S65803C Search Results

Contextual Info: G M 71V 65803C G M 71V S65803C L 8,388,608 W O R D S x 8 BIT CMOS DYNAMIC RAM D escription Pin Configuration T h e GM 71V S 65803C/ C L i s t h e n ew generation dynamic RA M organized 8,388,608 w o r d s by 8 b i t s. T h e G M 71V (S)65803C/ C L utilizes advanced CM O S Silicon Gate Process

Contextual Info: G M 71V 65803C G M 71V S65803C L 8,388,608 W O R D S x 8 BIT CMOS DYNAMIC RAM D escription Pin Configuration T h e GM 71V S 65803C/ C L i s t h e n ew generation dynamic RA M organized 8,388,608 w o r d s by 8 b i t s. T h e G M 71V (S)65803C/ C L utilizes advanced CM O S Silicon Gate Process

ES8388

Contextual Info: G M 71V 65803C G M 71V S65803C L 8,388,608 W O R D S x 8 BIT CMOS DYNAMIC RAM D escription Pin Configuration T h e GM 71V S 65803C/ C L i s t h e n ew generation dynamic RA M organized 8,388,608 w o r d s by 8 b i t s. T h e G M 71V (S)65803C/ C L utilizes advanced CM O S Silicon Gate Process

Contextual Info: G M 71V 65803C G M 71V S65803CL LG Semicon Co.,Ltd. 8,388,608 W ORDS X 8 BIT CM OS DYNAMIC RAM Description Pin C o n fig u ratio n The GM71 V S 65803C/CL is the new generation dynam ic RAM organized 8,388,608 words by Sbits. The G M 7I V(S)65803C/CL utilizes advanced CMOS

Contextual Info: GM71V S 65803C(CL) 8Mx8, 3.3V, 4K Ref, EDO D e s c rip tio n P in C o n fig u ra tio n Features *8,388,608 W o rds x 8 Bit * Extended Data Out (EDO) M ode C apability * Fast Access Time & C ycle Time (U nit: ns) G M 7 1 V (S )65803 C / C L -5 G M 7 lV (S )6 5 8 0 3 C /C L - 6