S72 TRANSISTOR Search Results

pin configuration Bc327

Abstract: BC307B BC327 BC327-10 BC327-16 BC327-25 BC327-40 BC557 BC557A BC557C
Contextual Info: — CONTINENTAL DEVICE INDIA L.3E D • GG00124 S72 M C D I L TO-92 PLASTIC PACKAGE TRANSISTORS PNP Type No. BC307B (Ta=25°C, Unless Otherwise Specified) Electrical Characteristics Maximum Ratings VC80 VCEO V EBO 'CBO (V) Min (V) Min 00 Min (UA) Max 50

transistor SMD s72

Abstract: S72 SMD smd s72 smd transistor s72 smd transistor marking S72 smd marking S72 SmD s72 2N7002 transistor marking s72 2N7002 S72 SOT-23 2N7002 SOT-23
Contextual Info: Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Company NPN CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 2N7002 PIN COFIGURATION G= GATE S= SOURCE SOT-23 Formed SMD Package D= DRAIN Marking 2N7002=S72 Designed for High Speed Pulse Amplifier and Drive Application

BCG36

Abstract: bc557 SALJ TO-92-4pin BC327-10 to-92-4
Contextual Info: — CONTINENTAL DEVICE INDIA L.3E D • GG00124 S72 M C D I L TO-92 PLASTIC PACKAGE TRANSISTORS PNP Type No. BC307B (Ta=25°C, Unless Otherwise Specified) Electrical Characteristics Maximum Ratings VC80 VCEO V EBO 'CBO (V) Min (V) Min 00 Min (UA) Max 50

BC557

Abstract: BCG36 BC307B BC327 BC327-10 BC327-16 BC327-25 BC327-40 BC557A BC557B
Contextual Info: — CONTINENTAL DEVICE INDIA L.3E D • GG00124 S72 M C D I L TO-92 PLASTIC PACKAGE TRANSISTORS PNP Type No. BC307B (Ta=25°C, Unless Otherwise Specified) Electrical Characteristics Maximum Ratings VC80 VCE0 V EB0 'CBO (V) Min (V) Min 00 Min (UA) Max 50

s72 sot 23

Abstract: transistor marking s72 2N7019 2N7002 MARKING s72 2N7002 S72 SOT-23 s72 SOT23 Transistor s72 sot23 2n7002 transistor s72 S72 Transistor
Contextual Info: N & P CHANNEL MOSFETS ENHANCEMENT MODE N CHANNEL SOT-23 Cont. D-S Drain Voltage Current Type Marking V max A max BS870 S70 60 0.25 2N7002 S72 60 0.25 *: Pulse test width 80µs, 1% duty factor. Pwr. Dispn. TC=25˚C W max 0.31 0.31 Gate Thr. Volt. VGS=VDS ID=ImA

D1071

Abstract: D2072
Contextual Info: MOTOROL A SC XS TR S/R F 1 2 E D | b 3 b 7 2 S 4 a 0 ât,S72 1 | QUAD DUAL IN-LINE NPN HERMETIC SILICON AMPLIFIER TRANSISTORS MHQ2484, H, HX, HXV . . . d e s ig n e d f o r l o w - l e v e l, h ig h - g a in a m p li f i e r a p p lic a tio n s . 2 .0 d B T y p @ l e =

K72 so

Abstract: transistor s72 S72 marking transistor marking s72 marking 702 2N7002-01 k72 sot 23 TRANSISTOR S72 Transistor
Contextual Info: 2N7002-01 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Low On-Resistance: 2.5£2 Low Threshold: 2.1V Low Input Capacitance: 22pF Fast Switching Speed: 7.0ns Low Input/Output Leakage SOT-23 - H : h“ A TOP VIEW l2l , lîl Mechanical Data Case: SO T-23, Molded Plastic

k72 transistor sot 23

Abstract: transistor marking s72 k72 sot-23 transistor s72 k72 sot 23 k72 transistor S72 transistor S72 marking 702 TRANSISTOR sot-23 K72 SOT23
Contextual Info: 2N7002-01 VISHAY N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR LITEM ZI y POWER SEMICONDUCTOR Features Low On-Resistance: 2.5Q Low Threshold: 2.1V Low Input Capacitance: 22pF Fast Switching Speed: 7.0ns Low Input/Output Leakage SOT-23 ~ *\ : h - A TOP VIEW

S72 2n7002

Abstract: 2N7002 MARKING s72 transistor marking s72 2N7002 S72 SOT-23 2N7002 2N7002 MARKING S72 marking s72 sot 23 transistor s72 marking s72
Contextual Info: 2N7002 DMOS Transistors N-Channel FEATURES SOT-23 ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ .122 (3.1) .118 (3.0) .016 (0.4) Top View .016 (0.4) .045 (1.15) .037 (0.95) .037(0.95) .037(0.95) .007 (0.175) .005 (0.125) 2 max. .004 (0.1) 1 .056 (1.43) .052 (1.33) 3 .102 (2.6)

s72 sot 23

Abstract: S72 marking marking code S72 SOT23 sot-23 marking S72 s72 sot23 mosfet s72 s72 mosfet transistor marking s72 LT2N7002 Marking Code S72
Contextual Info: LT2N7002 N-Channel 60V Power MOSFET GENERAL DESCRIPTION FEATURES The LT2N7002 is the N-Channel enhancement mode field effect ● 60V / 0.50A , RDS ON = 5.0Ω@VGS=10V ● 60V / 0.30A , RDS(ON)= 5.5Ω@VGS=4.5V ● Super high density cell design for extremely

