Untitled
Abstract: No abstract text available
Text: SiR468DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0057 at VGS = 10 V 40 0.0076 at VGS = 4.5 V 40 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)
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SiR468DP
SiR468DP-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: SUD50P06-15 Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.015 at VGS = - 10 V - 50d 0.020 at VGS = - 4.5 V d - 50 • Halogen-free • TrenchFET Power MOSFET RoHS COMPLIANT APPLICATIONS • Load Switch
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SUD50P06-15
O-252
SUD50P06-15-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: SiR468DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0057 at VGS = 10 V 40 0.0076 at VGS = 4.5 V 40 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)
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SiR468DP
SiR468DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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si4944dy-t1-e3
Abstract: No abstract text available
Text: Si4944DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0095 at VGS = 10 V 12.2 0.016 at VGS = 4.5 V 9.4 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested RoHS COMPLIANT
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Si4944DY
Si4944DY-T1-E3
Si4944DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si4944DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0095 at VGS = 10 V 12.2 0.016 at VGS = 4.5 V 9.4 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested RoHS COMPLIANT
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Si4944DY
Si4944DY-T1-E3
Si4944DY-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: SiR850DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.007 at VGS = 10 V 30a 0.009 at VGS = 4.5 V a VDS (V) 25 30 • • • • Qg (Typ.) 8.4 nC Halogen-free TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS Tested
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SiR850DP
SiR850DP-T1-GE3
11-Mar-11
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A1930
Abstract: No abstract text available
Text: SiR850DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.007 at VGS = 10 V 30a 0.009 at VGS = 4.5 V a VDS (V) 25 30 • • • • Qg (Typ.) 8.4 nC Halogen-free TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS Tested
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SiR850DP
SiR850DP-T1-GE3
11-Mar-11
A1930
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SUD50P06-15
Abstract: c495-0
Text: SUD50P06-15 Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.015 at VGS = - 10 V - 50d 0.020 at VGS = - 4.5 V d - 50 • Halogen-free • TrenchFET Power MOSFET RoHS COMPLIANT APPLICATIONS • Load Switch
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SUD50P06-15
O-252
SUD50P06-15-GE3
11-Mar-11
SUD50P06-15
c495-0
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SiR850DP-T1-GE3
Abstract: No abstract text available
Text: SiR850DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.007 at VGS = 10 V 30a 0.009 at VGS = 4.5 V a VDS (V) 25 30 • • • • Qg (Typ.) 8.4 nC Halogen-free TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS Tested
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SiR850DP
SiR850DP-T1-GE3
15lectual
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: SiR468DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0057 at VGS = 10 V 40 0.0076 at VGS = 4.5 V 40 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)
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SiR468DP
SiR468DP-T1-GE3
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: SiR468DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0057 at VGS = 10 V 40 0.0076 at VGS = 4.5 V 40 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)
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Original
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PDF
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SiR468DP
SiR468DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SiR850DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.007 at VGS = 10 V 30a 0.009 at VGS = 4.5 V a VDS (V) 25 30 • • • • Qg (Typ.) 8.4 nC Halogen-free TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS Tested
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SiR850DP
SiR850DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product SiR492DP Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.0038 at VGS = 4.5 V 40 0.0047 at VGS = 2.5 V 40 VDS (V) 12 Qg (Typ.) 41 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm • Secondary Synchronous Rectification
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Original
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SiR492DP
SiR492DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si4421DY Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.00875 at VGS = - 4.5 V - 14 0.01075 at VGS = - 2.5 V - 12 0.0135 at VGS = - 1.8 V - 11 • Halogen-free Option Available • TrenchFET Power MOSFET
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Si4421DY
Si4421DY-T1-E3
Si4421DY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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SC75-6L
Abstract: 82286
Text: New Product SiB419DK Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)f, g 0.060 at VGS = - 4.5 V -9 0.082 at VGS = - 2.5 V -9 0.114 at VGS = - 1.8 V -2 VDS (V) - 12 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®
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SiB419DK
SC-75
SC-75-6L-Single
SiB419DK-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SC75-6L
82286
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Untitled
Abstract: No abstract text available
Text: Si4421DY Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.00875 at VGS = - 4.5 V - 14 0.01075 at VGS = - 2.5 V - 12 0.0135 at VGS = - 1.8 V - 11 • Halogen-free Option Available • TrenchFET Power MOSFET
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Si4421DY
Si4421DY-T1-E3
Si4421DY-T1-GE3
11-Mar-11
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SO8 C_22
Abstract: No abstract text available
Text: Si4421DY Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.00875 at VGS = - 4.5 V - 14 0.01075 at VGS = - 2.5 V - 12 0.0135 at VGS = - 1.8 V - 11 • Halogen-free Option Available • TrenchFET Power MOSFET
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Si4421DY
Si4421DY-T1-E3
Si4421DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SO8 C_22
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Si4944DY-T1-E3
Abstract: Si4944DY
Text: Si4944DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0095 at VGS = 10 V 12.2 0.016 at VGS = 4.5 V 9.4 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested RoHS COMPLIANT
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Si4944DY
Si4944DY-T1-E3
Si4944DY-T1-GE3
18-Jul-08
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Si4421DY
Abstract: Si4421DY-T1-E3
Text: Si4421DY Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.00875 at VGS = - 4.5 V - 14 0.01075 at VGS = - 2.5 V - 12 0.0135 at VGS = - 1.8 V - 11 • Halogen-free Option Available • TrenchFET Power MOSFET
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Si4421DY
Si4421DY-T1-E3
Si4421DY-T1-GE3
20lectual
18-Jul-08
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82288
Abstract: SiR492DP
Text: New Product SiR492DP Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.0038 at VGS = 4.5 V 40 0.0047 at VGS = 2.5 V 40 VDS (V) 12 Qg (Typ.) 41 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm • Secondary Synchronous Rectification
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SiR492DP
SiR492DP-T1-GE3
18-Jul-08
82288
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SC-75
Abstract: SiB419DK SiB419DK-T1-GE3
Text: New Product SiB419DK Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)f, g 0.060 at VGS = - 4.5 V -9 0.082 at VGS = - 2.5 V -9 0.114 at VGS = - 1.8 V -2 VDS (V) - 12 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®
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SiB419DK
SC-75
SC-75-6L-Single
SiB419DK-T1-GE3
11-Mar-11
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SiR462DP
Abstract: SiR462DP-T1-GE3
Text: SiR462DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0079 at VGS = 10 V 30a 0.010 at VGS = 4.5 V a 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)
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SiR462DP
SiR462DP-T1-GE3
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: New Product SiB419DK Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)f, g 0.060 at VGS = - 4.5 V -9 0.082 at VGS = - 2.5 V -9 0.114 at VGS = - 1.8 V -2 VDS (V) - 12 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®
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Original
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SiB419DK
SC-75
SC-75-6L-Single
SiB419DK-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: 1.0 Product Description The R S8228 Octal ATM Transm ission Convergence TC PH Y device dram ati cally increases the level o f integration for switches and access systems. The R S8228 integrates all o f the ATM Layer processing functions found in the ATM
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OCR Scan
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S8228
af-phy0043
RS8228
N8228DSA
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