S8228 Search Results
S8228 Price and Stock
Powerex Power Semiconductors RDS82280XXDIODE STANDARD 2200V 8000A |
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RDS82280XX | Bulk | 1 |
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TE Connectivity PAS82-28-02-1-BPAS82-28-02-1-B |
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PAS82-28-02-1-B | Bulk | 50 |
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PAS82-28-02-1-B | Bulk | 111 Weeks | 50 |
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PAS82-28-02-1-B |
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PAS82-28-02-1-B |
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Vox Power Ltd NEVO-600S-8228-DK000AC/DC CNV 2X24V 2X12V 2X24V 450W |
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NEVO-600S-8228-DK000 | Box | 15 |
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TE Connectivity 202D253-3-22-0-CS8228- Bulk (Alt: 808502N001) |
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202D253-3-22-0-CS8228 | Bulk | 111 Weeks | 100 |
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202D253-3-22-0-CS8228 |
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Chicago Pneumatic S822 (8940164285)ACCESSORY, IMPACT SOCKET, S822 1" DR STD 1-3/8 | Chicago Pneumatic Tools S822 |
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S822 (8940164285) | Bulk | 5 Weeks | 1 |
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S8228 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 1.0 Product Description The R S8228 Octal ATM Transm ission Convergence TC PH Y device dram ati cally increases the level o f integration for switches and access systems. The R S8228 integrates all o f the ATM Layer processing functions found in the ATM |
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S8228 af-phy0043 RS8228 N8228DSA | |
Contextual Info: SiR468DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0057 at VGS = 10 V 40 0.0076 at VGS = 4.5 V 40 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.) |
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SiR468DP SiR468DP-T1-GE3 11-Mar-11 | |
Contextual Info: SUD50P06-15 Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.015 at VGS = - 10 V - 50d 0.020 at VGS = - 4.5 V d - 50 • Halogen-free • TrenchFET Power MOSFET RoHS COMPLIANT APPLICATIONS • Load Switch |
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SUD50P06-15 O-252 SUD50P06-15-GE3 11-Mar-11 | |
Contextual Info: SiR468DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0057 at VGS = 10 V 40 0.0076 at VGS = 4.5 V 40 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.) |
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SiR468DP SiR468DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
si4944dy-t1-e3Contextual Info: Si4944DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0095 at VGS = 10 V 12.2 0.016 at VGS = 4.5 V 9.4 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested RoHS COMPLIANT |
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Si4944DY Si4944DY-T1-E3 Si4944DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: Si4944DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0095 at VGS = 10 V 12.2 0.016 at VGS = 4.5 V 9.4 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested RoHS COMPLIANT |
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Si4944DY Si4944DY-T1-E3 Si4944DY-T1-GE3 11-Mar-11 | |
Contextual Info: SiR850DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.007 at VGS = 10 V 30a 0.009 at VGS = 4.5 V a VDS (V) 25 30 • • • • Qg (Typ.) 8.4 nC Halogen-free TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS Tested |
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SiR850DP SiR850DP-T1-GE3 11-Mar-11 | |
A1930Contextual Info: SiR850DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.007 at VGS = 10 V 30a 0.009 at VGS = 4.5 V a VDS (V) 25 30 • • • • Qg (Typ.) 8.4 nC Halogen-free TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS Tested |
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SiR850DP SiR850DP-T1-GE3 11-Mar-11 A1930 | |
SUD50P06-15
Abstract: c495-0
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SUD50P06-15 O-252 SUD50P06-15-GE3 11-Mar-11 SUD50P06-15 c495-0 | |
SiR850DP-T1-GE3Contextual Info: SiR850DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.007 at VGS = 10 V 30a 0.009 at VGS = 4.5 V a VDS (V) 25 30 • • • • Qg (Typ.) 8.4 nC Halogen-free TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS Tested |
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SiR850DP SiR850DP-T1-GE3 15lectual 18-Jul-08 | |
Contextual Info: SiR468DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0057 at VGS = 10 V 40 0.0076 at VGS = 4.5 V 40 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.) |
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SiR468DP SiR468DP-T1-GE3 18-Jul-08 | |
Contextual Info: SiR468DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0057 at VGS = 10 V 40 0.0076 at VGS = 4.5 V 40 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.) |
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SiR468DP SiR468DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: SiR850DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.007 at VGS = 10 V 30a 0.009 at VGS = 4.5 V a VDS (V) 25 30 • • • • Qg (Typ.) 8.4 nC Halogen-free TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS Tested |
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SiR850DP SiR850DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: New Product SiR492DP Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.0038 at VGS = 4.5 V 40 0.0047 at VGS = 2.5 V 40 VDS (V) 12 Qg (Typ.) 41 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm • Secondary Synchronous Rectification |
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SiR492DP SiR492DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: SiR468DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0057 at VGS = 10 V 40 0.0076 at VGS = 4.5 V 40 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.) |
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SiR468DP SiR468DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
SC75-6L
Abstract: 82286
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SiB419DK SC-75 SC-75-6L-Single SiB419DK-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SC75-6L 82286 | |
Contextual Info: Si4421DY Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.00875 at VGS = - 4.5 V - 14 0.01075 at VGS = - 2.5 V - 12 0.0135 at VGS = - 1.8 V - 11 • Halogen-free Option Available • TrenchFET Power MOSFET |
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Si4421DY Si4421DY-T1-E3 Si4421DY-T1-GE3 11-Mar-11 | |
SO8 C_22Contextual Info: Si4421DY Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.00875 at VGS = - 4.5 V - 14 0.01075 at VGS = - 2.5 V - 12 0.0135 at VGS = - 1.8 V - 11 • Halogen-free Option Available • TrenchFET Power MOSFET |
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Si4421DY Si4421DY-T1-E3 Si4421DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SO8 C_22 | |
Si4944DY-T1-E3
Abstract: Si4944DY
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Si4944DY Si4944DY-T1-E3 Si4944DY-T1-GE3 18-Jul-08 | |
Si4421DY
Abstract: Si4421DY-T1-E3
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Si4421DY Si4421DY-T1-E3 Si4421DY-T1-GE3 20lectual 18-Jul-08 | |
82288
Abstract: SiR492DP
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SiR492DP SiR492DP-T1-GE3 18-Jul-08 82288 | |
SC-75
Abstract: SiB419DK SiB419DK-T1-GE3
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SiB419DK SC-75 SC-75-6L-Single SiB419DK-T1-GE3 11-Mar-11 | |
SiR462DP
Abstract: SiR462DP-T1-GE3
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SiR462DP SiR462DP-T1-GE3 18-Jul-08 | |
Contextual Info: New Product SiB419DK Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)f, g 0.060 at VGS = - 4.5 V -9 0.082 at VGS = - 2.5 V -9 0.114 at VGS = - 1.8 V -2 VDS (V) - 12 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® |
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SiB419DK SC-75 SC-75-6L-Single SiB419DK-T1-GE3 11-Mar-11 |