2n7002

Abstract: S72 2n7002 transistor s72 2N7002 MARKING s72 2N7002 MARKING 2N7002C s72 sot 23
Contextual Info: 2N7002 N-Channel Enhancement Mode DMOS Transistor Features - high input impedance - high-speed switching - no minority carrier storage time - CMOS logic compatible input - no thermal runaway - no secondary breakdown Pin configuration 1 = Drain, 2 = Gate, 3 = Source.

transistor s72

Abstract: transistor marking s72 2N7002
Contextual Info: 2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR POWER SEMICONDUCTOR Features • • • • • Low On-Resistance: RDS ON Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage SOT-23 A D TOP VIEW Mechanical Data

Contextual Info: 2N7002 DMOS Transistors N-Channel FEATURES SOT -23 High input impedance High-speed switching No minority carrier storage time CMOS logic compatible input No m inority carrier storage tim e C M O S logic com patible input No thermal runaway No secondary breakdown

Contextual Info: SIEMENS NPN Silicon Darlington Transistors BSP 50 . BSP 52 • High collector current • Low collector-emitter saturation voltage • Complementary types: BSP 60 . BSP 62 PNP Type Marking Ordering Code (tape and reel) Piti Coni ¡gura ion 1 2 3 4 Package1)

transistor s72

Abstract: S72 Transistor KS621K40A41 transistor b 1417 transistor s70 powerex ks62
Contextual Info: PUMEVZGf KS621K40A41 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Single Darlington Transistor Module 400 Amperes/1000 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power

Contextual Info: BD131 _ y v _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR N-P-N transistor in a SOT-32 plastic envelope for general purpose, medium power applications. P-N-P complement is BD132. Q U ICK R E F E R E N C E D A TA Collector-base voltage open emitter

transistor marking s72

Abstract: transistor s72 Marking Code S72 s72 transistor transistor marking code s72 SOT-23 s72 sot 23 Transistor s72 sot23
Contextual Info: DATA SHEET 2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR CURRENT 200 mAmp FEATURE Unit: inch mm SOT-23 N-channel enhancement mode field effect transistor,de- .007(.20) MIN. VOLTAGE 60 Volts .119(3.00) .110(2.80) .056(1.40) .047(1.20) signed for high speed pulse amplifier and drive applica-

Contextual Info: KS621K40A41 Powerex, Inc., 200 Hlllis Street, Youngwood, Pennsylvania 15697-1BOO 412 925-7272 Single Darlington Transistor Module 400 Amperes/1000 Volts O U T L I N E DRAWING Description: The Powerex Single Darlington Transistor Modules are high power devices designed for use in

d1694

Abstract: transistor D132 d-1694 BD131 D131 transistor d1687 TRANSISTOR D131 BD132 T4060 bm cb hen iv
Contextual Info: BD131 JV _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR N-P-N transistor in a SOT-32 plastic envelope fo r general purpose, medium power applications. P-N-P complement is BD132. Q U IC K R E F E R E N C E D A T A VCBO max. 70 V Collector-emitter voltage open base

transistor s72

Abstract: S72 transistor BUK436-200A BUK436-200B buk436
Contextual Info: N AUER P H I L I P S / D I S C R E T E bTE ]> • bbS3T31 DQ304b5 Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

s72 sot 23

Contextual Info: BS870 DMOS Transistors N-Channel FEATURES SOT-23 ♦ ♦ ♦ ♦ ♦ ♦ .122 (3.1) .118 (3.0) .016 (0.4) Top View .016 (0.4) .045 (1.15) .037 (0.95) .037(0.95) .037(0.95) .007 (0.175) .005 (0.125) 2 max. .004 (0.1) 1 .056 (1.43) .052 (1.33) 3 .102 (2.6)

1E2H

Abstract: 1d4h 1E6H MSB 017h 1E5H 1E4H 1D2H 1E1H Cl26M 1E3H
Contextual Info: Ordering number : ENN*6703 CMOS IC LC868920A Dot Matrix LCD Segment Driver with On-Chip 1280-Byte Display RAM for the LC868364A Expansion Preliminary Overview The LC868920A is a segment driver with built-in display RAM for the liquid crystal dot matrix-graphic display. It

transistor s72

Abstract: PT6530-LQ PT653 ptc6530-lq transistor s68 DIODE S45 transistor s49 PT6530 transistor D209 D-222
Contextual Info: Tel: 886-2-66296288 Fax: 886-2-29174598 URL: http://www.princeton.com.tw LCD Driver IC PT6530 DESCRIPTION The PT6530 are 1/3 duty and 1/4 duty LCD display drivers that can directly drive up to 300 segments and can control up to eight general-purpose output ports. These products also incorporate a key scan

BLV80-28

Abstract: TRANSISTOR D 471 transistor s72 S72 transistor 15 w RF POWER TRANSISTOR NPN
Contextual Info: bSE T> 7 11 002 b GübETiö 734 M P H I N B L V 8 0 /2 8 PHILIPS INTERNA TIO NA L V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in base stations in the v.h.f. mobile radio band. Features: • multi-base structure and diffused em itter ballasting resistors fo r an optim um temperature profile;