S40D Search Results

AV2040

Abstract: S40D S40D30 S40D45 S40D50 S40D60
Contextual Info: ßk MOSPEC S40D30 Thru S40D60 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact.

S40D45C

Contextual Info: S40D30C – S40D100C 40A DUAL SCHOTTKY BARRIER RECTIFIER WON-TOP ELECTRONICS Pb Features  Schottky Barrier Chip       Guard Ring for Transient Protection Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Current Capability

Contextual Info: WON-TOP ELECTRONICS Material Composition Declaration Package Information Package TO-3P Package Weight mg 5600 Product Group Type No. S16D30C – S16D200C S20D30C – S20D200C S30D30C – S30D200C S40D30C – S40D200C S60D30C – S60D200C S80D30C – S80D200C

AV2040

Abstract: S40D100 S40D90 IR V 2238 2238 ir
Contextual Info: MOSPEC S40D90 Thru S40D100 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high

S40D45

Abstract: S40D60 S40D S40D30 S40D50
Contextual Info: EL MOSPEC S40D30 Thru S40D60 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact.

Contextual Info: MOSPEC S40D90C Thru S40D100C Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high

Contextual Info: MOSPEC S40D30 Thru S40D60 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high

S40D60

Abstract: S40D S40D30
Contextual Info: MOSPEC S40D30 Thru S40D60 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high

Contextual Info: S40D150C – S40D200C 40A HIGH VOLTAGE DUAL SCHOTTKY BARRIER RECTIFIER WON-TOP ELECTRONICS Pb Features  Schottky Barrier Chip       Guard Ring for Transient Protection Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Current Capability

S30D40C

Abstract: S30D40CE-S40D45CE S40D60C S30D40CE diode S30D40C S40D30CE-S40D45CE S40D60CE S40D30C 24535 L17 S30D40
Contextual Info: MOSPEC S40D30CE Thru S40D60CE Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high

IR V 2238

Abstract: S40D100CE S40D90CE
Contextual Info: MOSPEC S40D90CE Thru S40D100CE Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high

Contextual Info: MOSPEC S40D30 Thru S40D60 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high

S40M

Abstract: S40G s40k S40B S40Y
Contextual Info: MCC TM Micro Commercial Components S40B R THRU S40Y(R)
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • High Surge Capability • Types up to 1600 VRRM 40 Amp Rectifier 100 to 1600 Volts

Ss1015

Abstract: s40d40c
Contextual Info: PRODUCT SELECTION GUIDE Power Rectifiers 1 http://www.wontop.com WON-TOP ELECTRONICS 2 Contents Introduction 4 Selector Guides 5 Schottky Rectifiers 8 SMD 8 Axial Lead 14 Power-pack 16 Superfast Rectifiers 20 SMD 20 Axial Lead 22 Power-pack 23 Ultrafast Rectifiers

Contextual Info: MOSPEC Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high

Contextual Info: •Fixed Attenuators • F o r Multimode A tM te . Split Sleeve ±1.5dB 5dB CL820-0075-0-01 HSC-AT1S-B05A(01) 10dB C L820-0076-2-01 HSC-AT1S-B10A(01) Copper alloy C L820-0077-5-01 HSC-AT 1S-B15A(01) 15dB HRS No. P roduct N um ber CL820-0078-8-01 HSC-AT 1S-B20A(01)

Contextual Info: 19-1090; Rev 0; 6/96 A I^ X IV M 6 8 H C 11/B id ire c tio n a l-C o m p a tib le #iP R e s e t C irc u it This device perform s a single function: it asserts a reset signal w henever the V c c supply voltage falls below a p r e s e t t h r e s h o ld o r w h e n e v e r m a n u a l re s e t is

93PS40F

Contextual Info: TO SH IBA TMP93PS40 Low Voltage / Low Power CMOS 16-bit Micro-controller TMP93PS40F S40DF 1. OUTLINE AND DEVICE CHARACTERISTICS The T M P 93P S40 is OTP type M CU which includes 64K byte One-time PROM . U sin g the adapter-socket BM 11109 or BM 11129 , you can w rite and verify the d a ta for the

S40B(R)

Contextual Info: S40B R DACO SEMICONDUCTOR CO., LTD. THRU S40Y(R) STANDARD RECOVERY DIODE STUD TYPES Features 40A 40 Amp Rectifier 100-1600 Volts High Surge Capability Types Up to 1600V V RRM Maximum Ratings Operating Temperature: Storage Temperature: DO-5 -55 C to +175 M

Contextual Info: Ihr Spezialist für Mess- und Prüfgeräte A1020 HFBr ei t bandLei s t ungs v er s t är ker 10kHz–250MHz/75W 100kHz–300MHz/75W 100kHz–250MHz/25W 100kHz–400MHz/75W DATENBLATT Di eHFBr ei t bandLei s t ungs v er s t är kerderA1020Fami l i es i ndr

S60K

Contextual Info: '¿f 49T Y JV 220/240V SO/6OH1 2.S/Sr/Bln 31 FREE T3 “ m g & S P E C IF IC A T IO N 1. 2 2 0 /2 4 0 V ~ 5 0 /6 $ H i? a te d voltage: 2. S ' * * * : s3W 3. £ * fe S fc s25m A 4. fttfi& JS : »4Kgf. cm 4/4.8R.P.M 5. # »: m 3. Inp ut c u rre n t: 4. Torque:

BL233B

Abstract: BL233 SAA 1251 how to reset 24C04 dump 24c16 fe 1.1s usb 2.0 C5V6 ph S4083 RS422 TO RS232 CONVERTOR CIRCUIT S41 sensor Magnetic
Contextual Info: BL233B RS232 – I2C/SPI/1WIRE ADAPTOR & CONTROLLER Features • • • • • • • • • • • • • • • • • • • Versatile Serial Bus Interface Four separate I2C busses SPI Dallas 1 Wire SCL Stretch to work with software & microprocessor slaves

Contextual Info: MOSPEC Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high

Contextual Info: S40B thru S40JR Silicon Standard Recovery Diode VRRM = 100 V - 600 V IF =40 A Features • High Surge Capability • Types from 100 V to 600 V VRRM DO-5 Package • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode.