S57LV291C Search Results

WSI eprom Programming algorithm

Contextual Info: S57LV291C PRELIMINARY HIGH SPEED 3.3 VOLT 2 K x 8 CMOS PROM/RPROM KEY FEATURES • 3.3 Volt ± 0.3 Volt Vcc • Available in 300 Mil "Skinny" DIP • Fast Access Time * Immune to Latch-up — tA c c = 70 ns — Up to 200 mA ~ lcs = 20 ns • Low Power Consumption

WSI Programming algorithm

Contextual Info: S57LV291C PRELIMINARY HIGH SPEED 3.3 VOLT 2K x 8 CMOS PROM/RPROM KEY FEATURES • 3.3 Volt ± 0.3 Volt Vcc • Available In 300 Mil "Skinny" DIP • Fast Access Time * Immune to Latch-up — t Ac c = 70 ns — Up to 200 mA — t c s = 20 ns • ESD Protection Exceeds 2000V

22A53

Contextual Info: S57LV291C PRELIMINARY HIGH SPEED 3.3 VOLT 2K x 8 CMOS PROM/RPROM KEY FEATURES • 3.3 Volt ± 0.3 Volt Vcc • Available in 300 Mil "Skinny" DIP • Fast Access Time • Immune to Latch-up — tACC = 70 ns — Up to 200 mA — t Cs = 20 ns • Low Power Consumption

WS57C291C

Abstract: WS57LV291C WS57LV291C-70 WS57LV291C-70T WS57LV291C-90 WS57LV291C-90T WSI Programming algorithm
Contextual Info: S57LV291C PRELIMINARY HIGH SPEED 3.3 VOLT 2 K x 8 CMOS PROM/RPROM KEY FEATURES • 3.3 Volt ± 0.3 Volt Vcc • Fast Access Time — • Available in 300 Mil "Skinny" DIP • Immune to Latch-up t ACC = 70 ns — lcs = 20 ns • Low Power Consumption — —

Contextual Info: S57LV291C PRELIMINARY HIGH SPEED 3.3 VOLT 2 K x 8 CMOS PROM/RPROM KEY FEATURES • 3.3 Volt ± 0.3 Volt Vcc • Available in 300 Mil "Skinny" DIP • Fast Access Time • Immune to Latch-up — t Ac c = 70 ns — Up to 200 mA — t c s = 20 ns . EgD Protection Exceeds 2000V

Contextual Info: S57LV291C PRELIMINARY HIGH SPEED 3.3 VOLT 2 K x 8 CMOS PROM/RPROM KEY FEATURES • 3.3 Volt ± 0.3 Volt Vcc • Available in 300 Mil "Skinny" DIP • Fast Access Time • Immune to Latch-up — I a c c = 70 ns — Up to 200 mA — 'cs = 20 ns • Low Power Consumption