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    Integrated Device Technology Inc ICS83054AGILFT

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    Flip Electronics ICS83054AGILFT 1,312
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    Integrated Circuit Systems Inc ICS83054AGI-01LFT

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    Vyrian ICS83054AGI-01LFT 1,587
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    Integrated Circuit Systems Inc ICS83054AGILFT

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    Vyrian ICS83054AGILFT 1,155
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    Integrated Circuit Systems Inc ICS83054AGI-01LF

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    Vyrian ICS83054AGI-01LF 1,152
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    Integrated Circuit Systems Inc ICS83054AGILF

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    Vyrian ICS83054AGILF 829
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    S83054 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    S83054F

    Abstract: S83054 S83054FM1 S8305 scintillator Nal bialkali S-8305 BURLE INDUSTRIES Corning 5-58 PMT-62
    Contextual Info: Return To Product Page S83054F, S83054FM1 Photomultipliers 51-mm 2-Inch Diameter 8-Stage, Head-On PMTs BURLE S83054F and S83054FM1 are two-inch round, 8stage photomultiplier tubes. They employ potassium-cesiumantimonide (bialkali) photocathodes and electron multipliers of the


    Original     		S83054F, S83054FM1 51-mm S83054F S83054FM1 S83054y S83054F S83054 S8305 scintillator Nal bialkali S-8305 BURLE INDUSTRIES Corning 5-58 PMT-62 PDF

    Vishay DaTE CODE 1206-8

    Abstract: AN811 SI5424DC-T1-GE3 1206-8 chipfet layout
    Contextual Info: Si5424DC Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.024 at VGS = 10 V ID (A)a 6 0.030 at VGS = 4.5 V 6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET Qg (Typ.) 11 nC


    Original     		Si5424DC Si5424DC-T1-E3 Si5424DC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 Vishay DaTE CODE 1206-8 AN811 1206-8 chipfet layout PDF

    54AIS

    Contextual Info: Si5404BDC Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.028 at VGS = 4.5 V 7.5 0.039 at VGS = 2.5 V 6.3 Qg (Typ.) 6.3 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		Si5404BDC Si5404BDC-T1-E3 Si5404BDC-T1-GE3 11-Mar-11 54AIS PDF

    SI5433BDC-T1-GE3

    Abstract: Si5433BDC Si5433BDC-T1-E3 Vishay DaTE CODE 1206-8
    Contextual Info: Si5433BDC Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.037 at VGS = - 4.5 V - 6.7 0.050 at VGS = - 2.5 V - 5.9 0.070 at VGS = - 1.8 V - 5.0 Qg (Typ.) 15 • Halogen-free According to IEC 61249-2-21


    Original     		Si5433BDC Si5433BDC-T1-E3 Si5433BDC-T1-GE3 18-Jul-08 Vishay DaTE CODE 1206-8 PDF

    VISHAY MARKING BM

    Abstract: Si5445BDC
    Contextual Info: Si5445BDC Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.033 at VGS = - 4.5 V - 7.1 0.043 at VGS = - 2.5 V - 6.2 0.060 at VGS = - 1.8 V - 5.3 Qg (Typ.) 14 • Halogen-free According to IEC 61249-2-21


    Original     		Si5445BDC Si5445BDC-T1-E3 Si5445BDC-T1-GE3 18-Jul-08 VISHAY MARKING BM PDF

    SI5424DC-T1-GE3

    Abstract: Si5424DC-T1-E3
    Contextual Info: Si5424DC Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.024 at VGS = 10 V ID (A)a 6 0.030 at VGS = 4.5 V 6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET Qg (Typ.) 11 nC


    Original     		Si5424DC Si5424DC-T1-E3 Si5424DC-T1-GE3 18-Jul-08 PDF

    Contextual Info: Si5402BDC Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.035 at VGS = 10 V 6.7 0.042 at VGS = 4.5 V 6.1 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET 1206-8 ChipFET®


    Original     		Si5402BDC Si5402BDC-T1-E3 Si5402BDC-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: Si5475BDC Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY - 12 FEATURES RDS(on) (Ω) ID (A)a 0.028 at VGS = - 4.5 V -6 VDS (V) 0.039 at VGS = - 2.5V -6 0.054 at VGS = - 1.8 V -6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET: 1.8 V Rated


    Original     		Si5475BDC Si5475BDC-T1-E3 Si5475BDC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: Si5445BDC Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.033 at VGS = - 4.5 V - 7.1 0.043 at VGS = - 2.5 V - 6.2 0.060 at VGS = - 1.8 V - 5.3 Qg (Typ.) 14 • Halogen-free According to IEC 61249-2-21


    Original     		Si5445BDC Si5445BDC-T1-E3 Si5445BDC-T1-GE3 11-Mar-11 PDF

    A2V-16

    Contextual Info: Si5445BDC Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.033 at VGS = - 4.5 V - 7.1 0.043 at VGS = - 2.5 V - 6.2 0.060 at VGS = - 1.8 V - 5.3 Qg (Typ.) 14 • Halogen-free According to IEC 61249-2-21


    Original     		Si5445BDC Si5445BDC-T1-E3 Si5445BDC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 A2V-16 PDF

    Contextual Info: Si5441BDC Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 6.1 - 20 0.052 at VGS = - 3.6 V - 5.7 0.080 at VGS = - 2.5 V - 4.6 Qg (Typ.) 11.5 • Halogen-free According to IEC 61249-2-21


