S8010 Search Results

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Contextual Info: DESCRIPTION REV PRODUCT NO SEE TABLE •DIM Y REFNOTE . \ REVO DATE BY ECR S70065 BS LOW 18MAR97 ECR S70117 BS LOW 25APR97 ECR S70171 BS LOW 30MAY97 ECR S80109 BS LOW 13MAY98 NOTE É È É POS V ■V 4,0 2,0 *0.13 O o 'W W- W fftw Uff irt ÏÏ4 p T POS

500119

Contextual Info: JL A. _ u _ DESCRIPTION PRODUCT NO ECR S 7 00 65 SEE TAB LE NOTE REV'D BY BS LOW DATE 18MAR97 ECR S70117 BS LOW 25APR97 ECR S70171 BS LOW 30MAY97 ECR S80109 BS LOW 13MAY98 ECR 500119 JPEH 20JUN00 POS 4 [ÏÏ2 POS 2,0 ‘0,25 T Y P NON-ACCUM DIM X o A *0,2 ON TIP

SUD50NP04-77P

Abstract: TO-252-4L 74439 complementary MOSFET TO252
Contextual Info: New Product SUD50NP04-77P Vishay Siliconix Complementary N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 40 - 40 rDS(on) (Ω) ID (A)a Qg (Typ.) 0.037 at VGS = 10 V 8 0.046 at VGS = 4.5 V 8 0.040 at VGS = - 10 V -8 0.050 at VGS = - 4.5 V

SUB70N06-14-E3

Contextual Info: SUP/SUB70N06-14 Vishay Siliconix N-Channel 60-V D-S , 175 °C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 60 0.014 70a Pb-free Available RoHS* COMPLIANT TO-220AB D TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB70N06-14 Top View N-Channel MOSFET

S6025

Abstract: S1055M S8025 S4008 S0525 S4025 SCR S1055m S8055R S1070W S6020
Contextual Info: * es D ag ZE k I c Pa GN 9 d O te 63 c le EC E71 e S .R e# .L Fil U TO-92 TO-218AC TO-202AB TO-218X A THERMOTAB TO-220AB K G SCRs 1 – 70 Amps 6 General Description Variations of devices covered in this data sheet are available for custom design applications. Please consult the factory for more

SUM110N05-06L

Abstract: SUM110N05-06L-E3
Contextual Info: SUM110N05-06L Vishay Siliconix N-Channel 55-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 55 rDS(on) (Ω) ID (A) 0.006 at VGS = 10 V 110 0.0085 at VGS = 4.5 V 92 Qg (Typ) 65 • TrenchFET Power MOSFET • 175 °C Junction Temperature • Low Thermal Resistance Package

SUM110N06-06

Abstract: SUM110N06-06-E3
Contextual Info: SUM110N06-06 Vishay Siliconix N-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 60 0.006 110a • TrenchFET Power MOSFET • 175 °C Junction Temperature Available RoHS* COMPLIANT APPLICATIONS • Industrial D

SUM110N04-04

Abstract: SUM110N04-04-E3
Contextual Info: SUM110N04-04 Vishay Siliconix N-Channel 40-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 40 0.0035 at VGS = 10 V 110a • TrenchFET Power MOSFET • 175 °C Junction Temperature Available RoHS* COMPLIANT TO-263 D G G D S

S4020L

Abstract: thyristor k 202 s6015l S6010 SCR S6025L s6065k E617 thyristor T 218 N S2006L S2006V
Contextual Info: s ge ka * L. U. ED Z NI G 39 CO 716 E R #E ed ct le Se c Pa Fi le E6 TO-263 D 2 Pak TO-92 *TO-218 TO-252 D-Pak TO-202 *TO-218X 3-lead Compak *TO-220 TO-251 V-Pak A K G SCRs 1 A to 70 A E6 General Description The Teccor line of thyristor SCR semi-conductors are half-wave,

8011 f2

Abstract: da 8012 VS8011 VS8022
Contextual Info: VITESSE FEATURES • Serial data: up to 1.25 Gb/s • E C L 100K/10KH compatible parallel data inputs/outputs • Standard E C L power supplies: VEE = -5.2 V ± 0.26 V, Vj j = -2.0 V ± 0.1 V • S8010: 8 bit Mux/Demux and SONET frame detection and recovery

TRIAC zo 607 MA

Abstract: ZO 607 TRIAC Westinghouse SCR handbook tl-130 transformer BRX49 equivalent 800w class d circuit diagram schematics triac MAC 97 AB triac MAC 97 A6 ZO 103 TRIAC 1N5760
Contextual Info: DL137/D Rev. 7, May-2000 Thyristor Device Data TRIACs, SCRs, Surge Suppressors, and Triggers ON Semiconductor Thyristor Device Data TRIACs, SCRs, Surge Suppressors, and Triggers DL137/D Rev. 7, May–2000  SCILLC, 2000 Previous Edition  1995 “All Rights Reserved’’

e616

Abstract: SK040R ES35A SK025N S4010R
Contextual Info: s ge ka * L. U. ED Z NI G 39 CO 716 E R #E ed ct le Se c Pa Fi le E6 TO-263 D 2 Pak TO-92 *TO-218 TO-252 D-Pak TO-202 *TO-218X 3-lead Compak *TO-220 TO-251 V-Pak A K G SCRs 1 A to 70 A E6 General Description The Teccor line of thyristor SCR semi-conductors are half-wave,

