D M EC HA NICA L D ATA MACH IV PROCUREMENT SPECIFICATION L IN EA R CIRCUITS ECL CIRCUITS SERIES 54S/74S CIRCUITS	OCR Scan	PDF	54S/74S RSN 3306 H ITT RZ2 g6 TDA 8841 IC rsn 3404 SN76670 4L71 bu 2508 af equivalent MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR sn76131 a1208 transistor

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S8855 Search Results

S8855 Price and Stock

Vox Power Ltd NEVO-600S-8855-DK000

TE Connectivity CS8855-000

TE Connectivity 55PC6292-24-MST7-9CS3296

Fortune Semiconductor Corp FS8855B

S8855 Datasheets (1)

S8855 Datasheets Context Search

S8855

7400A

RFM70U12D

MT4S300T

MT3S111P

TGI8596-50

2sc5066

MDM 6600

RFM70U12D

TGI7785-120L

Untitled

S8855

Untitled

JS8834-AS

FZK101

SN7441

EPM5130

74L47

SN76670

GFB7400D

RSN 3306 H