    Original     		Si5441BDC Si5441BDC-T1-E3 Si5441BDC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: Si5441BDC Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 6.1 - 20 0.052 at VGS = - 3.6 V - 5.7 0.080 at VGS = - 2.5 V - 4.6 Qg (Typ.) 11.5 • Halogen-free According to IEC 61249-2-21


    Original     		Si5441BDC Si5441BDC-T1-E3 Si5441BDC-T1-GE3 11-Mar-11 PDF

    Si5404BDC

    Abstract: Si5404BDC-T1-E3
    Contextual Info: Si5404BDC Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.028 at VGS = 4.5 V 7.5 0.039 at VGS = 2.5 V 6.3 Qg (Typ.) 6.3 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		Si5404BDC Si5404BDC-T1-E3 Si5404BDC-T1-GE3 18-Jul-08 PDF

    Contextual Info: Si5424DC Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.024 at VGS = 10 V ID (A)a 6 0.030 at VGS = 4.5 V 6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET Qg (Typ.) 11 nC


    Original     		Si5424DC Si5424DC-T1-E3 Si5424DC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    1206 8 ChipFET

    Contextual Info: Si5475BDC Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY - 12 FEATURES RDS(on) (Ω) ID (A)a 0.028 at VGS = - 4.5 V -6 VDS (V) 0.039 at VGS = - 2.5V -6 0.054 at VGS = - 1.8 V -6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET: 1.8 V Rated


    Original     		Si5475BDC Si5475BDC-T1-E3 Si5475BDC-T1-GE3 11-Mar-11 1206 8 ChipFET PDF

    TSOP 48 thermal resistance

    Abstract: Vishay DaTE CODE 1206-8
    Contextual Info: Si5433BDC Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.037 at VGS = - 4.5 V - 6.7 0.050 at VGS = - 2.5 V - 5.9 0.070 at VGS = - 1.8 V - 5.0 Qg (Typ.) 15 • Halogen-free According to IEC 61249-2-21


    Original     		Si5433BDC Si5433BDC-T1-E3 Si5433BDC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 TSOP 48 thermal resistance Vishay DaTE CODE 1206-8 PDF

    Contextual Info: Si5445BDC Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.033 at VGS = - 4.5 V - 7.1 0.043 at VGS = - 2.5 V - 6.2 0.060 at VGS = - 1.8 V - 5.3 Qg (Typ.) 14 • Halogen-free According to IEC 61249-2-21


    Original     		Si5445BDC Si5445BDC-T1-E3 Si5445BDC-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Si5402BDC

    Abstract: Si5402BDC-T1-GE3
    Contextual Info: Si5402BDC Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.035 at VGS = 10 V 6.7 0.042 at VGS = 4.5 V 6.1 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET 1206-8 ChipFET®


    Original     		Si5402BDC Si5402BDC-T1-E3 Si5402BDC-T1-GE3 18-Jul-08 PDF

    Si5401DC

    Abstract: Si5401DC-T1-E3
    Contextual Info: Si5401DC Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.032 at VGS = - 4.5 V - 7.1 - 20 0.040 at VGS = - 2.5 V - 6.4 0.053 at VGS = - 1.8 V - 5.5 Qg (Typ.) 16.5 • Halogen-free According to IEC 61249-2-21


    Original     		Si5401DC Si5401DC-T1-E3 Si5401Dlectual 18-Jul-08 PDF

    Si5475BDC-T1-GE3

    Abstract: Si5475BDC Si5475BDC-T1-E3
    Contextual Info: Si5475BDC Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY - 12 FEATURES RDS(on) (Ω) ID (A)a 0.028 at VGS = - 4.5 V -6 VDS (V) 0.039 at VGS = - 2.5V -6 0.054 at VGS = - 1.8 V -6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET: 1.8 V Rated


    Original     		Si5475BDC Si5475BDC-T1-E3 Si5475BDC-T1-GE3 18-Jul-08 PDF

    Contextual Info: Si5441BDC Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 6.1 - 20 0.052 at VGS = - 3.6 V - 5.7 0.080 at VGS = - 2.5 V - 4.6 Qg (Typ.) 11.5 • Halogen-free According to IEC 61249-2-21


    Original     		Si5441BDC Si5441BDC-T1-E3 Si5441BDC-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: Si5475BDC Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY - 12 FEATURES RDS(on) (Ω) ID (A)a 0.028 at VGS = - 4.5 V -6 VDS (V) 0.039 at VGS = - 2.5V -6 0.054 at VGS = - 1.8 V -6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET: 1.8 V Rated


    Original     		Si5475BDC Si5475BDC-T1-E3 Si5475BDC-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: Si5404BDC Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.028 at VGS = 4.5 V 7.5 0.039 at VGS = 2.5 V 6.3 Qg (Typ.) 6.3 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		Si5404BDC Si5404BDC-T1-E3 Si5404BDC-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    S83054

    Contextual Info: Si5402BDC Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.035 at VGS = 10 V 6.7 0.042 at VGS = 4.5 V 6.1 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET 1206-8 ChipFET®


    Original     		Si5402BDC Si5402BDC-T1-E3 Si5402BDC-T1-GE3 11-Mar-11 S83054 PDF