1A20A

Abstract: teccor thyristor s8015l e526 E521 S2008L S4010R
Contextual Info: * ess* D aagge ZEED k c k IIZ Paac N d P GN 9 teted OOG166339 c leec ECC 771 SSeel . RRE ##EE L . iliele U.L FF E6 U TO-263 D 2 Pak TO-92 TO-218 TO-252 D-Pak TO-202 TO-218X A 3-Leaded Surface Mount Compak K TO-220 TO-251 V-Pak G SCRs 1 A to 70 A E5 General Description

teccor thyristor s4015l

Abstract: thyristor S6065K SK055R S8040N thyristor 325 V 8A ,THYRISTOR s2065j s401e Thyristor thyristor S8020L SK025N S4010R
Contextual Info: l Se ec ag * es ED Z NI G 39 CO 716 E R #E te L. U. k ac d P le Fi E6 TO-263 D 2 Pak TO-92 TO-218 TO-252 D-Pak TO-202 TO-218X 3-Leaded Surface Mount Compak TO-220 MT2 MT1 TO-251 V-Pak G SCRs 1 A to 70 A E6 General Description The Teccor line of thyristor SCR semi-conductors are half-wave,

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

SUD50NP04-77P

Contextual Info: New Product SUD50NP04-77P Vishay Siliconix Complementary N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 40 - 40 rDS(on) (Ω) ID (A)a Qg (Typ.) 0.037 at VGS = 10 V 8 0.046 at VGS = 4.5 V 8 0.040 at VGS = - 10 V -8 0.050 at VGS = - 4.5 V

SUM110N10-09

Abstract: SUM110N10-09-E3
Contextual Info: SUM110N10-09 Vishay Siliconix N-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 100 0.0095 at VGS = 10 V 110a • TrenchFET Power MOSFET • New Package with Low Thermal Resistance • 100 % Rg Tested Available

Contextual Info: New Product Si4561DY Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 40 P-Channel - 40 rDS(on) (Ω) ID (A)a 0.0355 at VGS = 10 V 6.8 0.0425 at VGS = 4.5 V 6.2 0.035 at VGS = - 10 V - 7.2 0.047 at VGS = - 4.5 V

SUM110N02-03

Abstract: SUM110N02-03-E3
Contextual Info: SUM110N02-03 Vishay Siliconix N-Channel 20-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A)a 20 0.0026 at VGS = 10 V 110a • • • • TrenchFET Power MOSFET 175 °C Junction Temperature Low Thermal Resistance Package High Threshold Voltage

SUM110N08-05

Abstract: SUM110N08-05-E3
Contextual Info: SUM110N08-05 Vishay Siliconix N-Channel 75-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 75 0.0048 at VGS = 10 V 110a • TrenchFET Power MOSFETS • Low Thermal Resistance Package Available RoHS* COMPLIANT APPLICATIONS

SUM110N04-02L

Abstract: SUM110N04-02L-E3 s8010
Contextual Info: SUM110N04-02L Vishay Siliconix N-Channel 40-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (Ω) 0.0023 at VGS = 10 V 0.0038 at VGS = 4.5 V ID (A) 110 • TrenchFET Power MOSFET • New Package with Low Thermal Resistance Available

S6025L

Abstract: S8016N S6016R S6020L S2055N equivalent S6065J S4010R teccor thyristor s4015l S4006F1 S6006F1
Contextual Info: s ge ka * L. U. ED Z NI G 39 CO 716 E R #E ed ct le Se c Pa Fi le E6 TO-263 D 2 Pak TO-92 *TO-218 TO-252 D-Pak TO-202 *TO-218X 3-lead Compak *TO-220 TO-251 V-Pak A K G SCRs 1 A to 70 A E6 General Description The Teccor line of thyristor SCR semi-conductors are half-wave,

Contextual Info: SUM110N08-05 Vishay Siliconix N-Channel 75-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 75 0.0048 at VGS = 10 V 110a • TrenchFET Power MOSFETS • Low Thermal Resistance Package Available RoHS* COMPLIANT APPLICATIONS

S-8111

Abstract: S-8011 S-8110 S-8000 S-8010 S8030
Contextual Info: COPAL ELECTRONICS ROTARY CODED SWITCHES S-8000 INTERNAL STRUCTURE RoHS compliant 1 3 2 7 4 5 6 Part name • FEATURES ● Lead-free soldering ● 3 bits 8 positions type ● Protection against dust and washable after soldering ● DIP-pin configuration: 2.54 mm pitch